ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

采用水相法合成核壳结构ZnSe/ZnS 纳米晶,经X射线衍射(XRD)分析和透射电子显微镜(TEM)表征,证实所制备的样品为立方晶型闪锌矿结构ZnSe/ZnS量子点。按照一定的质量比将ZnSe/ZnS 纳米晶和有机聚合物MEH-PPV(poly ) 共掺并将其作为发光层,分别制备单层和多层有机电致发光器件,结构为ITO/MEH-PPV∶ZnSe(ZnS)(50 nm)/Al和 ITO/PEDOT∶PSS(70 nm)/ MEH-PPV∶ZnSe(ZnS)(50 nm)/BCP(15 nm)/Alq₃(12 nm) /LiF(0.5 nm)/Al。实验结果表明,多层发光器件的发光特性与单层器件不同,工作电压的增大使其发光峰发生了明显的蓝移。     

掺杂DCJTB聚合物电化学池（LEC）的发光性质

通过在聚合物电化学池(LEC)发光器件的发光材料MEH-PPV中掺杂红光染料DCJTB,对LEC器件的发光性质进行研究。基于器件结构为ITO/MEH-PPV PEO LiCF3SO3/Al的薄膜LEC器件,其电致发光峰在570nm左右,通过在MEH-PPV与PEO的混合膜中掺杂不同比例的红光染料DCJTB,随着掺杂比例的增加,器件的发光峰由570nm向红光波段移动,通过控制DCJTB的掺杂比例制备了发光峰在570~650nm连续变化的LEC电致发光器件。对其分析认为从LEC主体发光聚合物MEH-PPV到染料DCJTB间发生了良好的能量传递。     

TBPe与MEH-PPV共掺杂的有机电致发光器件的优化研究

采用有机小分子TBPe（2,5,8,11-tetratertbutylperylene）以不同比例掺入MEH-PPV（poly ）作为发光层,研究了TBPe不同掺杂比例对器件性能的影响,进而对发光强度进行优化。对于所制备的ITO/PEDOT：PSS/MEH-PPV/TBPe/Al有机电致发光器件,TBPe的最优蒸镀厚度为0.5 nm,其发光强度相对于标准器件提高了325%。ITO/PEDOT：PSS/MEH-PPV：TBPe/TBPe/Liq/Al有机电致发光器件的最优掺杂比例为MEH-PPV：TBPe=100：30（质量比）,其发光亮度相比于未掺杂器件提高了44%。在上述器件的基础上增加Alq₃层提高电子注入,分别制作了Liq和LiF作为修饰层的ITO/PEDOT：PSS/MEH-PPV：TBPe/TBPe/Alq₃/Liq/Al和ITO/PEDOT：PSS/MEH-PPV：TBPe/TBPe/Alq₃/LiF/Al多层器件,发光亮度分别达到4 162 cd/m²和4 701 cd/m²。所有器件的电致发光波长均为580 nm,为MEH-PPV的发光,TBPe的掺杂对MEH-PPV的发光起到了增强作用。     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.     

Pump-dependent luminescence in the Ag nanoparticles doped by Erbium

A substantial spectral shift of the UV-laser induced luminescence in the Ag nanoparticles (NP) doped by Er³⁺ ions attached to ITO substrates was observed at T = 4.2 K. We have established high energy spectral shift of principal luminescent maxima (from wavelength equal to about 1.45 up to 1.15 μm) with increasing of the pumping nanosecond nitrogen laser power density up to 1.1 GW/cm² operating at λ = 337 nm. With increasing Erbium content with respect to Ag the spectral shift and spectral line broadening increase. It may be caused by specific features of trapping level occupation kinetics on interfaces NP/ITO substrate. The observed process is fully reversible. The luminescence is observed only during excitation by the 337 nm laser pulses and is absent for laser pulses operating at other wavelengths (like excimer laser at 218 nm and nitrogen laser at 371 nm).     

The roles of zinc selenide sandwiched between organic layers and its applications in white light-emitting diodes

In this paper, the roles of zinc selenide (ZnSe) sandwiched between organic layers, i.e. organic/ZnSe/aluminum quinoline (Alq₃), have been studied by varying device structure. A broad band emission was observed from ITO/poly(N-vinylcarbazole)(PVK)(80 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al under electric fields and it combined the emissions from the bulk of PVK, ZnSe and Alq₃, however, emission from only Alq₃ was observed from trilayer device ITO/N,N^′-bis-(1-naphthyl)-N,N^′-diphenyl-1, 1^′-biphenyl-4, 4^′-diamine (NPB) (40 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al. Consequently the luminescence mechanism in the ZnSe layer is suggested to be charge carrier injection and recombination. By thermal co-evaporating Alq₃ and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), we get white light emission with a Commission Internationale de l’E clairage (C.I.E) co-ordinates of (0.32, 0.38) from device ITO/PVK(80 nm)/ZnSe(120 nm)/ Alq₃:DCJTB(0.5 wt% DCJTB)(15 nm)/Al at 15 V and the device performs stably with increasing applied voltages.     

激光烧蚀制备分布反馈式有机激光器件

采用激光烧蚀的方法结合激光全息技术,直接在高分子聚合物MEH-PPV薄膜表面烧蚀光栅结构,制备了分布反馈式有机激光器。这一方法具有工艺简单、光栅参数的可控性和重复性好等优点。器件MEH-PPV的膜厚是400 nm。利用波长为355 nm的Nd-YAG纳秒激光器进行单脉冲烧蚀,获得的光栅周期和光栅高度分别为370 nm和 100 nm。利用飞秒激光放大器作为泵浦源激射DFB激光器件,得到激射阈值约为182 μJ·cm^-2·pulse^-1,光谱的波峰约在609 nm处,半高宽为4.2 nm。通过改变两光束的夹角获得了周期为360, 370, 380, 390 nm的光栅,它们对应的激光波峰分别为602.91, 609.24, 613.26, 619.01 nm。     

Enhanced Efficiency of Polymer： Fullerene Bulk Heterojunction Solar Cells with the Insertion of Thin TiO2 Layer near the LiF/A1 Electrode

The insertion layer of TiO2 between polymer-fullerene blend and LiF/AI electrode is used to enhance the shortcircuit current Isc and fill factor （FF）. The solar cell based on the blend of poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） and C60 with the modifying layer of TiO2 （about 20nm） shows the open- circuit Voc of about 0.62 V, short circuit current Isc of about 2.35 mA/cm^2, filling factor FF of about 0.284, and the power conversion efficiency （PCE） of about 2.4% under monochromatic light （50Onto） photoexcitation of about 17mW/cm^2. Compared to ceils without the TiO2 layer, the power conversion efficiency increases by about 17.5%. Similar effect is also obtained in cells with the undoped MEH-PPV structure of ITO/PEDOT：PASS/MEH- PPV/（TiO2）LiF/AI. The improved solar cell performance can be attributed to enhanced carrier extraction efficiency at the active layer/electrode interfaces when TiO2 is inserted.     

Study of the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) and indium tin oxide in top emission organic light emitting diodes

X-ray photoelectron spectroscopy (XPS) technique have been used to investigate the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) (MEH-PPV) and indium tin oxide (ITO) layer in top emission organic light emitting diodes. A weak but noticeable diffusion of indium into the polymer film was observed. Interactions between the diffused metallic atoms with the polymer resulted in the formation of carbon-metal complexes at the interface region. Compared to the ITO/MEH-PPV interface, the penetration of indium into the polymer layer was less important and may be explained by the surface morphology of the polymer film. It was however, a probable factor for fast degradation of devices using this structure.     

MEH-PPV/ZnO纳米晶无机有机复合电致发光器件的研究

以Ⅱ一Ⅵ族无机半导体ZnO纳米颗粒为电子传输层,MEH-PPV为空穴传输层兼发光层,得到的电致发光器件比单层MEH-PPV器件的发光亮度和效率都明显提高。器件结构为ITO／MEH-PPV／ZnO／Al的电致发光光谱同单层PPV器件的光谱出现了不同,在620nm处出现了一个小的发光峰,应该是ZnO的发光。另外,双层结构器件的启亮电压由单层器件的9V降到了4V左右。由I-V曲线及发光光谱可判断出发光区域应在MEH-PPV／ZnO界面处,并且复合区域可能随着电压的变化而变化。     

Influence of capacitance effect on alternating-current organic light-emitting diodes

The capacitance effect on ITO/poly[2-methoxy-5-[(2′-ethylhexyl)oxy]-p-phenylenevinylene] (MEH-PPV)/Al is studied by impedance spectroscopy technology, and the electroluminescence (EL) mechanism of this device driven by a sinusoidal alternating-current (AC) bias is suggested. By calculating the RC time constant of the device, we find that it is in good agreement with the lag-time between the EL and applied AC bias. Also, the influence of operating frequency on the EL intensity of the device is presented and it is concluded that a low operating frequency is good for a high device performance.     

体异质结有机太阳能电池性能提高的研究

制备了四种不同结构的有机太阳能电池器件,器件1 ITO/LiF/PEDOT∶PSS/MEH-PPV/C₆₀/Al、器件2 ITO/PEDOT∶PSS/MEH-PPV/C₆₀/Al、器件3 ITO/LiF/PEDOT∶PSS/MEH-PPV∶C₆₀/C₆₀/Al和器件4 ITO/PEDOT∶PSS/MEH-PPV∶C₆₀/C₆₀/Al。测量了它们的电流－电压特性,结果显示在ITO和PEDOT∶PSS之间插入一薄层LiF使得器件性能得到较大提高。其器件1的J_SC和FF比器件2的提高了74%和31%; 器件3的J_SC比器件4的提高了约40%。这主要是由于LiF层有效地抑制了空穴向阳极的传输,并且LiF层在ITO和PEDOT:PSS之间形成了良好的界面特性。因此,这种结构上的改进有效地提高了有机太阳能电池的性能。     

30.4 nm Cr/Al/Cr自支撑滤光片的研制

 依据材料的质量吸收系数和波长的关系,选择Cr和Al 设计和制备30.4 nm自支撑滤光片。在制备时以NaCl为脱膜剂,以热蒸发方式蒸镀Al,以电子束蒸发方式蒸镀Cr, 制备了30.4 nm的Cr/Al/Cr自支撑滤光膜,并对滤光片的表面缺陷进行了分析。通过显微镜观察,滤光膜均匀纯净,无明显针孔。Cr/Al/Cr自支撑滤光片在合肥国家同步辐射实验室进行了测量, Cr/Al/Cr厚度为5 nm/500 nm/5 nm和12.5 nm/500 nm/12.5 nm的滤光片在30.4 nm波长处的透过率分别为7.6%和4.6%,透过率曲线和理论计算基本一致。用紫外分光光度计测量得滤光片在200～800 nm波长范围的透过率小于0.02%,满足使用要求。     

新型不对称酞菁的电致发光性质研究

制作了以3种新璎不对称酞菁铜为发光层的电致发光器件并研究了其电致发光性质.3种新型不对称酞菁铜为2(3)-(对叔丁基苯氧基)酞菁铜(1),2(3),9(10),16(17)-三-(对叔丁基苯氧基)酞菁铜(2)和2(3),16(17)-二-(对叔丁基苯氧基)酞菁铜(3).其中以(1)和(3)为发光层的器件结构ITO/NPB(40 nm)/Phthalocynine(Pc)(30 nm)/AlQ(43.8 nm)/LiF(0.5 nm)/Al(120 nm).其中以(2)为发光层的器件结构为:ITO/NPB(30 nm)/Pc(30 nm)/BCP(20 nm)/AlQ(30 nm)/LiF(0.5 nm)/Al(120 nm).以(1),(2)和(3)为发光层与Q带栩关联的发射波长分别出现在869和1 062 nm;1 050和1110 nm;和1 095和1 204 nm.上述发射波长的不同是因为取代基的数目和真空镀膜的分子聚集态不同造成的,所以3种不对称酞菁铜的发射峰值和半峰宽差别较大,而且由此也引起斯托克司位移的不同.     

聚合物发光二极管中的负电容效应

采用交流阻抗谱技术,研究了以共轭聚合物(poly［2-methoxy,5-(2′-ethylhexoxy)-1,4-phenylenevinylene］)(MEH-PPV)为发光层,以带有胺基的聚芴共聚物poly［(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)］ (PF-NR₂)为电子传输层的发光二极管的交流响应特性. 对于结构为ITO/P 关键词： 2')" href="#">PF-NR₂ 聚合物发光二极管 交流阻抗谱 负电容效应     

噻吩基联苯乙烯蓝色发光材料的合成与发光性能

设计并合成了新型含噻吩基团的联苯乙烯类蓝色有机电致发光材料4,4′-双(2-苯基-2-(2-噻吩)乙烯基)-1,1′-联苯(TPVBi),通过红外、核磁共振、元素分析对其结构进行了表征。利用紫外可见吸收光谱、荧光光谱和循环伏安法等研究了其HOMO、LUMO能级及发光性能。TPVBi溶液的荧光发射峰值波长为451nm,薄膜的荧光光谱最大发射波长为464nm。循环伏安测得其氧化峰电位为1.227V。TPVBi的HOMO能级为-5.55eV,LUMO能级为-2.67eV。以TPVBi作为发光层制作了结构为ITO/CuPc(10nm)/NPB(30nm)/TPVBi(35nm)/TPBi(35nm)/Al(100nm)的有机发光二极管器件,并研究了该器件的电致发光性能。该器件在电压为19.5V时,达到最大亮度1782.3cd/m2,在电流密度为15.69mA/cm2时,最大电流效率为1.73cd/A;器件的发光CIE色坐标为x=0.25,y=0.40。     

Improved electrical and optical properties of MEH-PPV light emitting diodes using Ba buffer layer and porphyrin

It has been found that insertion of a thin Ba buffer layer between the Al electrode and the MEH-PPV layer results in a significantly higher current density in ITO/MEH-PPV/Al polymer light-emitting diodes due to a reduction of the potential barrier at the cathode-polymer interface. The photoluminescence is found to increase with the addition of porphyrin-containing platinum as the central atom, showing that some of the triplet excitons decay radiatively as a result of mixing porphyrin.     

Self-phase modulation in polydiacetylene single crystal measured at 720-1064nm

Detailed measurement of spectral broadening in a poly-[2, 4 hexadiyne-1, 6 diol-bis-(p -toluene sulfonate)] (PTS) single crystal owing to self-phase modulation was performed as a function of wavelength by use of a Ti:sapphire laser producing 200-fs pulses at 720-920 nm and a Nd:YAG laser producing 50-ps pulses at 1064 nm. The nonlinear refractive index (n(2)) of PTS at these wavelengths was determined from the measured phase shift. Group-velocity dispersion was estimated and found to have a negligible effect on the observed spectral broadening. The two-photon absorption coefficient (alpha(2)) over this wavelength range was determined from nonlinear transmission measurements. The largest magnitude of n(2) observed at 720 nm was 3.9x10(-5)cm (2)/MW . The results show that the magnitude of n(2) monotonically decreases as wavelength is increased away from resonance, and two-photon absorption does not make a significant contribution to n(2) at off-resonant wavelengths up to 1064 nm.     

Improvement of performance of tetraphenylporphyrin-based red organic light emitting diodes using WO3 and C60 buffer layers

One of the porphyrin derivatives, meso-tetraphenylporphyrin (TPP), has been synthesized and examined as an emitter material (EM) for efficient fluorescent red organic light-emitting diodes (OLEDs). By inserting a tungsten oxide (WO₃) layer into the interface of anode (ITO) and hole transport layer N,N′-Di-[(1-napthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (NPB) and by using fullerene (C₆₀) in contact with a LiF/Al cathode, the performance of devices was markedly improved. The current density–voltage–luminance (J–V–L) characterizations of the samples show that red OLEDs with both WO₃ and C₆₀ as buffer layers have a lower driving voltage and higher luminance compared with the devices without buffer layers. The red OLED with the configuration ITO/WO₃ (3 nm)/NPB (50 nm)/TPP (60 nm)/BPhen (30 nm)/C₆₀ (5 nm)/LiF (0.8 nm)/Al (100 nm) achieved the high luminance of 6359 cd/m² at the low driving voltage of 8 V. At a current density of 20 mA/cm², a pure red emission with CIE coordinates of (0.65; 0.35) is observed for this device. Moreover, a power efficiency of 2.07 lm/W and a current efficiency of 5.17 cd/A at 20 mA/cm² were obtained for the fabricated devices. The study of the energy level diagram of the devices revealed that the improvement in performance of the devices with buffer layers could be attributed to lowering of carrier-injecting barrier and more balanced charge injection and transport properties.     

Enhanced quantum efficiency in polymer electroluminescence devices by inserting an ultrathin PMMA layer

We report an increase of electroluminescence (EL) efficiency by about two times for poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) based polymer light-emitting diodes (PLED) while employing an ultrathin layer of poly(methyl methacrylate) (PMMA) between a hole injection layer, polyethylenedioxythiophenne:polystyrenesulfonate (PEDOT:PSS) and an emitting layer, MEH-PPV. The peak power efficiency of the control device (ITO/MEH-PPV/LiF/Al) was 0.42 lm/W with a current efficiency of 0.66 cd/A. The device with the optimized thickness of PMMA interface layer shows the highest power efficiency of 1.15 lm/W at a current efficiency exceeding 1.83 cd/A. The significant improvement in the device performance is attributed to the decrease of holes injection and the promotion of electrons injection, which cause the balance of the carriers within the emitting layer.