Microstructure Measurement Techniques for Studying Electromigration in ULSI Interconnects

Electromigration reliability remains a major threat to microelectronic circuits. Microstructure of a thin film conductor used in integrated circuit affects the electromigration lifetime significantly. A wealth of knowledge is acquired on thin film microstructure and electromigration in metallic interconnects from relevant studies in past few decades. However, it is noticed that the various techniques to measure microstructure-related attributes of thin film metallization are not presented in the context of electromigration, since these measurement techniques have their own importance. On the other hand, aggressive scaling of interconnect line-width down to nano regime, poses new challenges to microstructure characterization techniques. This article connects these two aspects of electromigration study, e.g., the characterization of microstructure and measurement techniques for the influential microstructural attributes especially for Cu-based interconnects. The microstructure-related parameters, attributes, and their impacts on electromigration lifetime are discussed. The sample preparation and various techniques to measure attributes of microstructure are presented in detail. This article describes the current state-of-the-art for the advancement of studying microstructure dependent electromigration reliability.     

OEIC technologies for high-speed optical interconnection system

As the level of integration and the power of computation increase, methods of interconnecting computational elements attract more attention and the total system performance is bottlenecked by the problems associated with electrical interconnections. Optical interconnections have advantages of practically unlimited bandwidth and absence of crosstalk. To utilize such merits of optical interconnections, a large number of low-cost high-performance optoelectronic integrated circuits (OEICs) are needed. This paper focuses on monolithically integrated receiver OEICs that consist of InP/InGaAs p-i-n photodiodes and fully ion-implanted InP junction field-effect transistors (JFETs). In the formation of shallow InP p-n junctions we use a co-implantation technique in which we implant a group V element together with Be, a dopant, and take advantage of damage and stoichiometry effects. We fabricate a p-i-n/JFET amplifier receiver front-end circuit and a receiver 2×2 crosspoint switch circuit using this technique. We also develop bandwidth enhancement designs using inductive peaking and cascoding. Finally, we demonstrate a single-channel, free-space optical interconnection system with a bandwidth of 1.5 GHz and an interconnection length of 50 cm.     

串联谐振高压电容充电电源设计及分析

针对高功率脉冲驱动源的重复频率充电需求,基于全桥串联谐振恒流充电技术,研制了一台紧凑型串联谐振高压电容充电电源,平均充电功率12 kW。该电源采用超级电容器预储能和全桥串联谐振电路,大幅降低了场地供电需求,结合模块化集成设计,实现了一体化、便携式设计。针对脉冲驱动源工作需求,分析了全桥串联谐振电路的基本原理和工作过程,给出了电路参数设计方法和Pspice电路仿真结果,利用该电源对等效电容量为0.3 μF的脉冲驱动源进行了充电测试,实现了45 ms内充电60 kV以上,实验结果表明, 其输出能力满足PFL-Marx脉冲驱动源的20 Hz重频充电需求。     

Simple Analog Complementary Metal Oxide Semiconductor Circuit for Generating Motion Signal

We proposed in this study a novel analog complementary metal oxide semiconductor (CMOS) circuit for generating a motion signal when an object moves, which is a simple structure. The proposed unit circuit was constructed using a previously proposed edge detection circuit and a novel proposed circuit for generating a motion signal which accepts an edge signal. The part for generating the motion signal was constructed using six metal oxide semiconductor (MOS) transistors and one capacitor. Results obtained by the simulation program with integrated circuit emphasis (SPICE) and the measured results of a test circuit constructed with discrete MOS transistors and the test circuit fabricated with a 1.2 μm CMOS process showed that the proposed unit circuit can output pulsed current (motion signal) when an object moves on the circuit. It was clarified from the SPICE results that the two-dimensional network constructed with proposed unit circuits can output motion signals. The size of the novel unit circuit is expected to be about 110 × 110μm² obtained by the 1.2 μm CMOS process. It is possible to arrange 90 × 90 unit circuits on a chip which has an area of 1 × 1cm². The aperture ratio is expected to be about 21%, which is twice as large as that of the previously proposed circuit. An integrated circuit for image processing in real time can thus be realized by applying the two-dimensional network constructed with the proposed circuits.     

Full-Wave Analyses for Vertical Interconnections of Shielded Coplanar Waveguide

Three dimensional (3D) interconnection plays important role in modern millimeter wave integrated circuit (MMIC). In this paper, vertical interconnections of shielded coplanar waveguides, which appear typically in multichip module MMICs, are analyzed through the full-wave finite-difference time-domain (FDTD) method.     

脉冲半导体激光器电源电路分析

直接调制的大电流窄脉宽驱动电源是脉冲半导体激光器获得高峰值功率输出的重要保证。建立了脉冲半导体激光器驱动电源的等效电路及其LRC回路模型，对线性常系数二阶齐次微分方程的分析解进行了分析，并与实验结果做了比较。结果显示，当电源主要参数满足R≥2√L/C关系时，可获得较为理想的非振荡放电过程，实测脉冲波形及其特性与计算结果相符合。     

Copper metallization for ULSL and beyond

The investigation of copper for use as an interconnection metal in the ultra large-scale integration (ULSI) era of silicon integrated circuits has accelerated in the past several years. The obvious advantages for using copper to replace currently used Al are related to its lower resistivity (1.7 μΩ-cm vs. 2.7 μω-cm for Al) and its higher electromigration resistance (several orders of magnitude higher compared with Al). The goal of this review is to examine the properties of copper and its applicability as the interconnection metal. A comparison of electromigration behavior of various possible interconnection metal in standard “bulk” state is made. This is followed by a review of the calculations made comparing (a) the RC (resistance × capacitance) time constants of various material systems and (b) the joule heating of the interconnection materials. A comparative study of various metal systems for the application as the interconnect metal is then made. These discussions will clearly establish the superiority of copper over other metals despite certain limitations of copper. We then review the properties, both physical and chemical, and materials science of copper. The concept of using alloys of copper with a minimal sacrifice on resistivity to gain reliability is also discussed. This is followed by the review of the deposition, pattern definition and etching. passivation, need of the diffusion barrier (DB) and adhesion promoter (AP), planarization and dual damascene process using chemical mechanical planarization, and reliability. This review shows that copper will satisfy the needs of the future integrated circuits and provide high performance and reliability as long as we provide an appropriate barrier to diffusion in the underlying devices and the dielectric.     

Z箍缩装置外磁绝缘传输线全尺寸粒子模拟研究

采用电路模拟得到的柱孔结构处向外磁绝缘传输线传输的电压反射波来等效Z箍缩装置中的柱孔结构至丝阵负载部分,实现了Z箍缩装置四层外磁绝缘传输线的全尺寸粒子模拟.为了进一步提高柱孔结构和丝阵负载等效电路模型的精度,通过粒子模拟,对电路模拟得到的电压反射波进行了修正.PBFA Z装置四层外磁绝缘传输线部分的全尺寸粒子模拟结果表明,修正电压反射波后得到的绝缘堆处电压波形和电流波形比原有电路模拟结果更接近实验结果.另外,利用粒子模拟结果分析和解释了丝阵负载内爆对外磁绝缘传输线脉冲功率传输物理过程的影响. 关键词： Z箍缩 外磁绝缘传输线 粒子模拟 等效电路模型     

正负双极性直流高压充电电源设计北大核心CSCD

高压脉冲电容器是脉冲功率系统中应用较广的储能器件。根据大容量能库型脉冲装置对充电电源的技术要求,研制了一种输出电压±0.5~±10 kV可调、最大平均功率约3 kW、双极性一体化直流高压充电电源。设计上采用控制电路与正负双极性直流高压输出主电路一体化方式,通过隔离、屏蔽和保护措施,解决了目前双极性直流高压充电电源存在的正负极性电压不平衡、采样控制信号与高压地未隔离问题,减小了电源体积,提高了电源的鲁棒性、可靠性和电磁干扰能力。100多台充电电源在18.3 MJ脉冲装置中同时运行,在复杂电磁干扰环境下可靠稳定工作。     

用自积分式罗氏线圈测量纳秒级高压脉冲电流

 介绍了测量纳秒级高压脉冲大电流信号用的自积分式罗氏线圈的优点、用途、基本原理及设计。利用传输理论分析了它的信号响应及干扰。对研制出的罗氏线圈进行了标定。设计的线圈的灵敏度在1.4mV/A，可以采用的上升时间小于2ns，脉宽小于200ns，电流信号10A～40kA。自积分式罗氏线圈广泛用于脉冲功率技术中的快过程大电流测量。     

Signal Formation of Image-Edge Motion Based on Biological Retinal Networks and Implementation into an Analog Metal-Oxide-Silicon Circuit

A simplified model was proposed for the formation of edge signals and generation of motion signals of a target based on the information processing mechanisms of outer and inner retinas of a vertebrate. Analog metal-oxide-silicon (MOS) integrated circuits were designed based on the model. Simulation program with integrated circuit emphasis (SPICE) simulation results showed the performance of local adaptation over a wide dynamic range in the outer retinal circuit and generation of the velocity signal of a moving edge in the inner retinal circuit. Preliminary experimental results showed local adaptation in a given input range in the outer retinal circuit and the generation of motion pulsed signals in the inner retinal circuit.     

Ablation of polymer foils for backside opening of thin film layered flexible polymer substrates

For increasing the packing density of electronic devices and enabling 3D wiring, new concepts of interconnection for flexible circuit boards are required. The backside wiring is one innovative concept which, however, requires interconnections from the back to the front side by means of vias.Results on backside opening of polymer foils for exposing a thin metal film deposited at the front side are presented. For the experiments, a thin polyimide foil covered with a thin molybdenum metal film was used. By using mask projection of a pulsed UV-laser beam (248 nm, 20 ns) polymer foil was ablated. The laser ablation process must be adjusted in the manner to avoid damage of the thin metal film, to prevent cones formation at laser ablation, but still enabling the clean ablation of the polymer. The influence of process parameters on the backside opening is discussed and compared with theoretical estimations of the laser-induced temperatures. Using a two-step ablation process applying first high fluences to ablate the main part of the foil and finishing with low laser fluence turns out to be advantageous. This backside opening (BSO) can be used to perform an electrical contact from the backside.     

150 kV全固态高压脉冲发生器设计

设计了一种基于全固态MOSFET半导体开关器件的Marx脉冲发生器。充电回路用快恢复二极管代替充电电阻,减小了充电部分功率损耗;将主电路和驱动电路集成在一起,采用自取电模式给驱动电路供电;由光纤传输驱动信号,抑制了放电回路对触发信号的干扰;采用顺/逆时针方向环形分布的紧凑型拓扑结构,不仅减小了回路电感,而且实现了脉冲发生器的小型化与模块化。所设计的Marx发生器充电部分仅需提供900 V低压,用180级单元串联,获得最高幅值为150 kV、脉宽1~5 s可调的高压快脉冲,前沿控制在500 ns以内。利用该脉冲发生器在50 k电阻和5 pF电容并联的等效负载上进行了一系列实验;比较分析了脉冲发生器工作过程中影响脉冲上升沿的几个主要因素,包括回路电感、MOSFET驱动电压及主回路分布电容等,并讨论了提升脉冲前沿的技术措施。     

Quasi-diffraction effects during irradiation of moving surfaces: Part II

In the second part of this work, the general principles of the quasi-diffraction approach developed in the first part are applied to analyzing the irradiation of moving surfaces by pulsed fluxes of fast charged particles. Special emphasis is given to the fact that the operating aperture is scanned by a narrow focused beam during the formation of these fluxes.     

旋转磁通压缩脉冲发电机驱动电磁轨道炮实验

介绍了被动式旋转磁通压缩发电机和电磁轨道炮的基本原理。给出了 2 5MW被动式旋转磁通压缩发电机的短路实验和驱动电磁轨道炮的连发实验 ,连续将 4发 7.8g弹丸驱动到2 50m·s- 1。     

高功率重复频率Marx型脉冲功率源小型化技术研究进展

传统的高功率重复频率脉冲功率源通常以低电压储能、升压、高压脉冲形成线、输出的顺序工作。因而系统至少包括低压储能和高压脉冲形成线两个储能环节,同时高压脉冲形成线的体积随着电压的升高快速增长。针对这些问题,课题组提出了一种高功率重复频率Marx型脉冲功率源小型化研究的设计思路和实现方式,并开展了相关技术研究。主要介绍了课题组在关键技术上取得的重要进展,包括高储能密度的储能/脉冲成形一体化技术、低抖动重复频率气体开关技术、低抖动高能触发技术、紧凑型Marx高压串叠技术等一系列关键技术。同时介绍了课题组研制的几种典型紧凑结构重复频率Marx型脉冲功率装置:同轴结构快Marx发生器、基于薄膜介质线的脉冲功率源、模块化低阻抗紧凑型Marx发生器、20 GW高功率重复频率脉冲驱动源。通过探讨关键技术研究及其发展现状,为未来脉冲功率源小型化研究的发展和应用方向提供参考。     

Simple analog edge detection circuit based on vertebrate retina

Novel analog edge detection circuits were proposed and fabricated based on the vertebrate retina. The proposed unit circuit is constructed with one photodiode and about eight n-channel metal oxide semiconductor (MOS) transistors. The results with the simulation program with integrated circuit emphasis (SPICE) showed that the one- and two-dimensional array of proposed circuits can detect edge positions with a dynamic range of about 5 decades. The test circuit was fabricated on the breadboard using discrete MOS transistors. The measured results of the test circuit showed that the proposed circuit can detect edge positions. Under the condition that the photodiode used as the input part of the proposed unit circuit is 4,275 μm², the fill factor of the novel circuit is expected to be about 51.7%. The advanced integrated circuit for edge detection which is characterized by a high fill factor, wide dynamic range and low power consumption can be realized by applying the proposed circuit.     

基于原始波形测量的脉冲电场探测器

介绍了脉冲电场微分测量和原始波形测量的基本原理,设计研制了一系列不同灵敏度的脉冲电场原始波形测量系统,分析了脉冲电场探测器的理论修正模型。该测量系统主要包括天线模块、积分器模块、放大和驱动模块以及光电传输模块,利用同轴型TEM小室对测量系统进行了时域标定。结果表明:测量系统的前沿响应时间小于1.0 ns,系统输出脉冲平顶在10.0μs内下降不超过5%,测量系统输出幅度与电场强度在20 dB的动态范围内呈线性关系,该系列探测器可以用来测量最小10 V/m、最大100 kV/m的电场强度,满足高空电磁脉冲标准环境的测量要求。     

A multilevel nano-scale interconnection RLC delay model

Based on the multilevel interconnections temperature distribution model and the RLC interconnection delay model of the integrate circuit,this paper proposes a multilevel nano-scale interconnection RLC delay model with the method of numerical analysis,the proposed analytical model has summed up the influence of the configuration of multilevel interconnections,the via heat transfer and self-heating effect on the interconnection delay,which is closer to the actual situation.Delay simulation results show that the proposed model has high precision within 5% errors for global interconnections based on the 65 nm CMOS interconnection and material parameter,which can be applied in nanometer CMOS system chip computer-aided design.     

一种重复频率脉冲导引磁场的设计

介绍了一种重复频率脉冲磁场作为高功率微波源的导引磁场的设计,该磁场电源具有功耗低、发热量小、结构紧凑等优点,符合高功率微波朝重复频率方向发展的需求。从产生脉冲磁场的电流表达式出发,根据涡流损耗不能太大、品质因数要高和电容储能要小的原则,给出了脉冲磁场产生系统的储能电容和充电电压的优化设计方法。最后将此方法应用于Ka波段返波振荡器导引磁场的设计,确定出产生脉冲磁场电路的电容和充电电压的值,并进行了仿真和实验研究,结果与理论要求吻合较好,在重复频率10 Hz条件下能稳定运行,验证了设计的合理性。