A potential Co36Fe36Si4B20Nb4 nanocrystalline alloy for high temperature soft magnetic applications

The paper addresses the structural, crystallization, soft magnetic and Curie temperature behaviour of Co₃₆Fe₃₆Si₄B₂₀Nb₄ alloy. The material, prepared in the form of ribbons by melt-spinning technique, was amorphous in the as-cast state. Differential scanning calorimetry (DSC) showed two stages of crystallization whereas thermal variation of electrical resistivity (TER) carried out to a higher range of temperature indicated three stages of crystallization. The first crystallization stage, which occurred at 845?K and 825?K in DSC and TER, respectively, was due to the formation of nanophase (CoFe)₂Si as evidenced by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The formation of these nanoparticles reduced the magnetocrystalline anisotropy, thereby revealing good soft magnetic properties in the samples annealed between 825?K and 875?K with coercivity less than 49.9?A?m^?1 (627?mOe) and susceptibility?～?0.72?×?10³. In this optimum nanocrystalline state, the material also exhibited a high Curie temperature above 1100?K, opening the scope of the present nanocrystalline alloy for high temperature applications.     

Origin of large spin Hall magnetoresistance in Fe/CuOx bilayers

We have compared the spin Hall magnetoresistance (SMR) in Fe/Pt and Fe/CuO_x (with natural oxidation) bilayers with varying the thickness of Fe layer. A larger SMR in Fe/CuO_x bilayers has been found when the thickness of Fe layer is 3 nm. Moreover, the SMR of the two bilayers decrease with increasing the thickness of Fe from 3 nm to 10 nm, but that of Fe/CuO_x drops more sharply due to shunting current effect. Through harmonic measurements, the emergent spin current is proved to be generated in the Fe/CuO_x bilayers. The mixed phase of CuO_x has been confirmed including CuO, Cu₂O and Cu, which performs strong spin-orbit coupling and produce large spin current. On the other hand, the interface-generated spin current should be ruled out. All the results have been compared with those in Fe/Al₂O₃ bilayers with negligible spin current.     

Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect

A planar Hall effect(PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si(001) substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.     

压力下 Nd60Al10Fe20Co10块体金属玻璃的弹性行为

室温下在等静压最高达～0.5GPa的条件下,利用超声回波技术测量了超声波横波和纵波在Nd60Al10Fe20Co10块体金属玻璃中的传播时间来确定横波和纵波速度.测量时所采用的超声波频率为10MHz.利用所测量的数据,建立了超声波波速、样品的密度、弹性模量以及Debye温度等与所施加的压力之间的相互关系.并且推导出Murnaghan状态方程.另外,基于非晶态与晶态物理性能的相似性,对此块体非晶的压缩曲线、弹性常数和Debye温度等进行了理论计算,结果表明Nd60Al10Fe20Co10块体金属玻璃的弹性性能与其组成的元素有着密切的关系.     

Digital applications of the planar Hall effect in ferromagnetic thin films

The planar Hall effect in ferromagnetic thin films has been optimized with respect to composition dependence and geometric structure. Various devices can be realized with this effect, using the output voltage or the output current in a short circuited loop.This work was sponsored by Délégation Générate á la Recherche Scientifique et Technique.The authors thank R. Morille for the preparation of thin films.     

Kerr effect in R2Fe14B and R2Co14B compounds

The polar Kerr effect in several compounds of the R₂Fe₁₄B and R₂Co₁₄B series (R=rare earth metal) at room temperature was measured in the energy range 0.5–5 eV. It was found that the 3d sublattice magnetization is mainly responsible for the Kerr effect. The potential use of R₂Fe₁₄B compounds for erasable magneto-optical recording is briefly discussed.     

Point Defects and Their Properties in the Fe20Ni20Cr20Co20Cu20 High-Entropy Alloy

JETP Letters - The characteristics of interstitial atoms and vacancies in the Fe20Ni20Cr20Co20Cu20 high-entropy alloy have been determined by the molecular dynamics and statics methods. The effect...     

NMR-on study of60Co in Fe−Si single crystal

NMR-ON measurements have been performed for⁶⁰CoFe−Si. The samples of Fe−Si (6 at. %) single crystal dish with the (110) surface were used. Rosonance measurements have been carried out with the magnetization direction along the <100> and the <111> axes. Five prominent resonances were found at 166, 162, 151, 147 and 135 Mllz. The resonance at 166 Mllz has been known to be due to⁶⁰Co without neighbourt Si atoms. The resonances at 151 and 135 Mllz are due to⁶⁰Co nuclei with one and two Si atom(s) in the 1st neighbour site, respectively. The resonances at 162 and 147 Mllz would be due to the contribution of the 3rd <111> and the <100> magnetization axes, the differences of the resonance width have been qualitatively explained using the dipolar field.     

Nuclear spin-lattice relaxation in ferromagnetic amorphous alloys Fe81Co3B16 andFe70Co10B20 measured by NMR and Nuclear orientation

The nuclear spin-lattice relaxation of⁵⁹Co in amorphous Fe-Co-B alloys was studied by NMR andthe results were compared with nuclear orientation measurements. The NMR relaxation rates were evaluated taking into account the electric quadrupole interaction. Then the results of both methods are in good agreement. It was confirmed that the spin-lattice relaxation is independent of the external magnetic field in the magnetically saturated samples andit was found that it does not depend on Co concentration.     

Specific features of the Hall effect in Cr/Co bilayer films

The Hall effect and magnetoresistance in Cr(50 Å)/Co(200 Å) bilayer films prepared by ion sputtering on a silicon substrate are investigated at room temperature. The planar Hall effect revealed in the bilayer films differs from the planar Hall effect observed usually in that it is symmetric with respect to the sign of the change in the rotation angle of the magnetic moment in the film plane. Under conditions where the symmetric planar Hall effect is realized, the change in the Hall resistance is more than 10% and exceeds the anisotropic magnetoresistance by two orders of magnitude. The hysteresis loops are measured at different orientations of magnetic fields. The planar Hall effect is studied in a weak longitudinal magnetic field. The results obtained demonstrate that the symmetric planar Hall effect is associated with the multidomain structure of the cobalt film in Cr/Co bilayer composites.     

The Hall effect in PdSi based amorphous alloys containing Co

The Hall effect in amorphous Pd_80–x Si₂₀Co _x , wherex=8, 9, 10, 12, 15, 20 (at.% are implied throughout) alloys was investigated. The measurements were carried out at r.t. in fields up to 17·5 kGauss. The variation of the Hall fieldE _H vs magnetic fieldB shows features typical for bulk ferromagnetics. The Hall constantR ₁ describing the extraordinary effect ranges from 0·29 to 27·64 (×10^–/4 in cm³/A. sec both) reaching its maximum value for the alloy withx= =12. The interpretation of theE _H vsB curves obtained is based on a model with magnetic clusters carrying giant magnetic moments. These clusters are considered to have close relation to the clusters observed by electron microscopy. Magnetic moment of an average magnetic cluster is estimated to be of the order of 1000 _B for the alloys with more than 9 at.% Co.     

Thickness-dependent magnetic properties of Ni81Fe19, Co90Fe10 and Ni65Fe15Co20 thin films

We present results of magnetization and magnetic anisotropy measurements in thin magnetic films of the alloys Ni₈₁Fe₁₉, Co₉₀Fe₁₀ and Ni₆₅Fe₁₅Co₂₀ that are commonly used in magnetoelectronic devices. The films were sandwiched between layers of Ta. At room temperature the critical thickness for all the films to become ferromagnetic is in the range 11–13 Å. In Co₉₀Fe₁₀ the coercivity and the anisotropy field both depend strongly on layer thickness.     

Giant Hall effect in (GaAs)Fe granular films

A series of (GaAs)_1 − xFe_x (x: volume fraction) films with Fe granules embedded in GaAs matrix were prepared by magnetron sputtering. Hall Effect of the films was characterized. The largest saturated Hall resistivity of was observed in (GaAs)₃₀Fe₇₀ film at room temperature, which is over 2 orders larger than that of pure Fe, about 1 order larger than that of (NiFe)–(Al₂O₃) and (NiCo)–(SiO₂) granular films prepared under the same preparation conditions, and 150% larger than that of Ge₃₀Fe₇₀.     

纳米晶永磁Pr8Fe87B5反磁化机理研究

用熔体快淬法制备了Pr2Fe14B/α-Fe纳米复合永磁样品.测量了样品的起始磁化、反磁化过程、矫顽力和剩磁与外场的关系，以及样品的磁粘滞性.经分析认为材料的矫顽力主要由非均匀的钉扎机理决定，但由于交换硬化的软磁相的可逆转动使得这种反磁化机理不同于单相永磁材料的钉扎行为.磁粘滞性表明热激活主要源于硬磁相的不可逆磁化行为. 关键词： 纳米复合永磁 矫顽力 剩磁 磁粘滞     

Elastic Dipoles in Crystal and Glassy Aluminum and High-Entropy Fe20Ni20Cr20Co20Cu20 Alloy

JETP Letters - Molecular dynamics simulation has shown that anisotropic local atomic configurations, which are in essence elastic dipoles, exist in noncrystalline structures of Al and FeNiCrCoCu....