Electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride

Electronic structures and optical properties of single-layer In_1-xGa_xN are studied by employing Heyd-Scuseria-Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of single-layer In_1-xGa_xN are calculated, and the band gap ranges from 1.8 eV to 3.8 eV as the ratio x changes, illustrating the potential for the tunability of band gap values via Ga doped. We also have investigated optical properties of single-layer In_1-xGa_xN such as dielectric function, refractive index and absorption coefficient, the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases. Furthermore, the optical properties of single-layer In_1-xGa_xN are analyzed based on the band structures and DOS analysis. Such unique optical properties have profound application in nanoelectronics and optical devices.     

Electron energy structure and X-ray spectra of wide-band GaN, AlN, and AlN-GaN semiconductors

The electronic energy structure of GaN, AlN, and AlGaN crystals with the wurzite structure is calculated by the local coherent potential method using the cluster version of the MT-approximation within the framework of the multiple scattering theory. The calculated densities of electron states are compared with XPS spectra of gallium and aluminum, AlL _{II, III} XES, and also with K-spectra of gallium and AlL _{II, III} XAFS absorption. The comparison of the electronic structure of Al_xGa_1?x N crystals and binary GaN and AlN and the interpretation of their features are performed. The concentration dependence of the width of the upper subband of the valence band and the band gap in Al_xGa_1?x N (x = 0, 0.25, 0.5, 0.75, 1) crystals on the content of aluminum is studied and its non-linear character shown.     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

Nanocrystalline Zn1−x Ag x O y thin films evolved through electrodeposition for photoelectrochemical splitting of water

Nanocrystalline Zn_1???x Ag _x O _y (x?=?10^??3???50?×?10^??3) thin films evolved through electrodeposition over ITO substrate have been investigated for photoelectrochemical splitting of water. Samples were characterized by XRD, EDX, SEM, AFM, UV–visible optical absorption, and Mössbauer spectral analysis. Ag incorporation led to a decrease in the band gap energy and alterations in microstructural and semiconductor properties. Raising Ag concentration in samples up to 1 % at. caused a significant reduction in density and electrical resistivity, enhanced absorption along with red shift to the band gap energy, anodic shift in flat band potential, and increased charge carrier density, enabling 1 % at. Ag-incorporated ZnO films most photosensitive by yielding highest short-circuit current, photocurrent density, and applied bias photon to current efficiency. Plausible reasons have been offered.     

First principle study of hydrogen storage on the graphene-like aluminum nitride nanosheet

Employing density functional calculations including an empirical dispersion term, we investigated the hydrogenation of an aluminum nitride nanosheet (h-AlN) with atomic and molecular hydrogen. It was found that atomic H prefers to be adsorbed on an N atom rather than Al, releasing energy of 21.1 kcal/mol. The HOMO/LUMO energy gap of the sheet is dramatically reduced from 107.9 to 44.5 kcal/mol, upon the adsorption of one hydrogen atom. The adsorption of atomic H on the h-AlN presents properties which are promising for nanoelectronic applications. The molecular H₂ was found to be adsorbed collinearly on an N atom and dissociated to two H atoms on Al–N bond. Calculated barrier and adsorption energies for this dissociation process are about +18.9 and ?1.9 kcal/mol. We predict that each nitrogen atom in an AlN sheet can adsorb two hydrogen molecules on opposite sides of the sheet, and thus the gravimetric density for hydrogen storage on AlN sheet is evaluated to be about 8.9 wt%.     

First-principles calculations of Cd-doped ZnO thin films deposited by pulse laser deposition

Zn_1−xCd_xO thin films are deposited on quartz substrate by pulse laser deposition. Their band structure and optical properties are experimentally and theoretically investigated. By varying Cd concentration, the band gap of Zn_1−xCd_xO films can be adjusted in a wide range from 3.219 eV for ZnO to 2.197 eV for Zn_0.5Cd_0.5O, which produces different emissions from ultraviolet to Kelly light in their photoluminescence spectra. Simultaneity, the electronic structure and band gap of Zn_1−xCd_xO are investigated by the density functional theory (DFT) with a combined generalized gradient approximation (GGA) plus Hubbard U approach, which precisely predicts the band-gaps of ZnO and Zn_1−xCd_xO alloys. Both the experimental results and theoretical simulation reveal that with increasing Cd concentration in Zn_1−xCd_xO alloys, their absorption coefficients in visible light range are evidently enhanced. The adjustable photoluminescence emission and enhanced visible light absorption endow Zn_1−xCd_xO alloys potential applications in optoelectronic and photocatalytic fields.     

First principles calculations of electronic structure and magnetic properties of Cr-based magnetic semiconductors Al1−xCrxX (X=N, P, As, Sb)

First principles calculations based on the density functional theory (DFT) within the local spin density approximation are performed to investigate the electronic structure and magnetic properties of Cr-based zinc blende diluted magnetic semiconductors Al_1−xCr_xX (X=N, P, As, Sb) for 0≤x≤0.50.The behaviour of magnetic moment of Al_1−xCr_xX at each Cr site as well as the change in the band gap value due to spin down electrons has been studied by increasing the concentration of Cr atom and through changing X from N to Sb. Furthermore, the role of p-d hybridization is analyzed in the electronic band structure and exchange splitting of d-dominated bands. The interaction strength is stronger in Al_1−xCr_xN and becomes weaker in Al_1−xCr_xSb. The band gap due to the spin down electrons decreases with the increased concentration of Cr in Al_1−xCr_xX, and as one moves down along the isoelectronic series in the group V from N to Sb. Our calculations also verify the half-metallic ferromagnetic character in Cr doped AlX.     

Approaching compositional limits of perovskite – type oxides and oxynitrides by synthesis of Mg0.25Ca0.65Y0.1Ti(O,N)3, Ca1–xYxZr(O,N)3 (0.1 ≤ x ≤ 0.4), and Sr1–xLaxZr(O,N)3 (0.1 ≤ x ≤ 0.4)

Partial substitution of cations and anions in perovskite-type materials is a powerful way to tune the desired properties. The systematic variation of the cations size, the partial exchange of O²⁻ for N³⁻ and their effect on the size of the optical band gap and the thermal stability was investigated here. The anionic substitution resulted in the formation of the orthorhombic perovskite-type oxynitrides Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃, Ca_1-xY_xZr(O,N)₃, and Sr_1–xLa_xZr(O,N)₃. A two-step synthesis protocol was applied: i) (nano-crystalline) oxide precursors were synthesized by a Pechini method followed by ii) ammonolysis in flowing NH₃ at T = 773 K (Ti) and T = 1273 K (Zr), respectively. High-temperature synthesis of such oxide precursors by solid–state reaction generally resulted in phase separation of the different A-site cations. Changes of the crystal structures were investigated by Rietveld refinements of the powder XRD data, thermal stability by DSC/TG measurements in oxygen atmosphere, oxygen and nitrogen contents by O/N analysis using hot gas extraction technique, and optical band gaps by photoluminescence spectroscopy. By moving from Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ via Ca_1–xY_xZr(O,N)₃ to Sr_1–xLa_xZr(O,N)₃, the degree of tilting of the octahedral network is reduced, as observed by an increase in the B–X–B angles caused by the simultaneously increasing effective ionic radius of the A-site cation(s). In general, increasing substitution levels on the A-site (Y³⁺ and La³⁺) are accompanied by an enhanced replacement of O²⁻ by N³⁻. In all three systems, this anionic substitution resulted in a reduction of the optical band gap by approximately 1 eV (Ti) and up to 2.1 eV (Zr) compared to the respective oxides. For Mg_0.25Ca_0.65Y_0.1Ti(O,N)₃ an optical band gap of 2.2 eV was observed, appropriate for a solar water splitting photocatalyst. The Zr-based oxynitrides required a by a factor of 2 higher nitrogen contents to significantly reduce the optical band gap and the measured values of 2.9 eV–3.2 eV are larger compared to the Ti-based oxynitride. Bulk thermal stability was revealed up to T = 881 K. In general, the thermal stability decreased with increasing substitution levels due to an increasing deviation from the ideal anionic composition as demonstrated by O/N analysis.     

Structure and optical properties of [Ba1–xY2x/3](Zr0.25Ti0.75)O3 powders

[Ba_1–xY_2x/3](Zr_0.25Ti_0.75)O₃ powders with different yttrium concentrations (x = 0, 0.025 and 0.05) were prepared by solid state reaction. These powders were analyzed by X-ray diffraction (XRD), Fourier transform Raman scattering (FT-RS), Fourier transform infrared (FT-IR) and X-ray absorption near-edge (XANES) spectroscopies. The optical properties were investigated by means of ultraviolet–visible (UV–vis) absorption spectroscopy and photoluminescence (PL) measurements. Even with the addition of yttrium, the XRD patterns revealed that all powders crystallize in a perovskite-type cubic structure. FT-RS and FT-IR spectra indicated that the presence of [YO₆] clusters is able to change the interaction forces between the O–Ti–O and O–Zr–O bonds. XANES spectra were used to obtain information on the off-center Ti displacements or distortion effects on the [TiO₆] clusters. The different optical band gap values estimated from UV–vis spectra suggested the existence of intermediary energy levels (shallow or deep holes) within the band gap. The PL measurements carried out with a 350 nm wavelength at room temperature showed that all powders present typical broad band emissions in the blue region.     

The Influence of Dopant Concentration on Optical-Electrical Features of Quantum Dot-Sensitized Solar Cell

In this study, TiO₂/CdS/Cd_xCu_1−xSe, TiO₂/CdS/Cd_xMn_1−xSe, and TiO₂/CdS/Cd_xAg_2−2xSe thin films were synthesized by chemical bath deposition for the fabrication of photoanode in quantum-dot-sensitized solar cells. As a result, the structural properties of the thin films have been studied by X-ray diffraction, which confirmed the zinc Blende structure in the samples. The optical films were researched by their experimental absorption spectra with different doping concentrations. Those results were combined with the Tauc correlation to estimate the absorption density, the band gap energy, valence band and conduction band positions, steepness parameter, and electron–phonon interaction. Furthermore, the electrical features, electrochemical impedance spectrum and photocurrent density curves were carried out. The result was used to explain the enhancing performance efficiency.     

Lu掺杂AlN的电子结构和光学性质的第一性原理研究

为了探索AlN在光电器件中的潜在应用,采用第一性原理计算了不同Lu掺杂浓度(以原子分数x表示)的AlN(Al_1-xLu_xN)的电子结构和光学性质。研究结果表明,Al_1-xLu_xN的超胞体积随着Lu掺杂浓度的增加而增加,而带隙则相反。Al_1-xLu_xN的静态介电常数在低能区随掺杂浓度的提高而提高,随后逐渐趋向一致。随着Lu掺杂浓度的增加,反射率和吸收系数的峰值强度降低,峰值向较低能量方向移动。Al_1-xLu_xN的能量损失光谱表现出明显的等离子体振荡特性,且峰值低于本征AlN。Al_1-xLu_xN的光电导率在低能区随能量的增加而急剧增加。     

Lu掺杂AlN的电子结构和光学性质的第一性原理研究

为了探索 AlN在光电器件中的潜在应用,采用第一性原理计算了不同 Lu掺杂浓度(以原子分数 x表示)的 AlN(Al_1-xLu_xN)的电子结构和光学性质。研究结果表明,Al_1-xLu_xN的超胞体积随着Lu掺杂浓度的增加而增加,而带隙则相反。Al_1-xLu_xN的静态介电常数在低能区随掺杂浓度的提高而提高,随后逐渐趋向一致。随着Lu掺杂浓度的增加,反射率和吸收系数的峰值强度降低,峰值向较低能量方向移动。Al_1-xLu_xN的能量损失光谱表现出明显的等离子体振荡特性,且峰值低于本征AlN。Al_1-xLu_xN的光电导率在低能区随能量的增加而急剧增加。     

Optical properties of a-Se90In10−x Snx chalcogenide thin films before and after gamma irradiation

Amorphous Se₉₀In_10?xSn_x (x=2, 4, 6, and 8) thin films of thickness 1000 Å were prepared on glass substrates by the thermal evaporation technique. Optical parameters of the films were investigated, in the wavelength range 400–700 nm, before and after irradiation by 4, 8, and 12 kGy doses of γ-ray. The optical absorption coefficient α for as-deposited and gamma irradiated films was calculated from the reflectance R and transmittance T measurements, which were recorded at room temperature. From the knowledge of α, at different wavelengths, the optical band gap E_g was calculated for all compositions of Se–In–Sn thin films before and after gamma irradiation. Results indicate that allowed indirect optical transition is predominated in as-deposited and irradiated films. Besides, it is found that the band gap decreases with increasing Sn concentration and this is attributed to the corresponding decrease in the average single bond energy of the films. The band gap, after irradiation at different doses of γ-ray, was found to decrease for all compositions of the studied films. This post-irradiation decrease in the band gap was interpreted in terms of a bond distribution model.     

Metallofullerene photoswitches driven by photoinduced fullerene-to-metal electron transfer

We report on the discovery and detailed exploration of the unconventional photo-switching mechanism in metallofullerenes, in which the energy of the photon absorbed by the carbon cage π-system is transformed to mechanical motion of the endohedral cluster accompanied by accumulation of spin density on the metal atoms. Comprehensive photophysical and electron paramagnetic resonance (EPR) studies augmented by theoretical modelling are performed to address the phenomenon of the light-induced photo-switching and triplet state spin dynamics in a series of Y_xSc_3−xN@C₈₀ (x = 0–3) nitride clusterfullerenes. Variable temperature and time-resolved photoluminescence studies revealed a strong dependence of their photophysical properties on the number of Sc atoms in the cluster. All molecules in the series exhibit temperature-dependent luminescence assigned to the near-infrared thermally-activated delayed fluorescence (TADF) and phosphorescence. The emission wavelengths and Stokes shift increase systematically with the number of Sc atoms in the endohedral cluster, whereas the triplet state lifetime and S₁–T₁ gap decrease in this row. For Sc₃N@C₈₀, we also applied photoelectron spectroscopy to obtain the triplet state energy as well as the electron affinity. Spin distribution and dynamics in the triplet states are then studied by light-induced pulsed EPR and ENDOR spectroscopies. The spin–lattice relaxation times and triplet state lifetimes are determined from the temporal evolution of the electron spin echo after the laser pulse. Well resolved ENDOR spectra of triplets with a rich structure caused by the hyperfine and quadrupolar interactions with ¹⁴N, ⁴⁵Sc, and ⁸⁹Y nuclear spins are obtained. The systematic increase of the metal contribution to the triplet spin density from Y₃N to Sc₃N found in the ENDOR study points to a substantial fullerene-to-metal charge transfer in the excited state. These experimental results are rationalized with the help of ground-state and time-dependent DFT calculations, which revealed a substantial variation of the endohedral cluster position in the photoexcited states driven by the predisposition of Sc atoms to maximize their spin population.

Photoexcitation mechanism of Y_xSc_3−xN@C₈₀ metallofullerenes is studied by variable-temperature photoluminescence, advanced EPR techniques, and DFT calculations, revealing photoinduced rotation of the endohedral cluster.     

Structural,elastic, electronic and optical properties of the cubic perovskite BiAlO3

We report first-principles study of structural, elastic, electronic and optical properties of the cubic perovskite-type BiAlO₃ using the pseudopotential plane waves method within the local density approximation. The calculated structural parameters are in good agreement with previous calculations. The elastic constants and their pressure dependence are calculated using the static finite strain technique. A linear pressure dependence of the elastic stiffness is found. Band structures show that BiAlO₃ has an indirect band gap between the occupied O 2p and unoccupied Bi 6p states. The density of states and Mulliken charge populations analysis shows that Al–O and Bi–O bonds are covalent with a strong hybridization. The variation of the gap versus pressure is well fitted to a quadratic function and an indirect to direct band gap transition occurs at 15.5 GPa. Furthermore, in order to understand the optical properties of BiAlO₃, the dielectric function, absorption coefficient, refractive index, extinction coefficient, optical reflectivity and electron energy loss are calculated for radiation up to 30 eV.     

Electronic and Chemical Characterization of Aluminum–Nitrogen (AlN) Substituted Fullerenes: C58AlN to C24Al12N12

Density functional theory calculations (B3LYP/6-311G*) are applied to devise a series of AlN-substituted C₆₀ fullerenes, avoiding weak homonuclear Al–Al and N–N bonds. The substitutional structures, energy gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, ionization potentials, binding energies, as well as dipole moments have been systematically investigated. The band gap (HOMO–LUMO gap) is larger for all the AlN-substituted fullerenes than C₆₀. The properties of heterofullerenes, especially, the HOMO–LUMO strongly depend on the number of AlN units. Natural charge analyses indicate that doping of fullerene with AlN units exerts electronic environment diversity to the cage. High charge transfer on the surfaces of our heterofullerenes provokes more studies on their possible application for hydrogen storage.     

Band‐Edge Electronic Structure of β‐In2S3: The Role of s or p Orbitals of Atoms at Different Lattice Positions

As a promising solar‐energy material, the electronic structure and optical properties of Beta phase indium sulfide (β‐In₂S₃) are still not thoroughly understood. This paper devotes to solve these issues using density functional theory calculations. β‐In₂S₃ is found to be an indirect band gap semiconductor. The roles of its atoms at different lattice positions are not exactly identical because of the unique crystal structure. Additonally, a significant phenomenon of optical anisotropy was observed near the absorption edge. Owing to the low coordination numbers of the In3 and S2 atoms, the corresponding In3‐5s states and S2‐3p states are crucial for the composition of the band‐edge electronic structure, leading to special optical properties and excellent optoelectronic performances.     

Theoretical studies of the band structure and optoelectronic properties of ZnOxS1−x

In the present article, we have revisited the electronic band gap nature of ZnO_xS_1?x (0 ≤ x ≤ 1) with the recently developed modified Becke and Johnson exchange potential and the calculated band gaps are found consistent with the experimental results. We expect that the band gap bowing parameter obtained in the present work will be close to the experimental one. As the optical properties of ZnO_xS_1?x (0 ≤ x ≤ 1) are very important, therefore different optical parameters like dielectric functions, refractive index and reflectivity are also calculated. The results are illustrated in terms of band structures, band gap energy as a function of oxygen composition, total and partial density of states. © 2012 Wiley Periodicals, Inc.     

Research on optical band gap of the novel GeSe2–In2Se3–KI chalcohalide glasses

The glass-forming region of the GeSe₂–In₂Se₃–KI system was reported firstly. The dependence of physical, thermal and optical properties on compositions as formula of (1 ? x)(0.8GeSe₂–0.2In₂Se₃)–xKI (x = 0, 0.1, 0.2, 0.3) chalcohalide glasses was investigated. The allowed direct transition and indirect transition, and Urbach energy of samples were calculated according to the classical Tauc equation. The results show that the glass system has good thermal stability and that there is an obvious blue-shift at the visible absorbing cutting-off edge. When the dissolved amount of KI increased from 0 to 30 mol%, the direct optical band gap and the indirect optical band gap were in the range from 1.617 to 1.893 eV and 1.573 to 1.857 eV. With the decrease of the molar refraction the refractive index decreases, optical band gap and metallization criterion increase. The relationship between energy band gap and metallization criterion was analyzed and the optical properties of chalcohalide glasses were summarized.