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1.
The magnetic susceptibility of Hg1?xMnxS and Hg1?xMnxSe solid solutions with 0.05 ≤x≤0.35 in the temperature range 1.2 KT ≤ 250 K is presented. The θp < 0 has been found. The critical temperature determined from the curve with two slopes is compared with the one obtained from EPR measurements. Two mechanisms of magnetic spin behaviour are considered.  相似文献   

2.
Specific heat and ac-susceptibility measurements are reported for EuxSr1?xSySe1?y samples. The critical concentrat ion for long-range magnetic ordering xc increases with decreasing y, for y = 0.1, xc = 1.0 holds. For samples with x < xc a broad peak in the specific heat and a peak in the susceptibility at lower temperatures indicates a spin glass type of magnetic ordering.  相似文献   

3.
The electronic conductivities of solid solutions La1?xBaxF3?x (0 ? x ? 0.0952) were investigated up to 533 K using the Hebb-Wagner dc polarization technique. The electrochemical cell (-)La|La1?xBaxF3?x|Pt(+) has been utilized with Pt as the ion-blocking electrode. Under steady-state conditions the La1?xBaxF3?x solid solutions exhibit electronic conductivity. The electronic conductivity vanishes in pure LaF3. Together with ac conductivity measurements it appears that the ionic transference number for La1?xBaxF3?x (0 ? x ? 0.0952) is essentially unity over the temperature range studied.  相似文献   

4.
Measurements of Raman scattering were performed on GaAs-InxGa1?xAs strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ~ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-AlxGa1?xAs superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk InxGa1?xAs alloys as the ratio of the one-layer thickness of InxGa1?xAs to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.  相似文献   

5.
The long-wavelength optical phonons of the layer GaSe1?xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1,06 μm line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman spectra of GaSe1?xTex solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal ?-GaSe to monoclinic GaTe in GaSe1?xTex solid solutions takes place in the composition range 0.27 ? × ? 0.72. Only one mode behaviour of the optical phonons was observed in GaSe1?xTex system.  相似文献   

6.
An improved theory based on the pair approximation is given for the thermodynamic properties of type A1?xBxC1?yDyIII–V quaternary solid solutions. The theory takes into account the quasi-chemical nature of the nearest neighbor pair distribution, which has been neglected or inadequately treated in previous work. With a suitable thermodynamic treatment, a quasi-chemical equilibrium relation for the nearest neighbor pair distribution is derived. Numerical calculations using available thermodynamic data show that the distribution will deviate appreciably from random mixing values in the In1?xGaxP1?yAsy and Al1?xGaxAs1?ySby systems due to a short-range clustering effect of nearest neighbor pairs with strong bond energy, whereas the deviation will be small in the Al1?xGaxP1?yASy system. The expressions for the chemical potentials and the activity coefficients of the binary compound components are given. These are readily applicable to phase diagram calculations.  相似文献   

7.
The observed rapid continuous isothermal change from enhanced paramagnetism to weak diamagnetism with increasing silver mole fraction x of the Pt1?xAgx alloy system is interpreted by means of a semiphenomenological magnetic alloy susceptibility function X(x). The x-dependent Knight shift K(x) of both 109Ag and 195Pt nuclei in Pt1?xAgx is closely related to the alloy susceptibility and therefore can be used in a combined K(x)?X(x)-analysis.  相似文献   

8.
As x in Zr(In)O2?x is increased from 0.08 to 0.16 (9–19 mole per cent In2O3) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10?5 to 3 × 10?6Ω?1cm?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10?2 to 4 × 10?2Ω?1cm?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.  相似文献   

9.
We report the Raman scattering study of optical vibrations in indium rich In1?xGaxAsyP1?y epitaxial layers grown on InP. We evidence the splitting of the LO line of InP even for very small x and demonstrate it is due to the presence of gallium in the samples. These results lead us to ascribe to In1?xGaxP a somewhat modified two-mode behaviour and to In1?xGaxAsyP1?y a four-mode behaviour.  相似文献   

10.
The ferroelectric compounds Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200-1000 cm−1 three main A1 phonons around 240 (υ1), 630 (υ2) and 816 (υ3) cm−1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm−1, reveals a structural change in the studied solid solutions. The behaviour of the Raman shift of the υ1 mode confirms that in Pb2Na1−xLaxNb5−xFexO15, a clear anomaly occurs in the vicinity of x=0.4.  相似文献   

11.
We present a mean-field study of the magnetic phase diagram of Ni1−xMox and Ni1−xWx alloys. The pair energies that enter the internal energy part of the free energy are obtained from a first-principles calculation. We try to understand why spin-glass phase is not observed in these alloys.  相似文献   

12.
The structure, magnetic property and magnetocaloric effect of GdCo2−xAlx (x=0, 0.06, 0.12, 0.18, 0.24, 0.4) compounds have been investigated by X-ray diffraction (XRD) and magnetic measurement techniques. The experimental results show that the GdCo2−xAlx (x≤0.4) compounds are single phase with a Laves-phase MgCu2-type structure. The Curie temperature Tc initially increases, and then decreases with increasing Al content. The maximum value of Tc, 418 K, is reached for the compound with x=0.06. The magnetic entropy change, which is determined from the temperature and field dependence of the magnetization by the Maxwell relation, decreases almost linearly with increasing Al content.  相似文献   

13.
We have performed a first-principle Full Potential Linearized Augmented Plane Waves calculation within the local density approximation (LDA) to the zinc-blende AlxGa1−xAs1−yNy to predict its optical properties as a function of N and Al mole fractions. The accurate calculations of electronic properties such as band structures and optical properties like refractive index, reflectivity and absorption coefficient of AlxGa1−xAs and AlxGa1−xAs1−yNy with x≤0.375 and y up to 4% are presented. AlxGa1−xAs on GaAs have a lattice mismatch less than 0.16% and the lattice constant of AlxGa1−xAs has a derivation parameter of 0.0113±0.0024. The band gap energies are calculated by LDA and the band anticrossing model using a matrix element of CMN=2.32 and a N level of EN=(1.625+0.069x) eV. The results show that AlxGa1−xAs can be very useful as a barrier layer in separate confinement heterostructure lasers and indicate that the best choice of x and y AlxGa1−xAs1−yNy could be an alternative to AlxGa1−xAs when utilized as active layers in quantum well lasers and high-efficiency solar cell structures.  相似文献   

14.
CdSexTe1−x nanocrystals (x=0.25, 0.40, 0.50, 0.60 and 0.75) were synthesized using thioglycerol as a stabilizing agent. The composition of the CdSexTe1−x nanocrystals was precisely controlled by tuning the precursor (Se/Te) ratio. The structural, morphological and optical properties of the nanocrystals were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), diffused reflectance spectroscopy (DRS) and photoluminescence (PL) measurements. It is found that the Se/Te ratio significantly affects the properties of the resultant CdSexTe1−x nanocrystals. XRD pattern of the CdSexTe1−x nanocrystals revealed cubic, hexagonal and mixed phases depending on the ratio of Se:Te. Surface morphology of the CdSexTe1−x nanocrystals showed nanoclusters of sizes ∼50 nm, with the adjacent cluster interlinking each other. DRS revealed the size dependence band gap energy prevailing in the CdSexTe1−x nanocrystals from 1.52 to 2.66 eV due to the optical bowing effect. PL measurements exhibited band edge emission in the visible spectral region, and are red shifted with increase in Se concentration. The facile route employed in the present work to synthesis the CdSexTe1−x nanocrystals in an aqueous medium is simple and controllable, and the strategy presented will be handy in preparing diverse semiconducting nanocrystals.  相似文献   

15.
The structural and magnetic studies below room temperature of the alloy system GdInxAg1-x(0?x?1) are reported. It has been found that alloys with x?0.5 crystallize in CsCl type cubic structure, but the distortion of the unit cell starts for alloys with x#62;0.5 and for these alloys the unit cell becomes tetragonal. No phase change is evident from the low temperature (295-8 K) structural studies. However, a break appears in the X-1m vs. T linear plot of each alloy of this system at a specific temperature (designated as break temperature TB). The variation of TB with x is similar to the variation of phase transition temperature with x reported for LaInxAg1-x. Close agreement has been found in the values of effective magneton number (p), magnetic ordering [Néel (TN) or Curie (TC)] and paramagnetic Curie (θp) temperature for materials studied by us and earlier workers. The variation of magnetization with applied field strength (2.5-65)×105 Am-1) at 4.2 K has also been reported for ferromagnetic of this system. It has been concluded that alloys with 0.4?x?0.6 are simple ferromagnets with parallel alignment of magnetic moment in the ground state. The angular arrangement of the magnetic moment starts appearing in the ground state for alloys with x?0.4 for x#62;0.6 and continues till x becomes closure to 0.17 or 0.84. The alloys with x=0.17 or x=0.84 have θp and TC equal to zero and appear paramagnetic. Angular arrangement in spins again appear for alloys with x?0.17 or x#62;0.84, however all materials with 0?x?0.17 or 0.84?x?1 remain antiferromagnetic.  相似文献   

16.
The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10−8 A/cm2 at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure.  相似文献   

17.
Structural, electronic and optical properties of Cd1−xSrxO (0≤x≤1) are calculated for the first time using density functional theory. Our results show that these properties are strongly dependent on x. The bond between Cd and O is partially covalent and the covalent nature of the bond decreases as the concentration of Sr increases from 0% to 100%. It is found that Cd1−xSrxO is an indirect bandgap compound for the entire range of x and the bandgap of the alloy increases from 0.85 to 6.00 eV with the increase in Sr concentration. Frequency dependent dielectric functions ε1(ω), ε2(ω), refractive index n(ω) and absorption coefficient α(ω) are also calculated and discussed in detail. The peak value of refractive indices shifts to higher energy regions with the increase in Sr. The striking feature of these alloys is that Cd0.5Sr0.5O is an anisotropic material. The larger value of the extraordinary refractive index confirms that the material is positive birefringence crystal. The present comprehensive theoretical study of the optoelectronic properties of the material predicts that it can be effectively used in optoelectronic applications in the wide range of spectrum; IR, visible and UV.  相似文献   

18.
Spin resonances of the third-order non-linear susceptibility of epitaxial layers of n- and p-type Pb1?xSnxTe and Pb1?xSnxTe/PbTe superlatttices have been observed by four photon mixing of the radiation of two CO2-lasers. Precise data on the effective g-values of the electrons and holes of Pb1?xSnxTe were obtained. These data and the results of magneto-optical interband absorption measurements are used to obtain k·p parameters within the Mitchell and Wallis band model. In the Pb1?xSnxTe/PbTe superlattices, the same g-values for electrons as in the Pb1?xSnxTe films with the same composition x are found. Consequently, the electrons in the superlattices are confined within the Pb1?xSnxTe layers. Therefore the Pb1?xSnxTe/PbTe system forms a type I and not a staggered superlattice.  相似文献   

19.
The substituted nickel ferrite (NiFe2−2xSnxCuxO4, x=0, 0.1, 0.2, 0.3) was prepared by the conventional ceramic method. The effect of substitution of Fe3+ ions by Sn4+ and Cu2+ cations on the structural and magnetic properties of the ferrite was studied by means of 57Fe Mössbauer spectroscopy, alternating gradient force magnetometry (AGFM) and Faraday balance. Whereas undoped NiFe2O4 adopts a fully inverse spinel structure of the type (Fe)[NiFe]O4, Sn4+ and Cu2+ cations tend to occupy octahedral positions in the structure of the substituted ferrite. Based on the results of Mössbauer spectroscopic measurements, the crystal-chemical formula of the substituted ferrite may be written as (Fe)[NiFe1−2xSnxCux]O4, where parentheses and square brackets enclose cations in tetrahedral (A) and octahedral [B] coordination, respectively. The Néel temperature and the saturation magnetization values of the NiFe2−2xSnxCuxO4 samples were found to decrease with increasing degree of substitution (x). The variation of the saturation magnetization with x measured using the AGFM method and that calculated on the basis of the Mössbauer spectroscopic measurements are in qualitative agreement.  相似文献   

20.
We report EPR and magnetic susceptability measurements in single crystals of Cd1?xMnxSe as a function of concentration and temperature. The data indicate that there is a critical concentration x≈0.22 which we identify with the percolation critical point xc.  相似文献   

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