Morphologies of diblock copolymer thin films before and after crystallization

Spin-coated thin films of about 100nm of low-molecular-weight hydrogenated poly(butadiene-b- ethyleneoxide) (PB_h-PEO) diblock copolymers have been crystallized at various constant temperatures. Crystallization has been observed in real time by light microscopy. Detailed structural information was obtained by atomic force microscopy, mainly enabled by the large viscoelastic contrast between amorphous and crystalline regions. The behavior in thin films is compared to the bulk properties of the polymer. Crystallization started from an annealed microphase separated melt where optical microscopy indicated a lamellar orientation parallel to the substrate. A small difference in the length of the crystallizable block produced significantly different crystallization behavior, both in the bulk and in thin films. For thin films of the shortest diblock copolymer (45% PEO content) and for an undercooling larger than about 10 degrees, crystallization created vertically oriented lamellae. These vertical lamellae could be preferentially aligned over several micrometers when crystallization occurred close to a three-phase contact line. Annealing at temperatures closer to the melting point or keeping the sample at room temperature for several months allowed the formation of a lamellar structure parallel to the substrate. A tentative interpretation based on kinetically caused chain folding and relaxation within the crystalline state, with implications on general aspects of polymer crystallization, is presented. Received 19 March 1999 and Received in final form 14 December 1999     

Elastic interaction between defects in thin and 2D films

Elastic interactions between defects is investigated at the surface of thin layers, a question on which we have given a brief account [P. Peyla et al. Phys. Rev. Lett. 82, 787 (1999)]. Two isotropic defects do not interact in an unlimited medium, regardless of the spatial dimension, a result which can be shown on the basis of the Gauss theorem in electrostatics. Within isotropic elasticity theory, defects interact only (i) if they are, for example, at a surface (or at least if they feel a boundary), or if their action on the material is anisotropic (e.g. they create a non central force distribution, though the material elasticity is isotropic). It is known that two identical isotropic defects on the surface of a semi-infinite material repel each other. The repulsion law behaves as 1/r ³(r = defects separation). We first revisit the Lau-Kohn theory and extend it to anisotropic defects. Anisotropy is found to lead to attraction. We show that in thin films defects may either attract or repel each other depending on the local geometric force distribution caused by the defect. It is shown that the force distribution (or more precisely the forces configuration symmetry) fixes the exponent in the power law 1/r ⁿ (e.g. for a four-fold symmetry n = 4). We discuss the implication of this behaviour in various situations. We treat the interactions in terms of the symmetries associated with the defect. We argue that if the defects are isotropic, then their effective interaction in an unlimited 2D (or a thin film) medium arises from the induced interaction, which behaves as 1/r ⁴ for any defect symmetry. We shall also comment on the contribution to the interaction which arises from flexion of thin films. Received 7 October 2002 Published online 4 June 2003 RID="a" ID="a"e-mail: chaouqi.misbah@ujf-grenoble.fr     

Adsorbate-substrate bonding and the growth of naphthalene thin films on Ag(1 1 1)

The adsorption kinetics, energetics and growth of naphthalene thin films, from submonolayer to about 10 layers, on a Ag(1 1 1) surface at low temperature in a ultrahigh vacuum chamber are examined by using temperature programmed desorption spectroscopy. The first layer adsorption occurs with a desorption energy of 85 ± 5 kJ/mole and results in an interface dipole of 5 ± 1 D, from charge transfer of approximately 0.2 e from naphthalene to Ag. The surface dipole induced inter-adsorbate repulsion causes the lowering of the adsorption energy within the first layer near the saturation coverage so that the second layer deposition begins before the completion of the first layer. The second layer is a metastable phase with desorption energy, 74 ± 3 kJ/mole, smaller than the multilayer desorption energy of 79 ± 5 kJ/mole. Fractional order desorption kinetics were found for both the metastable and the multilayer phases, suggesting desorption from 2-D islanding and 3-D islanding, respectively.     

Electro-optical response due to mixed conduction electrodes, compared to ferroelectric ones, in asymmetric nematic liquid crystal cells

The usual liquid crystal cells show an electro-optical response symmetric to the applied voltage. On the contrary, when mixed conduction films such as tungsten trioxide or vanadium pentoxide are inserted on one side of the cell, the electro-optical response is asymmetric with respect to the applied voltage. Depending on the structural phase of the inserted film the electro-optical response is in phase (transmission ON during the anodic polarization on metal oxide electrode, transmission OFF during the cathodic one) or in opposition of phase (reverse combination). The first case has been explained by the formation of a double charge layer at the interface metal oxide–liquid crystal, because of migration of protons contained in the oxide films. The other case has been found after high-temperature treatments of metal oxides deposited on glass–ITO substrates, and it appears quite similar to the response collected by using films of ferroelectric materials such as lead zirconium titanate (PZT). This fact suggests a possible interpretation in terms of dielectric response, when the mixed conduction films undergo high-temperature treatments. A comparative study of films of WO₃, V₂O₅, and PZT is carried out in this work as a function of the annealing temperature. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Mobility in thin polymer films ranging from local segmental motion, Rouse modes to whole chain motion: A coupling model consideration

Large increases of mobility of local segmental relaxation observed in polymer films as the film thickness is decreased, as evidenced by decreases of the glass temperature, are not found for relaxation mechanisms that have longer length scales including the Rouse relaxation modes and the diffusion of entire polymer chains. We show that the coupling model predictions, when extended to consider polymer thin films, are consistent with a large increase of the mobility of the local segmental motions and the lack of such a change for the Rouse modes and the diffusion of entire polymer chains. There are two effects that can reduce the coupling parameter of the local segmental relaxation in thin films. One is the chain orientation that is induced parallel to the surface when the film thickness h becomes smaller than the end-to-end distance of the chains and the other is a finite-size effect when h is no longer large compared to the cooperative length scale. Extremely thin ( ≈ 1.5 nm) films obtained by intercalating a polymer into layered silicates have thickness significantly less than the cooperative length scale near the bulk polymer glass transition temperature. As a result, the coupling parameter of the local segmental relaxation in such thin films is reduced almost to zero. With this plausible assumption, we show the coupling model can explain quantitatively the large decrease of the local segmental relaxation time found experimentally. Received 1 August 2001 and Received in final form 1 December 2001     

Substrate effect on excimer laser assisted crystal growth in phosphor Ca0.997Pr0.002TiO3 polycrystalline thin films

Ca_0.997Pr_0.002TiO₃ thin films that show strong red luminescence were successfully prepared by means of an excimer laser assisted metal organic deposition process with a KrF laser at a fluence of 100 mJ/cm² at 100 °C. The CPTO films grew on the silica, borosilicate, and indium-tin-oxide coated glasses. The crystallinity of the Ca_0.997Pr_0.002TiO₃ films depended on the substrates; the borosilicate and indium-tin-oxide coated glasses with a large optical absorption of a KrF laser (λ = 248 nm) were effective for the crystallization for the Ca_0.997Pr_0.002TiO₃. In addition, a high thermal conductivity of the indium-tin-oxide coated glass substrate could also improve the crystallinity due to an enhancement of thermal propagation to the film. Oxygen annealing at 500 °C for 6 h successfully eliminated the oxygen vacancy produced by the laser irradiation, and also remarkably improved the PL emission intensity. Thus, we have shown that substrate properties such as an optical absorbance and a thermal conductivity were quite important factors for the crystal growth and the PL emission for the Ca_0.997Pr_0.002TiO₃ in the excimer laser assisted metal organic deposition process.     

Surface and bulk phenomena in the process of GdHx (0.01 < x < 3) formation in thin Gd films: Transition from metal to transparent semiconductor

The aim of this work was to answer the question whether in the process of gadolinium hydride formation the negatively charged hydrogen adspecies arise directly on the surface at some coverage, or a transition from protonic to anionic hydrogen occurs in the bulk. Thin gadolinium films were deposited on glass under UHV conditions and transformed “in situ” into GdH_x (0.01 < x < 3) by introducing H₂ in successive calibrated doses. Work function changes ΔΦ and pressure P were recorded continuously. Knowing the weight of the thin Gd film and the amount of hydrogen consumed, the atomic ratio H/Gd could be determined and correlated with ΔΦ and P at every step of the process. Parallel experiments were performed measuring the resistance and optical transparency of thin gadolinium films deposited under identical conditions during their transition into GdH_x (0.01 < x < 3). It was found that in the process of GdH_x formation, light-reflecting metallic thin Gd film is transferred into transparent trihydride while its resistance increases by several orders of magnitude. At low coverage, positively polarized hydrogen adspecies arise, penetrating quickly into the bulk. When the average H/Gd concentration approaches 1, negatively charged hydrogen adspecies appear directly on the surface, slowly penetrating into the bulk.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.