A simple optical device for generating square flat-top intensity irradiation from a gaussian laser beam

A simple optical device, by which a square flat-top intensity irradiation area can be produced from a laser beam having a gaussian profile, is developed. Calculated nonuniformity [(I_max-I_min)/(I_max+I_min)×100] and the efficiency of this optical device (total energy irradiated in the square region/total energy of the gaussian beam) were 3% and 94%, respectively, for the best irradiation condition.     

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Modifications in the structural and optical properties of 100 MeV Ni⁷⁺ ions irradiated cobalt doped ZnO thin films (Zn_1−xCo_xO, x = 0.05) prepared by sol-gel route were studied. The films irradiated with a fluence of 1 × 10¹³ ions/cm² were single phase and show improved crystalline structure with preferred C-axis orientation as revealed from XRD analysis. Effects of irradiation on bond structure of thin films were studied by FTIR spectroscopy. The spectrum shows no change in bonding structure of Zn-O after irradiation. Improved quality of films is further supported by FTIR studies. Optical properties of the pristine and irradiated samples have been determined by using UV-vis spectroscopic technique. Optical absorption spectra show an appreciable red shift in the band gap of irradiated Zn_1−xCo_xO thin film due to sp-d interaction between Co²⁺ ions and ZnO band electrons. Transmission spectra show absorption band edges at 1.8 eV, 2.05 eV and 2.18 eV corresponding to d-d transition of Co²⁺ ions in tetrahedral field of ZnO. The AFM study shows a slight increase in grain size and surface roughness of the thin films after irradiation.     

Part II: Effect of high energy proton beam fluence on the electrical studies of lithium gallium phosphate glass electrolyte doped with selenium ions

A series of glass samples, according to the formula (100 ? x) (0.5Li₂O ? 0.2Ga₂O₃ ? 0.3P₂O₅) + xSeO₂ (x?=?0, 2, 4, 6, 8, 10) and 12 mol.%, labeled as LGPS _x (x is the mole percent of SeO₂), were synthesized through melt quenching technique. All the LGPS _x samples were irradiated by a high energy proton (H⁺) beam of 3 MeV at fluence of 10¹⁴, 5 × 10¹⁴, and 10 × 10¹⁴ ions/cm². FTIR and Raman spectra indicated that SeO₂ acts either as a glass modifier (SeO ₃ ^2? ) or a glass former (SeO ₄ ^2? ), as the dose rate of beam fluence changes. The bulk conductivity of the highest conducting sample LGPS₁₀ irradiated at a beam fluence of 5 × 10¹⁴ ions/cm² was determined as 5.87 × 10^?04 S/cm at 303 K. The super curve in the normalized spectra of electrical modulus at different temperatures confirms that the LGPS samples follow the temperature-independent, frequency-dependent relaxation time before and after irradiation.     

Low-temperature oxidation of CoCu films with long-term irradiation by oxygen ion beams

The surface and surface layers of Co_xCu_100?x inhomogeneous thin films irradiated by an oxygen ion beam for a long time (to 100 min) are studied. The films are obtained by electrolytic deposition. With X-ray photoelectron spectroscopy and conversion electron Mössbauer spectroscopy, it is shown that the irradiation leads to the formation of an oxidized surface layer. The continuity and thickness of the layer depend on the roughness of the initial film. For a cobalt content of 8≤x≤20 at. %, the oxide layer is continuous and nonuniform in thickness, the mean thickness being estimated at several tens of nanometers. The interface between the layer and the underlying film is sharp. The films irradiated are smoother than the asdeposited ones. The formation of the oxide layer is treated in terms of a qualitative model.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

Effect of ion irradiation induced defects on the excess conductivity of Cu1−xTlxBa2Ca1Cu2O8−δ superconductor thin films

The Cu_1?xTl_xBa₂Ca₁Cu₂O_8?δ superconductor thin film samples were bombarded with protons, Si and Au ions of energies 6, 20 and 20 MeV respectively using 5MV tandem pelletron accelerator at Experimental Physics Labs. Each un-irradiated sample had different values of normal state resistivity and the zero resistance critical temperature. The zero resistivity critical temperature has been increased after the irradiation by Si and Au ions. The fluctuation induced conductivity (FIC) analysis of the as-prepared and the ion irradiated samples were performed in the light of Aslamasov–Larkin (AL) theory. The FIC analysis has shown three dimensional (3D) fluctuations in the order parameter in all the samples along with a cross-over to two dimensional (2D) fluctuations at higher temperature. The 3D–2D cross-over temperature has been shifted to higher values after the ion irradiation. Moreover, a direct correlation between the zero resistivity critical temperature, 2D–3D cross-over temperature (T_LD) and superconductivity fluctuation temperature (T_scf) was observed. These studies have shown that the fluctuation induced conductivity (excess conductivity) depends on the density of defects and is independent of their nature.     

The effect of composition,electron irradiation and quenching on ionic conductivity in a new solid polymer electrolyte: (PEG)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>NH<Subscript>4</Subscript>I

We have prepared, characterized and investigated a new PEG-2000 based solid polymer electrolyte (PEG) _x NH₄I. Ionic conductivity measurements have been made as a function of salt concentration as well as temperature in the range 265–330 K. Selected compositions of the electrolyte were exposed to a beam of 8 MeV electrons to an accumulated dose of 10 kGy to study the effect on ionic conductivity. The electrolyte samples were also quenched at liquid nitrogen temperature and conductivity measurements were made. The ionic conductivity at room temperature exhibits a characteristic double peak for the composition x = 20 and 70. Both electron beam irradiation and quenching at low temperature have resulted in an increase in conductivity by 1–2 orders of magnitude. The enhancement of conductivity upon irradiation and quenching is interpreted as due to an increase in amorphous region and decrease in crystallinity of the electrolyte. DSC and proton NMR measurements also support this conclusion.      

13C high-resolution NMR study of doped polyacetylene

¹³C high resolution NMR spectra of doped trans polyacetylene, (CH)_x, have been measured. A spectrum of (CH)_x doped with AsF₅ shows a downfield shift, while that with potassium an upfield shift. The charge distribution and the existence of sp³ hybridized carbon on halogen-doped (CH)_x chains are discussed.     

Doping effect on photoluminescence of polyacetylene

Luminescence peaks of both cis-and trans-(CH)x shift to lower energy and their intensities decrease with decreasing temperature. On the other hand, the luminescence peak of cis-(CH)x shifts to higher energy and its intensity decreases with I₂ doping into (CH)x. These results are discussed, tentatively, in terms of luminescence originated from self localized state in (CH)x.     

Electrical properties of modified TZP(+TiO2,FeOx)

1 to 24 mol% TiO₂ and FeO_X were added to 3.2 mol% Y₂O₃ doped ZrO₂ (Z3Y) to obtain tetragonal zirconia polycrystals (TZP) with modified electronic properties. The materials were prepared by coprecipitation which allows to obtain fine, homogeneous and sinteractive powders. The solubility of TiO₂ in Z3Y can reach 24 mol%, while the maximum solubility of FeO_x is about 8 mol%. The impedance results show a decrease of the bulk and total conductivity of titania doped TZP with increasing titania concentration, while those of FeO_x doped TZP show only minor changes. The Hebb-Wagner polarization method was applied to evaluate the partial hole and electron conductivities. Three models are presented to interpret the polarization curves. 1.6 mol% FeO_x doped TZP has higher hole conductivity in air, while titania doped TZP has higher electronic conductivity at low oxygen partial pressures as compared to pure Z3Y. Paper presented at the 1st Euroconference on Solid State Ionics, Zakynthos, Greece, 11–18 Sept.1994     

Modification of Cd1−xMnxTe crystal surface layers by nanopulsed laser irradiation

The surface modification of Cd_1−xMn_xTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm². Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm² for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm². The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm², the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.     

Electron beam induced structural changes in Bi2Sr2CaCu2O8+x studied by cathodoluminescence microscopy and secondary electron emission

2 Sr₂CaCu₂O_8+x superconducting ceramics have been irradiated in the scanning electron microscope (SEM), and the irradiation-induced effects investigated by cathodoluminescence (CL), secondary electron emission (SEE) and X-ray microanalysis. Electron beam irradiation causes a slight Bi depletion and an inhomogeneous Ca distribution. A higher CL intensity emission is found in the irradiated areas, where besides an enhancement of the oxygen content related 2. 4 eV band, another CL bands probably related to new non-superconducting phases induced by irradiation can be observed. SEE yield measurements allow to detect an oxygen depleted region surrounding the irradiated areas. X-ray microanalysis shows that this intermediate region retains the cationic composition of the unaffected material. CL spectra from bright zones inside the same area also show a dominant 2. 4 eV emission band, which supports its relation with oxygen deficiency or rearrangement in high- superconductors. Received: 30 July 1996/Accepted: 8 October 1996     

Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Nitrogen-doped amorphous carbon thin films (a-CN_x) were prepared on silicon substrate by pulsed laser deposition process using methane (CH₄) and nitrogen (N₂) as source gas. The electrical properties of a-CN_x films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (I_D/I_G) increases with higher nitrogen concentration, which means that sp²-clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CN_x films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.     

Irradiation induced modifications in morphology and magnetic property of Mn/Si structure

Mn films of ∼50 nm has been deposited by electron beam evaporation technique on cleaned and etched Si [(1 0 0), 8–10 Ω cm] substrates to realize a Mn/Si interfacial structures. The structures have been irradiated from energetic (∼100 MeV) ion beam from Mn side. The irradiated and unirradiated structures have been characterized from atomic force microscopy, X-ray diffractometry, magnetic force microscopy, and vibrating sample magnetometer facilities. It has been found that surface/interfacial granular silicide phases (of Mn_xSi_y) are formed before and after the irradiation with a irradiation induced modifications of surface morphology and magnetic property. The surface/interface roughness has been found to increase on the irradiation from the atomic force microscopy data. The magnetic property on the irradiation shows an interesting and significant feature of an increased coercivity and a ferromagnetic like behavior in the Mn–Si structure. The observed increased coercivity has been related to the increased roughness on the irradiation. The ferromagnetism after the irradiation is a curious phenomenon which seems due to the formation of Mn–C–Si compound from the carbon dissolved in silicon.     

Preparation and characterization of Al and La co-doped (Ce1−x−y Al x LayO2-(x+y)/2) ceria

Effect of co-doping of lanthanum and aluminum on ionic conductivity of CeO₂ for its use as a solid electrolyte in intermediate temperature solid oxide fuel cells has been studied. A few compositions in the system Ce_1???x???y Al _x La_yO_{2???(x?+?y)/2} (CAL) with x?=?0.05, 0.025, and 0.00 and y?=?0.00, 0.025, and 0.05 such that x?+?y?=?0.05 are prepared by auto-combustion method. X-ray diffraction patterns show that all the synthesized samples are ceria-based solid solutions. Microstructures of thermally etched samples have been studied by scanning electron microscope. To determine the contribution of grains, σ _g and grain boundaries, σ _gb to the total conductivity, σ _t impedance is measured in the frequency range 1–1 MHz at different steady temperatures in the range 250–500 °C. It has been found that conductivity of the co-doped composition is more than singly doped with Al but less than singly doped lanthanum composition.     

Electron beam-induced structural transformations of MoO3 and MoO3?x crystalline nanostructures

Electron beam-induced damage and structural changes in MoO₃ and MoO_3−x single crystalline nanostructures were revealed by in situ transmission electron microscopy (TEM) examination (at 200 kV) after few minutes of concentrating the electron beam onto small areas (diameters between 25 and 200 nm) of the samples. The damage was evaluated recording TEM images, while the structural changes were revealed acquiring selected area electron diffraction patterns and high resolution transmission electron microscopy (HRTEM) images after different irradiation times. The as-received nanostructures of orthorhombic MoO₃ were transformed to a Magnéli’s phase of the oxide (γ-Mo₄O₁₁) after ~10 min of electron beam irradiation. The oxygen loss from the oxide promoted structural changes. HRTEM observations showed that, in the first stage of the reduction, oxygen vacancies generated by the electron beam are accommodated by forming crystallographic shear planes. At a later stage of the reduction process, a polycrystalline structure was developed with highly oxygen-deficient grains. The structural changes can be attributed to the local heating of the irradiated zone combined with radiolysis.     

SIMS direct surface imaging of Cu1−xCrx formation

Cu-Cr alloys, irradiated with a low-energy, high-current electron beam, are analyzed by high-resolution secondary ion mass spectrometry. Mass spectra and images of Cu⁺ and Cr⁺ surface distributions finely reveal the regions enriched in Cu and Cr. For electron beam energies above a threshold value, the formation of a non-equilibrium Cu_1−xCr_x solid solution, extending over sub-micrometer areas is highlighted for the first time. A discussion of the process leading to Cu_1−xCr_x formation is given.     

Enhanced Conductivity and High Thermal Stability of W-Doped SnO<Subscript>2</Subscript> Based on First-Principle Calculations

Tungsten (W)-doped SnO₂ is investigated by first-principle calculations, with a view to understand the effect of doping on the lattice structure, thermal stability, conductivity, and optical transparency. Due to the slight difference in ionic radius as well as high thermal and chemical compatibility between the native element and the heterogeneous dopant, the doped system changes a little with different deviations in the lattice constant from Vegard’s law, and good thermal stability is observed as the doping level reaches x = 0.125 in Sn_1-x W _x O₂ compounds. Nevertheless, the large disparities in electron configuration and electronegativity between W and Sn atoms will dramatically modify the electronic structure and charge distribution of W-doped SnO₂, leading to a remarkable enhancement of conductivity, electron excitation in the low energy region, and the consequent optical properties, while the visible transparency of Sn_1-x W _x O₂ is still preserved. Particularly, it is found that the optimal photoelectric properties of W-doped SnO₂ may be achieved at x = 0.03. These observations are consistent with the experimental results available on the structural, thermal, electronic, and optical properties of Sn_1-x W _x O₂, thus presenting a practical way of tailoring the physical behaviors of SnO₂ through the doping technique.     

Effect of thermal annealing on ohmic contacts properties of undoped and Si-doped AlxGa1−xN on Si (1 1 1) substrate grown by PA-MBE

In this work, we study the ohmic contact properties of titanium (Ti)/aluminum (Al) bi-layer contacts on undoped and n-type doped Al_xGa_1−xN grown on silicon (1 1 1) substrates by radio frequency nitrogen plasma-assisted molecular beam epitaxy (PA-MBE). The electrical stability of the contacts at various annealing temperatures of 400, 500, 600 and 700 °C were investigated. Specific contact resistivity was determined using transmission line method (TLM) and current–voltage (I–V) measurements. The results reveal that the bi-layer scheme was sensitive to the change of annealing temperatures and annealing time. The optimal value of specific contact resistivities was obtained at annealing temperature of 600 °C for both samples. However, the values of n-type doped sample exhibited better results compared with the undoped sample.     

Interaction of oxygen (O+7) ion beam on polyaniline thin films

High-energy ion beam irradiation of the polymers is a good technique to modify the properties such as electrical conductivity, structural behaviour and mechanial properties. Polyaniline thin films doped with hydrochloric acid (HCl) were prepared by oxidation of ammonium persulphate. The effect of Swift Heavy Ions irradiation on the electrical and structural properties of polyaniline has been measured in this study. Polyaniline films were irradiated by oxygen ions (energy 80 MeV, charge state O⁺⁷) with fluence varying from 1 × 10¹⁰ to 3 × 10¹² ions/cm². The studies on electrical and structural properties of the irradiated polymers were investigated by measuring V-I using four probe set-up and X-ray diffraction (XRD) using Bruker AXS, X-ray powder diffractometer. V-I measurements shows an increase in the conductivity of the film, XRD pattern of the polymer shows that the crystallinity improved after the irradiation with Swift Heavy Ions (SHI), which could be attributed to cross linking mechanism.