Reactive chemical doping of the Bi2Se3 topological insulator

Using angular resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator Bi(2)Se(3) as a function of water vapor exposure. We find that a surface reaction with water induces a band bending, which shifts the Dirac point deep into the occupied states and creates quantum well states with a strong Rashba-type splitting. The surface is thus not chemically inert, but the topological state remains protected. The band bending is traced back to Se abstraction, leaving positively charged vacancies at the surface. Because of the presence of water vapor, a similar effect takes place when Bi(2)Se(3) crystals are left in vacuum or cleaved in air, which likely explains the aging effect observed in the Bi(2)Se(3) band structure.     

Electron spectroscopic studies of the adsorption of methanol on zinc oxide powder

X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and Auger electron spectroscopy (AES) have been used to study the adsorption of methanol on ZnO powder. The He(II) spectrum of electron-beam-eleaned ZnO was similar to that reported by Rubloff .¹ for the ZnO (11̄ 0 0) surface. The spectrum of methanol condensed at ?150°C matched that of gas-phase methanol. At low methanol coverages, difference spectra showed no increase in the methanol O(2p) lone pair binding energy reported to be indicative of chemisorption. A residual carbon and oxygen surface component on the ZnO powder may have prevented chemisorption. XPS measurements were found to be more useful in observing this layer than was AES. A decrease in the ZnO valence band intensity near the valence band maximum indicated that a strong interaction with the substrate had occurred.In this system the valence bands of the adsorbate and substrate overlap, and the true position of the methanol O(2p) lone pair orbital is obscured by the effects of the substrate band modification. Also, for insulators or semiconductors, a change in the measured position of the valence band maximum relative to the Fermi level may occur upon adsorption. Since the Zn(3d) core level should not be affected, it was used as an energy reference for the present work. The problems of energy referencing in UPS studies of adsorption on semiconductors are discussed.     

Anomalous oxidation properties of the ZnSe (100) surface

We have observed a unique, pressure-dependent adsorption isotherm of oxygen on the ZnSe (100) surface, which consists of an unmeasurable uptake followed by an irreversible, step-like uptake for pressures exceeding a critical value of ～ 0.08 torr at room temperature. A partial depletion of Se accompanies this adsorption process. For incomplete oxidation, oxygen induced (2 × 1) and (3 × 1) surface reconstructions may be generated, the first such structures to be observed for semiconductors. The electron-energy-loss spectra for these surfaces and for the clean ZnSe (100)c(2 × 2) surface are presented. The clean surface exhibits a dangling-bond-derived empty surface state ～ 1 eV above the conductor band edge, and filled surface states near 3.2, 6.5, and 15 eV below the valence band edge.     

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study

Bi(2)Te(2)Se, a ternary tetradymite compound, has recently been identified to be a three-dimensional topological insulator. In this paper, we theoretically study the electronic structures of bulk and thin films of Bi(2)Te(2)Se employing spin-orbit coupling (SOC) self-consistently with density-functional theory. It is found that SOC plays an important role in determining the electronic properties of Bi(2)Te(2)Se. A finite bandgap opens up in the surface states of Bi(2)Te(2)Se thin films due to the hybridization of the top and bottom surface states of films. The intrinsic Bi(2)Te(2)Se thin films of three or more quintuple layers exhibit a robust topological nature of electronic structure with the Fermi energy intersecting the Dirac cone of the surface states only once between time-reversal-invariant momenta. These characteristics of Bi(2)Te(2)Se are similar to the topological behavior of Bi(2)Te(3), promising a variety of potential applications in nanoelectronics and spintronics.     

Surface electronic structure of the organic superconductor κ-(ET)2Cu(NCS)2 studied via photoemission microscopy

The surface electronic structure of cleaved single crystals of the organic superconductor κ-(ET)₂Cu(NCS)₂ has been studied using photoemission microscopy. Two types of cleaved surfaces were observed, displaying different valence band photoemission spectra and different spectral behavior near the Fermi level, E_F. In particular, spectra from one surface type display relatively broad spectral features in the valence band and finite spectral intensity at E_F, while spectra from the other surface type show well-defined valence band emission features and zero photoemission intensity at E_F. We propose that the spectral differences are due to a very short electron mean free path in this material, and our results are used to explain the differences between previously published photoemission spectra from this superconductor. We also report the results of an investigation of the electronic structure of defects in this material.     

Hydrogen chemisorption on silicon (100) 2 × 1

Changes in the valence band density of states (DOS) of a (100) silicon surface that accompany he chemisorption of atomic hydrogen onto that surface are deduced from a study of the changes in the L_2,3VV Auger lineshape. Complementary changes in the conduction band DOS are inferred from changes in L_2,3VV-core-level characteristic loss spectra (CLS). The chemisorbed hydrogen layer is identified as the dihydride phase from low energy electron diffraction measurements. Upon hydrogen adsorption the DOS at the top of the valence band decreases and new energy levels associated with the Si-H bonds appear lower in the band. Assuming that the Auger signal from the hydrogen covered sample consists of a superposition of a signal from silicon atoms bonded to hydrogen in the dihydride layer and an elemental-Si signal from the substrate, a N(E) difference spectrum with features due only to the dihydride is obtained by subtracting the background corrected, loss deconvoluted L_2,3VV signal for a clean (100)Si surface rom the corresponding signal for the hydrogen covered surface. Comparisons of the energy position of the major peak in this difference spectrum with that of the main peak in a gas phase silane Si-L_2,3VV spectrum, and of the corresponding Auger energy calculated empirically, indicate a hole—hole interaction energy of ~8 eV for the two-hole final state in the gaseous system and zero for the dihydride surface system. Hydrogen induced changes in the conduction band DOS are less apparent than those of the valence band DOS with only the possibility of a decrease in the DOS at the bottom of the conduction band being inferred from the CLS measurements. Electron stimulated desorption of hydrogen from the dihydride layer is adduced from changes in the Auger lineshape under electron beam irradiation of the surface. Hydrogen induced changes in the near-elastic electron energy loss spectra (ELS) are also reported and compared with previously published ELS results.     

Photoemission yield spectroscopy of electronic surface states on germanium (111) surfaces

The electronic surface states of cleaved and annealed Ge(111) surfaces have been investigated by photoemission yield spectroscopy and contact potential measurements on a set of differently doped samples. On the 2 × 1 cleaved surface, a surface state band centered about 0.7 eV below the valence band maximum is found. The variations of the work function with the doping level show that an empty surface state band exists above the Fermi level. After annealing at temperatures of the order of 350°C, this surface exhibits a 2 × 8 superstructure. A new surface state band is then found closer to the valence band maximum. This variation of the surface state distribution is correlated to a change in the surface potential. The variation of the electronic characteristics upon oxygen adsorption are also reported and an evaluation of the sticking coefficient is made for both structures.     

Ultrafast optical excitation of a persistent surface-state population in the topological insulator Bi2Se3

Using femtosecond time- and angle-resolved photoemission spectroscopy, we investigated the nonequilibrium dynamics of the topological insulator Bi2Se3. We studied p-type Bi2Se3, in which the metallic Dirac surface state and bulk conduction bands are unoccupied. Optical excitation leads to a metastable population at the bulk conduction band edge, which feeds a nonequilibrium population of the surface state persisting for >10 ps. This unusually long-lived population of a metallic Dirac surface state with spin texture may present a channel in which to drive transient spin-polarized currents.     

新型层状Bi2Se3的第一性原理研究

近年来,在石墨烯研究热潮的推动下,众多种类丰富、性能各异的二维化合物材料相继被发现,其中一些二维材料具有多种同素异构体,进而呈现出更丰富的性质.层状Bi2Se3由于其独特的物理性质,受到人们广泛的关注,而它的同素异构体尚未有人研究.本文采用基于密度泛函理论的结构搜索方法,预测了一个稳定的b-Bi2Se3新相,它具有良好的动力学和热力学稳定性,并在低Bi2Se3源化学势条件下容易形成.单层b-Bi2Se3是一个直接带隙为2.44 eV的二维半导体,其电子载流子有效质量低至0.52m0,在可见光范围内具有高达10^5 cm^–1的光吸收系数,并且能带边缘位置适中,可用于光催化水分解制氢气.此外,由于b-Bi2Se3在垂直层面方向的镜面对称性破缺,能够产生面外极化强度,具有0.58 pm/V的面外压电系数.鉴于其新颖的电子特性,二维b-Bi2Se3在未来的电子器件中可能发挥重要的作用.     

Origin of the peak-dip-hump line shape in the superconducting-state (pi,0) photoemission spectra of Bi2Sr2CaCu2O8

From detailed high-resolution measurements of the photon energy dependence of the (pi,0) superconducting-state photoemission spectrum of the bilayer Bi high-temperature superconductors, we show that the famous peak-dip-hump line shape is dominated by a superposition of spectral features originating from different electronic states which reside at different binding energies, but are each describable by essentially identical single-particle spectral functions. The previously identified bilayer-split CuO2 bands are the culprit: with the "superconducting" peak being due to the antibonding band, while the hump is mainly formed by its bonding bilayer-split counterpart.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

硼掺杂拓扑绝缘体Bi2Se3单晶的电输运性质研究

本文首次报道了用自助溶剂法(self-flux)制备优良的硼(B)掺杂硒化铋(Bi2BxSe3-x)样品的探索。实验结果显示掺杂样品中大部分B是以替代Se位方式存在,少量B以插入Bi2Se3晶格或范德瓦尔斯间隙的形式存在。当B的含量逐渐增加时,Bi2Se3的晶格常数c先减小后增加,且样品具有清晰的层状结构。掺杂量x=0.05的样品局部区域出现纳米带结构,同时该样品在低温下出现了明显的金属-绝缘转变现象。Bi2Se3样品电阻率随掺杂含量的增加而增加,表明B掺杂提高了样品表面态对整体电导的贡献,同时纳米带结构也有助于增加表面态的贡献。     

A photoelectron spectroscopic study of the adsorption of CO and CO2 on platinum

The adsorption of CO and CO₂ on platinum has been studied by UV photoelectron spectroscopy using both He I and He II radiation. The modulation of the intensity of the spectral features observed for adsorbed CO as the photon energy is changed is used to assign the observed levels. The results are in reasonable agreement with recent theoretical and experimental work. The levels are observed to shift by different amounts compared to gas phase CO because of chemical binding effects. The adsorption of CO₂ produces spectral features that are shifted by the same amount compared to gas phase CO₂. This, together with the absence of any localized attenuation of the platinum valence band and the low heat of adsorption, indicates that CO₂ is physisorbed on platinum.     

Nickel Adsorption on Bi2Se3 Surface

Physics of the Solid State - The effect of the physical adsorption of nickel on a surface of a topological Bi2Se3 insulator on the electronic structure has been studied. The influence of the...     

A comparative analysis of electron spectroscopy and first-principles studies on Cu(Pd) adsorption on MgO

Ultrathin MgO films were grown on a W(1 1 0) substrate while metastable impact electron (MIES) and photoelectron (UPS) spectra were measured in situ; apart from the valence band emission, no additional spectral features were detected. The oxide surface was exposed to metal atoms (Cu, Pd) at RT. A comparison with the DOS extracted from first-principles DFT calculations shows that the metal-induced intensity developing above the top of the O 2p valence band in the UP spectra under Cu(Pd) exposure is caused by Cu 3d (Pd 4d) emission. The emission seen in the MIES spectra is attributed to the ionization of Cu 3d and 4s states of adsorbed neutral Cu atoms in an Auger process, Auger neutralization, involving two electrons from the surface, at least one of them from the metal adsorbate. The shape of the MIES spectra suggests metallic island growth even at the lowest studied exposures, which is supported by the first-principles calculations.     

Symmetry Breaking and Reversible Hydrogenation of Two-Dimensional Semiconductor Sn_2Bi

The hydrogenation of two-dimensional(2D) systems can efficiently modify the physical and chemical properties of materials.Here we report a systematic study on the hydrogenation of 2D semiconductor Sn_2Bi on Si(111)by scanning tunneling microscopy experiments and first principle calculations.The unique butterfly-like and trench-like features were observed for single H adsorption sites and hydrogen-saturated surfaces respectively,from which the bridge-site adsorption geometry can be unambiguously determined.The structural model was further confirmed by the theoretical calculations,which is in good agreement with the experimental observation.In addition,the hydrogenation is found to vanish the flat band of Sn_2Bi and increase the band gap obviously.     

Metal (Cu; Pd) adsorption on MgO: investigations with MIES and UPS

MgO films (2-nm thick) were grown on W(110) while metastable impact electron (MIES) and photoelectron (UPS(HeI)) spectra were collected in situ; apart from the valence-band emission no additional spectral features could be detected. The oxide surface was exposed to metal atoms (Cu; Pd) (substrate at 300 K). For Cu, but not for Pd/MgO, a characteristic initial decrease of the surface work function by about 0.4 eV is observed for small exposures. Metal-induced intensity develops above the top of the O2p valence band in UPS caused by 3dCu (4dPd) emission. The emission seen for Cu/MgO in the MIES spectra above the 2pO valence band is attributed to the ionization of Cu4s states of neutrally adsorbed Cu species; the shape of the MIES spectra suggests island growth even at the lowest studied exposures. For Cu/MgO the critical coverage for the transition from 2D to 3D island growth, as determined with MIES, is estimated as 0.15 monolayers. PACS 79.20; 79.60.Dp; 73.22.-f; 82.80.Pv     

Adsorption and decomposition of ammonia on W(100); XPS and UPS studies

The adsorption and decomposition of ammonia on a clean and c(2 × 2)-N ordered W(100) surface has been studied by photoemission spectroscopy (XPS and UPS). At 120 K molecularly adsorbed ammonia was identified by N(1s) core level emission at 400.9 eV and the valence emissions at 7.6 and 11.7 eV. By heating the sample stepwise the N(1s) core level shifted to lower binding energy. In the valence region, the corresponding spectral changes were obtained, where the dependence of the peak intensity on photon energy was observed. These observations were interpreted to demonstrate that adsorbed ammonia dissociates its hydrogen successively to form NH_x(a) and finally to atomic nitrogen. On the other hand, ammonia was molecularly adsorbed on a c(2 × 2)-N ordered surface even at temperatures as high as 300 K, although the spectra at 400 K or above were very similar to those under a steady state flow condition, where the tungsten surface was mostly covered by atomic nitrogen. At higher ammonia pressure up to about 100 Pa thicker nitride layers were formed at 700 K, which were characterized by the N(1s) core level at 397.3 eV and a broad emission around 6 eV in the valence level.     

SrTiO3中形成级联能级的理论分析

以Bi和Cu掺杂为例,通过基于密度泛函理论的电子结构的计算,分析了SrTiO₃体系中形成级联能级的可能性.结果表明,Bi掺杂和Cu掺杂都可以在SrTiO₃的禁带中引入杂质能带,Bi和Cu的共同掺杂可引入两条杂质能带.通过在两条杂质能带之间级联激发,价带顶的电子可以受激跃迁到导带底.采用无辐射跃迁的简单模型,分析指出电子通过级联激发从价带顶受激跃迁到导带底的概率远远高于直接从价带顶跃迁到导带底的概率.这种级联激发可以有效提高导带中的载流子浓度. 关键词： 级联能级 密度泛函 掺杂     

Benefits of oxygen in CuInSe2 and CuGaSe2 containing Se-rich grain boundaries

Using density functional theory calculation, we show that oxygen (O) exhibits an interesting effect in CuInSe₂ and CuGaSe₂. The Se atoms with dangling bonds in a Se-rich Σ3 (114) grain boundary (GB) create deep gap states due to strong interaction between Se atoms. However, when such a Se atom is substituted by an O atom, the deep gap states can be shifted into valence band, making the site no longer a harmful non-radiative recombination center. We find that O atoms prefer energetically to substitute these Se atoms and induce significant lattice relaxation due to their smaller atomic size and stronger electronegativity, which effectively reduces the anion–anion interaction. Consequently, the deep gap states are shifted to lower energy regions close or even below the top of the valence band.