Characteristic Spectral Patterns in the Carbon‐13 Nuclear Magnetic Resonance Spectra of Hexagonal and Crenellated Graphene Fragments

Nuclear magnetic resonance (NMR) spectroscopy is an important molecular characterisation method that may aid the synthesis and production of graphenes, especially the molecular‐scale graphene nanoislands that have gathered significant attention due to their potential electronic and optical applications. Herein, carbon‐13 NMR chemical shifts were calculated using density functional theory methods for finite, increasing‐size fragments of graphene, hydrogenated graphene (graphane) and fluorinated graphene (fluorographene). Both concentric hexagon‐shaped (zigzag boundary) and crenellated (armchair) fragments were investigated to gain information on the effect of different types of flake boundaries. Convergence trends of the ¹³C chemical shift with respect to increasing fragment size and the boundary effects were found and rationalised in terms of low‐lying electronically excited states. The results predict characteristic behaviour in the ¹³C NMR spectra. Particular attention was paid to the features of the signals arising from the central carbon atoms of the fragments, for graphene and crenellated graphene on the one hand and graphane and fluorographene on the other hand, to aid the interpretation of the overall spectral characteristics. In graphene, the central nuclei become more shielded as the system size increases whereas the opposite behaviour is observed for graphane and fluorographene. The ¹³C signals from some of the perimeter nuclei of the crenellated fragments obtain smaller and larger chemical shift values than central nuclei for graphene and graphane/fluorographene, respectively. The diameter of the graphenic quantum dots with zigzag boundary correlates well with the predicted carbon‐13 chemical shift range, thus enabling estimation of the size of the system by NMR spectroscopy. The results provide data of predictive quality for future NMR analysis of the graphene nanoflake materials.     

Graphane/fluorographene bilayer: considerable C-H···F-C hydrogen bonding and effective band structure engineering

Systematic density functional theory (DFT) computations revealed the existence of considerable C-H···F-C bonding between the experimentally realized graphane and fluorographene layers. The unique C-H···F-C bonds define the conformation of graphane/fluorographene (G/FG) bilayer and contribute to its stability. Interestingly, G/FG bilayer has an energy gap (0.5 eV) much lower than those of individual graphane and fluorographene. The binding strength of G/FG bilayer can be significantly enhanced by applying appropriate external electric field (E-field). Especially, changing the direction and strength of E-field can effectively modulate the energy gap of G/FG bilayer, and correspondingly causes a semiconductor-metal transition. These findings open new opportunities in fabricating new electronics and opto-electronics devices based on G/FG bilayer, and call for more efforts in using weak interactions for band structure engineering.     

Cohesive‐Energy‐Resolved Bandgap of Nanoscale Graphene Derivatives

With a size‐dependent cohesive energy formula for two‐dimensional coordinated materials, the bandgap variation in quantum dots and nanoribbons of graphene derivatives, such as graphane, fluorographene and graphene oxides, is investigated. The bandgap is found to increase substantially as the diameter or width of the nano‐sized material decreases. The bandgap variation is attributed to the change in cohesive energy of edge carbon atoms, and is associated with the physicochemical nature and degree of edge saturation. These predictions agree with previously reported computer simulation results, and have potential application in wide‐band optics and optoelectronics.     

Stability, electronic and magnetic properties of embedded triangular graphene nanoflakes

Stability, electronic and magnetic properties of triangular graphene nanoflakes embedded in graphane (graphane-embedded TGNFs) are investigated by density functional theory. It is found that the interface between the embedded TGNF and graphane is stable since the diffusion of H atoms from the graphane region to the embedded TGNF is energetically unfavorable with high energy barriers. The electronic and magnetic properties of the system completely depend on the embedded TGNF. The band gaps of graphane-embedded ATGNFs (armchair-edged TGNFs) arise due to the quantum confinement, while the special characteristics of nonbonding states of graphane-embedded ZTGNFs (zigzag-edged TGNFs) play an important role in their electronic properties. As the edge sizes increase, the differences of band gaps between graphane-embedded TGNFs and the isolated ones decrease. Furthermore, owing to the partially paired p(z) orbitals of edge C atoms, graphane-embedded ZTGNFs exhibit a ferrimagnetic ground state with size-dependant total spin being consistent with Lieb's theorem. Our work provides a possible way to obtain TGNFs without physical cutting.     

Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs

Two-dimensional(2D) materials with a high density and low power consumption have become the most popular candidates for next-generation semiconductor electronic devices. As a prototype 2D material, graphene has attracted much attention owing to its stability and ultrahigh mobility. However, zero band gap of graphene leads to very low on-off ratios and thus limits its applications in electronic devices, such as transistors. Although some new 2D materials and doped graphene have nonzero band gaps, the electronic mobility is sacrificed. In this study, to open the band gap of graphene with high electronic mobility, the structure and property of BN-doped graphene were evaluated using first-principles calculations. The formation energies indicate that the six-membered BN rings doped graphene has the most favorable configuration. The band structures show that the band gaps can be opened by such type of doping. Also, the Dirac-cone-like band dispersion of graphene is mostly inhibited, ensuring high electronic mobility. Therefore, codoping BN into graphene might provide 2D materials with nonzero band gaps and high electronic mobility.     

σ/σ- And π/π-interactions are equally important: multilayered graphanes

The properties of single-sheet [n]graphanes, their double-layered forms (diamondoids), and their van der Waals (vdW) complexes (multilayered [n]graphanes) were studied for n = 10-97 at the dispersion-corrected density functional theory (DFT) level utilizing B97D with a 6-31G(d,p) basis set; for comparison, we also computed a series of structures at M06-2X/6-31G(d,p) as well as B3LYP-D3/6-31G(d,p) and evaluated SCS-MP2/cc-pVDZ single-point energies. The association energies for the vdW complexes reach 120 kcal mol(-1) already at 2 nm particle size ([97]graphane dimer), and graphanes adopt layered structures similar to that of graphenes. The association energies of multilayered graphanes per carbon atom are rather similar and independent of the number of layers (ca. 1.2 kcal mol(-1)). Graphanes show quantum confinement effects as the HOMO-LUMO gaps decrease from 8.2 eV for [10]graphane to 5.7 eV for [97]graphane, asymptotically approaching 5.4 eV previously obtained for bulk graphane. Similar trends were found for layered graphanes, where the differences in the electronic properties of double-sheet CH/σ vdW and double-layered CC/σ diamondoids vanish at particles sizes of 1 nm. For comparison, we studied the parent CC/π systems, i.e., the single- and double-sheet [n]graphenes (n = 10-130) for which the association energies demonstrate the same trends as in the case of [n]graphanes; in both cases the band gaps decrease with an increase in system size. The [112]graphene dimer (HOMO-LUMO gap = 0.5 eV) already approaches the 2D metallic properties of graphite.     

Dispersion in the Mott insulator UO2: A comparison of photoemission spectroscopy and screened hybrid density functional theory

We present a comparison between the screened hybrid density functional theory of Heyd, Scuseria, and Enzerhof (HSE06) and high-resolution photoemission (PES) measurement on a single crystal of UO(2). Angle-resolved photoemission data show a slight dispersion in the f-orbital derived bands in good agreement with the HSE band structure. The effect of spin-orbit coupling on the HSE band gap has also been calculated and found to be negligible.     

Van Der Waals heterogeneous layer‐layer carbon nanostructures involving π···H‐C‐C‐H···π···H‐C‐C‐H stacking based on graphene and graphane sheets

Noncovalent interactions involving aromatic rings, such as π···π stacking, CH···π are very essential for supramolecular carbon nanostructures. Graphite is a typical homogenous carbon matter based on π···π stacking of graphene sheets. Even in systems not involving aromatic groups, the stability of diamondoid dimer and layer‐layer graphane dimer originates from C − H···H − C noncovalent interaction. In this article, the structures and properties of novel heterogeneous layer‐layer carbon‐nanostructures involving π···H‐C‐C‐H···π···H‐C‐C‐H stacking based on [n ]‐graphane and [n ]‐graphene and their derivatives are theoretically investigated for n = 16–54 using dispersion corrected density functional theory B3LYP‐D3 method. Energy decomposition analysis shows that dispersion interaction is the most important for the stabilization of both double‐ and multi‐layer‐layer [n ]‐graphane@graphene. Binding energy between graphane and graphene sheets shows that there is a distinct additive nature of CH···π interaction. For comparison and simplicity, the concept of H‐H bond energy equivalent number of carbon atoms (noted as NHEQ), is used to describe the strength of these noncovalent interactions. The NHEQ of the graphene dimers, graphane dimers, and double‐layered graphane@graphene are 103, 143, and 110, indicating that the strength of C‐H···π interaction is close to that of π···π and much stronger than that of C‐H···H‐C in large size systems. Additionally, frontier molecular orbital, electron density difference and visualized noncovalent interaction regions are discussed for deeply understanding the nature of the C‐H···π stacking interaction in construction of heterogeneous layer‐layer graphane@graphene structures. We hope that the present study would be helpful for creations of new functional supramolecular materials based on graphane and graphene carbon nano‐structures. © 2017 Wiley Periodicals, Inc.     

Predicted a honeycomb metallic BiC and a direct semiconducting Bi2C monolayer as excellent CO2 adsorbents

We predicted two stable two-dimensional materials of carbon and bismuth elements, namely BiC and Bi₂C monolayers. The stabilities of two monolayers were examined by cohesive energy, Born criteria, firstprinciple MD simulations and phonon spectra, respectively. By including the spin-orbit coupling effects,the Bi C monolayer is a metal and the Bi₂C monolayer possesses a narrow direct（indirect） band gap of 0.403（0.126） e V under the HSE06（GGA-PBE） functional. For the adsorptio...     

Band‐Structure Engineering of ZnO by Anion–Cation Co‐Doping for Enhanced Photo‐Electrochemical Activity

To look for efficient visible light‐driven catalysts for photo‐electrochemical (PEC) water‐splitting, the band structure and optical absorption of monodoped, compensated, and noncompensated n–p pairs of co‐doped bulk ZnO are systemically studied by using both general gradient approximation and hybrid density functional theory approaches (PBE and HSE). Calculations show that n–p co‐doping cannot only enhance the stability that stems from the strong electrostatic attraction between the n‐ and p‐type dopants, but also effectively reduce the band‐gap of ZnO. More importantly, compensated (Ti+C) and noncompensated (Sc+C) and (Cr+C) co‐doped ZnO may be compelling candidates for PEC water‐splitting because of their narrowed band‐gaps, potentially reduced electron–hole recombination centers, appropriate band‐edge positions, enhanced optical absorption, and good stability.     

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory with the with the Heyd-Scuseria-Ernzerhof {HSE06 [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 134, 8207 (2003); 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In content is calculated and a strong bowing at low In content is found, described by bowing parameters 2.29 eV at 6.25% and 1.79 eV at 12.5%, indicating the band gap cannot be described by a single composition-independent bowing parameter. Valence-band maxima (VBM) and conduction-band minima (CBM) are aligned by combining bulk calculations with surface calculations for nonpolar surfaces. The influence of surface termination [(1100) m-plane or (1120) a-plane] is thoroughly investigated. We find that for the relaxed surfaces of the binary nitrides the difference in electron affinities between m- and a-plane is less than 0.1 eV. The absolute electron affinities are found to strongly depend on the choice of XC functional. However, we find that relative alignments are less sensitive to the choice of XC functional. In particular, we find that relative alignments may be calculated based on Perdew-Becke-Ernzerhof [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 134, 3865 (1996)] surface calculations with the HSE06 lattice parameters. For InGaN we find that the VBM is a linear function of In content and that the majority of the band-gap bowing is located in the CBM. Based on the calculated electron affinities we predict that InGaN will be suited for water splitting up to 50% In content.     

Band gap engineering of double-cation-impurity-doped anatase-titania for visible-light photocatalysts: a hybrid density functional theory approach

In this study, we have used cation-passivated codoping of Nb with Ga/In and also of W with Zn/Cd to modulate the band structure of anatase-TiO(2) to extend absorption to longer visible-light wavelengths. We adopted generalized Kohn-Sham theory with the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional for exchange and correlation. It has been found that (W, Cd)-doped TiO(2) should be a strong candidate for visible-light photocatalyst materials owing to the largest extent of band gap narrowing and the formation of continuum band, without movement of the valence band. It is argued that this design principle for band-edge modification can also be applied to other wide-band-gap semiconductors.     

Band gap anomalies of the ZnM2(III)O4 (M(III)=Co, Rh, Ir) spinels

Development of high figure-of-merit p-type transparent conducting oxides has become a global research goal. ZnM(2)(III)O(4) (M(III) = Co, Rh, Ir) spinels have been identified as potential p-type materials, with ZnIr(2)O(4) reported to be a transparent conducting oxide. In this article the geometry and electronic structure of ZnM(2)(III)O(4) are studied using the Perdew-Purke-Ernzerhof generalized gradient approximation (PBE-GGA) to density functional theory and a hybrid density functional, HSE06. The valence band features of all the spinels indicate that they are not conducive to high p-type ability, as there is insufficient dispersion at the valence band maxima. The trend of increasing band-gap as the atomic number of the M(III) cation increases, as postulated from ligand field theory, is not reproduced by either level of theory, and indeed is not seen experimentally in the literature. GGA underestimates the band-gaps of these materials, while HSE06 severely overestimates the band-gaps. The underestimation (overestimation) of the band-gaps by GGA (HSE06) and the reported transparency of ZnIr(2)O(4) is discussed.     

Theoretical study of CeO2 and Ce2O3 using a screened hybrid density functional

The predicted structures and electronic properties of CeO(2) and Ce(2)O(3) have been studied using conventional and hybrid density functional theory. The lattice constant and bulk modulus for CeO(2) from local (LSDA) functionals are in good agreement with experiment, while the lattice parameter from a generalized gradient approximation (GGA) is too long. This situation is reversed for Ce(2)O(3), where the LSDA lattice constant is much too short, while the GGA result is in reasonable agreement with experiment. Significantly, the screened hybrid HSE functional gives excellent agreement with experimental lattice constants for both CeO(2) and Ce(2)O(3). All methods give insulating ground states for CeO(2) with gaps for the 4f band lying between 1.7 eV (LSDA) and 3.3 eV (HSE) and 6-8 eV for the conduction band. For Ce(2)O(3) the local and GGA functionals predict a semimetallic ground state with small (0-0.3 eV) band gap but weak ferromagnetic coupling between the Ce(+3) centers. By contrast, the HSE functional gives an insulating ground state with a band gap of 3.2 eV and antiferromagnetic coupling. Overall, the hybrid HSE functional gives a consistent picture of both the structural and electronic properties of CeO(2) and Ce(2)O(3) while treating the 4f band consistently in both oxides.     

Functionalization of Hydrogenated Graphene: Transition‐Metal‐Catalyzed Cross‐Coupling Reactions of Allylic C−H Bonds

The chemical functionalization of hydrogenated graphene can modify its physical properties and lead to better processability. Herein, we describe the chemical functionalization of hydrogenated graphene through a dehydrogenative cross‐coupling reaction between an allylic C?H bond and the α‐C?H bond of tetrahydrothiophen‐3‐one using Cu(OTf)₂ as the catalyst and DDQ as the oxidant. The chemical functionalization was confirmed by X‐ray photoelectron spectroscopy and Fourier transform infrared spectroscopy and visualized by scanning electron microscopy. The functionalized hydrogenated graphene material demonstrated improved dispersion stability in water, bringing new quality to the elusive hydrogenated graphene (graphane) materials. Hydrogenated graphene provides broad possibilities for chemical modifications owing to its reactivity.     

Facile synthesis of wide-bandgap fluorinated graphene semiconductors

The bandgap opening of graphene is extremely important for the expansion of the applications of graphene-based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical-vapor deposition technologies. Herein, an eco-friendly, highly effective, low-cost, and highly scalable synthetic approach is reported for synthesizing wide-bandgap fluorinated graphene (F-graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few-layer F-graphene. Experimental and theoretical results show that the bandgap of F-graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range.     

Systematic study of the effect of HSE functional internal parameters on the electronic structure and band gap of a representative set of metal oxides

The effect of the amount of Hartree–Fock mixing parameter (α ) and of the screening parameter (w ) defining the range separated HSE type hybrid functional is systematically studied for a series of seven metal oxides: TiO₂, ZrO₂, CuO₂, ZnO, MgO, SnO₂, and SrTiO₃. First, reliable band gap values were determined by comparing the optimal α reproducing the experiment with the inverse of the experimental dielectric constant. Then, the effect of the w in the HSE functional on the calculated band gap was explored in detail. Results evidence the existence of a virtually infinite number of combinations of the two parameters which are able to reproduce the experimental band gap, without a unique pair able to describe the full studied set of materials. Nevertheless, the results point out the possibility of describing the electronic structure of these materials through a functional including a screened HF exchange and an appropriate correlation contribution. © 2017 Wiley Periodicals, Inc.     

One-Step Synthesis of Janus Fluorographene Derivatives

Fluorographene, a two-dimensional derivative of graphene, is an excellent starting material for the synthesis of graphene derivatives. In this work, a one-step, substrate-free method for the asymmetric functionalization of fluorographene layers with hydroxyl groups by a facile nucleophilic substitution reaction is reported. Such a chemical modification occurs in a biphasic aqueous–organic system under mild conditions, leading to Janus graphene nanosheets functionalized by hydroxyl groups on one side and retaining fluorine atoms on the other. The reported experimental route paves the way for two-dimensional bifacial graphene templates, thus broadening the application potential of graphene materials.     

Density functional theory calculations for two-dimensional silicene with halogen functionalization

The electronic structures and band gaps of silicene (the Si analogue of graphene) adsorbed with halogen elements are studied using the density functional theory based screened exchange local density approximation method. It is found that the band gaps of silicene adsorbed with F, Cl, Br and I have a nonmonotonic change as the periodic number of the halogen elements increases. This is attributed to the transfer of contributions to band gaps from Si-Si bonding to Si-halogen bonding.