Field ion microscopy of cascades of atomic displacements in metals and alloys after various types of irradiation

Experimental results on atomic-spatial investigation of radiative defect formation in surface layers of materials, initiated by neutron bombardment (of Pt, E > 0.1 MeV) and ion implantation (in Cu₃Au: E = 40 keV, F = 10¹⁶ ion/m², j = 10^?3 A/cm²), are considered. Quantitative estimates are obtained for the size, shape, and volume fraction of cascades of atomic displacements formed under various types of irradiation in the surface layers of the materials. It is shown that the average size of radiation clusters after irradiation of platinum to a fast neutron fluence of 6.7 × 10²² m^?2 (E > 0.1 MeV) is about 3.8 nm. The experimentally established average size of a radiation cluster (disordered zone) in the alloy after ion bombardment is 4 × 4 × 1.5 nm.     

Line shape and excitation strength of the first excited state in9Be

The line shape and the excitation strength of the very weak first excited J ^π =1/2⁺ state at E_x=1.684 MeV in Zeitschrift für Physik Zeitschrift für Physik⁹Be has been investigated with high-resolution inelastic electron scattering at E₀=45 and 49 MeV and scattering angles θ=105°, 117°, 129° and 165°, and with high-resolution inelastic proton scattering at E₀=13MeV and θ=15° and 18°. Due to lying just above the neutron threshold the level has a strongly asymmetric line shape which in both experiments can be described consistently with a Breit-Wigner expression modified on the low energy side by the threshold behaviour of the cross section. The resonance energy is E_R=1.684 ± 0.007 MeV and the width T=217± 10 keV in thec.m. system. A single particle potential model calculation reproduces the line shape and the resonance parameters fairly well. In addition, the inelastic electron scattering form factor has been measured. In the range of momentum transfersq =0.24-0.46 fm^?1 it is dominated by a 0p_3/2→ 1s_1/2 particle-hole transition. The transition is mainly longitudinal and of isoscalar nature with a strength of B (E1)↑ =0.027 + 0.002 e² fm², but a small M2 contribution ofB(M2)↑=8.8 ±1.5 μ _N ² fm² has also been detected.     

Sputter damage in Si surface by low energy Ar+ ion bombardment

The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar⁺ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar⁺ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively.     

Vacancy-type defect distributions near argon sputtered Al(100) surface studied by variable-energy positrons and molecular dynamics simulations

A beam of variable-energy positrons, whose back-diffusion probability is measured as a function of positron implantation energy, is applied to studies of depth distribution of sputtering damage in aluminum. The defects are produced by argon ion bombardment of an Al(110) surface in ultra-high vacuum. We have varied the Ar⁺ energy, incident angle and dose, as well as sputtering and annealing temperatures. The extracted defect profiles have typically a narrow peak at the surface with a width of 10–20 A and a broader tail extending down to 50–100 Å. The shape of the defect profile varies only slightly with the sputtering energy and angle. Defect production at less than 1 keV Ar⁺ energies is typically 1–5 vacancies per incident ion. The defect profiles become fluence-independent at about 2 × 10¹⁶ Ar⁺ cm⁻². The defect density at the outer atomic layers saturates at high argon fluences to a few at%, depending on sputtering conditions. The sputtering temperature (below or above the vacancy migration stage at 250 K) has little effect on vacancy profiles. Defects anneal out gradually between 100 °C and 400 °C. Sputtering damage was also evaluated with the molecular dynamics technique. The shape and depth scale of the simulated collision cascades are in agreement with the experimentally extracted quantities.     

Modelling the directional and energy dependence of 5–10 keV Ar+ ion-induced secondary electron yields from Cu crystals

The primary ion directional effects observed in secondary electron yields induced by ion bombardment [5 keV Ar⁺ → Cu(100)] are simulated using a semi-empirical molecular dynamics model. The directional effects are presumed to arise from inelastic energy transfers that take place in close binary atomic encounters. The latter are estimated using the Oen-Robinson model, in combination with a critical apsidal distance (R_c). The connection between the measured kinetic electron emission (KEE) yields (γ_KEE) and the predicted inelastic energy loss in a binary atomic collision (ΔE_i) is established through a semi-empirical fitting procedure involving R_c and other parameters in the following model: γ_e = γ₀ + γ_KEE = γ₀ + 〈ΔE_i(z)exp(? z/λ)〉, where z is the collision depth. The directional effects are best reproduced by fitting the model to Ar–Cu inelastic collisions for two azimuthal incident directions: R_c is estimated to be 0.47 ± 0.03 Å; the parameter, λ (an effective electron attenuation length), is estimated to be 18 ± 2 Å. The same model also describes the γ_KEE energy dependence for 5–10 keV Ar⁺ normally incident on low-index Cu crystal targets [Phys. Rev. 129 (1963) 2409]. The spatial and temporal distributions of the hard collisions that initiate KEE are discussed on the basis of the model.     

Randomisation of crystal structure within energetic collision cascades revealed by the sputtering of Au single crystals during ion bombardment

The ratio of random to preferential atomic ejection which occurs from the surface of a gold single crystal during ion bombardment has been found to be very sensitive to the ion mass. For instance, in the case of 50 keV Ne⁺ ion bombardment preferential ejection dominates, whereas in the case of 50 keV Au⁺ ion bombardment preferential ejection is only a small fraction of the total. These results are interpreted in terms of a dynamic randomisation of the crystal lattice which occurs during the creation of energetic atomic collision cascades. The disorder occurs so rapidly that a substantial fraction of atoms sputtered from the surface are ejected from an essentially random structure. It is thought that such gross disorder is only a transient phenomenon, and leaves no significant permanent effects, except perhaps for a few clustered defects.     

Multipole mixing ratios of transitions in168Er

Time-integral and time-differentialγ-γ directional correlation measurements were performed for cascades in¹⁶⁸Er populated from the electron-capture decay of¹⁶⁸Tm(87d). The¹⁶⁸Tm source was dissolved in HF acid to minimize extranuclear perturbations. The results of the time-differential experiment for the 448-99.3 keV and 448-198 keV cascades showed agreement with time dependent interaction and gaveλ ₂(1094)=(0.79±0.09) ×10⁷ sec^?1. The attenuation factors for the 80 keV level were determined asG ₂₂ (80)=0.90±0.01 and G₄₄(80)=0.94±0.01. OnlyI=4 spin value for the 1094 keV level is consistent with our measurements. The 632, 731, 741, and 816 keV transitions connecting theK=2⁺ andK = 0⁺ rotational bands were found to be of almost pureE2 character. The 99.3, 198, 547, 720, 830, and 1277 keV transitions are of practically pureE1 multipolarity. The 448 keVMl transition has (0.8 _?0.4 ^+2.0 )%E2 admixture. The results for the 1014?80keV cascade give (23±4)%E3 component in the 1014 keV transition.     

A low-energy sims investigation of the analyzing depth by measuring diffusion coefficients using a nickel deposited copper single crystal

The analyzing depth in a low-energy SIMS measurement has been studied on a nickel deposited (50 Å) copper single crystal by measuring inter-diffusion coefficients at various temperatures. The analyzing depth of this specimen under 0.7 keV, 1.2 μA/cm² Ar⁺ ion bombardment was evaluated to be less than 9 Å, taking into consideration a mean distance of the diffused atoms. Taking account of these results, low-energy SIMS could obtain more accurate and intrinsic depth profiles with a depth resolution of about two or three atomic layers.     

A search for resonant two-step α-exchange in 6Li + 12C scattering

Excitation functions for ¹²C(⁶Li, ⁶Li)¹²C (gs, 4.43 MeV) have been measured at 10 angles (40° ? θ_cm ? 160°) over the energy range 20 MeV < E_lab < 36 MeV. A single anomaly of width Γ ≈ 800 keV is observed at E_lab = 22.8 MeV. The results casts doubts on the resonant two-step α-exchange mechanism suggested to occur in this system.     

Reconstruction of heterogeneous single-channel neutralization kinetics by the method of fast-ion grazing scattering from metal surfaces

A method is suggested for the unambiguous reconstruction of the heterogeneous slow-ion neutralization kinetics near the surface of a conductor. The method is based on the special features of fast ion grazing scattering with above-thermal energies of translational motion along the normal. It is shown that the angular distributions of fast particles reflected from the surface are related to the slow-ion neutralization rate by a simple algebraic expression. The method allows the reconstruction of the coordinate dependence for the neutralization rate and the interaction potentials. Its possibilities are demonstrated by the example of neutralizing fast He⁺ ions (ion energies E₁≈2 keV and glancing angles θ₀≈0.5°–0.8°) scattered from the A1(111) surface.     

The effect of C60 cluster ion beam bombardment in sputter depth profiling of organic-inorganic hybrid multiple thin films

The effects of C₆₀ cluster ion beam bombardment in sputter depth profiling of inorganic-organic hybrid multiple nm thin films were studied. The dependence of SIMS depth profiles on sputter ion species such as 500 eV Cs⁺, 10 keV C₆₀⁺, 20 keV C₆₀²⁺ and 30 keV C₆₀³⁺ was investigated to study the effect of cluster ion bombardment on depth resolution, sputtering yield, damage accumulation, and sampling depth.     

Scattering of low energy Na+ ions from a clean polycrystalline Ag surface

The energy distributions of low energy (E₀ = 0.4–3.2 keV) Na⁺ ions scattered from a clean polycrystalline Ag surface were measured. The angle between the incident beam and the surface was fixed at ψ = 45° while the scattering angle (θ) ranged from 50 to 130°. The cleanliness of the surface during the measurement was maintained by simultaneous deposition of Ag atoms from an effusion source. The obtained distributions considerably differ from the corresponding distributions of noble ions. Firstly, for all measured values of E₀ and θ, an intensive hump is observed in the high energy part of the distribution. In certain cases this hump is transformed into a peak. Secondly, the low energy part of the distribution is very pronounced, especially for higher values of E₀ and θ.     

Radioactive decay of Os191 and Os191m

Beta and gamma spectra of Os¹⁹¹ were studied using a magnetic double-focusing beta-spectrometer and a scintillation spectrometer. The isomeric state Os^191m decays through the 74·4 ± 0·1 keV (E3/M4=50) transition with a half-lifeT _1/2=13·0 ± 0·5 hours. A continuous beta spectrum withE _max=147 ± 3 keV and the gamma transitions 41·83 ± 0·05 keV (E3), 82·5 ± 0·3 keV and 129·4 ± 0·1 keV (70%M1 + 30%E2) were observed in the decay of the ground state of Os¹⁹¹. The conversion coefficient of the last transition was determined as 1·94 ±± — 0·10. Gamma transitions with energies of 47 keV and 185·8 keV were not observed.     

The 19F(p,d)18F reaction studied at Ep = 19.3 MeV

The ¹⁹F(p, d)¹⁸F reaction was used at E_p = 19.3 MeV to study the level properties of ¹⁸F up to 6 MeV excitation energy. Angular distributions were measured over the angular range θ_lab = 10°–70° with an overall resolution of 35 keV. The experimental data were analyzed by DWBA theory to obtain l_n and C²S_l values, which were compared with existent theoretical nuclear structure calculations.     

Ultrasoft X-ray spectroscopy investigation of the model system Si-SiO2

SiO₂ surface films with different thicknesses (ranging from 20 to 630 Å), grown on a crystal silicon substrate, have been investigated by the method of reflection and scattering of ultrashoft X-rays. It is shown on the basis of a simultaneous analysis of the SiL _{2, 3} reflection spectra and the scattering indicatrix that the critical angle θ_c for total external reflection for SiO₂ at λ = 57 Å lies in the range 4.5 °–°. The angular dependence of the thickness of the surface layer that forms the specular reflection is obtained. It is shown that the surface layer, whose thickness corresponds to the penetration depth of the radiation into the material with glancing angle close to the critical value θ_c, plays a large role in the formation of the anomalous scattering peak (Yoneda peak).     

Be9(d,p),(d,t),(d,a)反应研究

本文在E_d=0.1—2.5MeV能量范围内,研究了Be⁹(d,p₀)Be¹⁰(0),Be⁹(d,p₁)Be¹⁰(3.368MeV),Be⁹(d,t₀)Be⁸(0),Be⁹(d,α₀)Li⁷(0)及Be⁹(d,α₁)Li⁷(0.478MeV)诸反应。在E_d=0.150,0.220,0.401,0.706,1.005,1.301,1.484,1.750,2.000,2.250和2.500MeV共十一个能量上分别测量了这五群出射粒子在θ_L=10—155°区间的角分布。在θ_L=135°,E_d=0.1—2.5MeV,在θ_L=95°,E_d=0.1—2.2MeV,和在θ_L=112.5°,E_d=0.5—2.5MeV测量了Be⁹(d,p₀)Be¹⁰的激发函数。在θ_L=135°和112.5°,E_d=1.2MeV,用较厚靶(100—300μg/cm²)测量了Be⁹(d,p₀)Be¹⁰(0)反应的截面绝对值,结果为σ_(p0)(θ_L=135°)=1.60mb/sr,σ_(p0)(θ_L=112.5°)=1.55mb/sr。这样就得到了在此能区内,这五群出射粒子的截面情况。对所得结果进行了一些讨论。     

The structure of a stepped copper (410) surface determined by ion scattering spectroscopy

Ion Scattering Spectroscopy applied in the multiple scattering mode is used to determine the structure of a stepped Cu(410) surface. The energy of singly scattered ions is influenced by the presence of neighbour surface atoms. This effect can be used to determine interatomic distances up to about 10Å, as is shown by the results of 8 keV Ar⁺ and 11 keV Ne⁺ scattered through θ = 50°. The edge-edge distance of the stepped copper surface appears to be in accordance with the results of LEED experiments obtained by other investigators. The experiments show a good agreement with the results of the analytical 3-atom model of Poelsema. The energy of the so-called “plateau collision” appears to depend on the effective plateau length l as measured in the plane of incidence. Lengths l between 15 and 60 Å can be determined with an accuracy of 5 Å. Results are shown for 8 and 12 keV Ar⁺, θ = 40° and 60°, and 8 keV Kr⁺ θ = 40°. The experimental dependence of the energy on lis described correctly by a phenomenological model.     

Cluster projectile ions used for the SIMS analysis of silicon

Comparative studies of the emission of Si _n ⁺ (n = 1–11) cluster ions and impurity-containing polyatomic ions under bombardment of B-doped single crystal silicon with A _m ^? (m = 1–5) cluster ions with an energy of E ₀ = 6–18 keV are carried out. The peculiarities of sputtering an adsorbed-particle layer with cluster ions are revealed. The possibility of determining the depth distribution of adsorbed particles by analyzing the yield of sputtered heteroatomic molecular ions upon bombardment is demonstrated.     

Low energy resonances in21Ne(p,γ)22Na examined with a high energy resolution ion beam

TheE _R=126, 272 and 291 keV resonances in the²¹Ne(p, γ)²²Na reaction have been investigated with a high-energy-resolution ion beam. TheE _R=272 keV resonance was found to consist of two states separated by (888+5) eV, where the lower (higher) energy member is a high-spin (low-spin) state. All four resonances have widths less than a few eV, which is an improvement of nearly two orders of magnitude below previously reported limits. The influence of atomic effects on the determination of the correct value for the resonance energy is examined.     

Resonant Raman Scattering of synchrotron X-rays by xenon: Test of angular and polarization dependence of RRS

Using monochromatized synchrotron radiation with variable photon energyE _i=33.94keV...34.54keV, Resonant Raman Scattering (RRS) by free Xenon atoms (B _1s=34.566keV) was investigated. The measured double-differential RRS cross sections are in excellent agreement with those calculated in the non-relativistic dipole approximation, modified by some relativistic corrections, and including the interference corrections predicted by Tulkki and Åberg. Within the experimental error of 5 % the RRS cross section is found to be independent of the scattering angle and of the polarization of the incident photons.