Infrared Magneto-Optical Absorption of Shallow Donors in GaAs/GaAsAl Quantum Dots

Infrared magneto-optical absorption spectra of shallow donor impurity states in GaAs/Ga-AsAl quantum dot are investigated theoretically using the effective-mass, approximation within the strong confinement regime. The numerical results show that for high magnetic fields, the transition energies for (0, 0) + (0, 1) increase linearly with enhancement of magnetic field strength, while the transition energies for (0, 0) → (0, -1) appear to diminish with increasing magnetic field strength.     

低补偿度n-Hg1-xCdxTe的磁致金属-绝缘体相变和相变后的温度激活输运行为

报道了ｘ＝０．２１４组份、低补偿度（Ｋ《１）ｎ－Ｈｇ_1-xＣｄ_xＴｅ晶体在０．３─３０Ｋ温度范围，０─７Ｔ强磁场下的横向磁阻、电子霍耳迁移率、霍耳系数测量结果，观测到了磁致金属－绝缘体相变和相变后的温度激活输运行为。分析实验数据，提出：低补偿度、组份：ｘ＝０．２附近的ｎ－Ｈｇ_1-xＣｄ_xＴｅ，磁致金属－绝缘体相变（ＭＩＴ）发生的机理是载流子在浅施主杂质态上的磁冻结；发生磁冻结的前提是热冻出（ｔｈｅｒｍａｌ ｆｒｅｅｚｅ 关键词：     

Powder Pattern Hyperfine Spectroscopy of Shallow- Donor Muonium Centres

The hyperfine spectroscopy of muonium in II–VI semiconductors is reviewed, suggesting that whereas hydrogen is a deep-level defect in ZnS, ZnSe and ZnTe, it constitutes a shallow donor in ZnO, CdS, CdSe and CdTe. Shallow and deep states coexist in CdTe. Using new data for ZnO, it is shown that the principal values of the muonium hyperfine tensor may be obtained with equal facility from measurements in longitudinal or in transverse magnetic field, and from samples that are polycrystalline powders or single crystals. Spin density on the central muon in the shallow states correlates with the electron binding energy or donor depth. This revised version was published online in September 2006 with corrections to the Cover Date.     

Charged excitons in quantum dots: novel magnetic behavior and Auger processes

We describe theoretically multiply-charged excitons interacting with a continuum of delocalized states. Such excitons exist in relatively shallow quantum dots and have been observed in recent optical experiments on InAs self-assembled dots. The interaction of an exciton and delocalized states occurs via Auger-like processes. To describe the optical spectra, we employ the Anderson-like Hamiltonian by including the interaction between the localized exciton and delocalized states of the wetting layer. In the absence of a magnetic field, the photoluminescence line shapes exhibit interference effects. When a magnetic field is applied, the photoluminescence spectrum demonstrates anticrossings with the Landau levels of the extended states. We show that the magnetic-field behavior of charged excitons is very different to that of diamagnetic excitons in three and two-dimensional systems.     

Spin-flip Raman scattering from electrons in localized donor states in n-InSb

We report the first observation of spin-flip Raman scattering from electrons localized in shallow donor states in InSb. For a non-degenerate n-InSb sample (8×10¹³ cm^-3) measurements of the spin-flip Raman gain and the effective g-value as a function of the magnetic field show lineshapes and magnetic field dependences completely different to that of an InSb sample with the electron gas being in a degenerate regime (1.35×10¹⁵ cm^-3). For the 8×10¹³ cm^-3 InSb sample, at magnetic fields greater than 11.5 kG, a splitting of the spin-flip Raman line into two lines is observed which may be an indication that two shallow donor states with different effective g-values are concerned.     

Photothermal ionization fourier transform spectroscopy of shallow donor states in III–V semiconductors

The technique of photothermal ionization Fourir transform spectroscopy of shallow donors is very useful for the detection and identification of residual impurity species in very high purity compound semiconductors, especially GaAs. However, the use of this technique in less pure or intentionally doped samples has resulted many incorrect impurity identifications. In this paper we show how the photothermal ionization spectra change with impurity concentration, thickness, and magnetic field, and present a model of the dielectric response of shallow impurity states which explains many of the previously anomalous results.     

Intensities of the line and photoionization spectra of shallow nonhydrogenlike impurities in semiconductors

Numerical nonvariational methods are proposed for the calculation of energies and wave functions of bound states, ground state wave functions with the account of central cell corrections, and the orthonormalized wave functions of the continuous spectrum of nonhydrogenlike shallow impurities in semiconductors. A number of different spectral characteristics is calculated for donor impurities in Ge and Si and for acceptor impurities in Ge and GaAs. The theory of photofield ionization i.e. tunnel ionization of an optically excited impurity atom is presented for shallow donors with the account of the effective mass anisotropy. The possibility of the observation of the line spectrum (due to transitions to shallow Coulomb excited levels) of a deep impurity in the presence of a high magnetic field is shown.     

Negative FIR-photoconductivity in n-GaAs

Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm^–1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental results is proposed, which involves optical transitions from the lowest Landau subband to higher bound states of shallow donors.     

Study of shallow impurity states in compound semiconductors using high resolution photoluminescence spectroscopy

In this paper we review briefly the use of high resolution photoluminescence to study the behavior of shallow impurity states in compound semiconductors. As an illustration we focus our review on GaAs. The binding energies of the ground state and of several low-lying excited states of the impurity centers are determined by studying the radiative transitions associated with excitons bound to neutral donors or acceptors. The difference between the binding energies of different donors in GaAs is rather small. Thus to resolve transitions associated with different chemical donors a magnetic field is used. This has the effect of sharpening the transitions as well as increasing the separation between them. One can identify donors in samples with total impurity concentrations as high as 5X10¹⁵/cm³. The binding energies of different chemical acceptors in GaAs are much higher. Thus the radiative transitions associated with excitons bound to neutral acceptors can be resolved in zero magnetic field. Energy levels of shallow donors and acceptors in GaAs are reviewed.     

Fine structure of shallow donor lines in germanium induced by magnetic field

Photoconductivity spectra of Ge doped with Sb and P were investigated in a magnetic field (H) at the temperature T = 4.2K. Measurements were performed in the Voigt configuration (H ∥ [111]). Fine structure of lines connected with optical transitions from the ground to the excited states of shallow donors due to spin splitting of impurity energy states were observed.     

A new method for calculating the Zeeman split acceptor levels in cubic semiconductors

Within the effective-mass approximation we introduce a transformed hamiltonian for the acceptor problem in a homogeneous magnetic field. The new hamiltonian is expressed entirely in terms of spherical tensor operators. The reduced-matrixelement technique can thus be used in solving variationally the eigenvalue problem. In this way a simple non-perturbation numerical calculation of the Zeeman split acceptor states becomes for the first time feasible. As a preparatory test for the method we used the new hamiltonian in a variational “model” calculation with a very restricted basis set, to calculate the linear Zeeman parameters for some excited states of shallow acceptors in Ge and GaAs. The results can be compared with recent experimental data for these materials. We find already an excellent numerical agreement between the calculated and the measured linear Zeeman parameters for the final states of the D-transitions, and we obtain the correct order of magnitude for those of the C-line final states.     

Threading dislocation densities in semiconductor crystals: A geometric approach

In this Letter, we introduce a geometric model to explain the origin of the observed shallow levels in semiconductors threaded by a dislocation density. We show that a uniform distribution of screw dislocations acts as an effective uniform magnetic field which yields bound states for a spin-half quantum particle, even in the presence of a repulsive Coulomb-like potential. This introduces energy levels within the band gap, increasing the carrier concentration in the region threaded by the dislocation density and adding additional recombination paths other than the near band-edge recombination.     

Fir spectroscopy on shallow donor states in GaAs:Si

Far infrared spectroscopy experiments on the shallow donor states of GaAs:Si are presented. Transitions between shallow donor levels are induced by F.I.R. radiation from an optically pumped molecular gas laser. The measurements are performed by measuring the electrical conductivity of the GaAs:Si sample at fixed laser frequencies by sweeping an external applied magnetic field up to 12 T. In total about 30 different transitions are observed using radiation between 60 m and 1.8 mm. In low magnetic fields and at high frequencies a series of photoconductivity signals are observed, which we ascribe to transitions from the ground state towards bound donor levels with hydrogen quantum numbers n, l=n–1, and m=n–1.     

Manipulation of atom-to-molecule conversion in a magnetic lattice

Atom-to-molecule conversion by the technique of optical Feshbach resonance in a magnetic lattice is studied in the mean-field approximation. For the case of a shallow lattice, we give the dependence of the atomto-molecule conversion efficiency on tunnelling strength and atomic interaction by taking a double-well as an example. We find that one can obtain a high atom-to-molecule conversion by tuning the tunnelling and interaction strengths of the system. For the case of a deep lattice, we show that the existence of the lattice can improve the atom-to-molecule conversion for certain initial states.     

Magnetic surface levels

As is well known, the energy spectrum of conduction electrons in a metal in a magnetic field is split into the Landau levels. These levels give rise to several phenomena whose essence is in the oscillatory dependence of some property of the metal characteristics on the strength of the magnetic field, in the range of strong and medium fields. Of these the most famous are the de Haas-van Alphen effect, and the Shubnikov-de Haas effect. Electronic transitions between the Landau levels give rise to the cyclotron resonance.

In a surface layer of a metal placed in a weak magnetic field another system of levels appears for electrons moving along shallow arcs, with their ends resting upon the surface of the metal. These levels originate from the quantized periodic motion of electrons along such ‘skipping’ trajectories due to a specular reflection at the metal surface. The spectrum of the system of magnetic surface levels manifests itself in an oscillatory dependence of the surface impedance on a weak magnetic field. The oscillations are due to a resonant absorption of microwave radiation in transitions of electrons between the magnetic levels occurring at discrete values of the magnetic field.

This new quantum effect discovered in several metals in both the normal and superconducting states should, in principle, be common to all the conductors. Studies of the effect are being extended rapidly, and one foresees a discovery of some new phenomena due to the surface bound states of charged quasiparticles, arising in a conductor when exposed to a weak magnetic field.     

1 s–2 p ± transitions between hydrogenic states in GaAs low-dimensional systems under external fields

A variational formalism for calculating the binding and the transition energies between 1 s - and 2 p _± -like states of a shallow donor in cylindrical pills of GaAs low-dimensional systems, under the action of the electric and magnetic fields applied in the axial direction, is presented. Results were obtained for several values of the magnetic field as a function of the system geometry and the applied electric field. Within the two-dimensional limits, the theoretical results for the 1 s– 2 p ₊ transition energies are in good agreement with infrared-magnetospectroscopy measurements on donor doped quantum-wells.     

Zeeman splitting of excited boron states in p-Ge

The photothermal spectrum of shallow acceptors in p-Ge has been investigated at various magnetic field strengths up to 5.6 T at a temperature of 7.5 K by FIR-Fourier-spectroscopy. From the observed Zeeman splittings of the excited states of the boron acceptor the coefficients of the linear and quadratic field dependence have been evaluated andg-factors of theD-,C- and theG-transitions have been determined based on a standard group theoretical approach.     

Charge and energy transfer in double asymmetric quantum wells with quantum dots

The luminescence and luminescence excitation spectra of CdSe/ZnSe quantum dots are studied in a set of double quantum wells with the ZnSe barrier of width 14 nm, the same amount of a deposited CdSe layer forming a deep well and shallow wells with different depths. It is found that for a certain relation between the depths of shallow and deep wells in this set, conditions are realized under which the exciton channel in the luminescence excitation spectrum of a shallow well dominates in the region of kinetic exciton energies exceeding 10 longitudinal optical phonons above the bottom of the exciton band of the ZnSe barrier. A model is developed for the transfer of electrons, holes, and excitons between the electronic states of shallow and deep quantum wells separated by wide enough barriers. It is shown that the most probable process of electronic energy transfer between the states of shallow and deep quantum wells is indirect tunneling with the simultaneous excitation of a longitudinal optical phonon in the lattice. Because the probability of this process for single charge carriers considerably exceeds the exciton tunneling probability, a system of double quantum wells can be prepared in which, in the case of weak enough excitation, the states of quantum dots in shallow quantum wells will be mainly populated by excitons, which explains experimental results obtained.     

磁场下半导体GaAs/AlxGa1-xAs异质结中的杂质态

对异质结势采用三角势近似,考虑屏蔽效应,用变分法讨论磁场下半导体异质结系统中的施主杂质态,数值计算了GaAs/AlxGa_1-xAs单异质结系统中杂质态结合能随磁场的变化关系。结果表明,由于外界磁场使界面附近束缚于正施主杂质的单电子波函数的定域性增强,从而对杂质态的结合能有明显的影响,结合能随磁感应强度的增强而显著增大。还计算了杂质位置、电子面密度产生的导带弯曲以及屏蔽效应诸因素对结合能的影响。结果显示,结合能对电子面密度和杂质位置的变化十分敏感,屏蔽则使得有效库仑吸引作用减弱而导致结合能明显下降。