6H-SiC缺陷的慢正电子研究

The defect formation and annealing behavior in as-grown and electron-irradiated 6H-SiC wafers were investi-gated by variable-energy slow positron beam. For the n-type as-grown samples, it was found that annealing decreased the defect concentration due to recombination with interstitial, and when it was annealed at 1400 ±C for 30 min in vacuum, a 20 nm thick Si layer was found on the top of SiC substrate, which is a direct proof of the Si atom diffusing to the surface when annealed at the high temperature stages. During the high temperature annealing stage, we found an obvious surface effect occurred that induced the higher S parameter close to the surface. This may be caused by the diffusion of the Si atoms to the surface during annealing. After 10 MeV electron irradiation of the n-type 6H-SiC, the positron effective diffusion length decreased from 86.2 nm to 39.1 nm. This shows that there are some defects created in n-type 6H-SiC. But in the p-type 6H-SiC irradiated by 10 MeV electrons, the change is very small. This may be because of the opposite charge of the vacancy defects. The same annealing behavior as that of as-grown 6H-SiC samples was also observed for the 1.8 MeV electron-irradiated 6H-SiC samples except that after being annealed at 300 ±C, its defect concentration increased. This may be explained as the generation of carbon vacancies, due to either the recombination between divacancies and silicon interstitial, or the charge of the charge states.     

有机半导体的异质结(Hetero-junction)问题

有机异质结在有机电子器件中起到十分重要的作用,它不仅对有机器件中载流子的运动起到控制和调节的作用,而且对器件的基本功能特征,诸如光-电转换,电-光转换器件中某些要害步骤(如电子转移,能量转移等)起到重要的作用.本文扼要地从层间能量关系对有关有机异质结进行分类和讨论,并对异质结的界面能量关系中存在的问题及其进展作了介绍.显然,这将对有关器件设计的思路有所帮助.     

有机/无机异质结薄膜发光二极管

聚合物发光二极管（LED）自从Burrou吵es等于1990年首次报导PPV的电致发光［‘］以来，由于聚合物半导体具有热和化学性能的稳定，克眼了有机小分子材料容易晶化的优点，在平板显示领域必将占有一席之地，从而吸引了许多科学家投身到这一领域来．众所周知，要想实现LED的实用化     

CuS/TiO2纳米管异质结阵列的制备及光电性能

利用水热反应制备了CuS/TiO2纳米管异质结阵列,采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)和X射线衍射谱(XRD)等手段表征了异质结阵列的表面形貌和晶体结构.电流-电压曲线结果表明,CuS/TiO2纳米管异质结阵列具有明显的整流效应.根据表面光电压谱和相位谱,在376～600 nm之间,CuS/TiO2纳米管异质结阵列表现为p型半导体特征,电子在表面聚集;在300～376 nm之间表现为n型半导体特征,空穴在表面聚集;在376 nm处异质结阵列的表面光伏响应为零.CuS/TiO2和CuS/ITO之间界面电场的不同导致异质结在不同波长范围内表面电荷聚集的差异.光电化学性能测试发现,以CuS/TiO2纳米管异质结阵列为光阳极组成的光化学太阳电池,在大气质量AM 1.5G,100 mW/cm2标准光强作用下具有0.4%的光电转换能力.     

FeS2/MoS2纳米花异质结室温电催化固氮

氨及其产物在储氢、农业和工业上都不可或缺,与此同时环境问题日益受到关注,二氧化碳零排放、低电能消耗的电催化固氮已经成为世界各国能源发展的重要战略目标．本工作中,从生物固氮酶中的Fe-Mo-S辅助因子获得灵感,一锅法合成了FeS₂/MoS₂双金属硫化物催化剂,用于电化学氮还原(NRR).FeS₂/MoS₂催化剂由纳米片构筑形成的纳米花形貌,增大了催化剂的活性表面积．并且FeS₂/MoS₂双金属硫化物之间的协同作用和异质界面有助于界面间电子转移,提高催化剂的活性．对FeS₂/MoS₂催化剂在0.1mol·L^-1 HCl电解质中进行电化学氮还原测试,-0.2V (νs.RHE)下氨产率最高可达(11.3±0.18)μg·h^-1·mg^-1,法拉第效率为(5.29±0.12)%．在酸性介质中既表现出良好的NRR活性也展示出极好的稳定性．这为进一步探索具有异质...     

一维金属/半导体异质结纳米材料的制备及性能研究*

一维金属/半导体异质结纳米材料因其新颖的结构、独特的光电特性和在纳电子领域应用的巨大优势和潜力而受到广泛的关注和重视。本文基于国内外最新研究进展及本课题组的研究工作,系统综述了近年来逐步建立起来的一维金属/半导体异质结纳米材料的制备方法及其性能研究。着重介绍了化学气相沉积法、热蒸发沉积法、模板法、自组装法和液相法等几种比较重要的制备方法,并分析了它们的优缺点;详细分析了此类纳米材料库伦阻塞效应、肖特基二极管现象、欧姆接触特性、电致发光特性等性能的特点。文章最后指出液相法能有效获得高质量和技术可用的一维金属/半导体异质结纳米材料,使用该法进行制备和性能研究将成为此类纳米材料的未来发展方向。     

p-n异质结型光催化剂BiOBr/NaBiO3的制备与可见光催化活性

采用化学蚀刻法在NaBiO3表面利用HBr与NaBiO3的反应原位沉积BiOBr,制备了异质结型光催化剂.利用X射线粉末衍射仪(XRD)、紫外-可见漫反射光谱仪(UV-Vis DRS)和扫描电子显微镜(SEM)等对其相结构、微观形貌和光吸收性能进行了表征.光催化实验结果表明,BiOBr/NaBiO3在可见光下可以有效降解罗丹明B(RhB)溶液,当BiOBr与NaBiO3的摩尔比为40.1%时,BiOBr/NaBiO3具有最大催化活性.通过不同牺牲剂的加入及荧光实验结果推测了该异质结型材料光催化过程中光生载流子的传输方向及活性物种.研究结果表明,BiOBr/NaBiO3催化活性的增强主要归结为两者之间形成了有效的异质结,其内建电场能够促进光生载流子的分离,同时h+在光催化降解过程中是主要的活性物种.     

石墨烯/MoS2异质结的界面相互作用及其肖特基调控的理论研究

本文基于第一性原理方法,系统研究了外电场对石墨烯/MoS₂范德瓦耳斯异质结界面相互作用及其电子性质的影响.计算结果表明石墨烯和MoS₂之间通过微弱的范德瓦耳斯力结合形成异质结,石墨烯/MoS₂异质结的能带基本上是单层石墨烯和单层MoS₂能带结构的简单叠加并形成了N型肖特基势垒;由于异质结的石墨烯层的电子向MoS₂层转移,导致石墨烯表面带正电,MoS₂表面带负电,在异质结内部形成了方向由石墨烯指向MoS₂的内建电场.此外,对异质结施加不同强度的负电场时,体系的接触类型逐渐由N型肖特基接触类型转变为欧姆接触;对异质结施加不同强度的正电场时,体系的P型肖特基势垒呈降低趋势,体系的N型肖特基势垒呈现先缓慢升高再急剧下降的特点,在电场强度提高至5.0 V·nm^-1附近时,接触类型由N型肖特基接触转变为P型肖特基接触.此项工作将对相关二维场效应晶体管的设计提供参考.     

ZnO/Cu2O异质结中深能级表面光伏特性

采用恒电压沉积法在导电玻璃(FTO)上制备了具有三棱柱金字塔状的ZnO/Cu2O异质结薄膜. 利用场发射扫描电镜(FESEM)与X射线衍射仪(XRD)对薄膜的微观形貌和晶体结构进行了表征. 利用表面光电压谱(SPS)、场诱导表面光电压谱(FISPS)和相位谱(PS)研究了单一Cu2O与ZnO/Cu2O异质结薄膜的表面光伏性质. 结果表明, 与单一Cu2O薄膜相比, ZnO/Cu2O异质结薄膜的光伏响应范围拓展到了600~800 nm. 根据SPS, FISPS和PS的作用原理, 拓展部分的光伏响应归因于ZnO/Cu2O异质结中Cu2O层的深能级跃迁, 该跃迁在ZnO-Cu2O界面电场(方向由ZnO指向Cu2O)的作用下得到加强, 同时深能级跃迁产生的电子-空穴对在ZnO-Cu2O界面电场的作用下得到了有效分离和传输.     

硫化锌与硫化锌/氧化锌异质结纳米线的化学气相沉积法制备与表征

介绍一种利用石墨还原快速制备大量硫化锌纳米线的方法,并分别合成了超晶格型、双轴型、核/壳型的硫化锌/氧化锌异质结纳米线。所合成的硫化锌纳米线存在六方纤锌矿和立方闪锌矿两种晶型,纳米线长度达几十微米,直径在20-50 nm,直径均匀且产量很高。在具有双轴型的硫化锌/氧化锌异质结中,首次发现具有超结构特征的氧化锌。HRTEM分析表明,硫化锌/氧化锌超晶格异质结界面为ZB-ZnS(111)∥ZnO(0001),而核/壳型异质结界面为W-ZnS(0001)∥ZnO(0001),这三个晶面分别为各自晶体的极性面,即所合成的硫化锌/氧化锌异质结中极性面相互平行。对ZnS 和ZnS/ZnO 异质结的生长机制进行了探讨,并对硫化锌纳米线与硫化锌/氧化锌异质结的光学性质进行了分析。     

金刚石膜微结构的慢正电子束测量研究

The microstructure of diamond films was studied by slow positron beam and Raman spectroscopy. For the Raman spectroscopy experiment on diamond films, a high fraction of the sp3 hybridized bond was detected in samples. Positron annihilation spectra analysis further illuminated that the concentration and types of defects were different in each sample. S-E curves of all samples showed that diamond crystal structures had obvious variation in each sample. These results indicated that positron annihilation spectroscopy was an effective means to measure microstructure of diamond films.     

锑化镓的光助微刻蚀及其表面氧化物的研究

用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解，锑化镓电极在一定电势下生成的氧化膜，用俄歇能谱证明，其主要成分为难溶的氧化锑，此氧化膜的存在抑制了锑化镓的进一步腐蚀，同时亦使锑化镓的半导体光电化学性能大为减弱，通过激光微刻蚀及电子显微镜的观察，在刻蚀剂中添加酒石酸，柠檬酸和氢氟酸等试剂，可使刻蚀形得改善，实验研究了锑化镓的平带电势的测定。     

Thickness Impacts of Vacancy Defects in Epitaxial La0.7Sr0.3MnO3Thin Films Using Slow Positron Beam

Thickness effects of thin La_0.7Sr_0.3MnO₃ (LSMO) films on (LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7 sub-strates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Re-sults reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygen- ambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films.     

Interface microstructure and diffusion kinetics in diffusion bonded Mg/Al joint

The interface microstructure, formation of diffusion bonded joint and regulation of atom diffusion were studied by means of scanning electron microscope (SEM), energy dispersion spectroscopy (EDS) and electron probe microanalyser (EPMA). The experimental results indicated that an obvious interfacial transition zone was formed between Mg and Al, and there are three intermetallic layers Mg₁₇Al₁₂, MgAl and Mg₂Al₃ in this zone. Diffusion activation energy of Mg and Al in the above layers was lower than that in the Mg and Al base metals. The thickness (x) of each layer can be expressed as x ² = 4.14exp(−28780/RT)(t−t ₀), x ² = 31.4exp(−25550/RT)(t−t ₀) and x ² = 0.6exp(−22600/RT)(t−t ₀) corresponding to Mg₁₇Al₁₂, MgAl and Mg₂Al₃ with heating temperature (T) and holding time (t).     

Pt/Al2O3和Pt-Cu/Al2O3催化CCl4氢化脱氯反应

制备了Al2O3负载Pt单金属催化剂和负载Pt-Cu双金属催化剂,比较了二者不同还原温度对其催化CCl4氢化脱氯反应性能的影响。 单金属Pt催化剂上主要生成CHCl3,而双金属Pt-Cu催化剂上产物随催化剂制备时的还原温度不同而异,当催化剂经400 ℃用H2还原后产物主要为CHCl3,而当催化剂经800 ℃用H2还原后产物主要为CCl2CCl2。 由于CCl4氢化反应是强放热反应,催化剂表面局部过热使得在反应中生成的C2等产物聚合结焦,覆盖了催化剂的活性中心,导致催化剂失活。 因此,通过加入甲醇作为稀释剂以带走部分反应热可提高催化剂的稳定性。 同时也降低了CHCl3的选择性,提高了CCl2CCl2的选择性。     

Activity Enhancement of Pt/Ba/Al2O3 Mixed with Mn/Ba/Al2O3 for NOx Storage-reduction by Hydrogen

The storage and reduction of nitrogen oxides has attracted much attention as an efficient way to reduce NOx emission of lean-burn gasoline and diesel engines1-5. At present, NOx storage and reduction (NSR) catalysts based on Pt and Ba have been extensivel…     

MoNiP/Al2O3加氢脱氮催化剂的研究:金属分散状态对催化剂活性的影响

采用ＰＡＳＣ Ａ，ＸＰＳ，ＳＴＥＭ和微型反应色谱等技术，研究了一系列ＭｏＮｉＰ／Ａｌ２Ｏ３催化剂表面活性组分的分散状态及其对催化剂ＨＤＮ反应活性的影响。     

CuO/Al2O3脱硫反应单颗粒模型化研究

针对氨再生CuO/Al2O3脱硫反应只发生在固体内外表面的CuO上这一特性,在粒子模型基础上,建立了描述氨再生CuO/Al2O3脱硫的单颗粒数学模型,并在热重分析仪上进行了CuO/Al2O3颗粒脱硫反应动力学的研究,将反应过程中CuO逐步变为CuSO4、孔隙率逐渐减小及气相SO2的有效扩散系数逐渐降低的现象用经验式De=α（1-x）b表达,从而使结构变化对反应的影响在颗粒模型中体现出来。模型预测与实验结果吻合良好。数值分析表明,孔扩散对CuO/Al2O3颗粒脱硫反应进程起重要作用,扩散活化能随反应的进行而增大。     

TPD study of NH3 adsorption/desorption on the surface of V/Ti, V/Al based catalysts for selective catalytic reduction of Nox by ammonia 2. TPD test of commercial V/W/Ti, V/Al, Pd/V/Al catalysts

The effect of temperature on the adsorption/desorption of ammonia from the air mixture on the surface of commercial binary V/Al and ternary Pd/V/Al, V(0.65 wt.%) /W(6.73 wt.%) /Ti and V(1.8 wt.%) /W(7.3 wt.%) /Ti de-NO_x catalysts has been investigated by temperature-programmed desorption (TPD) method. The ability of the commercial catalysts to adsorb ammonia in the most stable surface species was shown to correlate well with their suppression of the NH₃ oxidation.