Effect of temperature,electric and magnetic field on spin relaxation in single layer graphene: A Monte Carlo simulation study

In this article, we employ the semiclassical Monte Carlo approach to study the spin polarized electron transport in single layer graphene channel. The Monte Carlo method can treat non-equilibrium carrier transport and effects of external electric and magnetic fields on carrier transport can be incorporated in the formalism. Graphene is the ideal material for spintronics application due to very low Spin Orbit Interaction. Spin relaxation in graphene is caused by D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation. We study effect of electron electron scattering, temperature, magnetic field and driving electric field on spin relaxation length in single layer graphene. We have considered injection polarization along z-direction which is perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction. This theoretical investigation is particularly important in order to identify the factors responsible for experimentally observed spin relaxation length in graphene.     

Spin transport and relaxation in graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ∼1000 and the spin injection/detection efficiency was greatly enhanced from ∼1% (transparent contacts) to ∼30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes in the order of 100 ps, charged impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts, in which nonlocal MR was roughly independent of DC bias current for electrons, but varied significantly with DC bias current for holes. These results are very important for the use of graphene for spin-based logic and information storage applications.     

Effect of electric field and magnetic field on spin transport in bilayer graphene armchair nanoribbons: A Monte Carlo simulation study

In this article we study the effect of external magnetic field and electric field on spin transport in bilayer armchair graphene nanoribbons (GNR) by employing semiclassical Monte Carlo approach. We include D'yakonov-Perel' (DP) relaxation due to structural inversion asymmetry (Rashba spin-orbit coupling) and Elliott-Yafet (EY) relaxation to model spin dephasing. In the model we neglect the effect of local magnetic moments due to adatoms and vacancies. We have considered injection polarization along z-direction perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction. To the best of our knowledge there has been no theoretical investigation of the effects of external magnetic field on spin transport in graphene nanoribbons. This theoretical investigation is important in order to identify the factors responsible for experimentally observed spin relaxation length in graphene GNRs.     

Induced voltage due to time-dependent magnetisation textures

We determine the induced voltage generated by spatial and temporal magnetisation textures (inhomogeneities) in metallic ferromagnets due to the spin diffusion of non-equilibrium electrons. Using time dependent semi-classical theory as formulated in Zhang and Li [1] and the drift-diffusion model of transport it is shown that the voltage generated depends critically on the difference in the diffusion constants of up and down spins. Including spin relaxation results in a crucial contribution to the induced voltage. We also show that the presence of magnetisation textures results in the modification of the conductivity of the system. As an illustration, we calculate the voltage generated due to a time dependent field driven helimagnet by solving the Landau-Lifshitz equation with Gilbert damping and explicitly calculate the dependence on the relaxation and damping parameters.     

Circularly polarized light stimulation of spin transport in zinc-blende semiconductors

An experimental and theoretical study on the optically stimulated spin transport in zinc-blende semiconductors is presented. The first part of the paper describes an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers induced by a circularly polarized light. Since the photo-generated hole spins relaxation is extremely fast, the experiment observes only the effect resulting from spin-polarized electrons accumulating at the transverse edges of the sample, as a result of left-right asymmetries in scattering for spin-up and spin-down electrons in the presence of spin–orbit (SO) interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are discussed. The second part of the paper deals with a theoretical investigation using norm-conserving pseudopotential and Green function formalism to analyse the SO mechanism responsible for the light-induced Hall voltage. The findings resulting from the investigation are discussed and are compared with experimental data.     

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.     

300% magnetocurrent in a room temperature operating spin-valve transistor

Here we present the realization of a room temperature operating spin-valve transistor with huge magnetocurrent (MC=300%) at low fields. This spin-valve transistor employs hot-electron transport across a Ni₈₁Fe₁₉/Au/Co spin valve. Hot electrons are injected into the spin valve across a Si–Pt Schottky barrier. After traversing the spin valve, these hot electrons are collected using a second Schottky barrier (Si–Au), which provides energy and momentum selection. The collector current is found to be extremely sensitive to the spin-dependent scattering of hot electrons in the spin valve, and therefore on the applied magnetic field. We also illustrate the role of the collector diode characteristics in determining the magnetocurrent under collector bias.     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据. 关键词： (Ga Mn)As稀磁半导体 时间分辨克尔光谱 电子自旋弛豫 DP机理     

Thermally driven pure spin current through an interacting quantum dot

We study spin-dependent electron transport properties of a thermally driven interacting quantum dot. When an external magnetic field is applied to the quantum dot, the effective transmissions of spin-up and spin-down electrons are separated from each other and have a perfect mirror symmetry with respect to the incident energy at a certain gate voltage. A pure spin current can be induced in the system and modulated by a magnetic field. Under certain magnetic field strengths, a larger pure spin current can be obtained at gate voltages with the values in a range, not just at a specific voltage. These results indicate that the system can be worked as a pure spin current generator.     

Electron spin coherence in Si

We discuss pulsed electron spin resonance measurements of electrons in Si and determine the spin coherence from the decay of the spin echo signals. Tightly bound donor electrons in isotopically enriched ²⁸Si are found to have exceptionally long spin coherence. Placing the donors near a surface or interface is found to decrease the spin coherence time, but it is still in the range of milliseconds. Unbound two-dimensional electrons have shorter coherence times of a few microseconds, though still long compared to the Zeeman frequency or the typical time to manipulate a spin with microwave pulses. Longer spin coherence is expected in two-dimensional systems patterned into quantum dots, but relatively small dots will be required. Data from dots with a lithographic size of 400 nm do not yet show longer spin coherence.     

Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots

We report on optical orientation of electrons in n-doped InAs/GaAs quantum dots. Under non-resonant cw optical pumping, we measure a negative circular polarization of the luminescence of charged excitons (or trions) at low temperature (T=10 K). The dynamics of the recombination and of the circular polarization is studied by time-resolved spectroscopy. We discuss a simple theoretical model for the trion relaxation, that accounts for this remarkable polarization reversal. The interpretation relies on the bypass of Pauli blocking allowed by the anisotropic electron–hole exchange. Eventually, the spin relaxation time of doping electrons trapped in quantum dots is measured by a non-resonant pump–probe experiment.     

Monte Carlo simulation of spin relaxation in core-shell nanowires of dilute magnetic semiconductors

Spin transport behaviour in stand-alone and core-shell nanowire (NW) structure composed of dilute magnetic semiconductor (DMS) has been analysed using Semi-classical Monte Carlo approach. Inspired by recent attempts on exploring various factors instrumental in determining the spin dynamics, we have employed four DMS materials, namely, CdMnS, CdMnSe, ZnMnSe and CdMnTe for our study. Dominant mechanisms for spin relaxation, D'yakonov-Perel and Elliot-Yafet, have been actively employed in our heuristic model to simulate the spin transport. The dependence of spin relaxation length (SRL) on the diameter of the core has been observed and explained. The first order calculations used to develop the model shows the superiority of the core-shell structure over stand-alone nanowire (NW) structure in terms of spin transport.     

Spin dependent 2D electron scattering by nanomagnets

The 2D scattering problem of an electron by a magnetized nanoparticle is solved in the Born approximation with account of the dipole-dipole interaction of the magnetic moments of electron and nanomagnet. The scattering amplitudes in this problem are the two-component spinors. They are obtained as functions of the electron spin orientation, the electron energy and show anisotropy in scattering angle. The initially polarized beam of electrons scattered by the nanomagnet consists of electrons with no spin flipped and spin flipped. The majority of electrons with no spin flipped are scattered by small angles. The majority electrons with spin flipped are scattered in the vicinity of the scattering angles π/2 and 3π/2. This can be used as one more method of controlling the spin currents.     

Transmission of electrons through ferromagnetic material and applications to detection of electron spin polarization

The salient features of the total low energy inelastic electron scattering cross section in transition metals are described by a constant term σ₀ plus a term σ_d that is proportional to the number of unoccupied d-orbitals. This simple model predicts that low energy electrons transmitted through a ferromagnetic ultrathin film acquire a transport spin polarization a(χ). Using the ratio σ₀/σ_d as the only adjustable parameter, the model predicts the enhancement of the spin polarization of the low energy cascade electrons as well as a(χ) in reasonable agreement with the existing observations on Fe, Co and Ni. A detector for electron spin polarization P based on the spin dependent transmission of electrons through ferromagnetic material is proposed which should be superior to existing P-detectors by 1–2 orders of magnitude.     

High-efficiency spin filtering in salophen-based molecular junctions modulated with different transition metal atoms

Based on the density functional theory and nonequilibrium Green's function methods, we investigate the spin transport properties of the molecular junctions constructed by a homologous series of 3d transition metal(II) salophens (TM-salophens, TM = Co, Fe, Ni and Mn) sandwiched between two gold electrodes. It is found that among the four molecular junctions only Co-salophen junction can act as an efficient spin filter distinctively. The conductance through Co-salophen molecular junction is dominated by spin-down electrons. The mechanism is proposed for these phenomena.     

Spin-polarization and magnetoresistance in graphene-based resonant-tunnelling structures

Spin-dependent transport of relativistic electrons through graphene based double barrier (well) structures with ferromagnetic electrodes have been theoretically investigated. Electron transmission with different spin states is strongly influenced by the incident wave vector, the height (depth) of the barrier and the separation between them. When the angle of the incident electrons is varied from zero to ±π/2, spin polarization varies from zero to 100% with characteristic oscillations that indicate spin anisotropy. Due to Klein tunnelling, spin-polarization is always zero for normal incident electrons; high spin-polarization only occurs at large incident angles. Because the resonance features in the spin-dependent transmission result from resonant electron states in wells or hole states in barriers, the conductance can reach e²/h in this resonant-tunnelling structure.     

Rashba coupling induced spin accumulation in two-dimensional domain wall

Non-equilibrium spin accumulation in two-dimensional domain wall (DW) in the presence of external electric field and Rashba type spin-orbit coupling within the Boltzmann semi-classical model is investigated. Transport and relaxation of spin polarized current in the DW is governed by spin-flip rates which are determined by the Rashba interaction and magnetic impurities. Numerical results show that at low impurity densities and nonadiabatic transport regimes, the Rashba interaction significantly enhances spin polarization of conduction electrons inside the DW.     

Design considerations for semiconductor spin lasers

The threshold of semiconductor lasers is drastically reduced by injection of spin polarized electrons if the laser meets specific design rules. Taking into account the challenges of spin injection, spin transport, and spin relaxation, we discuss the threshold reduction in surface- and edge-emitting spin lasers at room temperature.     

Intrinsic electron spin relaxation due to the D'yakonov–Perel' mechanism in monolayer MoS2

Intrinsic electron spin relaxation due to the D'yakonov–Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron–phonon scattering. The intervalley electron–phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.     

Optical measurement and control of spin diffusion in n-doped GaAs quantum wells

Transient spin gratings are used to study spin diffusion in lightly n-doped GaAs quantum wells at low temperatures. The spin grating is shown to form in the excess electrons from doping, providing spin relaxation and transport properties of the carriers most relevant to spintronic applications. We demonstrate that spin diffusion of the these carriers is accelerated by increasing the density or energy of the optically excited carriers. These results can be used to better understand and even control spin transport in experiments that optically excite spin-polarized carriers.