F-Zentren und Kolloide in der amorphen,hexagonalen und kubischen Phase von LiJ

By simultaneous evaporation of LiI and Li onto a cooled substrate F centers can be produced in the hexagonal (78 K<T _K <200 K) and amorphous (T _K <78 K) phase of one and the same salt. In both modifications there exist two types of centers F and F^*. The F^* center differs from the cubic F center (T _d -symmetry) by a nearby Frenkel defect. In hexagonal films the normal F band peaks at 2.58 eV, whereas the transitions of the F^* center appear at 2.92 and 2.58 eV too. Polarized irradiation at 20 K causes a dichroic behaviour of the F^* centers. Both types of centers can be transformed into one another photochemically. In the amorphous phase all transitions are shifted to lower energies by about 0.1 eV. After the phase change amorphous→hexagonal the absorption bands shift back by the same amount of energy. AboveT _K =230 K the excess metal forms colloids. The absorption bands are due to colloidal centers embedded in the crystalline material (2.25 eV) and films adsorbed to the crystallites (3.1 eV), respectively. By annealing a particle growth can be observed. After electrolytic colouration cubic single crystals of LiI exhibit an absorption band peaking at 2.36 eV. However, it is not yet sure, if this band is allowed to be ascribed to F centers.     

Supraleitung und Temperverhalten abschreckend kondensierter Germanium-Edelmetall-Legierungen

Thin films of Ge-Cu, Ge-Ag and Ge-Au alloys have been condensed onto substrates held at 4 K. An amorphous, metallic phase has been obtained. The superconductivity of this phase is believed to be due to Ge which is forced into a liquidlike structure with a higher coordination number than that of the semiconducting diamond structure. The maximum transition temperatures of the Ge-Cu and Ge-Au films are 3.3 and 3.6 K, respectively, whereas Ge-Ag films show a maximumT _c of 1.2 K. The difference inT _c is explained by the band structure of the noble metals.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Photoelectric and optical properties of thin films of ternary chalcogenides of the form MeISbX 2 VI

We have studied the photoconductivity and optical absorption of thin amorphous films of ternary chalcogenide compounds of the type Me^ISbX ₂ ^VI (where Me is Na, K, Rb and X^VI is either S or Se) produced by thermal evaporation in a vacuum. The band gaps were determined by various methods. A regular increase in band gaps in the films was noted as the atomic number of the alkali metal increased.     

Formation of Ge35In8S57 amorphous films for optical applications

Thin films of In-doped Ge-S in the form of Ge₃₅In₈S₅₇ with different film thickness were deposited using an evaporation method. The X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature for these films. Some optical constants were calculated at a thickness of 150, 300, 450 and 900?nm and annealing temperature of 373, 413, 437 and 513?K. Our optical observations show that the mechanism of the optical transition obeys the indirect transition. It was found that the energy gap, E_g, decreases from 2.44 to 2.20?eV with expanding the thickness of the film from 150 to 900?nm. On the other hand, it was found that E_g increases with annealing temperature from 373 to 513?K. The increment in the band gap can be attributed to the gradual annealing out of the unsaturated bonds delivering a decreasing the density of localized states in the band structure. Using the single oscillator model, the dispersion of the refractive index is described. The dispersion constants of these films were calculated with different both thickness and annealing temperatures. Additionally, both of nonlinear susceptibility, χ⁽³⁾ and nonlinear refractive index, n₂ were calculated.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Mechanochemical penetration of helium atoms into Pd84.5-Si15.5 and Ni78-Si8-B14 eutectic amorphous films extended in liquid 3He and 4He

The penetration of helium atoms into amorphous films extended to fracture in liquid helium has been investigated. It is found that helium atoms penetrate into the eutectic alloy films Pd_84.5-Si_15.5 in ³He (T=0.5 K) and Ni₇₈-Si₈-B₁₄ in ⁴He (T=4.2 K). The spectra of helium liberation from these materials after deformation are obtained upon dynamic (4–5 K/min) annealing at T=293–1323 K. The maximum amount of helium is observed in the regions of local plastic microshears running across the whole width of films and also in the sample regions containing fracture macrocracks and isolated groups of slip bands. The spectra of helium liberation from different regions of destroyed samples show several peaks that correlate with the temperatures of crystallization and melting of the studied films. The data obtained are interpreted within the model of mechanochemical penetration of helium atoms through the dynamically excited dislocation-like defects, which are typical of the amorphous films under consideration.     

Investigation of nonlinear optical parameters of zinc based amorphous chalcogenide films

Third order nonlinear optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films have been investigated using single beam transmission z-scan technique at 1064 nm of Nd:YAG laser. Measurement of optical properties of amorphous Zn_x–S_y–Se_100−x−y chalcogenide films prepared by thermal evaporation technique has been made. X-ray diffraction patterns of chalcogenide films confirm the amorphous nature. Optical band gap (E_g) has been estimated using Tauc's plot method from transmission spectra that is found to decrease with increase in content due to valence band broadening and band tailing the system. Nonlinear refractive index (n₂), nonlinear absorption coefficient (β) and third order nonlinear susceptibility (χ³) of chalcogenide films have been estimated. Self-focusing effect has been observed in closed aperture and reverse saturable absorption in open aperture scheme. Limiting threshold and dynamic range have been calculated from optical limiting studies. The increase in nonlinearity with increase in Zn content has been observed that is understood to be due to decrease in band gap on Zn doping. High nonlinearity makes these films a potential candidate for waveguides, fibers and two photon absorption in optical limiters.     

Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, E_g, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10⁶-10⁷ Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10² Ω cm were observed in the optical band gap, E_g, and electrical resistivity, respectively.     

Rare earth-transition metal compound-based MOSLM for the visible spectral range

We have demonstrated a magneto-optical spatial light modulator in which functionality is realized by (i) heating up to Curie temperature (T_c) magneto-optical elements (pixels) with a semiconductor laser and (ii) application of a switching magnetic field. The pixels were made of films of amorphous rare earth-transition metal compounds (TbFe films with T_c=403 K and DyFe films with T_c=343 K) having good magneto-optical responses for wavelengths from the visible spectral range. We have found that the magnetization direction of pixels can be modulated with a laser radiation density of 5 mJ/cm² and in a switching magnetic field of 15 Oe.     

Far infrared absorption in bulk amorphous red phosphorous

Far infrared absorption measurements have been performed above 30 cm^?1 in bulk amorphous red P at 300 K. A number of low frequency spectral features are observed that are not present in the corresponding bulk amorphous As spectrum. Deep minima observed at 163 and 320 cm^?1 in α(ω) and in the Raman spectra suggest that the phonon density of states is essentially divided into 3 bands. A calculation of the mean effective charge of the bands indicates weak coupling to the lowest frequency band. A comparison with the results in a-As suggests a less rapid frequency variation in the infrared coupling parameter at low frequencies in a-$\text{P}$.     

Farbzentren und Kolloide in abschreckend kondensierten Schichten von NaJ,CaF2 und SrCl2

By a simultaneous evaporation of NaI with excess alkali or alkaline earth metal onto a cooled substrate (T _K =20–150 K) highly disordered thin films are produced, which contain electron excess centers up to a concentration of more than 10²⁰ cm^?3. A complex optical absorption band peaking at 600 and 530 nm is found. The 600 nm band is mainly due to unperturbed F centers, whereas the 530 nm band is ascribed to perturbed F centers, whose symmetry is lowered to C_3v by a nearby Frenkel defect. Another optical transition of this F* center appears at about 600 nm in the dichroic spectrum, which is induced by polarized illumination at 20 K. The transition energies of the F* center are calculated by means of a semi-continuum model. A photochemical transformation of F* and F centers into one another is possible at 20 K. AboveT _K =220 K the excess metal is forming colloidal centers. Two absorption peaks at about 600 and 400 nm, respectively, are ascribed to different colloids, which are either embedded in the crystalline material (600 nm) or only adsorbed to the crystallites (400 nm). By annealing up to 350 K a particle growth and transformation take place. Amorphous quenched films of CaF₂ and SrCl₂ with excess alkaline earth metal reveal mainly colloidal absorption (except a weak F band in CaF₂). The colloids disappear by annealing above 150 K. This is believed to be closely connected with the crystallisation of the films.     

Polycrystalline films of PbS prepared by reactive evaporation

PbS films have been prepared by reactive evaporation for the first time. Films prepared onto room temperature substrates are amorphous in nature. Increase in substrate temperature makes the films polycrystalline. These films are p-type. Hall effect measurements show that the films have a carrier concentration of ≈ 6 × 10¹⁷ cm⁻³ and that the mobility is temperature activated. These films show high thermoelectric power.     

Tuning the properties of tin oxide thin films for device fabrications

Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500?^°C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using ⁶⁰Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV–vis spectroscopy and I–V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.     

A reassessment of the vibrational spectrum of hydrogenated amorphous silicon

Paul [1] has cogently argued the case against the exclusive assignment of the 2100 cm^-1 band in the vibrational spectrum of hydrogenated amorphous silicon to =SiH₂ complexes. Data are presented in the present paper which make the grounds for dissent from the dihydride model less securely based. We assert that, for as-prepared r.f.a-Si films, the contribution to the 2100 cm^-1 band intensity from alternative structures is not as significant as hitherto proposed.     

非晶Nd-Fe薄膜电阻的温度效应与非晶稳定性

用闪光蒸镀法在77K制备了Nd_xFe_1-x(x=0.06-0.80)非晶薄膜,原位测定了其电阻随温度的变化。结果表明:在0.192和ρ(T)∝T。晶化不是在一个固定的温度,而是在一个温度区间发生。     

Structural,optical and electrical properties of laser irradiated Pb doped Ga–Se chalcogenide thin films

Using the Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser, we had irradiated the amorphous thin films of Ga₁₀Se₈₁Pb₉ chalcogenide glass and the results have been discussed in terms of the structural aspects of Ga₁₀Se₈₁Pb₉ glass. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap. The X-ray structural characterization revealed the amorphous nature of as prepared films and polycrystalline nature of the laser irradiated films. The optical band gap of these thin films is measured by using the absorption spectra as a function of photon energy in the wavelength region 400–1200 nm. It is found that the optical band gap decreases while the absorption coefficient increases with increasing the irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase in exposure time. The dc conductivities and activation energies of these thin films are measured in temperature range 303–403 K. It has been found that the activation energy in Ga₁₀Se₈₁Pb₉ chalcogenide thin films decreases whereas the dc conductivity increases at each temperature by increasing the irradiation time.     

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

We report on the temperature dependences of the optical gap E_o and the photoconductivity threshold (?ω)_o for undoped hydrogenated amorphous silicon films. When increasing the temperature, both E_o and (?ω)_o are seen to linearly decrease at respective rates β= 3.5 10^?4 eV K^?1 (temperature range 290 K–460 K) and γ= 5.2 10^?4 eV K^?1 (temperature range 220 K – 360 K). At higher temperatures E_o decreases at the rate β = 14.3 10^?4 ev K^?1. Our results are discussed in terms of conduction in extended states. We show there is no physical reason in relating the temperature dependence of the activation energy and that of the gap as generally assumed. From optical absorption we deduce a minimum metallic conductivity σ_min the value of which agrees with Mott's predictions. On the contrary, σ_min measured from dark conductivity is nearly two orders of magnitude lower. A discussion is proposed infering band bending at the film substrate interface.     

Structural stability and electrical conductivity of amorphous Ge-metal alloy films

Stable homogeneous amorphous alloy¹ films of Ge with different concentrations of Al, Cu and Fe have been prepared by the simultaneous vapor deposition technique. Ge-Metal films are amorphous up to a concentration of ～ 40 at.% Al, ～ 20 at.% Cu and ～ 20 at.% Fe. The cyclic annealing and crystallization temperature of these films show that whereas Al increases the stability of the amorphous phase, the addition of Cu and Fe decreases it. The electrical resistivity decreases gradually with increasing Al content. In contrast, a rapid decrease in the electrical resistivity is observed for the Ge-Cu and Ge-Fe systems. The thermoelectric power (TEP) of Ge-Cu and Ge-Fe system assumes small values ～ few μV/deg for concentrations greater than few atomic percent. Ge-Al system exhibits large positive thermoelectric power at all compositions. The temperature dependence of the electrical resistivity of these alloy films show that the addition of Cu and Fe to Ge results in a drastic decrease in the activation energy of conduction whereas the addition of Al increases the activation energy. Ge-Al films exhibit intrinsic like conduction in the temperature range 100–300 K. The Ge-Cu and Ge-Fe films exhibit hopping conduction from 100–300 K and the related density of states is up to 100 times larger than in pure a-Ge films.     

Room temperature photoluminescence from amorphous silicon nanoparticles in SiOx thin films

Amorphous SiO_x thin films with four different oxygen contents (x=1.15, 1.4, 1.5, and 1.7) have been prepared by thermal evaporation of SiO in vacuum and then annealed at 770 or 970 K in argon for various times ?40 min. The influence of annealing conditions and the initial film composition on photoluminescence (PL) from the annealed films has been explored. Intense room temperature PL has been observed from films with x?1.5, visible with a naked eye. It has been shown that PL spectra of most samples consists of two main bands: (i) a ‘green’ band centered at about 2.3 eV, whose position does not change with annealing conditions and (ii) an ‘orange-red’ band whose maximum moves from 2.1 to 1.7 eV with increasing annealing time and temperature and decreasing initial oxygen content. These observations have been explained assuming recombination via defect states in the SiO_x matrix for the first band and emission from amorphous Si nanoparticles for the second one.