Photoluminescence of CuGaS2 and heterostructure formation with sputtered ZnS

Summary CuGaS₂ crystals grown by iodine transport exhibit room temperature photoluminescences at 2.45 eV and at 1.44 eV. The spectral distribution of the green emission is shown to be relatively well described by the calculated curve for a direct band-to-band transition withk-selection. The heterojunction formation has been tried between sulfur-treated CuGaS₂ crystals and low-resistivity amorphous ZnS films prepared by sputtering at room temperature. TheI–V characteristic of the diode shows rectifying behaviour, but no injection luminescence has been observed. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 nm) by an order of magnitude in the case of long-wavelength excitation and an enhancement of the ytterbium photoluminescence (980 nm) by almost 50 times and erbium photoluminescence by 25 times in the case of short-wavelength pumping. This luminescence enhancement is explained by the formation of additional channels of transfer of external excitation by silicon nanocrystallites in porous silicon to impurity ytterbium and erbium ions in tungsten-tellurite glass.     

Photoluminescence and photoconductivity of indium selenide single crystals doped with rare-earth elements

The paper discusses the results of the investigation of photolominescence spectra and photoconductivity spectral distribution of Nd-; Yb- and Er- doped InSe single crystals at 77 and 293 K. Rare-earth additions into InSe contributes to the appearance of new bands in the wavelength region 1.02÷1.06 mkm. The photoconductivity spectra obtained for the mentioned crystals at 77 and 293 K are given.     

Photoluminescence spectra of the AgGaTe2 single crystals doped with hydrogen

The photoluminescence spectra of single crystals of the ternary AgGaTe₂ compound obtained by the Bridgman-Stockbarger method are studied before and after bombardment by the 100-eV hydrogen ions of dose 10¹⁵ cm^?2. The spectra were detected in the temperature range from 10 to 300 K at various powers of laser excitation. The spectra exhibit emission bands related to the donor-acceptor recombination, free, and bound excitons. The intensity of these bands in crystals doped with hydrogen is higher than that in undoped crystals. This is explained by the passivation of defects in a crystal lattice by hydrogen. The binding energy of a free exciton and the band gap in AgGaTe₂ crystals are calculated at 10 K.     

Superposition-model analysis of rare-earth doped BaY 2 F 8

The energy level schemes of four rare-earth dopants (Ce 3+ , Nd 3+ , Dy 3+ , and Er 3+ ) in BaY 2 F 8 , as determined by optical absorption spectra, were fitted with a single-ion Hamiltonian and analysed within Newman's Superposition Model for the crystal field. A unified picture for the four dopants was obtained, by assuming a distortion of the F m ligand cage around the RE site; within the framework of the Superposition Model, this distortion is found to have a marked anisotropic behaviour for heavy rare earths, while it turns into an isotropic expansion of the nearest-neighbours polyhedron for light rare earths. It is also inferred that the substituting ion may occupy an off-center position with respect to the original Y 3+ site in the crystal.     

Photoluminescence characterization of rare-earth stoichiometric compounds of EuGa2S4

Photoluminescence properties of the stoichiometric compound of EuGa₂S₄ has been investigated for the first time. The emission appearing in the region of 510–620 nm has a high quantum efficiency value reaching 100% at low temperatures. The characteristics of the emission are similar to those of CaGa₂S₄:Eu, and can be considered to be due to phonon-terminated transition of the Eu ion. Based on the measured luminescence data, construction feasibility of unique high gain tunable lasers is discussed.     

Optical properties of CuGaS2

The absorption and reflection spectra of “green” and “orange” crystals are studied at low temperature. The “orange” crystal presents an excitonic spectrum characteristic for intrinsic material. The shift of the band gap with respect to the binary compound and the triplet structure are discussed. Weak details appear in the wavelength modulated reflection spectrum.     

稀土钇、镧掺杂TiO2薄膜的拉曼谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了未掺杂、掺杂钇和掺杂镧的TiO₂薄膜样品,对样品在700—1100 ℃范围内进行退火处理,并对样品的拉曼光谱进行了分析.分析表明:随着退火温度的升高,未掺杂TiO₂薄膜发生了从锐钛矿相经混相最终向金红石相的转换,掺杂钇和掺杂镧对TiO₂薄膜的晶相转换起阻碍作用,掺杂镧的阻碍作用更强;稀土掺杂能使TiO₂薄膜晶粒细化,并使晶粒内部应力增大从而阻碍晶格振动,掺杂镧比掺杂钇的效果 关键词： 2薄膜')" href="#">TiO₂薄膜 稀土掺杂 拉曼光谱 溶胶-凝胶     

Photoluminescence characteristics of ZnO doped with Eu powders

In this work, we have investigated the photoluminescence spectra of europium-doped zinc oxide crystallites prepared by a vibrating milled solid-state reaction method. X-ray diffraction, scanning electron microscopy, luminescence spectra and time-resolved spectra analysis were used to characterize the synthetic ZnO:Eu³⁺ powders. XRD results of the powders showed a typical wurtzite hexagonal crystal structure. A second phase occurred at 5 mol% Eu₂O₃-doped ZnO. The ⁵D₀-⁷F₁ (590 nm) and ⁵D₀-⁷F₂ (609 nm) emission characteristics of Eu³⁺ appeared after quenching with more than 1.5 mol% Eu₂O₃ doping. The Commission Internationale d’Eclairage (CIE) chromaticity coordinates of a ZnO:Eu³⁺ host excited at λ_ex=467 nm revealed a red-shift phenomenon with increase in Eu³⁺ ion doping. The lifetime of the Eu³⁺ ion decreased as the doping concentration was increased from 1.5 to 10 mol%, and the time-resolved ⁵D₀→⁷F₂ transition presents a single-exponential decay behavior.     

Photoluminescence of heavily doped n-InP

Photoluminescence and excitation spectra of weakly compensated n-type InP layers doped with tin in the density range from 3 × 10¹⁷ cm^-3 to 2 × 10¹⁹ cm^-3 are measured at T=2 K in order to get experimental informations about the influence of doping on important material parameters such as the band gap energy and the position of the quasi-Fermi level of electrons. The results derived from these investigations are compared with those obtained of relevant many-body theories to heavily doped semiconductors. Using RPA and Klauder's best (fifth) approximation the doping induced gap shrinkage of uncompensated n-InP is calculated. The comparison between theory and experiment yields the conclusion that for standard direct gap AIII-BV compounds such as InP and GaAs the compensation in principle expected has to be taken into the theoretical considerations. Moreover, we first present a “semianalytical” treatment of Klauder's multiple scattering approach which makes this theory easily applicable to other problems as for instance calculations of the luminescence line-shape of doped semiconductors.     

Photoluminescence and infrared absorption studies of Ge doped with Mg

The photoluminescence spectrum of Ge doped with the double acceptor Mg reveals lines due to both bound excitons and bound multiexciton complexes, which are in some ways similar to those previously reported for Ge:Be and Ge:Zn. As in Ge:Zn, the Ge:Mg bound exciton line was found to be a doublet, showing that the Mg double acceptor in Ge also has a split ground state. Further evidence for this ground state splitting is found from the temperature dependence of the infrared absorption spectrum of the Mg double acceptor.     

High-field magnetoresistance of noble metals containing rare-earth impurities

We report on magnetoresistance measurements in longitudinal and transverse magnetic fields up to 320 kG for silver and gold containing rare-earth impurities. We focus mainly on the strong anisotropy of the magnetoresistance related to the scattering of conduction electrons by the 4f quadrupoles (non-S ions) and we derive the magnitude of the electron-quadrupole interaction from the analysis of the results. We also consider the isotropic contribution to the magnetoresistance due to exchange scattering. In a number of alloys this contribution is negative in low fields, as this is usually observed in magnetic alloys, but becomes positive in high fields. This change of spin can be ascribed to crystal-field effects.     

Hydrothermal preparation of CuGaS2 crystallites with different morphologies

The CuGaS₂ crystallites with different morphologies were prepared at 160 °C through hydrothermal process by using CuCl, GaCl₃ solution, and thiourea as source materials. The samples were characterized by means of X-ray powder diffraction, element analysis, transmission electron microscopy, and photoluminescence (PL). In present route, as-prepared CuGaS₂ crystallites displayed spherical and whisker-like nanoparticles and snowflake-like micrometer particles. Room temperature PL spectrum of the snowflake-like crystallites exhibits a weak emission band at 540 nm and a broad strong emission band at 735 nm. The role that the reaction media played in the morphologies of the CuGaS₂ crystallites was investigated, and a possible reaction mechanism was proposed.     

掺杂稀土离子晶体中的电磁感应光透明现象

对在掺杂稀土离子晶体中实现电磁感应光透明进行了实验研究。首先,以Er3＋∶YAG晶体为样品,用旋转波近似下的密度矩阵方程理论计算了探测场的吸收特性随Er3＋离子浓度的变化规律,结果表明：在探测场失谐Δp=0时,形成了一个对于探测光透明的窗口,从而在理论上论证了在掺杂稀土离子晶体中实现电磁感应光透明效应的可行性。设计了一个以Pr3＋∶Y2SiO5晶体为样品的实验激发方案,吸收光谱显示,当温度为6 K时其在共振吸收峰处可形成一个完全透明的窗口,实现了在掺杂离子晶体中的电磁感应光透明。实验还分析了工作温度、耦合场失谐对探测光透过率的影响,结果显示：当样品温度上升到15 K时,透明窗口消失;耦合场的失谐量越大,透射率越小。     

Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films

Photoluminescence (PL) characteristics have been studied on undoped and Si-doped CuGaSe₂ single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-to-acceptor transition. The Si doping to CuGaSe₂ produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.     

CaSO4∶Eu磷光体的热释光特性研究

用热释光三维发光谱仪和蓝色滤光片的热释光仪测定了CaSO4:Eu2+的辐照后的发光曲线,得到峰温为107和144℃波长390nm的发光峰.辐照50d后,107℃发光峰已衰退,发光曲线呈现144℃单个发光峰.经一级力学方程式拟合得到的激活能E=(1.02±0.03)eV与初始升温法(1.07±0.01)eV和峰形法(1.02±0.01)eV的非常符合.用通用级动力学模型拟合发光曲线,得到陷阱能级E=(1.04±0.01)eV,频率因子s=(2.07±0.8)×1012s-1和动力学级数b=1.05±0.02 关键词： CaSO4∶Eu 剂量响应 动力学参量 热释光     

Photoluminescence spectra of doped GaAs films

We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×10¹⁸ cm^-3 and the film thickness is in the range of the penetration length of the PL excitation laser. PACS 78.20.-e; 78.55.Cr; 78.66.Fd