A multi-scale Monte Carlo study of oxide structures on the Cu(1 0 0) surface

We present a multi-scale Monte Carlo study of the oxidation of the Cu(1 0 0) surface based on the Bortz-Kalos-Lebowitz model with the equilibrium energetics obtained from ab initio calculations. The radial and island size distribution functions are examined and Cu-O structures are analyzed at different temperatures and coverages. We concentrate on the coverages of 0.3 monolayer O or less, with variable sub-monolayer coverages of Cu. The results show that even though the ab initio calculations yield a higher barrier for O than for Cu adatom diffusion on Cu(1 0 0), the stability of Cu structures causes the O adatoms to be more mobile on the Cu(1 0 0) surface than the Cu adatoms. We are able to reproduce the c(2 × 2)-O domains seen in the experiments. However, we give an alternative explanation based on the repulsive interactions of O that, on one hand, cause the local ordering and, on the other hand, prohibits large well-ordered domains. We also give interpretation on the formation of the R45°-O reconstruction of Cu(1 0 0) above the O coverages of 0.3 monolayer based on the ab initio energetics.     

The adsorption of atomic N and the growth of copper nitrides on Cu(1 0 0)

We report on the adsorption of nitrogen on the Cu(1 0 0) surface when using a radio-frequency plasma source to obtain atomic nitrogen. In these conditions, more than 0.5 ML of nitrogen can be adsorbed, due to N being implanted in both the surface and subsurface layers. The N adsorption modifies drastically the Cu surface, with the formation of a number of small irregular islands and dislocations. A copper nitride Cu₃N thin film with a (1 0 0) texture can be grown by codepositing Cu and N at ∼100 °C.     

Growth mode and novel structure of ultra-thin KCl layers on the Si(1 0 0)-2 × 1 surface

This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 × 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 × 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results.     

Growth of Si nanostructures on Ag(0 0 1)

The first stages of the growth of silicon on Ag(0 0 1) at moderate temperatures start by the formation of a p(3 × 3) superstructure, which continuously evolves with increasing coverage toward a more complex superstructure. In this paper, the atomic arrangement of the p(3 × 3) and of the “complex” superstructure has been investigated using scanning tunnelling microscopy, surface X-ray diffraction and low energy electron diffraction. The atomic model retained for the p(3 × 3) reconstruction consists in four silicon atoms (tetramers) adsorbed near hollow and bridge sites of the top most Ag(0 0 1) surface layer. For higher coverages, i.e., when the “complex” superstructure starts to develop, the silicon overlayer forms periodic stripes, most probably bi-layers, with a graphitic like structure.     

Nitrogen plasma cleaning of Ge(1 0 0) surfaces

We propose a dry method of cleaning Ge(1 0 0) surfaces based on nitrogen plasma treatment. Our in situ Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) analyses demonstrate that surface contamination remaining after wet treatment was effectively removed by nitrogen radical irradiation at low substrate temperatures. The nitrogen plasma cleaned Ge(1 0 0) surface shows a well-ordered 2 × 1 reconstruction, which indicates the formation of a contamination-free Ge(1 0 0) surface with good crystallinity. We discuss the possible reaction mechanism considering how chemisorbed carbon impurities are removed by selective C-N bond formation and subsequent thermal desorption. These findings imply the advantage of plasma nitridation of Ge surfaces for fabricating nitride gate dielectrics, in which we can expect surface pre-cleaning at the initial stage of the plasma treatment.     

Band structure of surface states and resonances for clean Cu(1 1 0) surface

We have used the layer KKR method to calculate the Shockley and Rydberg surface states and resonances for Cu(1 1 0) for a given model of the surface potentials. This method has not been used before to predict all of the surface band structure for the energy range from the bottom of the conduction band to ∼7 eV above the vacuum level. The previous methods that used only local electron interactions in ab initio calculations could not produce the Rydberg surface barrier bands while those relying on nearly-free-electron parameterisation of bands could not deal with d-bands.     

A density-functional study on the atomic geometry and adsorption of the Cu(1 0 0) c(2 × 2)/N Surface

In this work we have performed total-energy calculations on the geometric structure and adsorption properties of Cu(1 0 0) c(2 × 2)/N surface by using the density-functional theory and the projector-augmented wave method. It is concluded that nitrogen atom was adsorbed on a FFH site with a vertical distance of 0.2 Å towards from surface Cu layer. The bond length of the shortest Cu-N bonding is calculated to be 1.83 Å. Geometry optimization calculations exclude out the possibilities of adsorbate induced reconstruction mode suggested by Driver and Woodruff and the atop structural model. The calculated workfunction for this absorbate-adsorbent system is 4.63 eV which is quite close to that of a clean Cu(1 0 0) surface. The total-energy calculations showed that the average adsorption energy per nitrogen in the case of Cu(1 0 0) c(2 × 2)-N is about 4.88 eV with respect to an isolated N atom. The absorption of nitrogen on Cu(1 0 0) surface yields the hybridization between surface Cu atoms and N, and generates the localized surface states at −1.0 eV relative to Fermi energy E_F. The stretch mode of the adsorbed nitrogen at FFH site is about 30.8 meV. The present study provides a strong criterion to account for the local surface geometry in Cu(1 0 0) c(2 × 2)/N surface.     

Photoemission study of glycine adsorption on Cu/Au(1 1 1) interfaces

The adsorption of glycine on Au(1 1 1) pre-deposited with different amounts of Cu was investigated with both conventional X-ray photoelectron spectroscopy (XPS) and synchrotron-based photoemission. In the Cu submonolayer range, glycine physically adsorbs on the Cu/Au(1 1 1) surfaces in its zwitterionic form and completely desorbs at 350 K. The C 1s, O 1s and N 1s core level binding energies monotonically increase with Cu coverage. This indicates that, in the Cu submonolayer range, the admetal is alloyed with Au rather than forming overlayers on the Au(1 1 1) substrate, consistent with our recent experimental and theoretical results [X. Zhao, P. Liu, J. Hrbek, J.A. Rodriguez, M. Pérez, Surf. Sci. 592 (2005) 25]. Upon increasing the amount of deposited Cu over 1 ML, part of the glycine overlayer transforms from the zwitterionic form to the anionic form (NH₂CH₂COO⁻) and adsorbs chemically on the Cu/Au(1 1 1) surface with the N 1s binding energy shifted by −2.3 eV. When the amount of deposited Cu is at 3.0 or 6.0 ML, the intensity of the N 1s chemisorption peak increases with aging time at 300 K. It indicates that glycine adsorption induces Cu segregation from the subsurface region onto the top layer of the substrate. Judging from the initial N 1s peak intensities, it is concluded that 64% and 36% of the top layer are still occupied by Au atoms before glycine adsorption even when the amounts of deposited Cu are 3.0 and 6.0 ML, respectively. On the Au(1 1 1) surface pre-dosed with 6.0 ML of Cu, part of the chemisorbed glycine will desorb and part will decompose upon heating to 450-500 K. In addition, about 20% of the glycine exists in the neutral form when the glycine overlayer was dosed on Cu/Au(1 1 1) held at 100 K.     

Density functional theory studies on stress stabilization of the Cu(1 1 0) striped phase

Under oxygen exposure, the Cu(1 1 0) surface shows a striped phase consisting of alternating bare (1 1 0) surface areas and added-row (2 × 1)O reconstructions. Density functional theory is used to show that the major origin for the formation of the striped phase is the elastic interaction between these areas. The difference between the surface stress of the bare surface and the (2 × 1)O covered surface is predicted to be 1.3 N/m in reasonable agreement with values derived from grazing incidence X-ray diffraction. Supercell calculations for periods of up to 62 Å confirm that the formation of the striped phase is favorable compared to an added-row (4 × 1)O reconstruction with the same coverage. But the predicted equilibrium period of roughly 30 Å is significantly smaller than in experiment. The calculations are impeded by the surface energy alternating with the number of layers in the slab. This behavior is related to a quantum well behavior of the Cu 4s-electrons. A simple model for this behavior is discussed and compared to ab initio results.     

Study of Si(0 0 1)4 × 2-Ga structure by scanning tunneling microscopy and ab initio calculation

We have studied Si(0 0 1)-Ga surface structures formed at Ga coverages of slightly above 0.50 monolayer (ML) at 250 °C by scanning tunneling microscopy (STM). 4 × 2-, 5 × 2-, and 6 × 2-Ga structures were observed in a local area on the surface. The 4 × 2-Ga structure consists of three protrusions, as observed in filled- and empty-state STM images. The characters of these structures are clearly different from those of other Si(0 0 1)-Ga structures. We also performed an ab initio calculation of the energetics for several possible models for the 4 × 2-Ga structure, and clarified that the three-orthogonal-Ga-dimer model is the most stable. Also, the results of comparing the simulated STM images and observation images at various bias voltages indicate that this structural model is the most favorable.     

Structural relaxation and Jahn-Teller distortion of LaMnO3 (0 0 1) surface

We studied in detail the structural relaxation and Jahn-Teller distortion in LaMnO₃ (0 0 1) surface of the orthorhombic phase by means of classical atomistic simulation. It is found that MnO₂-terminated surface is more energetically favorable than LaO-terminated surface by 0.34 eV. The standard deviation of Mn-O bond lengths of MnO₆ octahedra and Jahn-Teller distortion oscillate in LaMnO₃ (0 0 1) surface. Our simulated atomic displacements in the surface are compared with some ab initio studies.     

Effect of hydrogenation on B/Si(0 0 1)-(1 × 2)

Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the effect of hydrogenation on the atomic geometries and the energetics of substitutional boron on the generic Si(0 0 1)-(1 × 2) surface. For a single B atom substitution corresponding to 0.5 ML coverage, we have considered two different sites: (i) the mixed Si-B dimer structure and (ii) boron substituting for the second-layer Si to form Si-B back-bond structure, which is energetically more favorable than the mixed Si-B dimer by 0.1 eV/dimer. However, when both of these cases are passivated by hydrogen atoms, the situation is reversed and the Si-B back-bond case becomes 0.1 eV/dimer higher in energy than the mixed Si-B dimer case. For the B incorporation corresponding to 1 ML coverage, among the substitutional cases, 100% interdiffusion into the third layer of Si and 50% interdiffusion into the second layer of Si are energetically similar and more favorable than the other cases that are considered. However, when the surface is passivated with hydrogen, the B atoms energetically prefer to stay at the third layer of the Si substrate.     

Cu adsorption on pyrite (1 0 0): Ab initio and spectroscopic studies

Surface optimised S 2p photoelectron spectra show that both surface S²⁻ monomers and (S-S)²⁻ dimers are present at pyrite (1 0 0) fracture surfaces. In order to determine which sulfur species are involved in Cu adsorption, fresh pyrite surfaces were exposed to Cu²⁺ in solution. The S 2p spectra suggest that both types of S surface species are involved in the mechanism of Cu adsorption (activation). Ab initio density functional theory was used to model Cu adsorbed onto pyrite (1 0 0) to support the interpretation of the spectroscopy. Mulliken population analysis confirms the charge distribution suggested by the core line shifts as observed in the photoelectron spectra. The ab initio calculations were consistent with a two-coordinate bond between Cu(I), a surface S monomer and a surface S dimer.     

Theoretical studies of electronic states and phonon modes on the TiC(0 0 1)(1 × 1) surface

We present a comprehensive picture of structural and electronic properties of the TiC(0 0 1)(1 × 1) surface. Our investigations are based on first-principles calculations within the local-density approximation of the density-functional theory. Good agreement has been observed between our calculation and experimental data for the atomic geometry of the surface. In particular, the calculated bond lengths between the first-layer C and the second-layer Ti (d_1C-2Ti = 2.188 Å) and between the first-layer Ti and the second-layer C (d_1Ti-2C = 2.031 Å) are in good agreement with the corresponding experimental values of 2.25 Å and 2.14 Å, respectively. We have also identified surface electronic states and provided clear support for previously available photoemission measurements. We have further calculated surface phonon modes at the zone centre and at the zone-edge point X using a linear response scheme based on the ab initio pseudopotential method. Our calculated surface phonon results are in excellent agreement with electron energy loss spectroscopy results.     

Adsorption of gas-phase oxygen atoms on Pt(1 0 0)-hex-R0.7°: Evidence of a metastable chemisorbed phase

We utilized temperature programmed desorption (TPD) and low energy electron diffraction (LEED) to study the chemisorption of gas-phase oxygen atoms on Pt(1 0 0)-hex-R0.7° at 450 K and 573 K, and find that the types and relative populations of oxygen phases that develop are highly dependent on the surface temperature during adsorption. At both temperatures, oxygen atoms initially adsorb on defects associated with the surface reconstruction. Increasing the coverage to about 0.32 ML (monolayers) at 573 K causes deconstruction and population of a phase with apparent (3 × 1) symmetry that desorbs in a single feature centered at about 672 K. Saturating at 0.63 ML leads to the formation of an additional “complex” ordered phase that desorbs in a sharp feature exhibiting autocatalytic behavior as it shifts from approximately 631 K to 642 K. Uptake at 450 K also initiates deconstruction, but in this case two desorption maxima at about 652 K and 672 K grow simultaneously with increasing coverage to about 0.32 ML. The feature at 672 K is associated with the disordered (3 × 1) phase, while the feature at 652 K has not been previously reported. We attribute this new feature to desorption from disordered arrangements of high oxygen concentrations on (1 × 1) surface regions. As the coverage increases to about 0.51 ML, small amounts of the complex phase grow, while this “high-concentration” (1 × 1) and the (3 × 1) phases continue to develop. We conclude that the complex phase is energetically preferred over the high-concentration (1 × 1) phase, but kinetic barriers hinder its formation at 450 K, causing oxygen to become trapped in the high-concentration (1 × 1) phase. Therefore, the high-concentration (1 × 1) phase is metastable relative to the complex phase. Lastly, above about 0.51 ML, further adsorption at 450 K promotes the growth of Pt oxide islands as detailed in a future investigation.     

Sulfur-induced mobilization of Au surface atoms on Au(1 1 1) studied by real-time STM

The interaction of sulfur with gold surfaces has attracted considerable interest due to numerous technological applications such as the formation of self-assembled monolayers and as a chemical sensor. Here, we report on the interaction of sulfur with Au(1 1 1) at two different temperatures (300 K and 420 K) studied by real-time scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. In the low coverage regime (<0.1 ML), S adsorption lifts the herringbone reconstruction of the clean Au(1 1 1) surface indicating a lateral expansion of the surface layer. An ordered (√3 × √3)R30° sulfur adlayer develops as the coverage reaches ∼0.3 ML. At higher S coverages (>0.3 ML) gold surface atoms are removed from regular terrace sites and incorporated into a growing gold sulfide phase. At 300 K this process leads to the formation of a rough pit and mound surface morphology. This gold sulfide exhibits short-range order and an incommensurate, long-range ordered AuS phase develops upon annealing at 450-525 K. In contrast, formation of an ordered AuS phase via rapid step-retraction rather than etch pit formation is observed during S-interaction with Au(1 1 1) surfaces at 420 K. Our results shed new light on the S-Au(1 1 1) interaction.     

Structure and stability of Sb/Au(1 1 0)-c(2 × 2) surface phase

Adsorption of 0.5 monolayers (ML) of Sb on the Au(1 1 0) surface resulted in the formation of a c(2 × 2) surface reconstruction. Analysis of surface X-ray diffraction data by a direct method revealed the existence of an ordered substitutional surface alloy, with every other hollow site occupied by Au and Sb atoms. Quantitative conventional χ² refinement showed a contraction of 0.12 ± 0.03 Å in the spacing of the first Au layer to the second, an expansion of 0.13 ± 0.03 Å in the second-to-third layer distance, and an inward Sb displacement (rumpling) of 0.21 ± 0.04 Å. This surface phase proved to be extremely robust, with the long-range order of this arrangement remaining up to substrate temperatures of 900 K.     

Ceria nanoformations in CO oxidation on Pt(1 1 1): Promotional effects and reversible redox behaviour

A well-defined CeO_x/Pt(1 1 1) model catalytic system has been fabricated using the self-assembling of Ce adatoms on a Pt(1 1 1) surface with a subsequent oxidation of the nucleating Ce submonolayer (0.3 ML). The resulting system of the “inverse supported catalyst” type consists of CeO_x nanoformations (2D islands of 5-15 nm size and ∼0.3 nm in height) more or less uniformly distributed over the Pt(1 1 1) surface. This CeO_x/Pt(1 1 1) system has been tested in the CO oxidation reaction where both the CO₂ production rate and the Ce oxidation state were monitored in situ. An enhanced reactivity and a remarkable shift of the bistable region of the reaction towards higher CO pressures were observed when compared to a clean Pt(1 1 1) surface. The CeO_x islands exhibit a pronounced redox behaviour that follows the hysteresis cycle of the reaction. The usefulness of such a type of the “inverse model catalyst” for studying the oxygen diffusion supply and the redox behaviour of ceria in the ceria-platinum catalysts is demonstrated.     

An effective Hamiltonian for sulfur adsorption at Au(1 0 0) surface

Adsorption of sulfur at the (1 0 0) surface of gold is analyzed with the help of the density functional theory (DFT). Potential energy surface for a single S atom at the Au(1 0 0) surface is computed and a simple analytical formula was found to reproduce the ab initio results to a good accuracy. Vibration frequencies of the adsorbed S atom are computed using the harmonic approximation and the contribution of zero-point motion to the adsorption energy is evaluated. The effects of surface Au atoms relaxation in the sulfur adsorption is analyzed. The interactions between S atoms adsorbed at the nearest and the next nearest equivalent adsorption sites are computed and used to define the effective Hamiltonian describing the interactions between the adsorbed sulfur atoms.     

In situ Video-STM study of the potential-induced (1 × 1) → “hex” transition on Au(1 0 0) electrode surfaces in Cl containing solution

The potential-induced (1 × 1) → “hex” transition on Au(1 0 0) electrodes in 0.01 M Na₂SO₄ + 1 mM HCl was studied by in situ scanning tunneling microscopy at high time resolution (Video-STM). According to these observations the elementary units of the “hex” surface reconstruction, hexagonally-ordered strings in the Au surface layer, are highly dynamic nanoscale objects. Isolated “hex” strings exhibit dynamic fluctuations in structure and position on the millisecond timescale. These fluctuations exceed the mobility of multistring “hex” domains by several orders of magnitude and can be explained by collective dynamic processes within the strings. Furthermore, the observations reveal a novel 1D mass transport mechanism along the strings, details on the nucleation and growth of “hex” strings and complex string restructuring processes, facilitating “hex” domain ripening.