Charge density wave transition and nonlinear conductivity in NbS3

We report dc conductivity (σ) measurements on the linear chain compound NbS₃. The temperature dependence of σ indicates a phase trànsition at T_MI = 155 K with strong one-dimensional fluctuations above T_MI. Below T_MI the conductivity is strongly increasing with increasing electric field above a threshold field E_T, and is also strongly frequency dependent. We argue that the nonlinear conductivity is due to sliding charge density waves.     

Structural and electrical characteristics of rare earth simple perovskite oxide La0.57Nd0.1Pb0.33Mn0.8Ti0.2O3

Polycrystalline La_0.57Nd_0.1Pb_0.33Mn_0.8Ti_0.2O₃ (LNPMT) is prepared by the solid-state reaction technique. The formation of single phase material was confirmed by X-ray diffraction studies, and it was found to be a rhombohedral phase at room temperature. The impedance plane plot shows semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to explain the impedance results. The frequency dependent conductivity spectra follow the universal power law. The activation energy deduced from analysis of the imaginary part of electric modulus and imaginary impedance is found to be ∼75 meV. Such a value of activation energy indicates that the conduction mechanism for the sample is due to electron hopping. The imaginary part of the electric modulus suggests that the relaxation describes the same mechanism at various temperatures.     

非晶态B2O3-0.7Li2O-0.7LiCl电导率频谱的研究

本文对非晶态快离子导体的B₂O₃-0.7Li₂O-0.7LiCl的电导率与外电场频率的关系进行了研究。结果表明:在较宽的频率范围内,样品的体电导约等于总电导;电导率频谱在中频段有一平台,在高频段上升,而且温度越高,开始上升的频率也越高。这一结果使电导率的测定有可能简化,即可以采用交流电桥法或在某一合适频率下采用交流伏安法直接测量样品的总电导或总导纳的模值作为体电导的值,从而求得电导率。本文考虑到非晶态结构的长程无序对离子迁移的影响,从局域极 关键词：     

Nonlinear conductivity of orthorhombic TaS3 under uniaxial strain: Kink versus charge-density-wave transport

The nonlinear conductivity in a Pierls state of orthorhombic (o-)TaS₃ is found to be depressed by small uniaxial strain and almost disappears at some temperature dependent value of a strain while being restored at higher deformations. The phenomena observed are hard to interpret in terms of sliding charge-density-wave (CDW) transport. A model attributing the nonlinear conductivity at high fields to the kink movement, accompanied by free carrier drag, is discussed. The model does account for strain dependence of the linear and nonlinear parts of conductivity, and some other properties of unstrained o-TaS₃ as well.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr0.25Ti0.75]O3 ceramic

In this work, we report the Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr_0.25Ti_0.75]O₃ ceramic synthesized by solid state reaction. This ceramic was characterized by X-ray diffraction, Rietveld refinement, scanning electron microscopy and energy dispersive X-ray spectrometry. Impedance spectroscopy analyses reveals a non-Debye relaxation phenomenon being its relaxation frequency moving toward to positive side with increase of temperature. A significant shift in impedance loss peaks toward higher frequency side indicates conduction in material and favoring the long range motion of mobile charge carriers. The frequency dependent ac conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of dc conductivity exhibited a negative temperature coefficient of resistance behavior. The ac conductivity data are used to evaluate the density of states at Fermi level and activation energy of this ceramic. The dc electrical and thermal conductivities of grain and grain boundary have been discussed.     

Dielectric properties for the ordered-perovskite cuprate Sr2Cu(Re0.69Ca0.31)O6

Dielectric properties are reported on polycrystalline cubic ordered-perovskite cuprate Sr₂Cu(Re_0.69Ca_0.31)O₆ in the frequency range 10 Hz-100 kHz at temperature from 300 to 500 K. Both the dielectric permittivity and dielectric loss factor are found to be frequency and temperature dependent. The enhanced value of the low frequency dielectric permittivity is associated to ionic polarization and interfacial phenomena. The material is found to possess significantly high dielectric permittivity. The calculated ac conductivity suggests semiconducting behaviour for the Sr₂Cu(Re_0.69Ca_0.31)O₆.     

Fe3O4/β-CD的高压电学性质研究

 高压下的电学性质测量是获得材料物理性质的有效手段。利用集成在金刚石对顶砧上的薄膜微电路,测量了高压下Fe₃O₄/β-CD（β-糊精）的电导率,并分析了电导率随压力的变化关系。在0～39.9 GPa范围内,Fe₃O₄/β-CD的电导率随压力的增加而逐渐增大,并呈半导体的特征;而在17.0 GPa处其电导率发生突变,表明样品发生了高压相变。在卸压过程中,电导率随压力的变化呈线性关系,并且卸压后样品的电导率不能回到最初的状态,推测这是一个不可逆的高压结构相变。     

Bi1.8Pb0.4Sr2Ca2.2Cu3Oy的磁通运动与临界电流特征

制备了银包套的Bi_1.8Pb_0.4Sr₂Ca_2.2Cu₃O_y带材。微结构观察证明样品是高度织构化的Bi2223单相。输运测量发现J_c(T,B,θ,φ)和R(T,B,θ,φ)均与θ有关,与φ无关(T=77K,B<1T),式中的θ和φ分别表示磁场与ab面和电流的夹角。求得了磁通运动的激活能。提出了热激活磁通弯结的形成与运动模型,并用London理论计算了弯结 关键词：     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

Structural and electrical studies of Ba5RTi3V7O30 (R=Ho,Gd, La) compounds

The ferroelectric ceramics Ba₅RTi₃V₇O₃₀ (R=Ho, Gd, La) have been synthesized by solid-state reaction technique. Preliminary X-ray structural analysis confirmed a single-phase formation of the compound in orthorhombic structure. Surface morphology of the compounds was studied by scanning electron microscopy (SEM). Detailed studies of electrical properties (i.e., dielectric constant, loss tangent, ac conductivity) as a function of temperature (RT-773 K) and at four different frequencies (1 kHz, 10 kHz, 100 kHz and 1 MHz) show ferroelectric–paraelectric phase transition of the compounds of diffuse-type. The activation energy has been evaluated from ac conductivity following Arrhenius equation. The conductivity pattern shows that it is strongly frequency dependent and obeys Jonscher's power relation.     

非晶态离子导体Li2B2O4晶化前期的离子导电性

本文研究了非晶态离子导体Li₂B₂O₄的离子电导率与温度的关系,特别着重于晶化前期的离子迁移特性。当温度低于T_K(≈310℃)时,离子电导率遵从Arrhenius关系。当高于晶化温度(≈411℃)时,以晶态中的离子迁移为主。在T_kc时,电导率偏离热激活机制呈反常增高。我们把这一过程称为晶化前期过程。可以用自由体积模型进行描述。晶化前期又可分为两部分:当温度低于、T_p(≈380℃)时,由于自由体积的重新分布,导致了电导率的增高;当T>T_p时,出现了少量微晶,但晶化量小于5%,由于非晶母体与微晶之间的界面效应使得离子导电性显著增强。可以通过室温淬火,把晶化前期非晶态的状态保持到室温,从而有可能制备出离子电导率高于纯非晶态的材料。 关键词：     

Nd0.7Sr0.3MnO3陶瓷EPIR效应的起源

用两线法和四线法对球磨合成后热处理的Nd_0.7Sr_0.3MnO₃陶瓷样品的电脉冲诱导电阻转变(EPIR)效应进行了测试.结果表明:在Nd_0.7Sr_0.3MnO₃块体中用四线法测得的I-V曲线为非线性,说明Nd_0.7Sr_0.3MnO₃样品在晶(相)界处存在空间电荷层和界面电阻.但用四线法测量EPIR效应时,没有EPIR效应发生,表明晶(相)界处的空间电荷层和肖特基势垒不能产生EPIR效应;对同一样品采用直流两线法测量,其I-V曲线也为非线性,但却发生明显的EPIR效应.说明在Nd_0.7Sr_0.3MnO₃陶瓷中发现的EPIR效应起源于样品与电极之间的接触界面,块体内的晶(相)界处虽能产生相似I-V特性,但却不能发生EPIR效应. 关键词： 电脉冲诱导电阻转变(EPIR) 亚锰酸盐 空间电荷层 I-V非线性')" href="#">I-V非线性     

Charge density transport in a novel halogened transition metal tetrachalcogenide (NbSe4)3.33I

We report the observation of non linear electrical conductivity above a sharp threshold field and of a periodic signal in the a.c. voltage for a novel linear chain compound (NbSe₄)_3.33I below a phase transition which occurs at T_c = 285 K. We conclude that this halogened metal transition tetrachalcogenide is a new compound which exhibits Peierls-Fröhlich charge density wave transport.     

Size effects on the charge-density-wave pinning in the quasi-one-dimensional conductor K0.30MoO3

We report size effects on the charge-density-wave pinning in the quasi-one-dimensional conductor K_0.30MoO₃ in the temperature range 77 K-160 K. The threshold field is approximately one order of magnitude larger in needle-like samples than in bulk crystals, temperature independent and strongly dependent on the width of the sample. In addition, the nonlinear conductivity shows a maximum near 130 K. The results are discussed in relation with various pinning models and CDW dislocations.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

新型混合离子-电子导体Sm0.9Ca0.1Al1-xMnxO3-δ的制备及其电性能研究

采用有机凝胶法结合固相烧结技术制备了单相的Sm_0.9Ca_0.1Al_1-xMn_xO_3-δ（SCAM, x=0.1—0.5）新型混合离子-电子导体.通过TG-DTA,XRD和直流四引线法研究了凝胶前驱体的热分解和相转化过程、烧结体的结构、相稳定性、导电性能及其电输运机理.结果表明,凝胶前驱体在900℃焙烧5h可以形成完全晶化的四方钙钛矿相纳米粉体 关键词： 混合离子-电子导体 3')" href="#">SmAlO₃ 有机凝胶法 电导率     

Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

Structural and impedance properties of Ca3Nb2O8 ceramics

Polycrystalline sample of Ca₃Nb₂O₈ was prepared by a high-temperature solid-state reaction technique. X-ray diffraction (XRD) analysis confirms the formation of single-phase compound of hexagonal (rhombohedral) crystal structure at room temperature. Scanning electron micrograph of the material showed uniform grain distribution on the surface of the sample. Detailed studies of dielectric properties of the compound, studied in a wide frequency range (10²-10⁶ Hz) at different temperatures (25-500 °C), exhibit a dielectric anomaly suggesting phase transition of ferroelectric-paraelectric and structural type at 300 °C. Electrical properties of the material were analyzed using a complex impedance technique. The Nyquists plot showed the presence of bulk effect in the material in the studied temperature range. Studies of electrical conductivity over a wide temperature range suggest that the compound has negative temperature coefficient of resistance behavior.     

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Successful incorporation of vanadium dopant within the giant dielectric material CaCu₃Ti₄O₁₂ (CCTO) through a  conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N(E _f) and hopping distance, R _ω of the ceramic were also calculated using this model.