Model of magnetic anisotropy in disordered semimagnetic semiconductors

We propose a model explaining the origin of cubic magnetic anisotropy in disordered semiconductor. We show that the magnetic anisotropy changes with the position of the Fermi energy in the valence band and the level of disorder in the crystal. The method is applied to Pb_1−x−ySn_yMn_xTe and Sn_1−xMn_xTe ferromagnetic semiconductor crystals.     

Theoretical investigation of the conduction and valence band offsets of GaAs1−x Nx/GaAs1−yNy heterointerfaces

Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs_1−xN_x/GaAs_1−yN_y heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs_1−xN_x over layer falls completely inside the band gap of the substrate GaAs_1−yN_y and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs_1−yN_y which is fully inside the band gap of the GaAs_1−xN_x over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs_1−xN_x/GaAs and GaAs_1−xN_x/GaAs_0.98N_0.02 heterointerfaces have been determined.     

Band-gap bowing and p-type doping of (Zn,Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N_O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.     

Principal energy band gaps of the quaternary alloy AlxGa1−xSbyAs1−y

The correlated function expansion (CFE) interpolation procedure was presented to efficiently estimate principal energy band gaps and lattice constants of the quaternary alloy Al_xGa_1−xSb_yAs_1−y over the entire composition variable space. The lattice matching conditions between x and y for the alloy Al_xGa_1−xSb_yAs_1−y substrated to InAs and GaSb were obtained by optimizing the alloy lattice constant to that of the substrates. The corresponding principal band gaps (E(Γ), E(L), and E(X)) were also calculated along the lattice matching condition on each substrate (InAs and GaSb).     

Dependence of electronic properties on nitrogen concentration in GaAs1−xNx dilute alloys

Based on the pseudopotential scheme, the effect of nitrogen concentration on electronic properties of zinc-blende GaAs_1−xN_x alloys has been investigated for small amounts of N. The agreement between our calculated electronic band parameters and the available experimental data is generally reasonable. In agreement with recent experiment, we find that the incorporation of a few percent of N in the material of interest reduces substantially the fundamental band-gap energy and narrows the full valence band width. The electron and heavy hole effective masses are found to decrease rapidly when adding a concentration of nitrogen less than 0.005 in GaAs. This may increase the mobility of electrons and heavy holes providing new opportunities regarding the transport properties. The information derived from the present study shows that GaAs_1−xN_x (0?x?0.05) properties may have an important optoelectronic applications in infrared and mid-infrared spectral regions.     

Theoretical study of the electronic and magnetic properties of Co2Cr1−xVxAl

We have investigated the electronic and magnetic properties of the doped Heusler alloys Co₂Cr_1−xV_xAl(x=0, 0.25, 0.5, 0.75, 1) using first-principles density functional theory within the generalized gradient approximation (GGA) scheme. The calculated results reveal that with increasing V content the lattice parameter slightly increases; both cohesive energy and bulk modulus increase with increasing x. The magnetic moment of the Co(Cr) sites increases with V doping; the total spin moment of these compounds linearly decreases. We also have performed the electronic structure calculations for Co₂Cr_1−xV_xAl with positional disorder of Co-Y(Cr,V)-type and Al-Y(Cr,V)-type. It is found that formation of Al-Y-type disorder in Co₂Cr_1−xV_xAl alloys is more favorable than that of Co-Y-type disorder. Furthermore, we found that Co₂Cr_1−xV_xAl of the L2₁-type structure have a half-metallic character. And the stability of L2₁ structure will enhance, however, the Curie temperature decreases as the V concentration increases. The disorder between Cr(V) and Al does not significantly reduce the spin polarization of the alloys Co₂Cr_1−xV_xAl.     

Effects of excess oxygen content on the hole-carrying CuO2-layers in Tl2(Ba1−xSrx)2Ca2Cu3Oy superconducting oxides

The effects of oxygen doping on the hole-carrying CuO₂-layers in Tl₂(Ba_1−xSr_x)₂Ca₂Cu₃O_y were studied by combined chemical and valence analysis, T_c measurements and neutron diffraction. The highest T_c is characterized by an optimal excess oxygen content, Δy, dichotomizing the under- and over-doped regions for each Sr concentration. While the average Tl valence is close to 3.0 and independent of Δy, the average Cu valence shows a linear dependence with Δy. An increase of the flatness of the CuO₂ plane, characterized by the O(2)-Cu(2)-O(2) bond angle of ∼176°, was observed at the optimal Δy.     

Assessment of electronic properties of InNxSb1−x for long-wavelength infrared detector applications

This work assesses theoretically the potential of dilute nitride alloys of InN_xSb_1−x for long-wavelength IR applications. A 10-band k.p approximation modified to account for conduction/valence band coupling is implemented to extract the bandgap as a function of the nitrogen concentration in the alloy and the temperature. The calculations show the possibility to obtain a band closure at ∼2% of nitrogen for InSbN at 300 K. The absorption coefficient, and its temperature dependence, is then determined using an Elliot-like formalism, predicting stronger absorption properties associated with the enhancement of conduction band effective masses. This enhancement yields over an order of magnitude increase in the non-radiative Auger recombination lifetimes suggesting the potential of InNSb for significantly enhancing detectivity limits and operation temperatures of long-wavelength IR detectors.     

Carbon doping in MgB2: role of boron and carbon px(y) bands

We have studied the changes in the electronic structure and the superconducting transition temperature T_c of Mg(B_1−xC_x)₂ alloys as a function of x with 0≤x≤0.3. Our density-functional-based approach uses the coherent-potential approximation to describe the effects of disorder, the Gaspari-Gyorffy formalism to estimate the electron-phonon matrix elements and the Allen-Dynes equation to calculate T_c in these alloys. We find that the changes in the electronic structure of Mg(B_1−xC_x)₂ alloys, especially near the Fermi energy E_F, come mainly from the outward movement of E_F with increasing x, and the effects of disorder in the B plane are small. In particular, our results show a sharp decline in both B and C p_x(y) states for 0.2≤x≤0.3. Our calculated variation in T_c of Mg(B_1−xC_x)₂ alloys is in qualitative agreement with the experiments.     

Luminescence studies on nitride quaternary alloys double quantum wells

We present theoretical photoluminescence (PL) spectra of undoped and p-doped Al_xIn_1−x−yGa_yN/Al_XIn_1−X−YGa_YN double quantum wells (DQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltonian together with the Poisson equation in a plane wave representation, including exchange-correlation effects within the local density approximation. Strain effects due to the lattice mismatch are also taken into account. We show the calculated PL spectra, analyzing the blue and red-shifts in energy as one varies the spike and the well widths, as well as the acceptor doping concentration. We found a transition between a regime of isolated quantum wells and that of interacting DQWs. Since there are few studies of optical properties of quantum wells based on nitride quaternary alloys, the results reported here will provide guidelines for the interpretation of forthcoming experiments.     

X-ray photoemission and magnetometric studies of valence changes in Ce(Cu1−xNix)4Ga

The compounds Ce(Cu_1−xNi_x)₄Ga crystallize in the hexagonal CaCu₅-type structure for the whole doping range 0≤x≤1. The border compounds CeCu₄Ga and CeNi₄Ga represent a heavy fermion and fluctuating valence systems, respectively. We report on the studies of the valence evolution in Ce(Cu_1−xNi_x)₄Ga employing the X-ray photoemission spectroscopy (XPS) and magnetic susceptibility measurements. The photoemission of the Ce 3d peaks shows a gradual decrease of the occupation of the f states with Ni content. Simultaneously, the hybridization strength and the low temperature magnetic susceptibility are reduced. Within the valence band spectrum a transition from the dominance of the Cu 3d to the dominance of the Ni 3d states is well visible with the traces of the Ce 4f¹ states for up to x=0.5.     

Study on the doping stability and electronic structure of wurtzite Zn1−xCdxO alloys by first-principle calculations

An ab initio calculation based on density functional theory is applied to study the doping stability and electronic structure of wurtzite Zn_1−xCd_xO alloys. It is found that the different alloy configurations of Zn_1−xCd_xO with a given Cd content are possible thermodynamically, but having different band gaps. With increasing Cd content, the formation enthalpy of Zn_1−xCd_xO alloy increases sharply. The Cd-content dependence of the band-gap values can be fitted with a second-order polynomial. The reduction of band gap can be attributed to the contributions of the hybridization of Zn-4s and Cd-5s, the enhancement of p-d repulsion, and the tensile strain due to Cd-doping.     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

Density functional theory study of doping effects in monoclinic clinobisvanite BiVO4

The doping effects of several transition metal impurities for monoclinic BiVO₄ are studied by DFT calculations. The results indicated that transition metal doping could reduce the effective mass of holes on the top of valence band, except Zr doping. In particular, we found the “e” states of impurities have significant influence on the photophysical properties of BiV_1 − xM_xO₄ under visible-light irradiation.     

Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films

Third order nonlinear optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (E_g) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n₂), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ³) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters.     

Enhancement of optical properties and donor-related emissions in Y-doped ZnO

The Zn_1−xY_xO nanoparticles with good optical properties have been prepared by sol–gel method. The yttrium doping effect on the structures and optical properties were investigated by XRD, SEM, XPS and low temperature photoluminescence. The UV emission intensity of yttrium doped ZnO was over 300 times stronger than that of pure ZnO, which was an exciting result in enhancing the ultraviolet near band edge emission in photoluminescence from ZnO nanoparticles. The UV emission band of doped ZnO nanoparticles exhibits a red shift from 388 to 398 nm, indicating a shallow energy level near valence band has been formed due to the yttrium doping into ZnO lattices. The defect-related band is suppressed (I_D/I_UV = 1–0.83) considerably in Zn_1−xY_xO nanoparticles, revealing the quenching of the broad yellow-orange emission. The doping effect on the optical properties is investigated by temperature dependent photoluminescence. The experimental results indicated that the donor level of yttrium is deeper than that of undoped ZnO.     

Optoelectronic properties of GaAs1−xPx alloys under the influence of temperature and pressure

This work is concerned with the dependence of the electronic energy band structures for GaAs_1−xP_x alloys on temperature and pressure that is based on local empirical pseudo-potential method. The band structures of GaAs_1−xP_x alloys were calculated in the virtual crystal approximation using the EPM which incorporates compositional disorder as an effective potential.     

Electronic and structural properties of ZnxCd1−xSySe1−y alloys lattice matched to GaAs and InP: An EPM study

The electronic, optical and structural properties of Zn_xCd_1−xS_ySe_1−y quaternary alloys lattice matched to GaAs and InP are studied. The electronic band structure and density of states are computed using empirical pseudopotential method. The disorder effects are included via modified virtual crystal approximation. The bandgap computed from band structures are utilized to evaluate refractive indices, dielectric constants and ionicity factors for the alloys. Among structural properties elastic constants and bulk moduli are computed by combining the EPM with Harrison bond orbital model. All possible semiconductors from the ZnCdSSe system are found to have direct bandgap. The lattice matched alloys have larger band gap and more ionic character than the lattice matched compounds.     

Structural and electronic properties of zinc blende BxAl1−xNyP1−y quaternary alloys via ?rst-principle calculations

The structural and electronic properties of cubic zinc blende BN, BP, AlN and AlP compounds and their B_xAl_1−xN_yP_1−y quaternary alloys, have been calculated using the non relativistic full-potential linearized-augmented plane wave FP-LAPW method. The exchange-correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW) as well as the generalized gradient approximation (GGA) of Perdew-Burke and Ernzerhof (GGA-PBE). The calculated structural properties of BN, BP, AlN and AlP compounds are in good agreement with the available experimental and theoretical data. A nonlinear variation of compositions x and y with the lattice constants, bulk modulus, direct and indirect band gaps is found. The calculated bowing of the fundamental band gaps is in good agreement with the available experimental and theoretical value. To our knowledge this is the first quantitative theoretical investigation on B_xAl_1−xN_yP_1−y quaternary alloy and still awaits experimental confirmations.     

The influence of aliovalent impurities on the oxidation kinetics of nickel at high temperatures

The influence of chromium and sodium on the nickel oxidation kinetics has been studied as a function of temperature (1373-1673 K) and oxygen activity (10−10⁵ Pa O₂), using microthermogravimetric techniques. It has been shown that the oxidation of Ni-Cr and Ni-Na alloys, like that of pure nickel, follows strictly the parabolic rate law being thus diffusion controlled. In agreement with the defect model of Ni_1−yO, it has been found that the oxidation rate of the Ni-Cr alloy is higher than that of pure nickel, the reaction rate is pressure independent and the activation energy of this process is lower. This implies that the concentration of double ionized cation vacancies in a Ni_1−yO-Cr₂O₃ solid solution is fixed on a constant level by trivalent chromium ions, substitutionally incorporated into the cation sublattice of this oxide. In the case of the Ni-Na alloy, on the other hand, the oxidation rate is lower than that of pure nickel, the activation energy is higher and the oxidation rate increases more rapidly with oxygen pressure. These results can again be explained in terms of the doping effect, by assuming that univalent sodium ions dissolve substitutionally in the cation sublattice of nickel oxide.