Raman spectrum of 12CH4 between 2850 and 3100 cm−1

The Raman spectrum of ¹²CH₄ has been recorded at high resolution between 2850 and 3100 cm^?1. A comparative study with a calculated Raman spectrum of the ν₃ band shows that, in this spectral range, about 100 lines do not belong to ν₃ and may be assigned to the ν₁ and 2ν₂ bands.     

The polarized reflectance spectrum of a novel organic conductor (BEDT-TTF)2ClO4(C2H3Cl3)0.5

The polarized reflectance spectrum of a novel organic conductor, (BEDT-TTF)₂ClO₄(C₂H₃Cl₃)_0.5 was measured at room temperature over the spectral region from 340 cm^-1 to 25000 cm^-1. The reflectance spectrum provided an evidence for the anisotropic two-dimensional character of this material. The optical conductivity spectrum exhibits the existence of an optical band gap of about 0.2 eV, suggesting that this material is a semimetal rather than a metal.     

Line positions and intensities for the ν1 + ν2 and ν2 + ν3 bands of H218O

The intensities of about 90 lines of the ν₁ + ν₂ and ν₂ + ν₃ bands of H₂¹⁸O have been measured using a Fourier transform spectrum of natural water vapor. The constants involved in the rotational expansion of the transformed transition moment operators corresponding to these bands have been determined through a fit of these line intensities. The constants obtained are used to compute the whole spectrum of the ν₁ + ν₂ and ν₂ + ν₃ bands of H₂¹⁸O providing reliable line positions and intensities. For lines involving perturbed levels a comparison is given with the results obtained for H₂¹⁶O and it is shown that the results for one isotopic species cannot be transferred directly to another one.     

M4,5N4,5N4,5 auger electron spectrum of Ba metal

The Al Kα excited M_4,5N_4,5N_4,5 Auger spectrum of Ba has been measured from the metallic sample evaporated on a Ag substrate. The spectrum has been decomposed into individual line components after the background subtraction. The decomposed spectrum has been compared with the theoretical spectrum calculated for the 4d^?2 final state configuration in the mixed coupling scheme applying jj-coupling for the initial state and intermediate coupling for the final state. The most prominent structure of the spectrum shows the two 4d-hole coupling, but the structure which is caused by the Auger transitions M_,45N_2,3V has also been observed. The screening of the core holes in Ba metal seems to be produced by (5d6s) electrons. The simple excited atom model HF-calculations give an Auger kinetic energy shift (metal-free atom) of 16.7 eV, which is comparable to the experimental value 14–18 eV.     

Radioluminescent mechanism of Li2B4O7:Cu crystal

The structure of the radioluminescent (RL) spectrum of Li₂B₄O₇:Cu crystal is complex, having no normal Gauss peaks. The RL spectrum recorded showed one sharp and strong peak near 365 nm. For the purpose of explaining this phenomenon, we used the self-trapped exciton (STE) model to analyze experimental data of absorption spectrum, emission spectrum, radioluminescence spectrum and decay-time curves. We found a short lifetime component (of the order of ns) from phosphorous signals of Li₂B₄O₇:Cu. We realized that the short lifetime component related to inherent signal of host lattice and the d-p transitions of Cu⁺. This result is applicable in the detector system with high time resolution.     

金属玻璃(Fe0.8Ni0.15Cr0.05)78Si8B14的起始磁导率减落现象

在77—553K范围内的不同温度下测量了金属玻璃(Fe_0.8Ni_0.15,Cr_0.05)₇₈Si₈B₁₄的起始磁导率减落。测量结果表明,减落的温度关系表现为一个具有单一弛豫峰的不对称谱。在273K下考察了减落的动力学行为。用Hesse-Rubartsch方法拟合动力学曲线得到一个左右不对称的单峰激活能谱,最可几激活能大约为1.40eV。考察了减落的退火效应及退火动力学行为,结果表明,在宽的温度范围内,减落呈现明显的退火效应,而且退火动力学行为近似服从lnt动力学。 关键词：     

High-resolution infrared spectrum of the ν3 and ν2 + ν3 − ν2 bands of 14N16O2

The infrared absorption spectrum of the ν₃ band of ¹⁴NO₂ has been recorded with a resolution and a frequency accuracy much improved over the previous investigations. The K- and N-line assignments have been greatly extended and a more accurate set of spectroscopic constants derived. Several lines in the subbands with K_a ≥ 3 have been observed to be doubled by spin-rotation interaction and spin-rotation interaction constants have been obtained. Several weak series of lines in the spectrum (K_a = 0, 1, 2, and 3) have been unambiguously assigned to the “hot band” ν₂ + ν₃ ? ν₂. Lines of the K_a = 3, 4, 5, and 6 sub-bands of ν₃ have been found to be perturbed by a Coriolis interaction with the K_a = 4, 5, 6, and 7 levels of 2ν₂.     

非晶态Fe13.3Ni69.6B16.2Si0.9的结构驰豫

本文讨论了非晶合金Fe_13.3Ni_69.6B_16.2Si_0.9的结构弛豫动力学及可逆弛豫过程,研究了各种热处理引起居里温度T_c的变化。发现经长时间退火后T_c趋于平衡值且动力学可通过弛豫时间连续谱加以描述。可逆弛豫过程可用CSRO来说明,并且某一物理量的可逆变化并不意味着整个结构的变化是可逆的。 关键词：     

H+5团簇离子及其中性团簇产物H3和H4

报道了H⁺₅的实验结果.分析讨论了H⁺₅的 形成和分解途径.根据理论分析，以稳定的H⁺₃为核心与一个或多个氢分子结合可能形成稳定的H^{+_n氢团簇离子.另一方面，在高频离子源中, 有发生H+₃与H₂反应的条件.实 验中，从高频离子源引出的离子束被静电加速器加速，然后用9 关键词： +}₅团簇离子')" href="#">H⁺₅团簇离子 3中性团簇')" href="#">H₃中性团簇 4中性团簇')" href="#">H_{4中性团簇}     

Photophysical and enhanced daylight photocatalytic properties of N-doped TiO2/g-C3N4 composites

N-doped TiO₂/C₃N₄ composite samples were synthesized by heating the mixture of the hydrolysis product of TiCl₄ and C₃N₄ at different weight ratios. The samples were characterized by X-ray diffraction (XRD), Raman spectrum, UV–vis absorption spectrum, photoluminescence spectrum, X-ray photon electron spectrum (XPS) and surface photovoltage spectrum (SPS). The XRD and Raman results indicate that the introduction of C₃N₄ could inhibit the formation of rutile TiO₂. The composite samples show slight visible light absorption due to the introduction of C₃N₄. The XPS result reveals that some amount of nitrogen is doped into TiO₂, and C₃N₄ exists in the composite sample. The intensities of the SPS signal in the composite samples decrease with the rise in the amount of C₃N₄ in the samples. The photocatalytic activity was evaluated from the Rhodamine B (RhB) degradation under fluorescence light irradiation. The composite samples show significantly enhanced photocatalytic activities and the RhB self-sensitized photodegradation in this system was observed by measuring the photocurrent in the dye sensitized solar cell using the composite as the working electrode.     

Investigation of the luminescence spectrum of UO2MoO4

By time-resolved spectroscopy the intrinsic emission spectrum of UO₂MoO₄ at 4.2 K is obtained. The main progressions in the vibronic structure are identified as couplings with the A_g correlation field components of the symmetric and asymmetric UO₂ stretching modes. The intrinsic zero-phonon line in the emission and excitation spectrum is shown to be split both by the crystal field and correlation field. The steady-state emission spectrum at 4.2 K is dominated by emission from traps. The vibronic structure of the trap emission reveals that all traps are distorted uranyl groups.     

Photoemission results of intermetallic superconductors: Nb3Al and MgB2

We study the superconducting electronic structures of Nb₃Al and MgB₂ using high-resolution spectroscopy. The obtained spectrum of Nb₃Al measured below T_c shows clear opening of the superconducting gap with a sharp pile up in the density of states and a shift of the leading edge. In addition, the spectrum shows a peak-dip-hump line shape expected from the strong-coupling theory. On the other hand, for MgB₂, the superconducting-state spectrum measured at 5.4 K shows a coherent peak with a shoulder structure, in sharp contrast to that expected from a single isotropic gap. The superconducting spectral shape of MgB₂ can be explained in terms of a multicomponent gap.     

Luminescence in high purity In0.53Ga0.47As

We have investigated luminescence processes in high purity In_0.53Ga_0.47As grown by liquid phase epitaxy on InP substrate. The origins of luminescence processes have been determined by studying the dependence of emission intensity and spectrum on temperature. We show that exciton-ionized donor complex dominates the luminescence at 2K. With increasing temperature, the luminescence spectrum is dominated by donor-valence band and free electron-free hole recombination. Spectrum and bandgap energy are found to be dependent on the excitation position.     

Electronic structure of HgGa2S4

The electronic structure and chemical bonding in HgGa₂S₄ crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa₂S₄ is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3-7 eV and the components at BE=7-11 eV generated by the hybridization of S 3s and Ga 4s states with a strong contribution from the Hg 5d states. At higher binding energies the emission lines related to the Hg 4f, Ga 3p, S 2p, S 2s, Hg 4d, Ga LMM, Ga 3p and S LMM states are analyzed in the photoemission spectrum. The measured core level binding energies are compared with those of HgS, GaS, AgGaS₂ and SrGa₂S₄ compounds. The valence band spectrum proves to be independent on the technological conditions of crystal growth. In contrast to the valence band spectrum, the distribution of electron states in the bandgap of HgGa₂S₄ crystals is found to be strongly dependent upon the technological conditions of crystal growth as demonstrated by the photoluminescence analysis.     

CF3CDCl2分子红外多光子光热吸收谱

本文报道用铂丝光热吸收池作为探测器得到了CF₃CDCI₂的红外多光子吸收谱。并发现在线性吸收谱中944cm^-1处的吸收峰在多光子吸收谱中分裂为947cm^-1和927cm^-1两个吸收峰。这一现象与科里奥利力和非谐性引起的简正振动的耦合作用有关。这样,在用CF₃CDCI₂/CF₃CHCI₂体系分离氘同位素时,可以根据这一新结果选择更合适的激发波长。实验还发现在线性吸收谱中986cm^-1处的吸收峰在多光子吸收谱中出现约6cm^-2的红移。这种红移现象起源于分子振动能级的非谐性。 关键词：     

Electron energy-loss spectroscopy of LiMn2O4, LiMn1.6Ti0.4O4 and LiMn1.5Ni0.5O4

The dielectric properties of LiMn₂O₄, LiMn_1.6Ti_0.4O₄ and LiMn_1.5Ni_0.5O₄ powders, synthesized by sol-gel method, were determined by analyzing the low-loss region of the electron energy-loss spectroscopy (EELS) spectrum in a transmission electron microscope. From these data, the optical joint density of states (OJDS) was obtained by Kramers-Kronig analysis. Since maxima observed in the OJDS spectra are assigned to interband transitions above the Fermi level, these spectra can be interpreted on the basis of calculated density of states (DOS), carried out with the CASTEP code. Experimental and theoretical results are in good agreement.     

Luminescence spectroscopy of Eu in Ca3Sc2Si3O12

Ca₃Sc₂Si₃O₁₂ doped with 1 mol% Eu³⁺ and having a cubic garnet structure was prepared by a solid state reaction. The low temperature luminescence spectrum shows no measurable ⁵D₀→⁷F₀ band, in agreement with the location of the lanthanide dopant in a site of D₂ symmetry, i.e. with a Ca²⁺ substitution. On the other hand, the spectrum is clearly dominated by the ⁵D₀→⁷F₄ band, which is significantly stronger than that for the other transitions originating from the ⁵D₀ level. This unusual behavior is explained on the basis of a model describing the distortion of the EuO₈ coordination polyhedron from a cubic geometry to the actual D₂ one.     

Propene-V2O2 interactions studied by infrared emission spectroscopy

Infrared emission spectroscopy was used to investigate the interactions between propene and vanadium hemipentoxide. The spectrum obtained for V₂O₅ alone was very similar to the spectrum given by KBr disc transmission method. Reaction of propene on V₂O₅ was performed between 110 and 250°C; IR spectra were recorded in situ. Reduction of the oxide occurred and its bands were strongly altered. The bands attributed to the terminal oxygen (1018 cm^?1) and to the doubly bridged oxygen (820 cm^?1) were mainly affected by the reaction with propene. For a reaction temperature of 250°C, the recorded spectrum was close to that given by hydrogen reduction at 230°C. It can be concluded that V₂O₅ was reduced by propene with the formation of a superficial suboxide. By oxygen treatment, the reduced form was restored to the initial V₂O₅ sample. Infrared emission spectroscopy appears as a very suitable method for studying the interactions of the reactants with the catalysts.     

ELECTRONIC STRUCTURE OF BISMUTH MOLYBDENUM OXIDE SINGLE CRYSTAL Bi0.19MoO3

Single crystal Bi_0.19MoO₃ has been grown by fused salt electrolytic technique. X-ray powder diffraction shows that the unit cell parameters are: a=1.9985nm, b=0.4085nm and c=1.4437nm. The temperature dependence of resistivity demonstrates a semiconductor characteristic. X-ray photoemission spectroscopy studies provide that the valence band of Bi_0.19MoO₃ are made up of oxygen p_π and the π^*, π and σ bonding bands formed by orbital combination. The shoulder at 0.4 eV near the top of valence band may be formed from the non-bonding d_xy orbitals of some Mo atoms. The O1s core-electron spectrum reveals the presence of two inequivalent bonds of oxygen ions in Bi_0.19MoO₃. Bi4f core-level spectrum shows two bonding characters of Bi atoms in bismuth molybdenum oxide single crystals. Mo3d core-level spectrum could be decomposed into two kinds of valence states of molybdenum(Mo⁺⁵ and Mo⁺⁶).     

Heat capacity of the Nb3Al0.8Ge0.2 compounds

Heat capacity of the Nb₃Al_0.8Ge_0.2 samples have been measured in the temperature range 14–25K. It has been shown that the electron part of the heat capacity (γ) and the Debye temperature undergo only a small change after thermal treatment leading to significant increase of superconducting T_c. Such an increase of the band density of states N(E_F)_band may be caused by appropriate changes of phonon spectrum. The character of these changes is determined, to a great extent, by localization of the d-electrons in the niobium chains.