2080 nm long-wavelength,high-power dissipative soliton resonance in a dumbbell-shaped thulium-doped fiber laser

We demonstrate a 2080 nm long-wavelength mode-locked thulium(Tm)-doped fiber laser operating in the dissipative soliton resonance(DSR) regime. The compact all-fiber dumbbell-shaped laser is simply constructed by a 50/50 fiber loop mirror(FLM), a 10/90 FLM, and a piece of large-gain Tm-doped double-clad fiber pumped by a 793 nm laser diode. The 10/90 FLM is not only used as an output mirror, but also acts as a periodical saturable absorber for initiating DSR mode locking. The stable DSR pulses are generated at the center wavelength as long as 2080.4 nm, and the pulse duration can be tunable from 780 to 3240 ps as the pump power is increased. The maximum average output power is 1.27 W, corresponding to a pulse energy of 290 nJ and a nearly constant peak power of 93 W. This is, to the best of our knowledge, the longest wavelength for DSR operation in a mode-locked fiber laser.     

Single-frequency operation of a diode-pumped green laser using multi-Brewster plates

In a diode-pumped, KTP intracavity frequency-doubled green laser, multi-Brewster plates are used to achieve high power single-frequency operation. With a simple experimental setup, single-frequency operation of the diode-pumped green laser with output of 46 and 218 mW is obtained by one and three Brewster plate, respectively.     

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

A KGd(WO?)? Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.     

Analysis of characteristics of long-wavelength semiconductor laser diode amplifiers

The effects of amplifier facet reflectivities, cavity length, input signal frequency, amplifier cavity resonant mode, modulation frequency and bias current on various semiconductor laser diode amplifier characteristics have been investigated for both 1.3m- and 1.55m-wavelength amplifiers. The analysis is based on a parabolic relationship between the amplifier peak-gain coefficient and injected carrier density, which improves the accuracy and range of applicability.     

Single-frequency regime of oscillation of a high-power He—Ne laser with a transverse SHF discharge

The possibility of producing a single-frequency regime of oscillation of a He−Ne laser with a transverse shf discharge by changing the pressure of the gas mixture is investigated. A single-frequency regime of oscillation with a high radiation power (10 mW) and a low level of amplitude noise (10⁻⁵ Hz^−1/2) has been produced at a pressure above 6 mm Hg. The laser power in the single-frequency regime comprises 60–80% of the power in the regime of multifrequency oscillation. Physics Department, Tashkent State University, Campus, Tashkent, 700095, Uzbekistan. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 116–118, January–February, 1997.     

Compact,temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.     

机载大功率半导体激光信标系统设计

为配合地面探测跟踪系统对飞行目标的探测,设计了一种以４０ Ｗ 紧凑型半导体激光器为光源、具有一定发散角的机载式单色信标系统。由于系统要满足机载平台加装体积小、质量轻、散热好的要求,设计了一体成型的鳍片式壳体结构,解决系统散热问题的同时,控制了整体质量。为实现在有限体积内,４０ Ｗ 单阵列光纤耦合半导体激光器模块所需的６０A 大电流恒流驱动,采用叠相调制技术和同步ＢUＣＫ 变换电路结构;为解决激光器在高空低温环境下输出光功率和中心波长能够稳定控制的难题,设计了数模混合双向温控系统。利用ＺEMAX 软件设计了双凹透镜组结构的扩束装置,实现了对激光发散角的发散和可调节。通过环境考核测试,系统在０℃～１５℃的低温环境下,输出光功率稳定度和波长控制精度均能满足要求。     

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

A 1.6μm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.     

Single-frequency operation of a laser diode side-pumped Q-switched Tm:YAG laser using seeding injection technique

A laser diode (LD) side-pumped 2 μm single-frequency Q-switched Tm:YAG laser was demonstrated. The laser was injection seeded by a CW single frequency Tm:YAG laser with a twisted-mode cavity. The maximum single-frequency pulse energy was 16.3 mJ, with a pulse width of 570 ns and a pulse repetition rate of 10 Hz. The linewidth of the 2 μm single-frequency Q-switched laser was 0.68 MHz, measured by using the optical heterodyne technique. The M ² of the laser beam was measured to be 1.09 and 1.03 for x direction and y direction, respectively.     

大功率盘形激光焊飞溅特征分析

焊接过程的在线监控是保证激光焊接质量的关键, 为此, 首先要找到焊接过程传感特征量变化规律以及与焊缝质量间的关系. 飞溅是大功率盘型激光焊接过程中的一个重要现象, 其特征与焊接质量、焊接过程稳定性以及能量利用率等有着密切的联系. 以大功率盘形激光焊接304不锈钢为试验对象, 研究焊接过程中的飞溅特征. 在紫外波段和可见光波段应用高速摄像机摄取焊接过程中产生飞溅的瞬态特征, 通过计算机图像处理技术分析飞溅的数量、面积、行程和质心高度特征参量. 以焊件熔宽作为衡量焊接质量与焊接过程稳定性的因素, 对飞溅特征量进行线性和高次拟合, 研究飞溅特征参量的波动规律, 并与焊件熔宽的变化对比, 探索焊接过程的飞溅特征参量变化规律. 试验结果表明, 根据飞溅特征量变化规律能够对大功率盘形激光焊接304不锈钢板焊接质量做出动态评估, 为实现焊接质量的在线监控提供了试验依据.     

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.     

大功率780 nm半导体激光器的设计与制备

设计并制备了一款780 nm半导体激光器,并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层,采用GaAsP/GaInP作为量子阱/波导层有源区,限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术,在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤（COD）,钝化后器件未发生COD现象,电流在10 A时输出功率10.1 W,电光转换效率54%。体布拉格光栅（VBG）外腔锁定前后,器件的光谱半峰全宽分别为2.6 nm和0.06 nm,VBG变温调控波长范围约230 pm。     

Doppler-free spectroscopy of mercury at 253.7 nm using a high-power, frequency-quadrupled, optically pumped external-cavity semiconductor laser

We have developed a stable, high-power, single-frequency optically pumped external-cavity semiconductor laser system and generate up to 125 mW of power at 253.7 nm using successive frequency doubling stages. We demonstrate precision scanning and control of the laser frequency in the UV to be used for cooling and trapping of mercury atoms. With active frequency stabilization, a linewidth of <60 kHz is measured in the IR. Doppler-free spectroscopy and stabilization to the 6(1)S(0)-6(3)P(1) mercury transition at 253.7 nm is demonstrated. To our knowledge, this is the first demonstration of Doppler-free spectroscopy in the deep UV based on a frequency-quadrupled, high-power (>1 W) optically pumped semiconductor laser system. The results demonstrate the utility of these devices for precision spectroscopy at deep-UV wavelengths.     

大功率半导体激光器光谱合束光栅热效应分析

提出了一种大功率半导体激光器光谱合束光栅仿真模型。该模型针对光谱合束中的核心器件光栅的光-热-应力变化特性进行了分析。数值分析结果表明,当激光巴条功率为200 W,自然对流系数为10 W·(m2·K)?1时,衍射光栅上温度最高点可升高至346.52 K,应力最高点可升高至0.4825 Pa,光栅表面变量最高为52.28 nm/mm,这将会使得反馈光束中心位置发生0.25～0.3 mm的偏移,从而影响激光功率以及合束效率。减少衍射光栅基底厚度,在相同激光光源条件下工作,温度、应力、面形以及应变的变化均能有效抑制,这与实验结果具有较高的一致性。该方法为大功率半导体激光器的结构设计和光学器件的测试分析提供了有效的多物理场分析,为激光器设计和测试提供了综合分析数值模型。     

CW Cr2+:CdSe laser pumped by semiconductor disk laser

An output power of 0.85 W with a differential efficiency with respect to absorbed pump power of 55.4% is achieved for a Cr²⁺:CdSe laser with a wavelength of 2.6 ??m under optical pumping with a semiconductor disk laser with a wavelength of 1.98 ??m.     

High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.     

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.     

Broad-bandwidth shot-noise-limited class-A operation of a monomode semiconductor fiber-based ring laser

We demonstrate the operation of a monomode semiconductor laser with a relative intensity noise limited by the shot-noise floor, -156 dB/Hz for a typical detected photocurrent of 1 mA, over a large frequency range from 50 MHz to 18 GHz. We achieve direct control of photon lifetime to turn an initially class-B laser into a relaxation-oscillation-free class-A one while preserving strict single-mode operation. Finally, we confirm experimentally that the laser operation in the desired class-A regime allows a dramatic filtering out of the relative intensity noise.