基于多峰协同和纯元素特征峰面积归一化的重叠峰快速解析算法

由于元素间特征峰的相互干扰,受实验仪器能量分辨率的影响,当多个元素的特征峰峰位相近且展宽较宽时就会形成重叠峰。以分离度低且分解需求精度高的重叠峰为研究对象,提出一种基于多峰协同和纯元素特征峰面积归一化的重叠峰快速解析算法,并结合实际的X射线荧光光谱进行了新方法的验证。选取镝铁合金的X射线荧光光谱图作为实例,在该实验条件下镝L_α特征峰和铁K_α特征峰形成的重叠峰分离度约为0.273 5,同时还存在分离度较大但荧光产额较低的镝L_β特征峰和铁K_β特征峰。首先,配置浓度范围(7.8～8.2 mg·mL^-1)的镝标液和浓度范围(1.8～2.2 mg·mL^-1)的铁标液进行测量获取到纯元素谱图,分别进行面积归一化处理并取平均得到镝L_α峰和铁K_α峰的归一化特征峰。然后,使用镝、铁标液混兑出铁元素质量百分比范围在19.1%～21%,梯度为0.1%的20组样品液进行测量。由于重叠峰部分仅由镝L_α峰和铁K     

Thermal desorption of dysprosium from tungsten microcrystal

Activation energy for thermal desorption of dysprosium from a tungsten microcrystal of about 300 nm diameter was determined by means of the field-emission method. The desorption was detected from the whole W emitter surface in the temperature range 1490-1665 K for dysprosium average coverage θ < 0.06 monolayer. The average activation energy was determined to be 4.09 ± 0.06 eV/atom and the frequency factor to be about 10¹¹ s⁻¹. The energy may mainly concern the desorption from the atomically rough regions of the microcrystal.     

多通道软X射线Dante谱仪标定及实验

介绍了用于阳加速器上Z箍缩内爆实验诊断的Dante谱仪的结构和通道配置,详细讨论了X射线二极管、掠入射平面反射镜和滤片等主要元器件的标定结果,分析了标定结果与理论计算发生偏差的原因,给出了喷气Z箍缩等离子体辐射的测量结果,X光辐射功率30～40 GW,能量约0.8 kJ,并与闪烁体光电管测量结果进行了比较,差异约20%。     

Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

The steady state surfaces of ion bombarded 3C-, 4H- and 6H-SiC samples were studied by means of reflected electron energy loss spectroscopy (REELS). The REELS exhibit a well-defined loss peak in the region of about 20 eV. The position of the maximum of the loss peak depends on the bombarding ion energy (decreasing with increasing ion energy), and on the primary electron beam energy (increasing with increasing primary energy). This behavior can be explained if we suppose that the plasmon energy in the altered layer (produced by ion bombardment) is different from that of the unaltered bulk. In this case the measured loss peak is the sum of two overlapping plasmon peaks. With modeling the system as a homogeneous altered layer and a homogeneous unaltered substrate the plasmon energy in the altered layer was derived to be 19.8 eV. The large change of the plasmon energy with respect to the bulk value of 23 eV is explained by a thin low density overlayer on the surface of the sample produced by the ion bombardment.     

Effect of surface temperature on the sorption of hydrogen by Pd(111)

Temperature programmed desorption (TPD) subsequent to various hydrogen exposure conditions indicates the formation of chemisorption, solid solution, and hydride phases of hydrogen in the near surface region of Pd(111). Variation of the sample exposure temperature (T_e) between 80 and 300 K has a strong effect on the subsequent TPD spectra. At T_e = 80 K a single desorption peak, β, appears at 310 K. Coverage variation of the β peak is consistent with second-order recombinative desorption of chemisorbed hydrogen. For T_e between 90 and 140 K a slight enhancement of the β peak occurs and a new peak, α, appears initially near 170 K. It does not saturate, exhibits near-zeroth-order desorption kinetics, and is assigned to the decomposition of a near surface palladium hydride phase. Population of the α peak is thermally activated with a maximum at T_e ≈ 115 K. For T_e, greater than 140 K, α disappears while the total amount of absorbed hydrogen increases significantly. At these temperatures, the concentration of absorbed hydrogen decreases significantly if the sample is held in vacuo at T_e after completion of the hydrogen exposure. At all exposure temperatures there is also a broad desorption feature near 800 K which is enhanced by higher T_e and is associated with hydrogen in solid solution.     

Electron beam induced modification of poly(ethylene terephthalate) films

Electron beam processing of poly(ethylene terephthalate) (PET) films is found to promote significant changes in the melting heat, intrinsic viscosity and polymer film-liquid (water, isooctane and toluene) boundary surface tension. These properties are featured with several maximums depending on the absorbed dose and correlating with the modification of PET surface functionality. Studies using adsorption of acid-base indicators and IR-spectroscopy revealed that the increase of PET surface hydrophilicity is determined by the oxidation of methylene and methyne groups. Electron beam treatment of PET films on the surface of N-vinylpyrrolidone aqueous solution provided graft copolymerization with this comonomer at optimum process parameters (energy 700 keV, current 1 mA, absorbed dose 50 kGy).     

Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)

Ultraviolet photoemission spectroscopy with hv < 12 eV has been used to study O₂, CO, and H₂ adsorption on the cleaved GaAs(110) face. It was found that O₂ exposures above 10⁵ L(1LM = 10^?6 Torr sec) were required to produce changes in the energy distribution curves. At O₂ exposures of 10⁶ L on p-type and 10⁸ L on n-type an oxide peak is observed in the EDC's located 4 eV below the valence band maximum. On p-type GaAs, O₂ exposures cause the Fermi level at the surface to move up to a point 0.5 eV above the valence band maximum, while on n-type GaAs O₂ exposures do not remove the Fermi level pinning caused by empty surface states on the clean GaAs. CO was found to stick to GaAs, but to desorb over a period of hours, and not to change the surface Fermi level position. H₂ did not affect the EDC's, but atomic H lowered the electron affinity and raised the surface position of the Fermi level on p-type GaAs. A correlation is found in which gases which stick to the GaAs cause an upward movement of the Fermi level at the surface on p-type GaAs, while gases which stick only temporarily do not change the surface position of the Fermi level.     

Hydrogen chemisorption on silicon (100) 2 × 1

Changes in the valence band density of states (DOS) of a (100) silicon surface that accompany he chemisorption of atomic hydrogen onto that surface are deduced from a study of the changes in the L_2,3VV Auger lineshape. Complementary changes in the conduction band DOS are inferred from changes in L_2,3VV-core-level characteristic loss spectra (CLS). The chemisorbed hydrogen layer is identified as the dihydride phase from low energy electron diffraction measurements. Upon hydrogen adsorption the DOS at the top of the valence band decreases and new energy levels associated with the Si-H bonds appear lower in the band. Assuming that the Auger signal from the hydrogen covered sample consists of a superposition of a signal from silicon atoms bonded to hydrogen in the dihydride layer and an elemental-Si signal from the substrate, a N(E) difference spectrum with features due only to the dihydride is obtained by subtracting the background corrected, loss deconvoluted L_2,3VV signal for a clean (100)Si surface rom the corresponding signal for the hydrogen covered surface. Comparisons of the energy position of the major peak in this difference spectrum with that of the main peak in a gas phase silane Si-L_2,3VV spectrum, and of the corresponding Auger energy calculated empirically, indicate a hole—hole interaction energy of ~8 eV for the two-hole final state in the gaseous system and zero for the dihydride surface system. Hydrogen induced changes in the conduction band DOS are less apparent than those of the valence band DOS with only the possibility of a decrease in the DOS at the bottom of the conduction band being inferred from the CLS measurements. Electron stimulated desorption of hydrogen from the dihydride layer is adduced from changes in the Auger lineshape under electron beam irradiation of the surface. Hydrogen induced changes in the near-elastic electron energy loss spectra (ELS) are also reported and compared with previously published ELS results.     

Interpretation of photoemission from Na (1 1 0)

A self-consistent calculation of the electronic structure of the Na (1 1 0) surface, using an embedding method to treat the semi-infinite system, gives a prominent surface resonance peak at 0.75 eV above the Fermi energy. The tail of this resonance extends below E_F at the surface, and it is suggested that surface photoemission from this tail is responsible for the peak in the photocurrent at E_F observed experimentally, A photoemission calculation, with a non-self-consistent surface potential, reproduces the enhancement of the peak as a direct transition moves through it.     

利用窄刻槽金属光栅实现石墨烯双通道吸收增强

构建基底/窄刻槽金属光栅/覆盖层/石墨烯结构,利用金属光栅激发的表面等离子体激元共振和窄光栅刻槽支持的法布里-珀罗共振,在可见光波段实现单层石墨烯的双通道吸收增强,并结合简化模型估算出双吸收通道所在位置.在波长462和768 nm处,石墨烯的光吸收效率分别为35.6%和40.1%,相比石墨烯本征光吸收率的增强均超过15.5倍.进一步研究发现由于短波处吸收增强源于金属光栅的表面等离子体激元共振,其吸收特性受覆盖层厚度、刻槽深度和宽度变化的影响较小;而由于长波处吸收增强源于窄刻槽中的法布里-珀罗共振,因此呈现出良好的角度不敏感吸收特性.     

Simulation of sputtering and desorption of gold nanoclusters under bombardment with 180-eV/atom Au400 nanoclusters using the classical molecular dynamics method

Computer simulation of the interaction of an Au₄₀₀ nanocluster (the total energy E = 72 keV) with free spherical Au _N nanoclusters (6 and 12 nm in diameter) and Au₆₀₅₁ clusters deposited on the (111) surface of an Al substrate is performed by means of the classical molecular dynamics method. The distributions of the absorbed energy (ε) converted to one atom of the bombarded nanocluster and the sputtering yield are analyzed. It has been ascertained that the most probable values are either the small (ε ? ε_max = E/N) or the maximum possible (ε ～ ε_max) values of absorbed energy. The total sputtering yield and the absorbed energy decrease with increasing impact parameter. It has been demonstrated that, with a probability of ～10%, a direct impact can lead to ejection of the entire bombarded nanocluster from the substrate. This event occurs in the case where an incident cluster initiates the secondary emission of target-cluster atoms mainly in the direction of the substrate. As a result, the nonsputtered part of the target cluster acquires the momentum in the opposite direction. This recoil effect can be regarded as one of the possible mechanisms by which nanoclusters deposited on substrate surfaces desorb under ion and cluster bombardment.     

激光聚焦位置对K9光学玻璃损伤的影响

 利用脉宽为10 ns、波长为1 064 nm的激光脉冲聚焦通过K9玻璃的方法,研究了玻璃的损伤形貌与高强度纳秒激光脉冲聚焦位置的关系。当激光脉冲聚焦在样品中心时,吸收能量随着入射能量的增加呈线性增长,玻璃的破坏范围不断扩大;当激光脉冲聚焦在样品表面时,吸收能量随着入射能量的增加呈先增长而后减小最终趋于平稳,玻璃表面的破坏范围也是先增大而后减小趋于平稳,这主要是由于空气被击穿而吸收大量能量引起的。     

Interpretation of apparent chemical shifts in XP spectra from oxide—GaP interfaces

The cause of the apparent chemical shifts (ACS's) of XPS peaks between oxide and substrate GaP has been studied. The ACS's for Ga 3d, P 2p and GaLMM change significantly depending on the conditions of oxidation. The changes in the ACS's are considered in terms of not only the chemical structure of the oxide, but also other possible causes, such as charging effects, electric dipole moment, extra-atomic relaxation energy, Fermi-level pinning position, etc. The change of the Fermi-level position at the surface of substrate GaP is revealed to be a dominant factor causing the changes in the ACS's.     

Electron energy spectrum and the specific features of the optical absorption of solid solutions of magnesium,aluminum, and boron oxides

A calculation scheme based on density functional theory, generalized for the case of periodic structures, is used to calculate the electron energy spectrum of binary and ternary oxides of magnesium, aluminum, and boron with MgB _x Al_2?x O₄ spinel structure. The dependences of the electron energy and geometric characteristics of the studied structures on the degree of substitution x are examined. It is shown that, by changing this parameter (i.e., the composition of the ternary oxide), it is possible to adjust the bandgap width and the position of the chemical potential for boron-magnesium-aluminum spinel. The dependence of the imaginary part of the relative permittivity on the energy of absorbed photons is obtained and analyzed.     

Internal electric field distribution within a micro-cylinder-shaped particle suspended in an absorbing gaseous medium

The present study is concerned with photophoresis of a microsized long cylinder-shaped particle suspended in an absorbing gas medium. To facilitate the analysis, an infinite cylinder subjected to an intensive light beam is considered as the physical model. The electromagnetic energy can be absorbed by the particle and turned into thermal energy heating surface unevenly, which results in a net momentum transfer between gas molecules and the particle to drive particle in photophoretic motion. Effects of the governing parameters on the absorbed energy distribution in the cylindrical particle are investigated. The results demonstrate that increasing either the radius or absorptivity of the cylinder enhances the energy absorbed on the illuminated side and tends to generate positive photophoresis; while an increase in the refractivity of the particle tends to enhance the internal electric field intensity and shift the absorption peak on the shaded side toward the particle center. Increase in medium absorptivity reduces the energy reaching at the particle, which significantly degrades the level of energy absorption and therefore weakens the photophoretic mobility of the particle. It is also found that, at the same conditions, the source function peaks in long cylinder-shaped particles are generally lower than those in spheres due to the weaker light refraction of the cylindrical shape.     

Nano-structural characteristics and optical properties of silver chiral nano-flower sculptured thin films

Silver chiral nano-flowers with 3-, 4- and 5-fold symmetry were produced using oblique angle deposition method in conjunction with the rotation of sample holder with different speeds at different sectors of each revolution corresponding to symmetry order of the acquired nano-flower. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), were employed to obtain morphology and nano-structure of the films. Optical characteristics of silver chiral nano-flower thin films were obtained using single beam spectrophotometer with both s- and p-polarization incident light at 30° and 70° incidence angles and at different azimuthal angles (φ). Optical spectra showed both TM (TDM (transverse dipole mode) and TQM (transverse quadruple mode)) and LM (longitudinal mode) Plasmon resonance peaks. For 3- and 4-fold symmetry chiral nano-flowers the s-polarization extinction spectra obtained at different azimuthal angles did not show significant change in the Plasmon peak position while 5-fold symmetry chiral nano-flower showed a completely different behavior, which may be the result of increased surface anisotropy, so when the φ angle is changed the s-polarization response from the surface can change more significantly than that for lower symmetries. In general, for 3-, 4- and 5-fold symmetry chiral nano-flowers a sharp peak at lower wavelengths (<450 nm) is observed in the s-polarization spectra, while in addition to this peak a broad peak at longer wavelengths (i.e., LM) observed in the p-polarization spectra, which is more dominant for 70° incidence angle.     

Die differentiellen Anregungsfunktionen dern+2-Zustände von Helium

Energy and angular dependences for the electron impact excitation of the Helium 2³ S, 2¹ S, 2³ P, and 2¹ P states have been measured using monochromatic (0.05 eV) electrons in the energy range from 19 to 23 eV and for scattering angles ranging from 0 to 110°. The structures near the 2³ S-threshold have been analyzed in terms of resonant and non resonant i.e. direct scattering phase shifts. The first peak in this excitation function at 19.95 eV is mostly due to the rapid change with collision energy of the directs-wave phase of the inelastic scattering, which in turn is a consequence of the existence of the 2² S-resonance at 19.3 eV. The energy position and behaviour with collision energy of the first peak at 20.7 eV in the 2¹ S-channel is in agreement with the predictions for the existence of a virtual resonance state ofBurke et al. A term sceme of the He^? resonances with assignments of configurations is presented.     

强流二极管阳极电子束时域能量沉积特性模拟

以强流脉冲电子束为研究对象,提出了一种基于离散时间、限定靶面位置,通过测量靶面不同时刻入射角分布,利用蒙卡程序计算得到电子束的能量(r, z)二维分布沉积值的方法。给出了典型弱箍缩平板二极管(电压峰值700 kV、阻抗7 Ω)阳极靶面不同位置时域的能量沉积值,分析了(0, 0°),(25 mm, 135°),(36 mm, 270°)三个位置纵切剖面的能量沉积特性,结果表明:在各个时间段内电子束入射能量确定的情况下,能量沉积特性与入射角呈现相关性,仿真结果与实验结果符合较好,偏差均小于10%;距阳极靶心25 mm以外的靶面位置,受束流箍缩影响,入射角分布变化较大;当入射角较小时(小于40°),强流电子束能量沉积峰值深度约0.2 mm;当入射角超过40°时,能量沉积峰值深度减小到0.1 mm左右;而阳极靶心位置附近,受束流箍缩影响较小,这些位置的能量沉积特性更接近于小角度入射角情形。     

Contact charge density in metallic dysprosium

The contact conduction electron density in metallic dysprosium has been calculated following the APW formalism and taking into account the effects of correlation and spin-polarization. A comparison of this density with that obtained from the Mössbauer isomer shift measurement has been made. An estimate of Δ〈r ²〉, the change in mean square nuclear charge radius between the two levels involved in theγ transition, has been made and compared with those obtained by other workers.