快速退火后重掺硼的分子束外延层的电学特性

对快速退火后用共蒸发Ｂ_２Ｏ₃方法实现重掺杂硼的硅分子束外延层的电学特性进行了研究．１１００℃退火可以使得外延层中载流子浓度提高４倍，空穴的霍耳迁移率与相同浓度下硅体材料的水平相当；外延层与衬底之间载流子浓度转变陡峭，获得了晶体质量良好的外延层． 关键词：     

半导体超晶格的电子迁移率增强

分子束外延能够生长原子平滑的层、精确控制层厚度及掺杂的灵活性使其较容易地合成多组分、多层的异质结.然而,在较高的掺杂浓度下,获得高迁移率(如　　　　　　　　　　　　)普遍认为是困难的,这就大大地限制了这些材料的应用. 1978年,Dingle等首先报道了在分子束外延中采用调     

分子束外延生长的n型Al掺杂ZnS1-xTex深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_1-xTe_x外延层深中心.Al掺杂ZnS_0.977Te_0.023的光致荧光强度明显低于不掺杂的ZnS_0.977Te_0.023，这表明一部分Al原子形成非辐射深中心.Al掺杂ZnS_1-xTe_x(x=0，0.017，0.04和0.046)的深能级瞬态傅里叶 关键词：     

等离子辅助分子束外延技术研究生长在Si(111)衬底的氮化镓pn结

利用等离子辅助分子束外延系统研究了生长在硅(111)衬底的氮化镓pn结,并将其应用于光学器件．硅和镁分别用做n和p掺杂,反射高能电子衍射图像显示氮化镓pn结层具有良好的表面形貌,结层厚度约为0.705 nm,且为六方结构．室温下X射线衍射对称摇摆曲线中(0002)面的ω/2θ显示,半峰宽为0.340,说明氮化镓pn结质量高．另外,在硅和镁掺杂样品中没有A1峰淬灭．光致发光光谱表明pn结样品具有良好的光学性能．镍和铝作为分别作为正面和背面的电极接触应用于光学器件,该器件的电流电压特性显示了典型的异质结整流特性．正向接触镍经过氮气中退火处理10 min,结果表明,600 oC处理的样品比400 oC处理和未经处理的样品具有更高的增益．     

C60分子在Si（111）-7×7表面分子束外延生长的STM研究

在超高真空中采用分子束外延(molecular beam epitaxial)技术进行C₆₀分子在硅（111）-7×7表面的生长,并利用扫描隧道显微镜进行原位研究.室温下,相对于无层错半胞（unfaulted half unit cell）,C₆₀更易于吸附在有层错半胞（faulted half unit cell）.表面台阶处的电子悬挂键密度最高,通过控制温度和时间进行退火处理后,C₆₀分子会向着台阶的方向扩散并聚集.测量分子在不同吸附位 关键词： 60分子')" href="#">C₆₀分子 分子束外延 Si(111)-7×7 超高真空扫描隧道显微镜     

N2掺杂p型ZnO及ZnO同质p-n结LED的制备

采用射频等离子体辅助分子束外延方法,以N₂作为掺杂源,以O₂作为辅助分解的气体和氧源,通过等离子体光谱的实时监测来控制掺杂源中各组分的含量,制备了p型ZnO薄膜及同质p-n结。I-V曲线显示该p-n结具有整流特性,直流驱动下获得了稳定的室温电致发光,包括位于420nm附近的发光峰和500~700nm的发光带。     

分子束外延调制掺杂结构的低温光致荧光

本文报道了分子束外延调制掺杂GaAs/N-AIGaAs二维电子气材料的低温光致荧光结果。实验表明,光致荧光谱分析可以作为二维电子气材料的质量诊断技术,由光致荧光谱得到的质量评价与材料的电学性能恰相对应,这就为改进分子束外延工艺提供了依据。 关键词：     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

量子限制受主的光致发光研究

对一系列δ掺杂浅受主铍（Be）原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光（PL）研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品,并在每量子阱中央进行了Be原子的δ掺杂,量子阱宽度为30 到200 ?.在4.2 K温度下测量了上述系列样品的光致发光谱,清楚地观察到了束缚激子的受主从基态1s_3/2（Γ₆）到第一激发态 关键词： 量子限制受主 光致发光 多量子阱 δ掺杂     

半导体超薄层外延技术

分子束外延（ＭＢＥ），金属有机化学气相淀积（ＭＯ－ＣＶＤ），金属有机分子束外延（ＭＯ－ＭＢＥ）以及原子层和分子层外延（ＡＬＥ和ＭＬＥ）等超薄层外延技术，是随着集成电路向高密度集成，高工作速度和超小型化方向发展而形成的一种薄膜制备工艺，并在微电子学、低维物理和材料科学等领域中有着重要的应用．利用这种技术，可以制备各类超高速器件，光电器件及其集成电路．由这种工艺制备的优质超晶格结构为人们更加深入地从理论和实验上揭示二维电子体系的物理性质带来了极大便利，而且一维超晶格的实现也将有赖于超薄层外延生长技术．可以预期，用这种技术还可以制备由半导体、金属以及有机材料相结合的多类型、多组元的多层人工超薄材料。     

Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE

Buried heterostructure (BH) lasers with a PbSe active layer and Pb_0.97Eu_0.03Se confinement layers were fabricated using molecular beam epitaxy (MBE). The waveguide was defined by photolithography and an ion milling process. By MBE overgrowth of the etched structure with a PbEuSe layer the BH-laser was formed.The lasers operated cw with low threshold currents (8 mA at 80 K) in the spectral range from 1280 cm⁻¹ (30 K) to 1800 cm⁻¹ (160K). The spectral characteristics of these lasers were superior to comparable DH stripe lasers. These lasers were the first with IV/VI-MBE overgrowth process of etched lateral structures.     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

Flash-lamp annealing of boron implanted silicon

Structure and impurity behaviour of silicon doped by B⁺ ion implantation up to dose of 2 × 10¹⁵ ion/cm² have been investigated after lamp pulse annealing. It has been demonstrated that the implanted layer structure strongly depends on the implantation dose, light energy density, as well as the crystallographic orientation. The optimal annealing result in the structure, which is equivalent to that obtained in the thermal treatment, The impurity diffusive redistribution proved to be rather weaker then in the case of thermal treatment.     

Dimensional dependence of the energy transfer in MBE grown MnS layers

MBE grown MnS layers with different thicknesses have been studied by time resolved photoluminescence spectroscopy. The temporal evolution of the internal Mn²⁺ (3d⁵) luminescence is measured over 3 orders of magnitude in intensity. The decay curves obtained reveal a surprising but distinct dependence on the layer thickness with longer lifetime than thinner layers. The observed non-exponential behavior of those time transients can be well described by an energy diffusion model within the 3d states of the manganese subsystem and a subsequent dipole–dipole energy transfer to radiationless centers.     

A Study of Mechanochemical Doping of Fluoride Crystals with a Fluorite Structure by Er3+ Ions via Electron Paramagnetic Resonance Spectra

Using electron paramagnetic resonance (EPR) spectroscopy, we have shown that, upon mecha- noactivated doping of powders of compounds CaF₂, SrF₂, and BaF₂ with Er³⁺ ions, impurity centers of single erbium ions with cubic symmetry are formed. Investigations of dependences of EPR spectra intensities on the particle size show that the process of mechanochemical doping with Er³⁺ ions proceeds differently for CaF₂, SrF₂, and BaF₂ host matrices. In the case of CaF₂, impurity centers are localized in a very thin near-surface layer of CaF₂ particles, in SrF₂, the impurity is distributed over the volume of particles, while, in BaF₂, there is a layer of a finite thickness for which the probability of doping in the course of mechanosynthesis is very small and the impurity of the rare-earth element is localized in the core of large particles. These data can be explained assuming that the result of mechanosynthesis of particles of fluorides with a fluorite structure doped with Er3+ ions at room temperature is governed by two processes—mechanoactivated diffusion of rare-earth ions into particles and segregation of impurity ions at grain boundaries. In this case, the typical scales for compounds CaF₂, SrF₂, and BaF₂ considerably differ from each other.     

Temperature-dependent segregation of Pr3+ impurity ions in Y2SiO5:Pr3+ and YPO4:Pr3+ nanocrystals

Stationary and time-resolved spectroscopic methods are used to show that the impurity ions in Y₂SiO₅:Pr³⁺ and YPO₄:Pr³⁺ nanocrystals are distributed nonuniformly. This nonuniform distribution is found to be caused by the temperature-dependent segregation of Pr³⁺ ions near the surface of a nanocrystal. The motion of the activator ions from the bulk of a nanocrystal to the near-surface layer is traced when the activator concentration and the heat-treatment parameters are varied over wide ranges, and the main parameters of this effect (impurity redistribution intensity and time, diffusion coefficient) are estimated.     

Two-dimensional density of states for electrons bound to impurities inside inversion layers at the semiconductor-insulator interface

The density of states for electrons bound to Na⁺ impurities inside the inversion layer at the semiconductor-insulator interface of an MOS structure is calculated as a function of impurity concentration. The impurity potential is considered unscreened and the electrical quantum limit is assumed. A simple one-electron Hamiltonian is used and the disorder is treated through a cluster calculation. It is shown that the impurity band has a considerable bandwidth for impurity concentrations in a range of the experimental regime (this result agrees with the experimental findings of Hartstein and Fowler), and that the upper Hubbard band stands well above the lower band at very low concentration (in rough agreement with recent calculation done by Phelps and Bajaj on D^? state).     

In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED,SIMS, and AES techniques

A combination of the surface diagnostic techniques Auger electron spectroscopy (AES), reflection high energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS) was used in order to get more detailed information on basic processes which lead to the formation of high quality monocrystalline GaAs and Al _x Ga_1−x As films by molecular beam epitaxy (MBE) under ultra-high vacuum conditions. The formation and changes of reconstructed surface structures on (100) GaAs as a function of growth parameters were observedduring growth by RHEED. AES was used to determine the relative ratio of Ga/As on the surface for different reconstructed structures, to investigate the impurity contamination on substrate surfaces and grown films, and to study the surface segregation of Sn in MBE GaAs during doping. Finally, intentional and unintentional impurities incorporated during the growth of GaAs and Al _x Ga_1−x As by MBE were detected by the SIMS technique immediately after growth within the reaction chamber.     

Exciton and impurity electroabsorption in GaSexTe1-x〈Sn〉 single crystals

The exciton and impurity electroabsorption has been studied in GaSe_xTe_1-x〈Sn〉 (0.7 ?χ?1) exhibiting the properties of residual conductivity (RC). It has been shown that the broadening of the negative exciton peak, the nature of the field dependence of the electroabsorption signal, and its anisotropy in the exciton and impurity region are associated with the presence of internal chaotic fields E_int ≈ 10³ ? 10⁴ V cm^?1 coming into play because of the fluctuating distribution of the tin impurity and the defects inherent in layer crystals. Based on investigations of the impurity electroabsorption (IEA), the depth of occurence (hv = 1.18 eV) and the concentration (N = 10¹⁶cm³) of impurity centres have been determined.     

Uniaxial stress effects and excited states for multiple bound excitons

The theoretical model for multiple bound excitons (MBE) recently introduced by Dean et al¹ is used to discuss uniaxial stress effects in silicon. The fine structures observed in MBE spectra for SiC and Si are qualitatively strikingly similar. However, the interpretation of the strongest features in terms of a specific model for excited states suggested by Kirczenow² and Thewalt³ is not valid for SiC.