Photoquenching effect and its consequence in p type gallium arsenide

In order to examine the origin of the occasionally observed shift in the photoconductivity peak with respect to the band gap value; optical and electro-optical investigation of a p type GaAs crystal was carried out. The absorption and photochonductivity spectra were recorded and by comparing both spectra, a model based on the transition of electrons from the oxygen “adsorbate surface states” is proposed to explain the strong photoquenching observed on the high energy side of the band gap value. This also explains the observed shift.     

Optical properties of GaAs1−x N x alloys grown by molecular beam epitaxy

Optical properties of GaAs_1?x N _x alloys grown by molecular beam epitaxy using GaAs (001) as the substrate have been studied. These include photoluminescence (PL), cathodoluminescence (CL), photocurrent and photomemory effects. The low-temperature (77?K) PL characteristics were measured on samples with 0–0.105% N content. The wide emission band indicates the defective nature of the materials. The widening of the band for materials with increasing nitrogen concentration also suggested that the concentration of defect states in these materials dramatically increased with increasing nitrogen content. The PL and CL spectra for GaAs_1?x N _x layer 1854 did not show identical characteristics. Some layers showed a very sharp fall in photocurrent at low temperatures, indicating a very sharp photoquenching and an interaction between antisite, interstitial and vacancy defects. The photomemory effect, which causes photoquenching and the transition from the EL2 to the EL2? metastable state, was strongly influenced by the optical exposure and thermal history of the sample.     

Excitonic emission in highly excited lead iodine

Excitonic luminescence in PbI₂ has been investigated in the temperature range between 77 and 300°K under high excitation by a nitrogen laser. A single emission band is observed which, at low pumping, is centered at the free exciton energy. When the excitation intensity is increased, the band broadens and shifts towards lower energies. These facts are interpreted on the basis of an exciton-electron interaction.     

Temperature induced band gap shrinkage in Cu2GeSe3: Role of electron-phonon interaction

The ternary semiconducting compound Cu₂GeSe₃ has been investigated for optical properties with photoacoustic spectroscopy. Optical absorption spectra of Cu₂GeSe₃ is obtained in the range of 0.76-0.81 eV photon-energy at temperatures between 80 and 300 K. The thermal variation of band gap energy has been examined from the optical absorption spectra at different temperatures. The temperature induced band gap shrinkage has been explained on the basis of electron-phonon interaction. Varshni's empirical relation in conjunction with Vina and Passler model is taken into consideration for data fitting. The Debye temperature was calculated approximately as 240 K. The acoustic phonons with a characteristic temperature as 160 K corresponding to effective mean frequency have been attributed to the thermal variation of the energy gap.     

N23-core losses and autoionization emissions of clean and oxygen exposed zirconium

The electron energy loss spectra associated with N₂₃-excitation and the low energy N₂₃VV Auger emission have been studied for both the clean and oxygen exposed zirconium. In the high energy side of the N₂₃VV Auger spectrum, autoionization emission of electrons of the valence band due to the decay of 4p electrons excited to states ≈9eV above the Fermi level has been identified. The excitation process can be also observed in the electron energy loss spectra. This is the first time that an autoionization feature is observed in a electron excited Auger spectrum of a 4d transition metal.     

A study of LaH3 by auger electron appearance potential spectroscopy

The Auger electron appearance potential spectra (AEAPS) of M_4,5 levels of lanthanum in the elemental state and in LaH₃ are presented. AEAPS measures the total differential secondary electron yield from the surface constituents as a function of incident electron energy. In the presence of a 3d hole, the 4f level is pulled down below the Fermi energy, E_F. In the metallic La spectrum this is seen as a shoulder on the low energy side of the main peak, but in the LaH₃ spectrum this shoulder disappears and is replaced by two peaks, again on the low energy side. The high binding energy satellite reported in the M₅ level XPS spectra in La insulating compounds has been attributed to the lowering of the 4f level above the ligand band. Since no high binding energy satellite is observed in the M_4,5 level AEAPS of LaH₃, the lowest energy peak is assigned as the transition of the 3d electron to the 4f level pulled down below the hydrogen induced band. The other peak is related to the partially filled hydrogen induced band below E_F. Tentative energy level diagrams for these transitions are proposed.     

Thermoelectric power and ac conductivity of A-type Nd2O3

Measurement of thermoelectric power Θ of pressed pellets of A-type Nd₂O₃ from 550 to 1180K and electrical conductivity (σ) at dc, 50 Hz, 1.542 kHz and 3 kHz at different temperatures is reported. It is concluded that electrical conduction at high temperature (T>600K) in this solid is due to positive large polarons in O²⁻ : 2p (valence) band and negative intermediate polarons in Nd³⁺ : 5d (conduction band). The energy band gap of the solid has been found to be 2.44 eV. At low temperatures, conduction by hopping of charge carriers from one impurity centre to another has been predicted.     

Can ultrasonic sound attenuation measurements elucidate the coupling of “Heavy electrons” to the lattice?

An unusual peak has been found by Müller et al. for the attenuation of longitudinal sound as a function of temperature around 12 K for UPt₃. Breathing mode coupling of the volume strain to the electronic energy states of a narrow band of high density at the fermi energy seems to be the origin of this peak.     

Optical properties and band structure of a layered Tl2S crystal

The optical absorption spectra of a layered Tl₂S crystal have been studied at T = 293 K. In has been found that the fundamental absorption edge has an exponential shape in all samples under study. The ab initio calculations of the energy band structure of Tl₂S have been performed in terms of the density functional theory for the first time. Based on the complementary analysis of the results of the optical measurements and calculation of the energy band structure of the material, the model of formation of the exponential fundamental absorption edge of the layered semiconductor Tl₂S has been proposed.     

High temperature heat capacity of the LaSn3 and CeSn3 compounds

The high temperature heat capacities of LaSn₃ compound and CeSn₃ intermediate valence compound have been obtained from enthalpic contents measurements, using the technique of drop calorimetry in the 400–1200 K temperature range.The heat capacity behaviour of CeSn₃ has been compared with that of LaSn₃ and the quantitative difference between the two trends is explained in terms of residual promotional energy of the 4? electron of Ce to the conduction band.     

Low energy photoelectron spectroscopy on alkali graphite intercalation compounds

The conduction band of various stages of alkali graphite intercalation compounds has been studied by low energy photoelectron spectroscopy (hv ? 6.55 eV). The dissimilar behaviour of the width β of the conduction band peak as a function of photon energy for C₆Li and C₈M (M = K, Rb, and Cs) is discussed in terms of different band types in the vicinity of the Fermi level. The stage dependence of β is measured and interpreted for the system C_xK (for stages 1, 2, 4, and 5).     

Temperature study of interband Γ6→Γ8 magnetoabsorption in HgSe

The magnetoabsorption experiments have been performed on HgSe samples at several temperatures between 10 and 80 K in magnetic fields up to 70kG. Because of an anomalous structure of the Γ₆ valence band, which is due to the small value of the spin orbit splitting Δ, several anomalous features have been observed. The interpretation of the results is based on the many level model of Pidgeon and Brown. A set of band parameters and the energy gap dependence on temperature has been found.     

Raman detection of phonon-phonon coupling in GaxIn1−xP

The coupling between the zone center phonons and continua has been observed and interpreted from the changes in the line shape of the TO Raman spectra and the existence of a side band on the low energy side of the LO phonon in mixed Ga_xIn_1?xP.     

In0.15Ga0.85As—GaAs应力层多量子阱中束缚子带—连续带跃迁

在10—300K温度范围,研究了稳态发光二极管(LED)辐照对15周期的In_0.15Ga_0.85As(8nm)-CaAs(15nm)应力层多量子阱的光电流谱的影响。各跃迁过程对应的光电流峰的强度随LED光强的增大而减弱,并且具有不同的变化规律。据此可区分出束缚子带和连续带间的跃迁及其亚结构,并由跃迁的能量位置,直接确定导带和价带的不连续量,得出重空穴价带的能带台阶Q_v=0.38±0.01。 关键词：     

Electronic absorption spectrum of Cs<Subscript>2</Subscript>ZnI<Subscript>4</Subscript> thin films

The absorption spectrum of Cs₂ZnI₄ thin films in the energy range 3–6 eV at temperatures from 90 to 340 K has been investigated. It is established that this compound belongs to direct-gap insulators. Low-frequency exciton excitations are localized in ZnI₄ structural elements of the lattice. Phase transitions at 280 K (paraelectric phase ? incommensurate phase), 135 K (incommensurate phase ? monoclinic ferroelastic phase), and 96 K (monoclinic phase ? triclinic ferroelastic phase) have been found from the temperature dependences of the spectral position and halfwidth of the low-frequency exciton band. Additional broadening of the exciton band is observed for ferroelastic phases; it is likely to be due to exciton scattering from strain fluctuations near domain walls.     

Cd1-xMnxTe混晶的远红外吸收光谱

本文报道4.2—300K和20—400cm^-1范围内不同组份的Cd_1-xMn_xTe混晶远红外声子吸收光谱的研究结果。实验分辨了类CdTe,类MnTe剩余射线带及其TO-LO分裂,首次观察到位于混晶剩余射线吸收区内侧的低频吸收带、低x值情况下的准定域模吸收峰及其两侧的诸双声子吸收带。用缺陷晶格动力学理论估计了准定域模的出现及位置,讨论了其他吸收带的物理起源和判定。 关键词：     

Transport properties of CdIn2S4 single crystals

Several transport properties have been studied on CdIn₂S₄ singlê crystals with different degrees of deviation from stoichiometry. The energy gap at 0 K was determined from the electrical measurements to be 2.2 eV. The anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions in k space. From an analysis of the mobility data it was found that the high resistivity of the samples is due to compensation of donors by acceptors introduced by excess sulphur. Several band parameters, the carrier scattering mechanisms and the impurity levels were determined. The thermal conductivity was measured from 4 K to 300 K and analysed by Callaway's formalism.     

Low-temperature photoluminescence in CuIn<Subscript>5</Subscript>S<Subscript>8</Subscript> single crystals

Photoluminescence (PL) spectra of CuIn₅S₈ single crystals grown by Bridgman method have been studied in the wavelength region of 720–1020 nm and in the temperature range of 10–34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5– 60.2 mW cm^?2 range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at 193 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal has been presented.     

Effect of Band Nonparabolicity on the Inter Band Tunneling in Semiconductors

A simple yet generalized theory is developed to study inter band tunneling property of narrow band gap III–V compound semiconductors. The band structures of these low band gap semiconductors with sufficiently separated split-off valance band are usually described by the three energy band model of Kane, so this has been adopted here for the analysis of interband tunneling property in the case of InAs, InSb, and In_1-xGa_xAs_yP_1-y lattice matched to InP as representative direct band gap semiconductors having varied split-off valence band compared to their bulk state band gap energy. It has been found that the magnitude of tunneling rate from heavy hole decreases with increasing band nonparabolicity and the impact is more significant at high electric field in the three-band model of Kane than those with simple parabolic energy band approximations reflecting the direct influence of energy band parameters on inter band tunneling transitions. With proper consideration of band nonparabolicity, the results of the analysis of tunneling rate of these narrow gap materials show significant deviations from the results when simple parabolic band approximation is considered. The exact physical basis of the sources of deviation in the nonparabolic case from the corresponding parabolic band approximations is discussed in association to band coupling effect, transverse energy dependence, and the interplay between them. Moreover, under certain limiting conditions, our results reduce to the well-known results of parabolic band approximation and thus providing an indirect test to the accuracy of our generalized formulations.     

Magnetic and electrical properties of zinc selenide crystals containing disorder

The electrical and magnetic properties of ZnSe single crystals containing disorder have been studied between temperatures 290K and 900K. The study of the magnetic properties has been extended to low temperatures (100K). Paramagnetism has been found to appear at high temperatures (460–900K). From the fact that this paramagnetism is proportional to e^?δE/kT, it is suggested that localized states of single occupancy are created by thermal excitation. The study of the magnetic properties has been of help in ascertaining the nature of the transport (band conduction or hopping conduction) and in finding the hopping energy and excitation energy separately. It has also been shown from this that both band conduction and hopping conduction exist simultaneously in the sample. A study of the thermo electric power (t.e.p.) shows that below 450K current is carried by electrons in the conduction band and above by hopping of holes.