Impedance characteristics of ITO/Alq3/Al organic light-emitting diodes depending on temperature

Temperature-dependent impedance characteristics of ITO/Alq₃/Al organic light-emitting diodes were studied in the frequency range from 40 to 10⁸ Hz, and the temperature was varied from 10 to 300 K. At each temperature, the frequency-dependent complex impedance was measured under discrete bias voltages from −6 to +20 V, and the voltage-dependent impedance was measured at 10² Hz, 10³ Hz, 10⁴ Hz, and 10⁵ Hz. A Cole–Cole plot shows that there is one relaxation, and a parallel capacitor–resistor network in series with a contact resistance could be considered as an equivalent electrical circuit to this device. As the temperature decreases, a radius in the Cole–Cole plot increases, which indicates an increase of resistance of the device.     

Structural and AC conductivity study of CdTe nanomaterials

Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole–Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.     

Dielectric relaxation in NH4HSO4 above room temperature

The dispersion curves of the dielectric response of NH₄HSO₄ show that the corrected imaginary part of permittivity, εʺ, and its real part ε′ versus frequency reveal a dielectric relaxation around 9.1 × 10⁵ Hz at 31 °C, which shifts to higher frequencies (∼ 10⁶ Hz) as the temperatures increases. The relaxation frequency shows an activated relaxation process over the temperature range 31–83 °C with activation energy E_a = 0.14 eV, which is close to that derived from the dc conductivity. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SO₄⁻ reorientation that cause distortion and change the local lattice polarizability inducing dipoles like HSO₄⁻.     

Conductivity and dielectric relaxation phenomena in (NH4)2SO4 single crystal

AC impedance measurements have been carried out on (NH₄)₂SO₄ single crystals for the temperatures from 300 to 473 K and frequency range between 100 Hz and 4 MHz. The results reveal two distinct relaxation processes in the sample crystal. One is the dipolar relaxation with a peak at frequency slightly higher than 4 × 10⁶ Hz. The other is the charge carrier relaxation at lower frequencies. The frequency dependence of conductivity is described by the relation σ(ω) = Bωⁿ, and n = 1.32 is obtained at temperatures below 413 K. This value drops to 0.2 and then decreases slightly with increasing temperature. The dipolar response of the (NH₄)₂SO₄ single crystal under an ac field is attributed to the reorientation of dipoles. The contribution of charge carriers is increasing substantially with increasing temperature at temperatures above 413 K. The temperature variation of conductivity relaxation peaks follows the Arrhenius relation. The obtained activation energy for migration of the mobile ions for (NH₄)₂SO₄ single crystal was 1.24 eV in the temperature range between 433 and 468 K in this intrinsic region. It is proposed that the NH₄⁺ in the sample crystal has the contribution to the electrical conduction.     

Lithium-ionic diffusion and electrical conduction in the Li7La3Ta2O13 compounds

The electrical properties and the mechanism of lithium ionic diffusion in the Li₇La₃Ta₂O₁₃ compounds were investigated. The bulk and total conductivity at 300 K of the Li₇La₃Ta₂O₁₃ compound are about 3.3 × 10^? 6 S/cm and 2.6 × 10^? 6 S/cm, respectively. The activation energy of bulk and total conductivity is in the range of 0.38–0.4 eV. A prominent internal friction peak in Li₇La₃Ta₂O₁₃ compounds was observed around 280 K at 0.5 Hz, which is actually composed of two subpeaks (P₁ peak at lower temperature and P₂ peak at higher temperature). From the shift of peak position with frequency, the activation energy of 1.0 eV and the pre-exponential factor of relaxation time in the order of 10^? 18–10^? 21 s were obtained if one assumes Debye relaxation processes. These values of relaxation parameters strongly suggest the existence of interaction between the relaxation species (here lithium ions or vacancies). Based on the coupling model, the relaxation activation energies are deduced as 0.45 eV and the pre-exponential factor of relaxation time as 10^? 15 s. Judging from these relaxation parameters and the similarity of structure between Li₇La₃Ta₂O₁₃ and Li₅La₃Ta₂O₁₂ compounds, the P₁ and P₂ peaks are suggested to be related with the lithium ionic diffusion between 48g?48g and 24d?48g.     

Structures and dynamics of dodecyldimethylamine oxide intercalated into RUB-18

A new proton-conducting intercalation system of a layered polysilicate compound, octosilicate (RUB-18), was synthesized by exchanging Na⁺ ion with half- and full-ionized dodecyldimethylamine oxides. RUB-18 intercalated by half-ionized dodecyldimethylamine oxide was shown to contain alkyl chains of the trans zigzag conformation by powder X-ray diffraction and ¹³C CP-MAS NMR measurements. The DC electrical conductivity and the distribution factor β of the relaxation time were determined to be 6.4×10⁻⁶ S m⁻¹ and 0.67, respectively, from Cole–Cole plots of the complex impedance measured at room temperature under the relative humidity of 100%.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

Sensor application-related defect chemistry and electromechanical properties of langasite

The operation of langasite (La₃Ga₅SiO₁₄) resonators as sensors at elevated temperature and controlled atmospheres is examined. This paper focuses on mapping the regimes of gas-insensitive operation of uncoated langasite resonators and the correlation to langasite's defect chemistry for temperatures up to 1000 °C. As a measure of sensitivity, the fundamental resonant mode at 5 MHz is estimated to be determined to within ± 4 Hz by network analysis for resonators operated in air at temperatures below 1000 °C. The calculated frequency shift induced by redox-related reactions in langasite only exceeds the limit of ± 4 Hz below p_O2 ≈ 10^− 17 bar at 1000 °C, below 10^− 24 bar at 800 °C and below 10^− 36 bar at 600 °C. Water vapor is found to shift the resonance frequency at higher oxygen partial pressures. In the hydrogen-containing atmospheres applied here, langasite can be regarded as a stable resonator material above oxygen partial pressures of about 10^− 13 and 10^− 20 bar at 800 and 600 °C, respectively.     

Effects of nitrogen addition on the microstructures and soft magnetic properties of nanocrystalline Fe86Zr7B6Cu1 ribbons

The effects of nitrogen addition on the microstructures and soft magnetic properties of nanocrystalline Fe₈₆Zr₇B₆Cu₁ ribbons were studied. It is found that the grain size of BCC α-Fe decreases from 13.2 to 9.8 nm with the increase of nitrogen content from 0 to 1.24%. The initial permeability increases from 1.2×10⁴ to 4.4×10⁴ with the increase of nitrogen content from 0 to 0.78%, and then decreases with its further increase. The relaxation frequency increases from 2.5×10⁵ to 7.6×10⁵ Hz with increasing nitrogen content from 0 to 1.24%. The mechanisms for the effects of nitrogen addition on the grain size, the initial permeability, and the relaxation frequency were discussed.     

Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Porous lead zirconate titanate (PbZr_0.3Ti_0.7O₃, PZT30/70) thick films and detectors for pyroelectric applications have been fabricated on alumina substrates by screen-printing technology. Low temperature sintering of PZT thick films have been achieved at 850 °C by using Li₂CO₃ and Bi₂O₃ sintering aids. The microstructure of PZT thick film has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric properties were measured using HP 4284 at 1 kHz under 25 °C. The permittivity and loss tangent of the thick films were 94 and 0.017, respectively. Curie temperature of PZT thick film was 425 °C as revealed by dielectric constant temperature measurement. The pyroelectric coefficient was determined to be 0.9 × 10⁻⁸ Ccm⁻² K⁻¹ by dynamic current measurement. Infrared detector sensitive element of dual capacitance was fabricated by laser directly write technology. Detectivity of the detectors were measured using mechanically chopped blackbody radiation. Detectivity ranging from 1.23 × 10⁸ to 1.75 × 10⁸ (cm Hz^1/2 W⁻¹) was derived at frequency range from 175.5 Hz to 1367 Hz, and D^*’s −3 dB cut-off frequency bandwidth was 1.2 kHz. The results indicate that the infrared detectors based on porous thick films have great potential applications in fast and wide-band frequency response conditions.     

Dynamical XPS measurements for probing photoinduced voltage changes

Photoillumination with 405 nm laser causes shifts in XPS peaks of n-Si(100), and CdS. To distinguish between surface photovoltage (SPV), and charging, dynamical measurements are performed, while sample is subjected to square wave pulses of ± 10.00 V amplitude, and 10^?3–10⁵ Hz frequency. For n-Si, Si2p peaks are twinned at + 10.00 and ?10.00, yielding always 20.00 eV difference. Photoillumination shifts the twinned peaks to higher energies, but the difference is always 20.00 eV. However, for CdS, the measured binding difference of Cd3d peaks exhibits strong frequency dependence due to charging, which indicates that both fast SPV and slow charging effects are operative.     

Electrically forced microthreading of highly viscous dielectric liquids

The behaviour of three high viscosity (4875, 12 125 and 58 560 mPa s), dielectric liquids was investigated at flow rates of 10⁻¹⁰, 10⁻¹² and 10⁻¹⁴ m³ s⁻¹ and the applied voltage range 6–15 kV. In these experiments, due to the low electrical conductivity of the liquids (10⁻¹³ S m⁻¹) and therefore the ensuing high electrical relaxation time, classical electrohydrodynamic atomization conditions are not satisfied. Only dripping and unstable jetting were observed at 4875 mPa s. A transition from no jetting to stable microthreading was observed for the 12 125 and 58 560 mPa s samples. The relics accompanying the transition were found to change from discrete droplets to a continuous filament. Stable microthreading, which generates uniform filaments, was obtained for the 12 125 mPa s sample at flow rates 10⁻¹⁰ and 10⁻¹² m³ s⁻¹ and in the case of the 58 560 mPa s sample at all the flow rates investigated. The high viscosity assisted stable microthreading with the filament diameter decreasing with increasing applied voltage and more dramatically decreasing with reducing flow rate.     

A thin film magnetic field sensor of sub-pT resolution and magnetocardiogram (MCG) measurement at room temperature

We developed a very sensitive high-frequency carrier-type thin film sensor with a sub-pT resolution using a transmission line. The sensor element consists of Cu conductor with a meander pattern (20 mm in length, 0.8 mm in width, and 18 μm in thickness), a ground plane, and amorphous CoNbZr film (4 μm in thickness). The amplitude modulation technique was employed to enhance the magnetic field resolution for measurement of the high-frequency field (499 kHz), a resolution of 7.10×10^?13 T/Hz^1/2 being achieved, when we applied an AC magnetic field at 499 kHz. The phase detection technique was applied for measurement of the low frequency field (around 1 Hz). A small phase change was detected using a dual mixer time difference method. A high phase change of 130°/Oe was observed. A magnetic field resolution of 1.35×10^?12 T/Hz^1/2 was obtained when a small AC field at 1 Hz was applied. We applied the sensor for magnetocardiogram (MCG) measurement using the phase detection technique. We succeeded in measuring the MCG signal including typical QRS and T waves, and compared the MCG with a simultaneously obtained conventional electrocardiogram (ECG) signal.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.     

Phase errors in FSE signals due to low frequency electromagnetic interference

ObjectiveTo quantitatively evaluate induced phase errors in fast spin echo (FSE) signals due to low frequency electromagnetic inference (EMI).MethodsSpecific form of Bloch equation is numerically solved in time domain for two different FSE pulse sequences (ETL = 8) with two different bandwidths. A single spin is modeled at x = 10 cm, EMI frequencies are simulated from 1 to 1000 Hz and phase errors at different echo times are calculated.ResultsPhase errors in the received echo signals induced by EMI are significantly higher at low frequencies (< 200 Hz) than at high frequencies and the phase errors at low frequencies can be effectively reduced by using high receiving bandwidth.ConclusionPulse sequence bandwidth can be used to control the phase errors in the FSE signals due to low frequency EMI.     

Kinetics of microplasma atmospheric ion generation correlated with discharge current

The conditions necessary for achieving a stable bipolar ion generation (in the order of 10⁶ ion/cm³) and lower ozone concentration (less than 50 ppb) using a surface discharge microplasma device (SMD) by adjusting the applied voltage and frequency were experimentally determined and investigated. Measurements of the discharge current characteristics of the SMD revealed saturation against the frequency (1.5–2.5 kHz, depending on the applied voltage). The ion and ozone concentrations both increased in step with the discharge current in the lower frequency region. The ion concentration reached equilibrium in the frequency range of 200–500 Hz, and the point of equilibrium within that range depended on the applied voltage. The ozone concentration did not reach equilibrium under our experimental conditions (ozone concentration < 100 ppb). The kinetics of the ion/ozone generation rate with a focus on the plasma reaction and recombination of bipolar ions is discussed.     

Anelastic behavior of H2O ice single crystals doped with KOH

The internal friction of KOH-doped ice single crystals has been measured as a function of temperature in the frequency range from 0.1 to 20 Hz and compared with data on dielectric relaxation. There are two damping peaks, namely the α peak at around 85 K and the β peak at around 170 K. The Arrhenius relation of the α peak is almost equivalent to that for dielectric relaxation at the same temperatures. However, a relaxation corresponding to the β peak is not found in the dielectric measurements. The α peak is attributed to the rotation of water molecules by OH⁻ ions, which occupy H₂O sites. The β peak arises from the presence of the KOH, but no mechanism is offered at this stage.     

Dielectric relaxation of CsHSeO4 above room temperature

Dielectric measurements of CsHSeO₄ show a distinct relaxation at low frequencies at several isotherms (T < 363 K). For example, the relaxation frequency is around 4 kHz at 323 K and increases to higher frequencies (~ 100 kHz) as the temperature increases. The relaxation has an activation energy of 0.8 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SeO₄^? 2 reorientation that cause distortion and change the local lattice polarizability, inducing dipoles like HSeO₄^?.     

Design optimization of porous fibrous material for maximizing absorption of sounds under set frequency bands

In this paper, a methodology is proposed for designing porous fibrous material with optimal sound absorption under set frequency bands. The material is assumed to have a rigid frame and a hexagonal arrangement of fibers, and the analytical model derived by Johnson, Champoux and Allard (“JCA model”) is used to investigate the influences of the micro-structural parameters (fiber radius r and gap w) on sound absorption performance, and the macro-acoustic parameters used in JCA model is determined via finite element analysis for the hexagonal micro-structure. Moreover, a mathematical model is constructed to obtain the optimized micro-structure design, with fiber radius and gap as design parameters and average absorption performance of the porous fibrous material under set frequency band as target. Utilizing the constructed optimization model, the microstructure parameters are derived with optimal sound absorption under low frequency (20 ⩽ f < 500 Hz), medium frequency (500 ⩽ f < 2000 Hz) and high frequency (2000 ⩽ f < 15,000 Hz), respectively. On top of that, for a given thickness of porous fibrous material layer, the analytical relationship between fiber radius and optimal porosity under set frequency bands is constructed.