Studies of the quantum Hall to quantum Hall insulator transition in InSb-based 2DESs

The temperature dependence of ρ_xx is studied in the vicinity of the quantum Hall to quantum Hall insulator transition (ν=1→0) in InSb/InAlSb based 2DESs. ρ_xx displays a symmetric temperature dependence about the transition with on the QH side and on the insulating side. A plot of 1/T₀ for successive ν displays power-law divergence with 1/T₀∝|ν−ν_c|^−γ,² with γ=2.2±0.3. This critical behavior in addition to the behavior expected of the quantum transport regime confirms that the QH/QHI transition is indeed a good quantum phase transition.     

Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state

The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρ_xx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρ_xx totally disappears when the parallel field component is perpendicular to the Hall bar.     

Resistivity peak values at the transition between fractional quantum hall states

Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between the fractional quantum Hall states (ρ _xx ^max ) are compared with the theoretical predictions. It is found that the majority of the peak values are close to the theoretical values for two-dimensional systems with moderate mobilities. The text was submitted by the author in English.     

Quantum Hall effect in restricted geometries

The confinement of electrons in narrow quasi-two-dimensional conducting channels, modelled with a parabolic well, leads to asymmetric Hall plateaus about complete Landau-level fillings and to saw-toothed oscillations of the dc resistivity _xx as a function of the magnetic field B. The peaks in _xx are displaced to lower B and drastically reduced from their wide-channel values. The peak values of _xx increase with increasing channel width. The corrections to σ_yx for finite channel widths and the response to oscillating electric fields are evaluated.     

Microwave electric field induced spin transitions of AlAs 2D electrons

We present the first direct electron spin resonance (ESR) on a 2D electron gas in a III–V semiconductor. ESR on a high mobility 2D electron gas in a single AlAs quantum well reveals an electronic g-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimal linewidth of 7 Gauss. Both the signal amplitude and its dependence on the position and orientation of the sample in the cavity unambiguously demonstrate that the spin transitions in our experiment are caused by the microwave electric field. We present a model that ascribes the spin transitions to the effective magnetic field acting on the electron spins that arises from (Bychkov–Rashba) spin-orbit interaction and the modulation of the electron wavevector around k_F induced by the microwave electric field.     

Spatial evolution of the generation and relaxation of excited carriers near the breakdown of the quantum Hall effect

We have measured the generation and relaxation of excited carriers along their drift direction near the breakdown of the quantum Hall effect (QHE). The dissipative resistivity ρ_xx(x) at current densities close to the critical value for the QHE breakdown was measured as a function of the distance x from the electron injection at x=0. By injecting “cold” electrons into constrictions at supercritical current levels, the evolution of the breakdown along the drift direction was monitored. After a smooth increase of the resistivity with the drifting distance, an avalanche-like rise towards a saturation value occurs. Drastic changes of the resistivity profiles with the applied current were found in a narrow range around the critical current. The observed behavior is attributed to impurity-assisted tunneling between Landau levels. By injecting hot electrons (excited in a periodic set of constrictions) into a region with subcritical current density, the relaxation process was analyzed. Inelastic relaxation lengths with typical values in the range from 0.3 to 4 μm were found, which agree within 10% with the elastic mean free path determined from the Hall mobility at zero magnetic field. We conclude that the energy relaxation process is triggered by scattering at impurity potentials.     

On the phase boundaries of the integer quantum Hall effect. Part II

It has been shown that the observation of the transitions between the dielectric phase and the integer-quantum-Hall-effect phases with the quantized Hall conductivity σ _xy ^q ≥ 3e ²/h announced in a number of works is unjustified. In these works, the crossing points of the magnetic-field dependence of the diagonal resistivity ρ _xx at different temperatures T and ω_cτ = 1 have been misidentified as the critical points of the phase transitions. In fact, these crossing points are due to the sign change of the derivative dρ _xx /dT owing to the quantum corrections to the conductivity. Here, ω_c = eB/m is the cyclotron frequency, τ is the transport relaxation time, and m is the effective electron mass.     

Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

Spin polarization dependent optical transition rates observed in the integer quantum Hall region

We report on a field-dependent photoluminescence (PL) emission rate for the transitions between band states in modulation-doped CdTe/Cd_1−xMg_xTe single quantum wells in the integer quantum Hall region. The recombination time observed for the magneto-PL spectra varies in concomitance with the integer quantum Hall plateaus. Furthermore, different PL decay times were observed for the two circular polarizations, i.e. for the transitions between the Zeeman split subbands of the Landau levels. We analyzed the data in comparison with the experimentally determined spin polarization of the conduction electrons and the Zeeman splitting of the valence band. Furthermore, we discuss the relevance of the spin polarization of the conduction electrons, the electron–hole exchange interaction and the spin-flip processes of the hole states for the PL decay time.     

Bilayer counterflow transport at filling factor 1 in the strong interacting regime

We review magneto-transport properties of interacting GaAs bilayer hole systems, with very small inter-layer tunneling, in a geometry where equal currents are passed in opposite directions in the two, independently contacted layers (counterflow). In the quantum Hall state at total bilayer filling ν=1 both the longitudinal and Hall counterflow resistances tend to vanish in the limit of zero temperature, suggesting the existence of a superfluid transport mode in the counterflow geometry. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρ_xy) decreases at a given temperature while the counterflow longitudinal resistivity (ρ_xx), which is much larger than ρ_xy, hardly depends on density. Our data suggest that the counterflow dissipation present at any finite temperature is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.     

Spin-dependent resistivity at transitions between integer quantum hall states

The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We discuss possible causes and suggest a new explanation for the spikelike features observed at the edges of quantum Hall minima near Landau level crossings.     

Investigations of the exciton condensate

Recent experiments on quantum Hall bilayers in the vicinity of total filling factor 1 (ν_T=1) have revealed many exciting observations characteristic of a superfluidic exciton condensate. We report on our experimental work involving the ν_T=1 exciton condensate in independently contacted bilayer two-dimensional electron systems. We observe previously reported phenomena as a zero-bias resonant tunneling peak, a quantized Hall drag resistivity, and in counter-flow configuration, the near vanishing of both ρ_xx and ρ_xy resistivity components. At balanced electron densities in the layers, we find for both drag and counter-flow current configurations, thermally activated transport with a monotonic increase of the activation energy for d/ℓ_B<1.65 with activation energies up to 0.4 K. In the imbalanced system the activation energies show a striking asymmetry around the balance point, implying that the gap to charge excitations is considerably different in the separate layers that form the bilayer condensate. This indicates that the measured activation energy is neither the binding energy of the excitons, nor their condensation energy.     

Magneto-intersubband zener tunneling in a wide GaAs quantum well at high filling factors

The dependence of the differential resistance r _xx on the dc current density J _dc in a wide GaAs quantum well with two occupied size quantization subbands has been investigated at the temperature T = 4.2 K in the magnetic fields B < 1 T. A peak, whose position is given by the relation 2R _c eE _H = ħω_c/2, where R _c is the cyclotron radius, E _H is the Hall electric field, and ω_c is the cyclotron frequency, has been observed in the r _xx (J _dc) curves at high filling factors. The experimental results are attributed to Zener tunneling of electrons between the Landau levels of different subbands.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Fractional quantum Hall effect at a suppressed energy gap

In the fractional quantum Hall effect regime, the diagonal (ρ_xx) and Hall (ρ_xy) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/Al_xGa_1−x As heterojunctions are measured together with the capacitance between 2DES and the gate. The 1/3-and 2/3-fractional quantum Hall effects are observed at rather low magnetic fields where the corresponding fractional minima in the thermodynamic density of the states have already disappeared, thus, implying the suppression of the quasiparticle energy gaps. The text was submitted by the authors in English.     

Zener tunneling between Landau levels in a double quantum well at high filling factors

Differential resistance r _xx in a double GaAs quantum well with two occupied size-quantization subbands has been studied at a temperature of 4.2 K in magnetic fields B < 2 T. The oscillations of r _xx with a period in the inverse magnetic field determined by the value of a dc bias current I _dc have been discovered in the electron system under investigation at high filling factors in the presence of I _dc. The amplitude of magneto-intersubband oscillations has been shown to increase in the r _xx oscillation maxima, while the oscillation reversal has been observed in the minima. The discovered oscillations have been shown to be due to Zener tunneling of electrons between Landau levels tilted by a Hall electric field. The experimental data are qualitatively explained by the effect of intersubband transitions on the I _dc-dependent component of the electron distribution function.     

Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime

It is established that the Hall effect in Fe/SiO₂ nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρ_h is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρ_xx) resistances ρ_h ∝ ρ _xx ^m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Local investigation of the energy gap within the incompressible strip in the quantum Hall regime

We experimentally study the energy gap within the incompressible strip at local filling factor ν _c = 1 at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field dependence can both be attributed to the spin effects as well as to the change in the energy levels broadening.