掺Mo对NiSi薄膜热稳定性的改善

报导了在镍薄膜中掺入少量Mo提高了镍硅化物的热稳定性.结果表明，经650— 800℃快速热 退火形成的Ni(Mo)Si硅化物薄膜电阻值较低，约为2．4(Ω／□).XRD分析表明薄膜中只存在 NiSi相，而没有NiSi₂生成.由吉布斯自由能理论分析表明在Ni薄膜中掺人5．9 ％Mo对改善 Ni硅化物热稳定性起到至关重要的作用.经650—800℃快速热退火后的 Ni(Mo)Si／Si肖特基 二极管电学特性良好，势垒高度Φ_B为0．64—0．66eV，理想因子接近于1，更 进一步证明掺少量的Mo能够改善NiSi薄膜的热稳定性. 关键词： 镍硅化物 快速热退火 x射线衍射分析 卢瑟福背散射     

Ni全硅化金属栅功函数调节技术研究

通过制备栅内不同掺杂条件的Ni全硅化金属栅电容并分析其C-V和V_fb-EOT特性发现,Ga和Yb较常规的杂质而言具有更好的栅功函数调节能力,能够分别将Ni全硅化金属栅电极功函数调节到价带顶和导带底附近,满足高性能体硅平面互补金属氧化物半导体(CMOS)器件对栅电极功函数的要求. 同时根据电偶极子(Dipole)理论分析了Ga和Yb具有较强栅功函数调节能力的原因. 另外,研究发现栅内掺入Ga或Yb杂质后的Ni全硅化金属栅电容的电容值变大、栅极泄漏电流反而变小,通过对C-V和栅极泄漏电流特性进行分析,对这一现象进行了解释. 关键词： 金属栅电极 功函数 硅化物     

快速退火后重掺硼的分子束外延层的电学特性

对快速退火后用共蒸发Ｂ_２Ｏ₃方法实现重掺杂硼的硅分子束外延层的电学特性进行了研究．１１００℃退火可以使得外延层中载流子浓度提高４倍，空穴的霍耳迁移率与相同浓度下硅体材料的水平相当；外延层与衬底之间载流子浓度转变陡峭，获得了晶体质量良好的外延层． 关键词：     

快速热退火对Co/Si0.85Geo.15肖特基结电学特性的影响

用离子束溅射技术分别在SiO2和单晶Si衬底上沉积了Si1-xGex和Co薄膜.在不同温度下,对Co/Si1-xGex肖特基结进行快速热退火处理(RTA),对处理后的样品进行了表面形貌和电学测量.发现退火温度升高,样品表面粗糙度变大,理想因子也变大,但对肖特基势垒高度(SBH)的影响很小.分析认为,随着退火温度的升高,...     

ITO对新型AlGaInP红光LED特性的影响

用真空电子束蒸镀的方法制备氧化铟锡(indiumtin oxide,ITO)薄膜,制作了以300nmITO为窗口层的新型AlGaInP红光LED。在氮气环境下,对LED样品进行了40s快速热退火处理。随着退火温度增加,LED的光强先上升后下降,电压先下降后上升,并且两者都在435℃达到最优值。通过霍尔测试研究退火对ITO薄膜电学特性的影响,发现这是由于ITO在经过435℃退火后,电阻率最小,载流子浓度最大,因而减小了ITO的体电阻和p型欧姆接触电阻,降低了LED工作电压,同时增加了ITO做为电流扩展层的电流扩展效果,提高了LED光强。     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

B+注入HgCdTe快速热退火的研究

借助二次离子质谱和俄歇电子能谱对B⁺注入HgCdTe有无ZnS膜包封在快速热退火条件下表层的Hg损失进行了深入的分析-快速热退火温度为300，350和400℃，退火时间为10s-ZnS膜厚度为160nm-结果表明，300℃，10s快速热退火后，有ZnS膜包封的HgCdTe表层没有Hg损失-对B⁺注入HgCdTe N⁺-P结快速热退火工艺流程进行了优化-结果表明，快速热退火放在光刻金属电极之后进行，可以改善结的特性- 关键词：     

ITO退火对GaN基LED电学特性的影响

近些年来,越来越多的发光二极管采用铟锡氧化物(ITO)作为电流扩展层,但是如果不对其进行任何处理,得到的发光二极管的电学特性很差,要得到好的电学特性需要对长有铟锡氧化物的发光二极管进行退火处理.针对不同的退火时间和退火温度对发光二极管的电学特性影响不同的问题,通过测量不同条件下退火得到的发光二极管的理想因子和串联电阻, 根据Shah等人提出的模型进行分析,推测出铟锡氧化物和P型氮化镓的接触特性.结果表明:发光二极管的电学特性开始随着退火温度的升高和时间的增加到达一个优值,如果继续增加温度或者时间都会导致发光二极管电学特性的下降.这样有利于优化退火温度和时间, 得到电学性能较好的器件.     

纳米SiC蓝光发射的研究

在４．６８ｅＶ的激光激发下，室温ＣＶＤ合成的纳米ＳｉＣ粉体，可发射４７５ｎｍ的蓝光，经６００～１１００℃在Ｎ２气氛下进行快速退火（ＲＴＡ）处理，其荧光强度随退火温度升高而增强，当Ｔ≥９００℃时，荧光强度下降，但发光峰位与退火温度无关．通过ＸＲＤ、ＩＲ、ＴＥＭ、ＸＰＳ等研究，认为纳米ＳｉＣ中与氧有关的缺陷可能是引起４７５ｎｍ蓝光发射的主要原因     

热退火诱导纳米银膜形貌变化对表面等离激元共振特性的影响

采用磁控溅射技术制备并通过不同温度的快速热退火得到了不同表面形貌的纳米银膜。利用XRD,SEM和紫外-可见-近红外透射光谱等技术研究了纳米银膜的结构、表面形貌与光学性质。实验结果表明,随着退火温度的升高,银膜开口面积分数、银岛(纳米粒子)间距增大,长宽比减小,银岛由各向异性的蠕虫状变成各向同性的纳米球;表面等离激元共振带发生连续的蓝移,半高宽变窄。分析表明,纳米银膜的表面等离激元共振特性可以通过热退火诱导的表面形貌变化实现调整。     

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 °C, could diffuse through c-NiW at 550 °C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.     

Tailoring of nickel silicide contacts on silicon carbide

Co-deposition technique by means of simultaneous ion beam sputtering of nickel and silicon onto SiC was performed for tailoring of Ni-silicide/SiC contacts. The prepared samples were analysed by means of XRD and XPS in order to obtain information about the surface and interface chemistry. Depth profiling was used in order to analyse in-depth information and chemical distribution of the specimens. XRD results showed that the main phase formed is Ni₂Si. The XPS analysis confirmed the formation of the silicide on the surface and showed details about the chemical composition of the layer and layer/substrate interface. Moreover, the XPS depth profiles with detailed analysis of XPS peaks suggested that tailoring of C distribution could be monitored by the co-deposition technique employed.     

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

After post-silicidation annealing at various temperatures for 30 min,abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi,with As-,In-,and Sb-doped Si substrates of nickel germanosilicide without any dopants.The NiSi thickness,dopant species,doping concentration,and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration.Larger dopants than Si,thinner NiSi thickness and SiGe substrates,and higher dopant concentrations promote abnormal oxidation and agglomeration.     

Thermal stability of atomically flat metal nanofilms on metallic substrates

By means of variable temperature scanning tunneling microscope we studied the morphology and electronic structure of Pb films grown on Cu(1 1 1). Due to the spatial confinement of electrons, the islands display quantized energy levels. At 300 K, Pb forms 3D nanostructures with magic heights, that correspond to islands having a quantum well state (QWS) far from the Fermi energy. Below 100 K Pb grows in a quasi-layer-by-layer fashion. The QWS that develop in the films determine their total energy and, accordingly, their thermal stability. Films of particularly magic thickness are stable upon heating to 300 K.     

Formation of oriented rodlike nickel silicide precipitates during magnetron deposition of carbon and nickel on silicon

Formation of rodlike structures elongated in the 〈100〉 and 〈010〉 directions of silicon crystal was observed during magnetron codeposition of carbon and nickel on (100) silicon substrate with a natural oxide layer. Rodlike structures did not form during deposition in similar conditions on (111) silicon substrate. It has been revealed that the rodlike structures represent epitaxial nickel silicide precipitates. The results of experimental study of the composition, structure, and shape of forming silicide clusters as a function of the silicon substrate orientation and the codeposited layer thickness are presented.     

Threshold characteristics of polycrystalline germanium silicide microbolometers

The threshold characteristics of polycrystalline germanium silicide microbolometers are calculated. It is shown that the dependence of detectivity on specific resistance of the microbolometer exhibits a maximum. The optimal voltage and specific-resistance ranges are determined for improving the threshold characteristics. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 51–55, December, 2007.     

Thermal stability and electrical properties of copper nitride with In or Ti

Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N,a material that decomposes below 300℃,and thus promises many interesting applications in directwriting.The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure,surface morphology,and temperature dependence of electrical resistivity.More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice.A small amount of In or Ti can improve the crystallinity,and consequently the surface morphology.While the decomposition temperature is rarely influenced by In,the Ti-doped sample,Cu59.31Ti2.64N38.05,shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks,even after annealing at 500℃.Both In and Ti reduce the bandgap of the original Cu3N phase,resulting in a smaller electrical resistivity at room temperature.The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K.These results can be useful in improving the applicability of copper-nitride-based thin films.     

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.