CdS quantum dot-sensitized ZnO nanorod-based photoelectrochemical solar cells

ZnO nanorods have been grown using ZnO seed layer onto ITO-coated glass substrates. CdS quantum dots have been deposited onto ZnO nanorods using simple precursors by chemical method and the assembly of CdS quantum dots with ZnO nanorod has been used as photo-electrode in quantum dot-sensitized solar cells. X-ray diffraction results show that ZnO seed layer, ZnO nanorods, and CdS quantum dot-sensitized ZnO nanorods exhibit hexagonal structure. The particle size of CdS nanoparticle is 5 nm. The surface morphology studied using scanning electron microscope shows that the top surface of the vertically aligned ZnO nanorods is fully covered by CdS quantum dots. The ZnO nanorods have diameter ranging from 100 to 200 nm. The absorption spectra reveal that the absorption edge of CdS quantum dot-sensitized ZnO nanorods shift toward longer wavelength side when compared to the absorption edge of ZnO. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 0.69% and is the best efficiency reported so far for this type of solar cells.     

CuGaSe2 solar cells with 9.7% power conversion efficiency

Heterojunctions, such as ZnO/CdS/CuGaSe₂, were fabricated for photovoltaic applications. Optimization of device structures based on monocrystalline CuGaSe₂ led to the highest-to-date power conversion efficiencies for CuGaSe₂ solar cells. At room temperature under 100 mW/cm² AM1.5 illumination a maximum cell efficiency of 9.7% was achieved, given by an open-circuit voltage of 946 mV, a short circuit current density of 15.5 mA/cm², and a fill factor of 66.5%. Preparation and performance of the optimum device are described. Current voltage characteristics dependent on illumination intensity and temperature, spectral response and electron-beam-induced current measurements were performed to determine the device parameters as well as to analyse the current transport and loss mechanisms. Tunneling, assisted by defect levels in the CdS layer, seems to play a major role. High injection effects are observed at forward bias ofV > 0.5 V or an illumination level ofP > 10 mW/cm². Under such conditions, as well as at low temperatures, the non-zero series resistance comes into play. Effects of the shunt resistance, however, are negligible in all cases.     

UV-illuminated chemical bath deposition of CdS buffer layer for CIGSSe solar cells

In this paper, we compare the performance of Cu(In,Ga)(S,Se)₂ (CIGSSe) thin film solar cells with a CdS buffer layer grown by chemical bath deposition (CBD) with UV irradiation of 365 nm or 254 nm at an output power of 8 W. The effects of UV light irradiation on the CBD-CdS thin film deposition mechanism were investigated through chemical and electro-optical studies. UV light irradiation during the solution process promotes the hydrolysis of thiourea, thereby inhibiting the formation of the intermediate products being developed on the reaction pathways and decreasing the solution pH. Therefore, the efficiency of the CdS/CIGSSe solar cells was improved because of the increased elemental ratio of S/(S + O) in the CdS thin film. This very simple and effective approach can be used to control the S/O ratio of the CdS thin film fabricated by the CBD process without artificially controlling the process temperature, solution pH or concentration.     

Performance of CdS/CdSe/ZnS quantum dot-sensitized TiO2 mesopores for solar cells

We prepare CdS/CdSe/ZnS thin films by successive ionic layer adsorption and reaction method. Results show a wider photoresponse range of TiO2 mesopores from the ultraviolet region to the visible light region. Sequentially assembled CdS/CdSe/ZnS quantum and photocurrent efficiency. A high efficiency of dots exhibit significantly improved light-harvesting ability 1.059354% is obtained.     

碲化镉薄膜太阳能电池电学特性参数分析

用inline方式全部近空间升华方法制备n-CdS/p-CdTe取得了～11%的转换效率(AM1.5). 把其中n-CdS层采用磁控溅射方法取得了～10%的转换效率(AM1.5). 基于其电流密度-电压(J-V)曲线和外量子效率曲线, 分析了其拟合关键参数对于电池性能的影响程度, 并从理论分析上把目前器件性能参数与当今前沿性能参数以及其理论值进行比较, 指出了如何提高电池转换效率(η)的方法: 提高开路电压(V_oc)、短路电流(J_sc)和填充因子(FF). 关键词： 碲化镉电池 电流密度-电压曲线 外量子效率曲线 电学特性     

ZnO/Ag/ZnO multilayer transparent electrode for highly-efficient ITO-Free polymer solar cells

Ultrathin metal film (UTMF) with a ZnO/Ag/ZnO hybrid structure was used as transparent electrode in a high-efficiency bulk heterojunction system for the fabrication of ITO-free polymer solar cells. The performance of the devices was carefully tuned through optical simulation using transfer matrix method by varying the thickness of ZnO seed layer and thin absorber layer. By employing appropriate device architecture, polymer solar cells fabricated using this UTMF-based electrode show efficiency as high as 9.49%, which is slightly higher compared to that of ITO-based device. From good agreement between the external quantum efficiency and optical modeling, it was found that the optimized microcavity configuration formed in UTMF-based device can greatly enhance the absorbance of the BHJ layer at longer wavelength as well as the favored exciton distribution for better charge transport and collection.     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

Cu_2O/ZnO氧化物异质结太阳电池的研究进展

介绍了近年来低成本Cu_2O/ZnO氧化物异质结太阳电池方面的研究进展.应用于光伏器件的吸收层材料Cu_2O是直接带隙半导体材料,天然呈现p型;其原材料丰富,且对环境友好.Cu_2O/ZnO异质结太阳电池结构主要有平面结构和纳米线/纳米棒结构.纳米结构的Cu_2O太阳电池提高了器件的电荷收集作用;通过热氧化Cu片技术获得的具有大晶粒尺寸平面结构Cu_2O吸收层在Cu_2O/ZnO太阳电池应用中展现出了高质量特性.界面缓冲层(如i-ZnO,a-ZTO,Ga_2O_3等)和背表面电场(如p~+-Cu_2O层等)可有效地提高界面处能级匹配和增强载流子输运.10 nm厚度的Ga_2O_3提供了近理想的导带失配,减少了界面复合;Ga_2O_3非常适合作为界面层,其能够有效地提高Cu_2O基太阳电池的开路电压V_(oc)(可达到1.2 V)和光电转换效率.p~+-Cu_2O(如Cu_2O:N和Cu_2O:Na)能够减少器件中背接触电阻和形成电子反射的背表面电场(抑制电子在界面处复合).利用p型Na掺杂Cu_2O(Cu_2O:Na)作为吸收层和Zn_(1-x)Ge_x-O作为n型缓冲层,Cu_2O异质结太阳电池(器件结构:MgF_2/ZnO:Al/Zn_(0.38)Ge_(0.62)-O/Cu_2O:Na)光电转换效率达8.1%.氧化物异质结太阳电池在光伏领域展现出极大的发展潜力.     

Spin-coating deposition of PbS and CdS thin films for solar cell application

In this work, we describe a simple spin-coating deposition technique for lead sulphide (PbS) and cadmium sulphide (CdS) films from a methanolic metal–thiourea complex. The characterization of the films by X-ray diffraction and X-ray photoelectron spectroscopy techniques revealed that pure cubic phase PbS and CdS layers were formed via this method. As shown by atomic force microscopy and scanning electron microscopy results, both films were homogeneous and presented a smooth surface. Optical properties showed that the energy band gap of PbS and CdS films were around 1.65 and 2.5 eV, respectively. The PbS film is p-type in nature with an electrical conductivity of around 0.8 S/cm. The hole concentration and mobility were 2.35 × 10¹⁸ cm^?3 and 2.16 × 10^?3 cm²/V/s, respectively, as determined from Hall measurement. Both films were used to develop a thin film solar cell device of graphite/PbS/CdS/ITO/glass. Device characterization showed the power conversion efficiency of around 0.24 %. The corresponding open circuit voltage, short circuit current and fill factor were 0.570 V, 1.32 mA/cm² and 0.32, respectively.     

Evaluation of electrical and optical characteristics of ZnO/CdS/CIS thin film solar cell

In this study, device modeling and simulation are conducted to explain the effects of each layer thickness and temperature on the performance of ZnO/CdS/CIS thin film solar cells. Also, the thicknesses of the CIS and CdS absorber layers are considered in this work theoretically and experimentally. The calculations of solar cell performances are based on the solutions of the well-known three coupling equations: the continuity equation for holes and electrons and the Poisson equation. Our simulated results show that the efficiency increases by reducing the CdS thickness. Increasing the CIS thickness can increase the efficiency but it needs more materials. The efficiency is more than 19% for a CIS layer with a thickness of 2 μm. CIS nanoparticles are prepared via the polyol route and purified through centrifugation and precipitation processes.Then nanoparticles are dispersed to obtain stable inks that could be directly used for thin-film deposition via spin coating.We also obtain x-ray diffraction(XRD) peak intensities and absorption spectra for CIS experimentally. Finally, absorption spectra for the CdS window layer in several deposition times are investigated experimentally.     

Structural and optical properties of monodispersed ZnS/CdS/ZnO and ZnO/ZnS/CdS nanoparticles

Excellent luminescence properties of ZnS/CdS/ZnO and ZnO/ZnS/CdS nanocrystallites synthesized through a simple chemical method at room temperature are reported. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), UV–visible absorption and photoluminescence techniques were used to characterize the undoped ZnS, CdS and ZnO and the novel ZnS/CdS/ZnO and ZnO/ZnS/CdS nanoparticles. The optical properties of ZnS/CdS/ZnO and ZnO/ZnS/CdS nanoparticles reflect a combinational effect of the photoluminescent properties of ZnS, CdS and ZnO.     

Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10⁻⁴ Ω cm, with a carrier mobility of 9.00 cm² V⁻¹ s⁻¹ and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Theoretical analysis of spin-Hamiltonian parameters for the rhombic Cu2+ centres in CuGaSe2 crystals

The spin-Hamiltonian parameters (g factors g_i and hyperfine structure constants A_i, where i = x, y, z) of the rhombic Cu²⁺ centres in the CuGaSe₂ crystal are determined from the high-order perturbation formulae based on the cluster approach (sometimes also called two-spin-orbit parameter model). In the studies, some parameters in the analysis of g factors for the same centre within the tetragonal symmetry approximation in the previous paper are used, and the parameter due to the perturbation of rhombic crystal field caused by a charge compensator at, e.g., [110] direction are considered. As the result of a fitting process, the determined spin-Hamiltonian parameters are in reasonable agreement with the experimental values. The results are discussed.     

Passivating TiO2 coatings for silicon solar cells by pulsed laser deposition

Pulsed laser deposition was used to deposit TiO₂ anti-reflection coatings for silicon solar cells. We deposited smooth coatings with an optimal refractive index of 2.3 for use as anti-reflection coating. The introduction of passivating qualities was achieved by deposition in different gasses. The best result was obtained with deposition in a water vapour ambient. The plasma shape and the position of the substrate in the plasma appeared important for properties such as the smoothness, the thickness distribution and the passivating quality. An increase in the measured effective lifetime of up to 137% during modulated free carrier absorption measurements was observed.     

Preparation of CuInSe2/CuGaSe2 two layers absorber film by metal–organic chemical vapor deposition

Deposition of CuInSe₂ thin film on CuGaSe₂ thin film and vice versa has been studied by a low pressure metal–organic chemical vapor deposition technique with three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, and micro-Raman scattering. Good quality and well demarcated films are obtained only in the case of CuInSe₂ grown on CuGaSe₂. When CuGaSe₂ was grown on top of CuInSe₂ diffusion of Ga into CuInSe₂ was found to produce an alloy film instead.     

具有高阻抗本征SnO2过渡层的CdS/CdTe多晶薄膜太阳电池

采用超声喷雾热解法制备了具有高阻抗的本征SnO₂透明导电膜，将其运用在CdS层减薄了的CdS/CdTe多晶薄膜太阳电池中，对减薄后的CdS薄膜进行了XRD,AFM图谱分析，并对电池进行了光、暗I-V，光谱响应和C-V测试.结果表明，在高阻膜上沉积的减薄CdS薄膜(111)取向更明显，但易形成微孔.引入高阻层后，能消除CdS微孔形成的微小漏电通道，有效保护p-n结，改善了电池的并联电阻、填充因子和短波响应，使载流子浓度增加，暗饱和电流密度减小，从而电池性能得到改善，电池转换效率增加了14.4%. 关键词： CdTe电池 过渡层 效率     

基于GaSb/CdS薄膜热光伏电池的器件设计

基于GaSb薄膜热光伏器件是降低热光伏系统成本的有效途径之一, 本文主要针对GaSb/CdS薄膜热光伏器件结构进行理论分析. 采用AFORS-HET软件进行模拟仿真, 分析GaSb和CdS两种材料各自的缺陷态密度、界面态对电池性能的影响. 根据软件模拟可以得知, 吸收层GaSb的缺陷态密度以及GaSb与CdS之间的界面态密度是影响电池性能的重要因素. 当GaSb缺陷态增加时, 主要影响电池的填充因子, 电池效率明显下降. 而作为窗口层的CdS缺陷态密度对电池性能影响不明显, 当CdS缺陷态密度上升4个数量级时, 电池效率仅下降0.11%.