Crystalline orientation of the InN films prepared by atmospheric pressure halide chemical vapor deposition

The structural analysis of the hexagonal InN film prepared on a Si(100) substrate by the AP-HCVD technique using InCl₃ and NH₃ as starting materials were carried out by the X-ray pole figure analysis. The deposited films consist of the hexagonal InN pillar crystals. It was found that the pillar crystals, which have random rotation around the 100 axis, were grown at an angle of 70–90° to the substrate.     

Microscopic investigations of the indium nitride crystals with flower-like morphology grown by means of halide chemical vapour deposition under atmospheric pressure

Indium nitride prepared under atmospheric pressure using a halide chemical vapour deposition method has been examined by means of a variety of analytical techniques. From the scanning electron microscopic observations of the crystals deposited onto a Si(100) substrate, it was found that they have flower-like morphology. Based on the electron diffraction and X-ray photoelectron spectroscopic analyses, it was deduced that the flower-like InN crystals have a stoichiometry close to In:N=1:1. Transmission electron diffraction and selected area electron diffraction images showed that each petal and a style constituting the flower are of single crystals form with staggered hexagonal bipyramidal structure.     

Crystal quality,electrical and optical properties of single crystal pyrite films prepared by chemical vapor deposition under atmospheric pressure

Crystal quality, electrical and optical properties of single crystal thin films of pyrite prepared by means of chemical vapor deposition under atmospheric pressure (AP-CVD) using FeCl₃ and CH₃CSNH₂ as starting materials have been studied by various analytical method. X-ray diffraction and pole figure measurements showed that the as-grown films are single crystal. It was found that the quality of the pyrite films grown on a Si(100) substrate is significantly dependent upon the ratio of CH₃CSNH₂:FeCl₃ used as source materials. Electrical conductivity and Hall mobility increases as the CH₃CSNH₂:FeCl₃ ratio is increased, while carrier concentration decreases. This is explained in term of the formation of sulphur vacancies. A decrease of the CH₃CSNH₂:FeCl₃ ratio causes the increase of sulphur defects in the pyrite film. This also increases the number of electrons being trapped by the defects, while their mobility is reduced because of the electron being scattering at the vacancies. Strong absorption occurs in the photon energy range higher than 1 eV, and then reaches plateau with an absorption coefficient of about $5\times {10}^4{\text{cm}}^{-1}$ at $E>2\text{eV}$.     

Deposition of thin films and coatings by atmospheric pressure vapor plasma jet

An atmospheric pressure plasma jet generated by inductively coupled RF discharge and containing vapors of silicon compounds in argon-carrier gas was used to deposit a-Si∶H, a-Si∶(H, O), and a-SiC film. Rapid deposition up to 10 μm/min results from efficient material transport and is limited mainly by rates of surface reactions. Morphology, structure, and composition of deposits were studied.     

A new phase of the c(4 x 2) superstructure of alkanethiols grown by vapor phase deposition on gold

A self-assembled monolayer of dodecanethiol is grown onto (111) oriented gold by vacuum phase deposition and studied by ultrahigh vacuum scanning tunneling microscopy (STM). The films consist of domains that exhibit the c(4 x 2) over-structure of the hexagonal (square root of 3 x square root of 3)R30 of alkanethiols on gold. The domain size is only limited by the terrace size of the underlying gold. By higher resolution scans a new phase of the c(4 x 2) structure consisting of four inequivalent molecules that display different heights in the STM images is discovered.     

Chemical vapor deposition growth of phase-selective inorganic lead halide perovskite films for sensitive photodetectors

Inorganic lead halide perovskites are attractive optoelectronic materials owing to their relative stability compared to organic cation alternatives.The chemical vapor deposition(CVD) method offers potential for high quality perovskite film growth.The deposition temperature is a critical parameter determining the film quality owing to the melting difference between the precursors.Here,perovskite films were deposited by the CVD method at various temperatures between 500-800℃.The perovskite phase converts from CsPb₂Br₅ to CsPbBr₃ gradually as the deposition temperature is increased.The grain size of the perovskite films also increases with temperature.The phase transition mechanism was clarified.The photoexcited state dynamics were investigated by spatially and temporally resolved fluorescence measurements.The perovskite film deposited under 750℃ condition is of the CsPbBr₃ phase,showing low trap-state density and large crystalline grain size.A photodetector based on perovskite films shows high photocurrent and an on/off ratio of ~2.5×10⁴.     

In-situ X-ray reflectivity study of alkane films grown from the vapor phase

We carried out in-situ X-ray reflectivity study of nine n-alkane chains (CnH2n+2) on Si substrate, n in the range of 17-30. These films formed under vacuum at equilibrium vapor pressure of the respective alkane molecule. For all the alkanes studied we found a bilayer structure on the substrate, a higher density vertical layer at the air-film interface with the layer thickness equal to the all-trans length of the respective molecule, and a lower density layer below it with the molecules lying horizontal on the substrate. This model was earlier proposed for C32 films on Si by Volkmann et al.11 We observe that this model can fit the entire range of data from C17 to C30 in our experiments.     

Preparation of HfO2 nano-films by atomic layer deposition using HfCl4 and O2 under atmospheric pressure

HfO₂ nano-films were deposited onto a Si(100) substrate using an alternate reaction of HfCl₄ and O₂ under atmospheric pressure. Self-limiting growth of the HfO₂ was achieved in the range of the growth temperature above 873 K. The X-ray diffraction of the HfO₂ nano-films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. This gives effective permittivity value of 9.6 for the HfO₂ nano-film grown at 573 K.     

Polymorphism and phase control in titanyl phthalocyanine thin films grown by supersonic molecular beam deposition

Polymorphism in the growth of titanyl phthalocyanine films on dielectric substrates has been systematically studied by UV absorption and micro-Raman analyses, correlating structure and optical properties. We explored different growth regimes as a function of substrate temperature and growth rate using hyperthermal seeded supersonic beams. We identify and discuss specific signatures in micro-Raman spectra specifically correlated to the different phases and demonstrate the unprecedented ability of growing crystalline films and controlling the relative abundance of the different phases (amorphous, phase I, and phase II) by the beam parameters. We envisage the very promising perspective of controlling polymorphism at low temperatures via supersonic beam growth, paving the way for better performing devices.     

Observation of possible quantum interference effects in SrRuO3 epitaxial thin films grown by high-oxygen pressure dc sputtering

A careful study of the electronic transport and magnetotransport properties of metallic ferromagnetic SrRuO₃ (SRO) thin films is reported. Epitaxial (～150 nm) SRO films were grown on (001)-oriented SrTiO₃ (STO) substrates by dc sputtering technique at high oxygen pressure. Resistivity measurements were performed up to temperatures as low as 2 K in magnetic fields strengths of up to 9 T, applied perpendicular to the film plane. The films featured excellent metallic behavior at room temperature, with a resistivity, ρ(300 K) < 600 μΩ cm. The presence of minima in the ρ–T plots at ～4 K was clearly detected from these measurements. The 9 T magnetic field did not remove the minima signaling its nonmagnetic origin In addition, the ρ(μ₀H = 9 T,T) minima was slightly shifted to higher temperature and the ρ(μ₀H = 9 T,T ≤ 4 K) was larger when it was compared with ρ(μ₀H = 0 T,T ≤ 4 K). Increasing relevance of quantum corrections to the conductivity as the temperature is lowered has been invocated as possible cause of this anomalous electrical behavior. In this case, effects arising from quantum interference of the electronic wavelength are expected. Weak localization and renormalized electron–electron interaction have been considered as possible sources giving rise to quantum correction to the conductivity.     

Tetracene thin films grown by organic molecular beam deposition under a static magnetic field

The diamagnetic response of tetracene is exploited to increase the in-plane orientation of thin films grown by organic molecular beam deposition, while applying a magnetic field of 0.2 T parallel to the surface of the silica and potassium hydrogen phthalate substrates. The combined spectroscopic analysis of the films in the UV/visible region and morphological investigation of their surface performed by atomic force microscopy demonstrate a substantial increment of the film order when the magnetic field is applied along the c axis of potassium hydrogen phthalate, in agreement with the anisotropic magnetic susceptibility of tetracene.     

常压气相氧化羰基化合成碳酸二乙酯

碳酸二乙酯是一种重要的有机化工原料,可广泛用于合成农药如脱叶灵,医药如喹啉酮衍生物,中间体3-氧硫代羧酸酯,还可用于电子管阴极的镀层[1-3]。生产碳酸二乙酯的传统方法为:无水乙醇与光气反应生成氯甲酸乙酯,氯甲酸乙酯继续与乙醇反应生成碳酸二乙酯后经水洗蒸馏制成。使用光气为原料对设备的要求较高。我们在常压下气相羰基化合成碳酸二乙酯[4]:2ＮＯ+Ｃ2Ｈ5ＯＨ+0.5Ｏ2→2Ｃ2Ｈ5ＯＮＯ+Ｈ2Ｏ(1)ＣＯ+2Ｃ2Ｈ5ＯＮＯ→(Ｃ2Ｈ5Ｏ)2ＣＯ+2ＮＯ(2)产生的一氧化氮可与氧气和乙醇进行反应再生为亚硝酸乙酯,符合原子经济反应且几乎不放出对…     

Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method

The fundamentals of phase separations of single-crystal III-V nitride nanowires grown by self-catalytic chemical vapor deposition method have been studied. Experimental tools, such as high resolution transmission electron microscopy and scanning electron microscopy, have been used to characterize the nanowires. The study indicates that nanowires with diameters exceeding about 100 nm undergo phase transitions and/or crystal structure deterioration. The study highlights a relationship between the crystal structure and the kinetics of growth of nanowires.     

Structural variety of CdS in films synthesized by vapor deposition polymerization

Poly(p-xylylene)—CdS (PPX—CdS) nanocomposite films with different thicknesses (～0.2, ～0.5, ～1, and ～1.5 μm) and concentrations of CdS from 5 to 90 vol.%, as well as single-component CdS and PPX films with various thicknesses were studied by X-ray diffraction. The films were synthesized on polished silicon or quartz substrates by low-temperature vapor deposition method. It was shown that CdS nanoparticles in PPX—CdS films, depending on their thickness and CdS content, can have an X-ray amorphous structure, a defect crystal structure (RCP structure), or a wurtzite-type crystal structure. Similar structures were observed for single-component CdS films of the corresponding thickness. The sizes of the coherent scattering regions of CdS were determined for some nanocomposite and single-component films. Poly(p-xylylene) in the studied nanocomposite films was characterized by an X-ray amorphous structure.

     

Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

Fe₂O₃, Fe₃O₄ films have been prepared from Fe(OCH₂CH(CH₃)₂)₃–(CH₃)₂CHCH₂OH–2.2′-diethanola- mine (DEA)–poly(vinylpyrrolidone) (PVP) solutions by the spin-(SC) and dip-coating (DC) technique on SiO₂ and Si substrates. The maximum film thickness achieved without crack formation has been increased by incorporation of PVP (relative molecular weights 40000 and 360000) into the precursor solution. The stability of the precursor solutions was remarkably increased by addition of DEA. Compact, dense, and crack-free Fe₂O₃ films with thicknesses 900 nm (DC), 450 nm (SC), have been obtained via single-step deposition cycle. Higher-molecular-weight PVP has been more effective in increasing the thickness. The minimum concentration of DEA, which results in pronounced increase of solutions stability, is about R _P (n(DEA)/n(Fe) = 0.1). The high content of carboneous residue in the pyrolysed Fe₂O₃ films promotes the formation of Fe₃O₄ films via reduction in a gas flow of H₂/N₂ gas mixture. Microstructure, surface morphology, and magnetic properties of the films have been also investigated using SEM, AFM, and SQUID, respectively.     

A general atmospheric pressure chemical vapor deposition synthesis and crystallographic study of transition-metal sulfide one-dimensional nanostructures

A series of transition-metal sulfide one-dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour-liquid-solid (VLS) and vapour-solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (1 0 0), (1 1 0), or (0 0 x) directions owing to particular crystal structures. The adopted synthetic route was expected to provide abundant useful 1D building blocks for the research of mesoscopic physics and fabrication of nanoscale devices.     

Titanium arsenide films from the atmospheric pressure chemical vapour deposition of tetrakisdimethylamidotitanium and tert-butylarsine

Thin films of titanium arsenide have been deposited from the atmospheric pressure chemical vapour deposition (APCVD) of [Ti(NMe(2))(4)] and (t)BuAsH(2) at substrate temperatures between 350-550 °C. Highly reflective, silver coloured films were obtained which showed borderline metallic-semiconductor resistivities. The titanium arsenide films were analyzed by scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX), powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The films showed variable titanium to arsenic ratios but at substrate temperatures of 500 and 550 °C films with a 1 : 1 ratio of Ti : As, consistent with the composition TiAs, were deposited. Powder XRD showed that all of the films were crystalline and consistent with the formation of TiAs. Both nitrogen and carbon contamination of the films were negligible.     

Magnetic phase transitions in nanostructures induced by shear stress under high pressure

Magnetic phase transitions of the first and second order were revealed by Mössbauer spectroscopy in nanosystems of - and -ferric oxides and metallic europium subjected to shear stress (240°) under high pressure (20 kbar). For - and -ferric oxide nanoclusters, the Curie (Neel) points decreased to 300 K, whereas for nanostructured europium the Neel point increased from 90 to 100 K. The thermodynamic model of magnetic phase transitions predicting a change in the character of magnetic phase transitions and a decrease (increase) in the critical Neel (Curie) points in nanoclusters was developed. The type of magnetic phase transitions and the change in the critical points were caused by defects in nanoclusters, whose maximum concentration was observed for the clusters with the 20—50 nm size range.