Changes of the magnetic interactions in TlCo2Se2 upon metal substitution

Various solid solutions TlCo_2−xMe_xSe₂ (Me=Fe, Ni and Cu) have been investigated by neutron powder diffraction, supplemented by magnetometry. The incommensurate spin-helix running along the c-axis in tetragonal TlCo₂Se₂ prevails for low concentrations of copper and iron but changes pitch. In the copper case, only cobalt carries a magnetic moment. On nickel substitution, however, collinear antiferromagnetic coupling between the ferromagnetic layers occurs. The magnetic moment distribution between the two transition metals in the solid solution TlCo_2−xNi_xSe₂ was tentatively probed with first principle calculations on fictive ordered TlCoNiSe₂, modelled by two types of superstructures. Also the ternary mother compounds, Pauli paramagnetic TlNi₂Se₂ and antiferromagnetic TlCo₂Se₂, were investigated with the same LMTO method.     

Magnetic characterization of Mn5SiB2 and Mn5Si3 phases

In this work the Mn₅Si₃ and Mn₅SiB₂ phases were produced via arc melting and heat treatment at 1000 °C for 50 h under argon. A detailed microstructure characterization indicated the formation of single-phase Mn₅Si₃ and near single-phase Mn₅SiB₂ microstructures. The magnetic behavior of the Mn₅Si₃ phase was investigated and the results are in agreement with previous data from the literature, which indicates the existence of two anti-ferromagnetic structures for temperatures below 98 K. The Mn₅SiB₂ phase shows a ferromagnetic behavior presenting a saturation magnetization M_s of about 5.35×10⁵ A/m (0.67 T) at room temperature and an estimated Curie temperature between 470 and 490 K. In addition, AC susceptibility data indicates no evidence of any other magnetic ordering in 4-300 K temperature range. The magnetization values are smaller than that calculated using the magnetic moment from previous literature NMR results. This result suggests a probable ferrimagnetic arrangement of the Mn moments.     

Crystal structure and magnetic properties of Nd（Mn1-xFex）2Si2 compounds

X-ray powder diffraction,resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 ≤ x ≤ 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm.The field-cooled temperature dependence of the magnetization curves shows that,at low temperatures,NdFe2Si2 is antiferromagnetic,while the other compounds show ferromagnetic behaviour.The substitution of Fe for Mn leads to a decrease in lattice parameters a,c and unit-cell volume V .The Curie temperature of the compounds first increases,reaches a maximum around x = 0.7,then decreases with Fe content.However,the saturation magnetization decreases monotonically with increasing Fe content.This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe.The temperature’s square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature,which is typical of simple metals.     

Study of the quasi two-dimensional CoxNi1-xTa2O6 compounds by X-ray diffraction and magnetic susceptibility measurements

We report results on the structural and magnetic properties of the Co_xNi_1−xTa₂O₆ series of compounds by X-ray powder diffraction, magnetic susceptibility and magnetization measurements. X-ray refinements carried out by the Rietveld method show that these compounds crystallize in a P4₂/mnm tetragonal structure. Magnetic susceptibility curves show a broadened maximum witnessing that these compounds exhibit two-dimensional antiferromagnetic behaviors. All the Co_xNi_1−xTa₂O₆ compounds order below 10 K and present a large ion anisotropy. The magnetic properties have been determined in both the paramagnetic and antiferromagnetic state. In the hypothesis of two dimensional AF ordering, the near neighbor exchange constants (J₁) and the next near neighbor exchange constants for two different paths (J₂ and J'₂) were determined. The composition dependence of the magnetic properties including ordering temperature, exchange constants and anisotropy factors are discussed. The drastic reduction of the ordering temperature for x=0.20 for Co_xNi_1−xTa₂O₆, suggest the hypothesis of a peculiar magnetic behavior for this composition.     

Magnetic properties of the Lu2Fe17−xMnx single crystals

Magnetic properties of the single-crystalline Lu₂Fe_17−xMn_x compounds, in which x=0, 0.5, and 2, with the Th₂Ni₁₇-type crystal structure are reported. The Lu₂Fe_17−xMn_x compounds with x=0 and 0.5 are ferromagnets at low temperatures and antiferromagnets at high temperatures. The compound with x=2 is always a ferromagnet. The easy-plane magnetic anisotropy in the Lu₂Fe_17−xMn_x ferromagnets drastically weakens with increase in Mn content up to x=2. The temperature dependence of the first magnetic anisotropy constant was obtained and compared with the single-ion model prediction.     

稀磁半导体Hg0.89Mn0.11Te磁化强度及磁化率的研究

利用MPMS-7(magnetic property measurement system)型超导量子磁强计对垂直布里奇曼法生长的Hg_0.89Mn_0.11Te晶片磁化强度变化规律进行了测量.试验采用了两种不同的外场和冷却条件.首先在5 K恒温下，-5200到5200 kA/m范围内改变磁场强度进行了测定.然后维持800 kA/m恒定磁场，分别在有场冷却和无场冷却条件下，从5到300 K范围内改变温度，研究了变温条件下的磁化特性.并采用分子场近似模型，用类布里渊函数，最小二乘法对磁化强度随磁场强度变化的实验结果进行拟合和分析，结果表明，Mn²⁺离子之间存在反铁磁相互作用.磁化率和温度关系分析表明：在测试范围内Hg_0.89Mn_0.11Te是单一的顺磁相，在高温区磁化率和温度服从居里-万斯定律，呈线性关系，低于40 K时，磁化率和温度的关系偏离居里-万斯定律，表现出顺磁增强现象. 关键词： 0.89Mn_0.11Te')" href="#">Hg_0.89Mn_0.11Te 磁化强度 磁化率 类布里渊函数     

The magnetic properties of oxide spinel Li0.5Fe2.5−2xAlxCrxO4 solid solutions

The exchange interactions (J_BB and J_AB are the intra and the inter-sublattice exchange interactions between neighbouring spins, respectively) are obtained by using the general expressions of canting angle and critical temperature obtained by mean field theory of Li_0.5Fe_2.5−2xAl_xCr_xO₄. The expression of magnetic energy of Li_0.5Fe_2.5−2xAl_xCr_xO₄ is obtained for different spin configurations and dilution x. The saturation magnetisation of Li_0.5Fe_2.5-2xAl_xCr_xO₄ is obtained with different values of dilution x. The magnetic phase diagram of Li_0.5Fe_2.5-2xAl_xCr_xO₄ materials is obtained by high temperature series expansions (HTSEs). The critical exponent associated with the magnetic susceptibility of Li_0.5Fe_2.5−2xAl_xCr_xO₄ is deduced.     

Density functional analysis of the magnetic structures of Sr2MGe2O7 (M=Mn,Co)

To examine the difference between the magnetic structures of Sr₂MGe₂O₇ (M=Mn, Co), we evaluated their spin exchange interactions by performing energy-mapping analysis based on density functional theory calculations. The calculated intra- and inter-layer spin exchanges correctly predict the G-type and C-type antiferromagnetic structures of Sr₂MnGe₂O₇ and Sr₂CoGe₂O₇, respectively, and the Curie–Weiss temperatures estimated from these spin exchanges are also in good agreement with the experiment. The ∥c and ⊥c orientations of the spins in the ordered magnetic structures of Sr₂MnGe₂O₇ and Sr₂CoGe₂O₇, respectively, were also examined by considering spin–orbit coupling.     

Unconventional magnetic and transport properties in Gd1−xLaxMn2Ge2 with two-dimensional arrangement of Mn atoms

In this paper, we present our recent experimental results of magnetic and transport properties of Gd_1−xLa_xMn₂Ge₂ intermetallic compounds with the ThCr₂Si₂-type layered structure. The results obtained indicate that, in GdMn₂Ge₂, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at T_t3, below the Néel temperature T_N. In Gd_1−xLa_xMn₂Ge₂ compounds with x=0.05 and 0.075, after ordering ferrimagnetically at T_t1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at T_t2 and T_t3. In Gd_0.925La_0.075Mn₂Ge₂, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd_0.925La_0.075Mn₂Ge₂ and TbMn₂Ge₂. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.     

Electronic structure and Fermi surface of new K intercalated iron selenide superconductor KxFe2Se2

Using the ab initio FLAPW-GGA method we examine the electronic band structure, densities of states, and the Fermi surface topology for a very recently synthesized ThCr₂Si₂-type potassium intercalated iron selenide superconductor K_xFe₂Se₂. We found that the electronic state of the stoichiometric KFe₂Se₂ is far from that of the isostructural iron pnictide superconductors. Thus the main factor responsible for experimentally observed superconductivity for this material is the deficiency of potassium, i.e. the hole doping effect. On the other hand, based on the results obtained, we conclude that the tuning of the electronic system of the new K_xFe₂Se₂ superconductor in the presence of K vacancies is achieved by joint effect owing to structural relaxations and hole doping, where the structural factor is responsible for the modification of the band topology, whereas the doping level determines their filling.     

On the cause for the no spin-gap behavior of the triangular spin tube system CsCrF4

The spin exchange interactions of the triangular spin tube system CsCrF₄ were evaluated by performing mapping analysis on the basis of density functional theory calculations. Our results show that the exchange J₁ for the triangular ring and the exchange J₂ along the chain are both antiferromagnetic with the ratio J₁/J₂≈0.5, so the spin gap of CsCrF₄ is too small to be experimentally detected. This finding is consistent with the experimental observation and theoretical analysis. The possible ways of preparing a triangular spin tube with observable spin gap was discussed.     

Room temperature ferromagnetism behavior of Sn1−xMnxO2 powders

In this paper, we have investigated Mn-doped SnO₂ powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn_0.987Mn_0.013O₂ showed a coercivity H_c=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μ_B of the Sn_0.9921Mn_0.0079O₂ sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn_1−xMn_xO₂ are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.     

A neutron powder diffraction study of the helimagnetic structure of TlCo2Se2−xSx

The magnetic layer structure of TlCo₂Se_2−xS_x has been thoroughly re-investigated with neutron powder diffraction. The cobalt magnetic moments are ferromagnetically arranged within the layers, but the interlayer coupling differs profoundly with varying composition (x): the spins in TlCo₂Se₂ form a helix along the c-axis with a turning-angle of ∼119° at 1.4 K. This kind of helical structure prevails for 0≤x≤1.5 with a gradual decrease of the angle with increasing sulphur content, down to 34°, showing an almost linear relationship with the interlayer distance of Co-Co. For x≥1.75 the interlayer coupling changes to ferromagnetic. Unexpectedly, two helices were found to coexist at x=0.5 and x=1.0. The interaction between adjacent cobalt layers is there characterized by an incommensurate angle (106°, resp., 73°) together with a commensurate angle of 90°. The magnetic structures have been refined as two magnetic phases, each having a characteristic wave vector. A tentative model where the symmetry of the structure and the interlayer distance compete is considered for explaining the simultaneous occurrence of the two kinds of diffraction profile satellites.     

Electronic structure and magnetism in full-Heusler compound Mn2ZnGe

The first-principle calculations within density functional theory are used to investigate the electronic structure and magnetism of the Mn₂ZnGe Heusler alloy with CuHg₂Ti-type structure. The half-metallic ferrimagnets (HMFs) in Mn₂ZnGe are predicted. The energy gap lies in the minority-spin band for the Mn₂ZnGe alloy. The calculated total spin magnetic moment is −2μ_B per unit cell for Mn₂ZnGe alloy, the magnetic moments of Zn and Mn(B) are antiparallel to that of Mn(A), and we also found that the half-metallic properties of Mn₂ZnGe are insensitive to the dependence of lattice within the wide range of 5.69 and 5.80 Å where exhibiting perfect 100% spin polarization at the Fermi energy.     

Effect of Mn on the magnetic properties of Fe3B/Nd2Fe14B nanocomposites

The magnetic properties of Nd_4.5Fe_77−xMn_xB_18.5 (x=0, 1 and 2) nanocomposites prepared by the crystallization of amorphous precursors were investigated. Addition of Mn is found to decrease the crystallization temperature of the amorphous ribbons. The intrinsic coercivity _iH_c and maximum energy product (BH)_max increase from 2.6 kOe and 9.1 MGOe for x=0 to 3.1 kOe and 10.3 MGOe for x=1, respectively, and the remanence ratio M_r/M_s increases from 0.70 to 0.72. The effect of Mn on Curie temperature T_C and the thermal stability of M_r and _iH_c were also studied. ⁵⁷Fe Mössbauer spectra have been recorded for x=0, 1 and 2 ribbons at room temperature and site preference of the Mn atoms in Fe₃B and Nd₂Fe₁₄B phases is discussed using the Mössbauer spectroscopy.     

Optical and electrical properties of single Sb2Se3 nanorod

In this report, methods of solvothermal synthesis of Sb₂Se₃ nanorods from a single-source precursor Sb[Se₂P(O ⁱPr)₂]₃ were demonstrated. The synthesized Sb₂Se₃ nanorods were expected to have new optical and electrical properties. With the electron beam (E-beam) lithography and focus ion beam (FIB) techniques, we achieved immobilization and positioning of a single Sb₂Se₃ nanorod on a patterned template. By using the confocal Raman microscope and two-point-contact electrical measurement methods, we obtained optical and electrical characteristics from a single Sb₂Se₃ nanorod.     

Low temperature magnetism of Cd-doped Ce2RhIn8 heavy fermion antiferromagnet

We report the low temperature magnetic properties of Cd-doped single crystals of Ce₂RhIn₈ grown from In-flux. Measurements of temperature-dependent magnetic susceptibility, heat capacity, electrical resistivity and X-ray magnetic scattering revealed that Cd-doping enhances the antiferromagnetic ordering temperature from for crystals with nominal Cd-concentration of ~20%. Similarly to the pure compound, Cd-doped Ce₂RhIn₈ presents just below T_N a commensurate antiferromagnetic structure with a propagation vector . Comparisons between our results and the general effects of Cd-doping on the single layer related family CeMIn₅ (M=Co, Rh and Ir) will also be given.     

Room-temperature ferromagnetism in Sn1−xMnxO2 nanocrystalline thin films prepared by ultrasonic spray pyrolysis

Sn_1−xMn_xO₂ (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn_1−xMn_xO₂ thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn³⁺ ions have substituted Sn⁴⁺ ions without changing the tetragonal rutile structure of pure SnO₂. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn_1−xMn_xO₂ (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10⁻⁴ emu saturation magnetization and 92 Oe coercivity in case of Sn_1−xMn_xO₂ (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.     

Crystallization behavior of GeSe2-Ga2Se3-CsI glasses studied by Differential Thermal Analysis

GeSe₂-Ga₂Se₃-CsI chalcohalide glasses had been prepared by the melt-quenching technique. With the addition of CsI, the short wavelength cut-off edge of the glasses shifts to the short wavelength gradually, while the long wavelength cut-off edge located at ∼16 μm is nearly unchanged. Thermal properties were measured by Differential Thermal Analysis (DTA). From the heating rate dependence of crystallization temperature, the activation energy for crystallization (E) and the order parameter (n) were calculated by the Kissinger equation. The results show that the activation energy of crystallization decreases dramatically with increasing of CsI content, and the most probable crystallization mechanism is volume controlled one-dimensional growth.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.