On the zero temperature statistics for the density of gap states of hydrogenated amorphous silicon

It is shown that one may obtain much larger value of density-of-states in the gap of hydrogenated amorphous silicon than real value, if the zero temperature statistics is used in studying that material. So care must be taken when one employs zero temperature statistics in studying the density-of-states of amorphous materials.     

The density of states in the mobility gap of halogenated amorphous silicon

Summary The density of states in the mobility gap of halogenated amorphous silicon has been measured by the field effect technique. The results are discussed to shed light on the reality of a peak found in the DOS. A comparison is made with the DOS curves obtained by SCLC in the same material. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

A study of the density of gap states in amorphous semiconductors from thermostimulated conductivity spectra

A theoretical analysis of thermostimulated conductivity spectra _TSC(T) has been applied to determine the density of gap states g(E) in a-Si: H and a-Si: H/a-SiN _x : H multilayer structures. The results for g(E) are consistent with the results deduced from Fritzsche's analytical approach as well as other methods. A comparison has been made between the two different analytical approaches for _TSC(T). We discuss the relationship between the energy of maximum thermostimulated current emission E _m and quasi-Fermi level E _q. We demonstrate that E _q could be a better parameter than E _m in the general theoretical treatment of thermostimulated conductivity.     

Electronic behaviors of the gap states in amorphous semiconductors

An extension of the Adler-Yoffa's calculation on the localized gap states in amorphous semiconductors has been made with a more realistic model which takes into account an influence of the diffused gap states and impurity states. A considerable large difference in the electron occupation probability of the gap states with sign of the correlation energy U has been examined on the tetrahedrally bonded and chalcogenide glasses. Variations of the Fermi level as a function of doped impurity concentration and gap state density have been studied.     

Correlation effects and the density of states in amorphous silicon

The evaluation of the density of gap states from the charge density measured in field-effect experiments is considered in terms of a model which incorporates electron correlation effects. Due to the positive Hubbard U a density of states is deduced which differs appreciably from the “field effect” densities published previously. Besides the lack of the E_x and E_y peaks the minimum density is found to be ～ 10¹⁵ ? 10¹⁶ cm^?3 eV^?1.     

Chemical trends for localized gap states in amorphous semiconductors

The absence or presence of unpaired spin and of variable range hopping due to the localized gap states (dangling bond states) in various amorphous semiconductors is explained based on the chemical nature of constituent atoms and randomness of the glass structure. The randomness is also correlated with optical absorption data.     

Spin-polarized electronic density of states in amorphous iron

The spin-polarized electronicd-band density of states in amorphous iron are reported using recursion method. The magnetic moment of amorphous iron is found to be almost as high as BCC iron. This lends support to the view expressed by Kemény et al. that the extrapolation of experimental results obtained on samples containing less than 2% impurities to deduce the magnetic moment of pure amorphous iron may not be justified.     

Amorphouslike density of gap states in single-crystal pentacene

We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular orbital-lowest unoccupied molecular orbital band gap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field-effect transistors fabricated from similar crystals imply that the gap state density is much larger within 5-10 nm of the gate dielectric. Thus, organic thin-film transistors for such applications as flexible displays might be significantly improved by reducing these defects.     

Urbach edge and the density of states in hydrogenated amorphous silicon

Photoconductivity measurements of the optical absorption edge and time-of-flight measurements of the hole drift mobility, on the same amorphous silicon film, enable us to identify the origin of the Urbach edge in amorphous silicon with the density of states in the valence band tail.     

Effects of annealing on gap states in amorphous Si films

Annealing behaviors of the activation energy for electrical conduction, the optical gap, and the spin density in amorphous Si are investigated. It is found that the Fermi level shifts downwards with the decrease of the spin density, increasing the decay length of the wave function of localized state at the Fermi level. The downward shift of the Fermi level suggests that the localized states in the upper energy region in the gap are annealed out more easily than those in the lower one.     

Urbach energy and the tails of the density of states in amorphous semiconductors

Formulas are derived for the Urbach energy as a function of the parameters controlling the slope of the exponential tails in the valence and conduction bands of amorphous semiconductors. It is shown that the Urbach energy remains constant, even if one of these parameters varies over a wide range.     

Critical temperature and energy gap in superconductors with singular density of states

The influence of-functional (symmetric as well as asymmetric) singularities in density of states (DOS) on the critical temperature and zero temperature energy gap is calculated. Surprisingly, we have obtained the same function for the off-symmetry of the peak position in DOS on the corresponding critical temperature as for the temperature dependence of the energy gap in the strong-coupling limit. The enhancement of the critical temperature due to the singularity (compared with the constant DOS near the Fermi surface) is much lower for strong-coupling superconductors than in the weak-coupling limit. Hence, the singularity in DOS cannot be the exclusive reason for large values of critical temperatures in highTc superconductors.This work was supported by the grant GA SAV 188/1991.     

Atomic tunneling states and low-temperature anomalies of thermal properties in amorphous materials

A general theory of local atomic non-single-well potential in amorphous materials is presented. It is shown that the potentials practically are critical double-well potentials with low spring constants. Two essentially different types of two-level tunneling states in such potentials are found. The spectral density of the states is shown to be smooth under realistic conditions. The respective specific heat logarithmically deviates from the linear temperature dependence and logarithmically or more weakly depends on the measurement time. Both types of the tunneling states can essentially contribute to the specific heat, whereas one of the types is rather more strongly coupled with phonons and determines the phononic thermal conductivity. Some other questions are also discussed.     

Electronic density of states of amorphous III–V semiconductors

A short-range disorder model is used to predict the predominant features of the density of states of amorphous III–V semiconductors. Confirmation of this model would help establish the existence of III-III and V-V bonds in these materials.     

Experimental elucidation of hydrogen local density of states in hydrogenated amorphous silicon

Ultraviolet and X-ray photoemission spectroscopies (UPS and XPS) are used to study the valence band in device quality hydrogenated amorphous silicon films (s-Si:H). Their results are combined to obtain estimated information about the hydrogen local density of states (HLDOS). The monohydride bonding configuration and the occurence of interhydride bonding between H atoms are confirmed by the experimental data.     

Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene

The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.