Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

Structural modification in swift heavy ion irradiated muscovite mica

Two-layer monoclinic(2 M) muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss( dE/dx)_e of 14.7 keV/nm. The ion fluence is varied between 1×10~(11) and1×10~(13) ions/cm~2. Structural transition in irradiated mica is investigated by x-ray diffraction(XRD). The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion(SHI) irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic(1 M) structure is thought to be generated in 2 M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy(HRTEM) is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Effect of secondary electrons from latent tracks created in YBCO by swift heavy ion irradiation

Swift heavy ions (SHI) with electronic energy loss exceeding a value of 14.4 keVnm⁻¹ create amorphized latent tracks in YBCO type superconductors. In the low fluence regime of an ion beam where tracks do not overlap, a decrease of the superconducting transition temperature as probed through resistivity studies, is not expected due to availability of percolating current paths. The present study however shows T_c decrease by about 1–3 K in thin films of YBCO when irradiated by 250 MeVAg ions at 79 K at a fluence of 5×10¹⁰–1×10¹² ionscm⁻². The highest fluence used in the present study is three times less than the fluence where track overlapping becomes significant. The T_c tends to increase towards the preirradiation value on annealing the films at room temperature. To explain this unusual result, we consider the effect of ion irradiation in inducing materials modification not only through creation of amorphized latent tracks along the ion path, but also through creation of atomic disorder in the oxygen sublattice in the Cu–O chains of YBCO by the secondary electrons. These electrons are emitted radially from the tracks during the passage of the SHI. Considering the correlation between the charge state of copper and its oxygen coordination, we show in particular that the latter process is a consequence of the inelastic interaction of the SHI induced low-energy secondary electrons with the YBCO lattice, which result in chain oxygen disorder and T_c decrease.     

CVD法单层MoS2在209Bi离子辐照下的损伤效应研究

通过光学显微镜、拉曼光谱确定了CVD（化学气相沉积法）制备的不同厚度MoS₂的层数,采用拉曼分析结合原子力显微镜观测分析了由HIRFL提供的高能209Bi离子辐照CVD制备的单层MoS₂样品随辐照注量的损伤规律。随辐照注量增加,E_2g1和A_1g两种声子振动模式对应的拉曼峰逐渐蓝移,且拉曼特征峰强度减弱,这是由于带正电荷的209Bi辐照产生潜径迹型晶格缺陷吸附空气中氧分子而引入p型掺杂引起的。同时,在辐照注量为5×1010 ions/cm2的单层MoS₂的AFM图像中观察到潜径迹主要以凹坑形式出现,与机械剥离法观测到的凸起径迹明显不同,分析了不同制备工艺对径迹形貌的影响。比较了机械剥离法制备MoS₂样品的拉曼光谱和AFM成像的实验数据和结果,认为不同制备方法会影响单层或少层MoS₂的电子密度。The layer number of MoS₂ with different thickness was determined by the optical microscope and Raman spectra. And the damage effect of the CVD (chemical vapor deposition) prepared single-layer MoS₂ sample irradiated by 209Bi ions was analyzed by the combination of Raman analysis and AFM observations. With the increase of irradiation fluence, the Raman characteristic peaks of E_2g1 and A_1g corresponding to both phonon vibration modes gradually bluely shift, and the intensity of the peaks obviously decreased. This is due to the fact that the 209Bi ion irradiation results in the latent track type lattice defects and they adsorb the oxygen molecules in the air ended with the p-type doping. Meanwhile, from the AFM image of the mono-layer of irradiated MoS₂ under the 5×1010 ions/cm2, it can been seen that latent tracks mainly occur in the form of pits, which different from the hillock tracks observed by mechanical stripping method. The influence of different preparation technology to the track morphology is analyzed. Compared with the Raman and AFM results of MoS₂ prepared by mechanical stripping, it is considered that different preparation methods will affect the electron density in single or few layers of MoS₂.     

不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

在r面蓝宝石衬底上,采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜,在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO₂纳米颗粒与SiO₂钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO₂纳米颗粒钝化或SiO₂钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明,SiO₂纳米颗粒和SiO₂钝化层可使器件暗电流下降1~2个数量级,达到nA量级。光谱响应测试发现,在5 V偏压下,探测器在300 nm处具有陡峭的截止边,这表明其具有很好的深紫外特性,光谱响应提高了10³倍,紫外可见抑制比高达10⁵。     

Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Effect of 160 MeV Ni ion irradiation on PbS quantum dots

PbS quantum dots of average size 10 nm are encapsulated in a matrix (polyvinyl alcohol (PVA)) following chemical route. They are irradiated with 160 MeV Ni¹²⁺ ion beam with fluences 10¹²-10¹³ ions/cm². Red shift in the absorption response in the optical absorption spectra reveal size enhancement of the quantum dots after irradiation and was confirmed by transmission electron microscopy (TEM). Photoluminescence (PL) study was carried out with excitation wavelength 325 nm on both unirradiated and irradiated samples at different fluences and fluence-dependent surface states and excitonic emission is observed in the PL study. The Huang-Rhys coupling constant decreases significantly after swift heavy ion (SHI) irradiation and shows a decreasing trend with increase in ion fluence.     

Surface modifications by swift heavy-ion irradiation of indium phosphide

InP (001) samples were irradiated with 200 MeV Au ions at different fluences. The surface nanotopographical changes due to increasing fluence of swift heavy ions were observed by Atomic Force Microscopy (AFM), where the onset of a large increase in surface roughness for fluences sufficient to cause complete surface amorphization was observed. Transmission Electron Microscopy (TEM) was used to observe bulk-ion tracks that formed in InP, and high resolution TEM (HRTEM) revealed that single-ion tracks might not be amorphous in nature. Surface-ion tracks were observed by AFM in the form of ill-defined pits (hollows) of ~12 nm in diameter (width). In addition, Rutherford backscattering was utilized to follow the formation of disorder to amorphization in the irradiated material. The interpretation of the large increase in surface roughness with the onset of amorphization can be attributed to the plastic phenomena induced by the change of states from crystalline to amorphous by ion irradiation. The text was submitted by the authors in English.     

Modification of optical, chemical and structural response of CR-39 polymer by 50 MeV lithium ion irradiation

CR-39 polymer samples were irradiated with 50 MeV lithium ion beam; the fluence was varied in the range 10¹¹–10¹³ ionscm⁻². Irradiation effects were studied using UV–visible, FTIR spectroscopic and X-ray diffraction techniques. The observation of the recorded spectra shows that the detector is sensitive to swift ions irradiation and its UV absorption is influenced by the stopping power (dE/dx)_e. The FTIR spectra does not show any considerable changes due to the irradiation indicating that the detector is chemically stable. No appreciable change in the diffraction pattern of CR-39 polymer after irradiation upto the fluence level of 10¹³ ionscm⁻² is observed, showing its structural stability also.     

Effect of 100 MeV O7+ ion beam irradiation on structural,optical and electronic properties of SnO2 thin films

In this paper, we present the impact of swift heavy ion beam irradiation on the structural, optical and electronic properties of SnO₂ thin films. Thin films were deposited using the pulsed laser deposition technique on Al₂O₃ substrates. Atomic force microscopy, X-ray diffraction, UV–visible absorption and temperature-dependent resistivity measurements were performed to explore the morphological, structural, optical and electronic properties of the as-deposited and irradiated samples. The peak intensity of the (200) peak was found to decrease monotonously with increasing irradiation fluence. The band gap energy of the 1×10¹¹ ion/cm² irradiated sample was found to increase. The electrical resistivity of the samples showed a continuous increase with the irradiation fluence.     

Measurement of nanosize etched pits in SiO2 optical fiber conduit using AFM

Fission fragment tracks from ²⁵²Cf have been observed in SiO₂ optical fiber, using an atomic force microscope (AFM), after a very short chemical etching in hydrofluoric acid solution at normal temperature. The nuclear track starting and evolution process is followed by the AFM direct measurements on the material surface and beyond a fine layer of the surface material. The images of the scanned cones were determined observing the two predominant energies from ²⁵²Cf fission fragments and the development of the tracks in the 150 μm diameter optical fiber conduit.     

掺Yb硅酸盐玻璃的热漂白性能研究

采用传统高温熔融法制备了掺Yb硅酸盐玻璃, 玻璃组成为 60SiO₂-12Al₂O₃-28CaO-1.0 mol%Yb₂O₃. 将玻璃分成两组, 一组经总剂量3 kGy的Co⁶⁰γ辐射源辐射, 另一组做空白对照. 然后测试了玻璃未辐射、辐射后及热漂白后的吸收谱和近红外发光谱. 实验结果表明: 一定的热处理会使得玻璃在辐射过程中产生的色心缺陷发生分解, 即辐射后的玻璃在300–900 nm波段的吸收系数显著地降低了, 在400 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃吸收系数分别是0.93, 2.9, 1.89 cm^-1. 另外, 玻璃的近红外发光强度明显增强, 在1028 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃近红外发光相对强度分别是588, 261, 436, 从而极大地改善了玻璃的光学性能. 所以一定的热处理可以使辐射后的玻璃产生热漂白的现象. 研究结果为进一步发展抗辐射玻璃材料提供了新的实验依据.     

Carbon (70 MeV) and copper (120 MeV) ions irradiation effects in Makrofol-N

Makrofol-N polycarbonate was irradiated with carbon (70 MeV) and copper (120 MeV) ions to analyze the induced effects with respect to optical and structural properties. In the present investigation, the fluence for carbon and copper beams was kept in the range of 1×10¹¹– 1×10¹³ ions/cm² to study the swift heavy ion induced modifications. UV–VIS, FTIR and XRD techniques were utilized to study the induced changes. The analysis of UV–VIS absorption studies revealed that the optical energy gap was reduced by 17% on carbon irradiation, whereas the copper beam leads to a decrease of 52% at the highest fluence of 1×10¹³ ions/cm². The band gap can be correlated to the number of carbon atoms, N, in a cluster with a modified Robertson's equation. In copper (120 MeV) ions irradiated polycarbonate, the number of carbon atoms in a cluster was increased from 63 to 269 with the increase of ion fluence from 0 to 1×10¹³ ions/cm², whereas N is raised only up to 91 when the same polymer films were irradiated with carbon (70 MeV) ions under similar conditions. FTIR analysis showed a decrease in almost all characteristic absorption bands under irradiation. The formation of hydroxyl (? OH) and alkene (C?C) groups were observed in Makrofol-N at higher fluence on irradiation with both types of ions, while the formation alkyne end (R? C≡ CH) group was observed only after copper ions irradiation. The radii of the alkyne production of about 3.3 nm were deduced for copper (120 MeV) ions. XRD measurements show a decrease in intensity of the main peak and an increase of the average intermolecular spacing with the increase of ion fluence, which may be attributed to the structural degradation of Makrofol-N on swift ion irradiation.     

TiO2禁带宽度和光吸收系数对其光催化性能的影响

为了研究TiO₂禁带宽度和光吸收系数对其光催化性能的影响,使用Materials Studio的Dmol3和CASTEP模块分别对Ag⁺、Fe³⁺、Pt⁴⁺、La³⁺ 4种金属离子掺杂TiO₂的能带结构和光学性质进行分析。分子模拟表明:金属离子掺杂使TiO₂的禁带宽度变窄、吸收波长红移,相同光照条件下光吸收系数增加,影响了TiO₂的光催化性能。光催化反应实验表明:在254 nm照射条件下,TiO₂的禁带宽度为1.09 eV时光催化性能最好,TiO₂的光吸收系数越大,光催化性能越好。     

YVO_4∶Eu~(3+)@SiO_2核壳结构纳米复合材料的合成与表征

用沉淀法制备了尺寸约为8 nm的YVO4∶Eu3+纳米粒子,然后用反相微乳液法在YVO4∶Eu3+纳米粒子的表面包覆了一层Si O2壳。利用XRD、TEM、UV-Vis吸收光谱和光致发光光谱对合成的样品进行了表征。得到的复合物具有较好的核壳结构,通过改变硅酸四乙酯的用量可以改变Si O2壳的厚度。研究了Si O2壳对YVO4∶Eu3+发光性质的影响,结果表明:包覆和未包覆的样品在紫外光激发下都有Eu3+的特征发射;随着Si O2壳厚度的增加,发光强度和量子效率越来越低,Eu3+格位对称性越来越高。     

AFM and electronic transport studies of swift heavy ion irradiated Mn/p-Si bilayer structure

Mn/p-Si structures have been realised by electron beam evaporation of manganese on etched and cleaned p-Si wafers. Bilayer structures have been irradiated by swift heavy ions (of 100 MeV Fe⁷⁺ having a fluence of 1 × 10¹³ ions/cm²). The electronic transport features across the bilayer of the structure (i.e. I–V characteristics across the Mn/p-Si interface) show a significant increase of current (by two orders of magnitude) for the irradiated ones as compared to un-irradiated ones. I–V characteristics across the interface has also been recorded in presence of in-plane (i.e., along the plane of the interface) magnetic field which show a significant magnetic field sensitivity for the irradiated ones. The surface morphological studies from AFM show a granular structure with open face having micro-particles in it, prior to the irradiation and round shaped embedded granular structure after the irradiation. XRD data show the formation of manganese silicide (Mn₅Si₂). The results are understood in the realm of interfacial intermixing which is tailored by the swift heavy ion irradiation.     

Energy loss dependent transversal etching rates of heavy ion tracks in plastic

By the method of electrolytical etching track etching rates V_t and corresponding transversal track etching rates V_trans of single heavy ion tracks in thin Makrofol KG foils have been measured at ion energies from 10–480 MeV/u. Makrofol KG foils of 8 μm thickness were irradiated perpendicular to the surface with ⁷⁹Au and ⁵⁴Xe ions at specific energies with energy loss values of REL=(10–90) ^*10³ MeVcm²/g at GSI Darmstadt, Germany, and Lawrence Berkeley Lab., Cal., USA. Using the electrolytical etching method by measuring the resistance of the foil during the etching process (etching conditions: 6n NaOH, room temperature and controlled 50° C) the breakthrough time and track etching rates V_t, V_trans and V_m (bulk etching rate) were analysed. Response curves (V_t/V_m)-1 as a function of Restricted Energy Loss (REL), the maximum extension of the ion induced damage perpendicular to the ion path and the dimension of the ion track core depending on the deposited energy can be estimated.     

Study of color centers produced in thulium doped YLF crystals irradiated by electron beam and femtosecond laser pulses

In this work, we report the influence of the presence of photochromic and color centers in the photobleaching of thulium ions blue emission in YLF (YLiF₄) crystals doped with 1 mol% Tm (3+). The samples were irradiated at room temperature both with electron beam and high intensity ultrashort pulses from a Ti:Sapphire CPA laser system. In both irradiations the production of photochromic and color centers was observed via the absorption bands in the UV and visible ranges. Pure LiF and pure and oxygen doped YLF crystals were used to identify the color centers produced and their optical properties. From a phenomenological model it was possible to study the interaction between color centers and thulium ions, and their effect in photobleaching and photodarkening behaviors. Finally, the blue up laser level population was computed using a rate equation analysis.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.