Boron nanowires synthesized by laser ablation at high temperature

Boron nanowires have been synthesized by laser ablation at high temperature. The as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS). The boron nanowires have lengths of several tens of micrometers long and diameters of 30–60 nm. The effects of the synthesis conditions on the formation of the boron nanowires were investigated and possible growth mechanisms of the boron nanowires are discussed.     

Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures

In-doped ZnO (IZO) nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the IZO nanowires have been extensively investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The products in general contain several kinds of nanowires. In this work, a remarkable type of IZO zigzag nanowire with a periodical twinning structure has been investigated by transmission electron microscopy (TEM). HRTEM observation reveals that this type of IZO nanowire has an uncommonly observed zinc blend crystal structure. These nanowires, with a diameter about 100 nm, grow along the [111] direction with a well-defined twinning relationship and a well-coherent lattice across the boundary. In addition, an IZO nanodendrite structure was also observed in our work. A growth model based on the vapor-liquid-solid mechanism is proposed for interpreting the growth of zigzag nanowires in our work. Due to the heavy doping of In, the emission peak in photoluminescence spectra has red-shifted as well as broadened seriously.     

聚吡咯/硫化镉核壳纳米线的制备及整流特性

以无机多孔氧化铝膜为模板,利用气相沉积和原位电化学沉积方法成功地制备了有机-无机杂化聚吡咯/硫化镉核壳纳米线;采用扫描电子显微镜和透射电子显微镜分析了聚吡咯/硫化镉核壳纳米线的表面形貌和微结构.结果表明,内部的聚吡咯纳米线紧紧依附在外部的硫化镉纳米管中,并且硫化镉纳米管被聚吡咯全部填充.与此同时,在聚吡咯/硫化镉核壳纳米线中,外部硫化镉壳与内部聚吡咯核之间存在电荷转移;聚吡咯和硫化镉之间形成有机-无机杂化的P-N界面,从而导致单根聚吡咯/硫化镉核壳纳米线显示出不同于外部壳和内部核的整流特性.     

基于浓硼扩散层的硅纳米线谐振子制备

纳机电系统(NMES)由于具有体积小、智能化、可靠性高等优点而被广泛研究。其中纳米线谐振子的本征频率能够达到MHz甚至GHz,可应用于各种高性能的质量传感器、谐振器、滤波器等。但是,要制备形貌规则可控的纳米线谐振子,对加工技术要求很高。目前急需一种工艺简单、重复性好、三维尺度可控的硅纳米线制备方法。本文重点研究了基于浓硼扩散层的可集成硅纳米线谐振子的制备方法。该方法采用电子束光刻定义可控尺度硅纳米线,并利用TMAH腐蚀自停止效应实现谐振子的释放。文中还采用SEM对所制备的纳米线谐振子进行了表征。实验结果表明,基于浓硼扩散层制备的硅纳米线谐振子形貌规则,结构可控可调。该方法能够实现可控制的大面积、高产率、低成本、可集成的硅纳米线谐振子制备。     

Self-catalyst growth of single-crystalline CaB6 nanostructures

Large-scale calcium hexaboride (CaB₆) nanostructures have been successfully fabricated with self-catalyst method using calcium (Ca) powders and boron trichloride (BCl₃) gas mixed with hydrogen and argon. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area electron diffraction (SAED) were used to characterize the compositions, morphologies, and structures of the samples. Our results show that the nanowires are highly single crystals elongated preferentially in the [1 1 0] direction. The growth mechanism based on the self-catalyst process is simply discussed.     

溶胶凝胶模板法制备羟基磷灰石纳米线

以氯化钙和五氧化二磷的醇溶液为前驱体溶液,多孔阳极氧化铝(AAO)膜为模板,通过溶胶凝胶-模板法成功制备出羟基磷灰石(Ca10(PO4)6(OH)2,HAP)纳米线;利用扫描电镜、能量色散谱仪、透射电镜、X射线衍射仪及傅立叶变换红外光谱仪等分析了产物的组成和微结构;并讨论了纳米线的生长机理.结果表明,所制备的羟基磷灰石纳米线直径约为50nm、长度达20μm,分别与模板的孔径和厚度一致.     

Free-standing boron doped CVD diamond films grown on partially stabilized zirconia substrates

Boron doped diamond films have been grown adhered to silicon substrates by chemical vapor deposition using boron containing gases. In this work it was shown that it is possible to grow free-standing boron doped CVD diamond films on partially stabilized zirconia substrates using boron powder as the source for doping. Results from Raman spectroscopy confirmed the boron incorporation with concentration up to ∼10²⁰ cm⁻³. X-ray diffraction and scanning electron microscopy showed that the effect of boron incorporation in the microstructure of the diamond film is negligible. The measurement of the resistivity as a function of temperature confirmed the semiconductor behavior, as expected for p-type diamond.     

Controlled growth of semiconducting oxides hierarchical nanostructures

Semiconducting ZnO hierarchical nanostructure, where ZnO nanonails were grown on ZnO nanowires, has been fabricated under control experiment with a mixture of ZnO nanopowders and Sn metal powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches, serving as the catalyst for the vapor-liquid-solid growth mechanism. The morphology and microstructure of ZnO nanowire and nanonail were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight ZnO nanowires grow along [0001] direction. ZnO nanonails are aligned radially with respect to the surface the ZnO nanowire. The long axis direction of nanonails forms an angle of ∼30° to the [0001] direction.     

Enhanced UV photosensing properties of ZnO nanowires prepared by electrodeposition and atomic layer deposition

A new process enabling the synthesis of zinc oxide (ZnO) and Al-doped ZnO nanowires (NWs) for photosensing applications is reported. By combining atomic layer deposition (ALD) for the seed layer preparation and electrodeposition for the NW growth, high-quality ZnO nanomaterials were prepared and tested as ultraviolet (UV) sensors. The obtained NWs are grown as arrays perpendicular to the substrate surface and present diameters between 70 and 130 nm depending on the Al doping, as seen from scanning electron microscopy (SEM) studies. Their hexagonal microstructure has been determined using X-ray diffraction and Raman spectroscopy. An excellent performance in UV sensing has been observed for the ZnO NWs with low Al doping, and a maximal photoresponse current of 11.1 mA has been measured. In addition, initial studies on the stability have shown that the NW photoresponse currents are stable, even after ten UV on/off cycles.     

Controlled synthesis of Ag/TiO2 core-shell nanowires with smooth and bristled surfaces via a one-step solution route

Ag/TiO2 core-shell nanowires were synthesized via a one-step solution method without using a template. Interestingly, the shell morphologies can be controlled to be smooth or bristled by altering the reaction temperature. Moreover, the TiO2 shell thickness and bristle length can be tuned by changing the AgNO3 concentration. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected-area electron diffraction (SAED), energy-dispersive X-ray analysis (EDS), X-ray powder diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to characterize the resultant Ag/TiO2 core-shell nanowires. Moreover, the absorption peaks of our samples are significantly red-shifted compared with those of the uncoated pure silver nanowires, indicating that interaction between the core and shell occurred. On the basis of the experimental results, we proposed a template-induced Oswald ripening mechanism to explain the formation of the Ag/TiO2 core-shell nanowires.     

Characterization and field emission properties of ZnMgO nanowires fabricated by thermal evaporation process

In this paper, we investigate the roles of gold catalyst using modified thermal evaporation set-up in the growth process of ZnMgO nanowires. ZnMgO nanowires are fabricated on silicon substrates using different thickness of gold catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursors, based on Fick’s first law, is used to grow the ZnMgO nanowires. Field emission scanning electron microscopy images show that the ZnMgO nanowires are tapered. The optical properties of the ZnMgO nanowires are characterized by room temperature photoluminescence (PL) measurements. The PL studies demonstrate that the ZnMgO nanowires grown using this method have good crystallinity with excellent optical properties and have a larger band-gap in comparison to the pure ZnO nanowires. Field emission characterization shows that the turn-on field for the nanowires grown on the thinner gold film is lower than those grown on the thicker gold film.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物,利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线.为了解产物的结构、形貌、组分、微结构以及声子振动模式,对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析.分析显示合成的纳米线为六方铅锌矿结构,生长方向沿着[210]方向,长度均为10μm,直径在80-100 nm之间,x的值约为0.2.拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物, 利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线. 为了解产物的结构、形貌、组分、微结构以及声子振动模式, 对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析. 分析显示合成的纳米线为六方铅锌矿结构, 生长方向沿着[210]方向, 长度均为10 μm, 直径在80-100 nm之间, x的值约为0.2. 拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

Bicrystalline hematite nanowires

Bicrystalline nanowires of hematite (alpha-Fe(2)O(3)) have been successfully synthesized by the oxidation of pure iron. The product was characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM in combination with focal series reconstruction, energy-dispersive X-ray spectroscopy, and electron energy-loss spectroscopy. The bicrystalline nanowires have diameters of 20-80 nm and lengths up to 20 microm. All of the investigated materials are found to be alpha-Fe(2)O(3) with a rhombohedral crystal structure. Investigations indicate that most of the bicrystalline nanowires are nanotwins with ellipsoidal heads. The orientation relationship between the nanotwins can be described as (110)(M)//(110)(T), [110](M)//[0](T). An energy-filtered TEM investigation indicates that the ellipsoidal head is iron-rich. The growth mechanism of such unique nanostructures is considered to be a solid-phase growth via surface and internal diffusions of molecules from base to tip.     

One-step electrodeposition of Ag-decorated ZnO nanowires

A new route for synthesizing Ag-decorated ZnO nanowires (NWs) on conductive glass substrates using a one-step electrodeposition technique is described here. The structural, optical, and photoelectrochemical properties of Ag-decorated ZnO nanowires were studied in detail using techniques such X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, UV-visible spectroscopy, photoluminescence, and photoelectrochemical measurements. Both pure and Ag-decorated ZnO nanowires were found to crystallize in the wurtzite structure, irrespective of their Ag contents. Increasing the Ag content from pure ZnO NWs to 3% Ag ZnO NWs decreases the photoluminescence intensity, shifts the optical band gap to the red, and increases the photocurrent up to threefold. This behavior was attributed to the surface plasmon resonance effect induced by the Ag nanoparticles, which inhibits charge recombination and improves charge transport on the ZnO surface.     

Prepared Low Stress Cubic Boron Nitride Film by Physical Vapor Deposition

We present low stress cubic boron nitride (cBN) films with a transition layer deposited on the metal alloy substrates by tuned substrate radio-frequency magnetron sputtering. The films were characterized by Fourier transform infrared spectroscopy and transmission electron microscopy (TEM). The IR peak position of cubic boron nitride at 1006.3 cm⁻¹, which is close to the stressless state, indicates that the film has very low internal stress. The TEM image shows that pure CBN phase exists on the surface of the film. Several phases of boron nitride were found at the medium implantation dose. It is believed that the transition from the low ordered phases to cBN phase occurred during implantation.     

Synthesis and Photocatalytic Activity of One-dimensional ZnO-Zn2SnO4 Mixed Oxide Nanowires

Mixed oxide photocatalysts, ZnO-Zn2SnO4 (ZnO-ZTO) nanowires with different sizes were prepared by a simple thermal evaporation method. The ZnO-ZTO nanowires were characterized with a scanning electron microscope, X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive spectrometer, and X-ray photoelectron spectrThe photocatalytic activity of the ZnO-ZTO mixed nanowires were studied by observing the photodegradation behaviors of methyl orange aqueous solution. The results suggest that the ZnO-ZTO mixed oxide nanowires have a higher photocatalytic activity than pure ZnO and Zn2SnO4 nanowires. The photocatalyst concentration in the solution distinctly affects the degradation rate, and our results show that higher photodegradation efficiency can be achieved with a smaller amount of ZnO-ZTO nanowire catalyst, as compared to the pure ZnO and ZTO nanowires. Moreover, the photocatalytic activity can also be enhanced by reducing the average diameter of the nanowires. The activity of pure ZnO and ZTO nanowires are also enhanced by physically mixing them. These results can be explained by the synergism between the two semiconductors.     

Fe-Co-Ni合金纳米线有序阵列的模板合成与磁性

以二次阳极氧化的氧化铝膜为模板，用电化学沉积的方法成功地合成了Fe-Co-Ni三组份有序纳米线阵列.扫描电子显微镜（SEM）和透射电子显微镜(TEM)观察表明纳米线表面光滑、有序、高长径比；磁性测量表明,其矫顽力较同组份的膜材料有较大的提高.将样品在惰性气体氛围中不同温度下退火，随着退火温度增加，其纵向矫顽力有一个极值，而对应的横向矫顽力没有类似的变化，关于这一现象的机理,本文进行了初步的讨论. 图5参15     

InSb纳米线阵列的可控制备与光谱表征

采用脉冲电沉积结合阳极氧化铝模板技术制备了不同生长方向的闪锌矿型InSb纳米线阵列. 结果表明, 控制电解液中十二烷基硫酸钠(SDS)的浓度, 可使纳米线的择优生长方向从[400]向[220]方向转变. 利用X射线衍射仪、 场发射扫描电子显微镜、 高分辨透射电子显微镜对所制备纳米线的相组成和微结构进行了表征. 激光拉曼光谱结果表明, 不同生长方向的InSb纳米线阵列的拉曼光谱有明显差异. 与体材料相比, InSb纳米线阵列的红外吸收声子散射峰发生强烈红移, 其吸收带边发生了明显蓝移.     

Solvothermal synthesis and photoluminescent properties of ZnS/cyclohexylamine: inorganic-organic hybrid semiconductor nanowires

An inorganic-organic hybrid semiconductor, ZnS/CHA (CHA = cyclohexylamine) nanocomposites was successfully synthesized via a solvothermal method using CHA as solvent, which yielded uniform and ultralong nanowires with widths of 100-1000 nm and lengths of 5-20 microm. Changing the reaction conditions could alter the morphology and optical properties of the nanocomposites. The periodic layer subnanometer structures were identified by high-resolution transmission electron microscopy (HR-TEM) images, with thickness of approximately 2 nm. The composites exhibited a very large blue-shift in their optical absorption edge as well as an exciton excitation band due to a strong quantum confinement effect caused by the internal subnanometer-scale structures. The pure hexagonal wurtzite ZnS nanowires were also obtained by extracting the ZnS/CHA nanocomposites with dimethyl formamide (DMF). In addition, the luminescent properties of exciton and defect-related transitions in different samples of ZnS/CHA were discussed in detail.