Structures and relative stability of medium-sized silicon clusters. V. Low-lying endohedral fullerenelike clusters Si31-Si40 and Si45

We have performed unconstrained search for low-lying structures of medium-sized silicon clusters Si(31)-Si(40) and Si(45), by means of the minimum-hopping global optimization method coupled with a density-functional based tight-binding model of silicon. Subsequent geometric optimization by using density-functional theory with the PBE, BLYP, and B3LYP functionals was carried out to determine the relative stability of various candidate low-lying silicon clusters obtained from the unconstrained search. The low-lying characteristics of these clusters can be affirmed by comparing the binding energies per atom of these clusters with previously determined lowest-energy clusters(Si(n)) in the size range of 21相似文献   

Structural evolution of anionic silicon clusters SiN (20 <or= N <or= 45)

Results of a combined photoelectron spectroscopy and first-principles density-functional study of SiN- clusters in the size range 20 or= 20. For 28 相似文献   

Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

We performed a constrained search for the geometries of low-lying neutral germanium clusters Ge(N) in the size range of 21 < or = N < or = 29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N approximately 65.     

Structures and stability of medium-sized silicon clusters. III. Reexamination of motif transition in growth pattern from Si15 to Si20

It has been established from experiments that stable medium-sized ionic clusters Si15-Si20 are prolate in shape. Density-functional theories (DFTs) also predict that nearly all low-lying neutral clusters in this size range are prolate in shape. Moreover, most of them are built onto two generic structural motifs, either the tricapped-trigonal-prism (TTP) Si9 motif or the six/six Si6Si6 (sixfold-puckered hexagonal ring Si6 plus six-atom tetragonal bipyramid Si6) motif. However, it appears that the exact location of the TTP-to-six/six motif transition is dependent on the functional (e.g., PBE or BLYP) used in the DFT calculations. Here, we present total-energy calculations for two series of clusters (one series containing six/six motif and the other containing the TTP motif) in the size range of Si16-Si20. The calculations were based on all-electron DFT methods with a medium [6-311G (2d)] and a large (cc-pVTZ) basis sets, as well as coupled-cluster single and double substitutions (including triple excitations) [CCSD(T)] method with a modest (cc-pVDZ) basis set. In the DFT calculations, two popular hybrid density functionals, the B3LYP and PBE1PBE, were selected. It is found that the B3LYP total-energy calculations slightly favor the six/six motif, whereas the PBE1PBE calculations slightly favor the TTP motif. The CCSD(T) total-energy calculations, however, show that isomers based on the six/six motif are energetically slightly favorable in the size range of Si16-Si20. Hence, the TTP-to-six/six motif transition is more likely to occur at Si16.     

Structures and stability of medium silicon clusters. II. Ab initio molecular orbital calculations of Si12-Si20

Ab initio all-electron molecular-orbital calculations are carried out to study the structures and relative stability of low-energy silicon clusters (Si(n),n = 12-20). Selected geometric isomers include those predicted by Ho et al. [Nature (London) 392, 582 (1998)] based on an unbiased search with tight-binding/genetic algorithm, as well as those found by Rata et al. [Phys. Rev. Lett. 85, 546 (2000)] based on density-functional tight-binding/single-parent evolution algorithm. These geometric isomers are optimized at the M?ller-Plesset (MP2) MP2/6-31G(d) level. The single-point energy at the coupled-cluster single and double substitutions (including triple excitations) [CCSD(T)] CCSD(T)/6-31G(d) level for several low-lying isomers are further computed. Harmonic vibrational frequency analysis at the MP2/6-31G(d) level of theory is also undertaken to assure that the optimized geometries are stable. For Si12-Si17 and Si19 the isomer with the lowest-energy at the CCSD(T)/6-31G(d) level is the same as that predicted by Ho et al., whereas for Si18 and Si20, the same as predicted by Rata et al. However, for Si14 and Si15, the vibrational frequency analysis indicates that the isomer with the lowest CCSD(T)/6-31G(d) single-point energy gives rise to imaginary frequencies. Small structural perturbation onto the Si14 and Si15 isomers can remove the imaginary frequencies and results in new isomers with slightly lower MP2/6-31G(d) energy; however the new isomers have a higher single-point energy at the CCSD(T)/6-31G(d) level. For most Si(n) (n = 12-18,20) the low-lying isomers are prolate in shape, whereas for Si19 a spherical-like isomer is slightly lower in energy at the CCSD(T)/6-31G(d) level than low-lying prolate isomers.     

Geometries, stabilities, and growth patterns of the bimetal Mo2-doped Sin (n=9-16) clusters: a density functional investigation

The behaviors of the bimetal Mo-Mo doped cagelike silicon clusters Mo2Sin at the size of n=9-16 have been investigated systematically with the density functional approach. The growth-pattern behaviors, relative stabilities, and charge-transfer of these clusters are presented and discussed. The optimized geometries reveal that the dominant growth patterns of the bimetal Mo-Mo doped on opened cagelike silicon clusters (n=9-13) are based on pentagon prism MoSi10 and hexagonal prism MoSi12 clusters, while the Mo2 encapsulated Sin(n=14-16) frames are dominant growth behaviors for the large-sized clusters. The doped Mo2 dimer in the Sin frames is dissociated under the interactions of the Mo2 and Sin frames which are examined in term of the calculated Mo-Mo distance. The calculated fragmentation energies manifest that the remarkable local maximums of stable clusters are Mo2-doped Sin with n=10 and 12; the obtained relative stabilities exhibit that the Mo2-doped Si10 cluster is the most stable species in all different sized clusters. Natural population analysis shows that the charge-transfer phenomena appearing in the Mo2-doped Sin clusters are analogous to the single transition metal Re or W doped silicon clusters. In addition, the properties of frontier orbitals of Mo2-doped Sin (n=10 and 12) clusters show that the Mo2Si10 and Mo2Si12 isomers have enhanced chemical stabilities because of their larger HOMO-LUMO gaps. Interestingly, the geometry of the most stable Mo2Si9 cluster has the framework which is analogous to that of Ni2Ge9 cluster confirmed by recent experimental observation (Goicoechea, J. M.; Sevov, S. C. J. Am Chem. Soc. 2006, 128, 4155).     

Comparison of the growth patterns of Si(n) and Ge(n) clusters (n = 25-33)

We performed an unbiased search for low-energy structures of medium-sized neutral Si n and Ge n clusters ( n = 25-33) using a genetic algorithm (GA) coupled with tight-binding interatomic potentials. Structural candidates obtained from our GA search were further optimized by first-principles calculations using density functional theory (DFT). Our approach reproduces well the lowest-energy structures of Si n and Ge n clusters of n = 25-29 compared to previous studies, showing the accuracy and reliability of our approach. In the present study, we pay more attention to determine low-lying isomers of Si n and Ge n ( n = 29-33) and study the growth patterns of these clusters. The B3LYP calculations suggest that the growth pattern of Si n ( n = 25-33) clusters undergoes a transition from prolate to cage at n = 31, while this transition appears at n = 26 from the PBE-calculated results. In the size range of 25-33, the corresponding Ge n clusters hold the prolate growth pattern. The relative stabilities and different structural motifs of Si n and Ge n ( n = 25-33) clusters were studied, and the changes of small cluster structures, when acting as building blocks of large clusters, were also discussed.     

Gas-phase structures of neutral silicon clusters

Vibrational spectra of neutral silicon clusters Si(n), in the size range of n = 6-10 and for n = 15, have been measured in the gas phase by two fundamentally different IR spectroscopic methods. Silicon clusters composed of 8, 9, and 15 atoms have been studied by IR multiple photon dissociation spectroscopy of a cluster-xenon complex, while clusters containing 6, 7, 9, and 10 atoms have been studied by a tunable IR-UV two-color ionization scheme. Comparison of both methods is possible for the Si(9) cluster. By using density functional theory, an identification of the experimentally observed neutral cluster structures is possible, and the effect of charge on the structure of neutrals and cations, which have been previously studied via IR multiple photon dissociation, can be investigated. Whereas the structures of small clusters are based on bipyramidal motifs, a trigonal prism as central unit is found in larger clusters. Bond weakening due to the loss of an electron leads to a major structural change between neutral and cationic Si(8).     

Experimental and theoretical investigation on binary semiconductor clusters of Bi/Si, Bi/Ge, and Bi/Sn

Bi(m)M(n)- (M = Si, Ge, Sn) binary cluster anions are generated by using laser ablation on mixtures of Bi and M (M = Si, Ge, Sn) samples and studied by reflectron time-of-flight mass spectrometer (RTOF-MS) in the gas phase. Some magic number clusters are present in the mass spectra which indicate that they are in stable structures. For small anions (m + n < or = 6), their structures are investigated with the DFT method and the energetically lowest lying structures are obtained. For the binary anionic clusters with the same composition containing Si, Ge, and Sn, they share similar geometric and electronic structure in the small size except that BiSi3-, BiSi5-, Bi2Si2-, Bi2Si3-, and Bi4Sn2- are different for the lowest energetic structures, and the ground states for all the anions are in their lowest spin states. The calculated VDE (vertical detachment energy) and binding energy confirm the obviously magic number cluster of BiM4- (M = Si, Ge, Sn), which agrees with the experimental results.     

Investigation of Size-Selective Zr(2)@Si(n) (n = 16-24) Caged Clusters

The size-selective Zr(2)Si(n) (n = 16-24) caged clusters have been investigated by density functional approach in detail. Their geometries, relative stabilities, electronic properties and ionization potentials have been discussed. The dominant structures of bimetallic Zr(2) doped silicon caged clusters gradually transform to Zr(2) totally encapsulated structures with increase of the clustered size from 16 to 24, which is good agreement with the recent experimental result (J. Phys. Chem. A. 2007, 111, 42). Two novel isomers, i.e., naphthalene-like and dodecahedral Zr(2)Si(20) clusters, are found as low-lying conformers. Furthermore, the novel quasi-1D naphthalene-like Zr(n)Si(m) nanotubes are first reported. The second-order energy differences reveal that magic numbers of the different sized neutral Zr(2)Si(n) clusters appear at n = 18, 20 and 22, which are attributed to the fullerene-like, dodecahedral and polyhedral structures, respectively. The HOMO-LUMO gaps (>1 eV) of all the size-selective Zr(2)Si(n) clusters suggest that encapsulation of the bimetallic zirconium atoms is favorable for increasing the stabilities of silicon cages.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Ar n HF van der Waals clusters revisited. I. New low-energy isomeric structures for n=6-13

New low-lying isomeric structures of Ar(n)HF clusters are reported for n=6-13. They were determined using simulated annealing and evolutionary programming, for pairwise additive intermolecular potential energy surfaces. New global minima were found for the clusters with n=7, 10, 11. The new lowest-energy structure of Ar(7)HF and several new local minima for n=6, 7 clusters have the HF bound on a threefold surface site, consistent with the recent spectroscopic data for Ar(n)HF clusters in helium nanodroplets. A new type of low-energy local minima were determined for n=9-13 clusters.     

Molecular dynamics implementation in MSINDO: study of silicon clusters

Born-Oppenheimer molecular dynamics is implemented in the semiempirical self-consistent field molecular orbital method MSINDO. The method is employed for the investigation of the structure and dynamics of silicon clusters of various sizes. The reliability of the present parameterization for silicon compounds is demonstrated by a comparison of the results of simulated annealing and of density functional calculations of Si(n) clusters (n = 5-7). The melting behavior of the Si(7) cluster is investigated and the MSINDO results are compared to previous high-level calculations. The efficiency of the present approach for the treatment of large systems is demonstrated by an extensive simulated annealing study of the Si(45) and Si(60) clusters. New Si(45) and Si(60) structures are found and evaluated. The relative stability of various energy minimum structures is compared with density functional calculations and available literature data.     

Photoelectron spectroscopy and density functional calculations of CuSi(n)- (n = 4-18) clusters

We conducted a combined anion photoelectron spectroscopy and density functional theory study on the structural evolution of copper-doped silicon clusters, CuSi(n)(-) (n = 4-18). Based on the comparison between the experiments and theoretical calculations, CuSi(12)(-) is suggested to be the smallest fully endohedral cluster. The low-lying isomers of CuSi(n)(-) with n ≥ 12 are dominated by endohedral structures, those of CuSi(n)(-) with n < 12 are dominated by exohedral structures. The most stable structure of CuSi(12)(-) is a double-chair endohedral structure with the copper atom sandwiched between two chair-style Si(6) rings or, in another word, encapsulated in a distorted Si(12) hexagonal prism cage. CuSi(14)(-) has an interesting C(3h) symmetry structure, in which the Si(14) cage is composed by three four-membered rings and six five-membered rings.     

Multiple aromaticity and antiaromaticity in silicon clusters.

A series of silicon clusters containing four atoms but with different charge states (Si4(2+), Si4, Si4(2-), and NaSi4-) were studied by photoelectron spectroscopy and ab initio calculations. Structure evolution and chemical bonding in this series were interpreted in terms of aromaticity and antiaromaticity, which allowed the prediction of how structures of the four-atom silicon clusters change upon addition or removal of two electrons. It is shown that Si4(2+) is square-planar, analogous to the recently discovered aromatic Al4(2-) cluster. Upon of two electrons, neutral Si4 becomes sigma-antiaromatic and exhibits a rhombus distortion. Adding two more electrons to Si4 leads to two energetically close structures of Si4(2-): either a double antiaromatic parallelogram structure or an aromatic system with a butterfly distortion. Because of the electronic instability of doubly charged Si4(2-), a stabilizing cation (Na+) was used to produce Si4(2-) in the gas phase in the form of Na+[Si4(2-)], which was characterized experimentally by photoelectron spectroscopy. Multiple antiaromaticity in the parallelogram Na+[Si4(2-)] species is highly unusual.     

Structure of hydrogenated silicon clusters. Medium-sized clusters

The structures of the Si_nH_m clusters containing 10 to 70 silicon atoms and different numbers of hydrogen atoms are calculated in the MINDO/3 approximation using the Monte Carlo technique. The geometry optimization of the clusters showed the existence of several structural varieties that determine the optimal geometry of the clusters differing in size and hydrogen content. Small clusters (n < 20) with various geometrical configurations often have a hollow structure if the number of silicon atoms in the cluster is more than 12. For 20 ≤ n < 60 and the hydrogen content m ≤ n, hollow spheroidal geometry is most favorable. Staring from n ≈ 56−60, diamond structures are more favorable. The ratio c = m/n < 1, at which the spheroidal structure remains optimal, decreases with further increase in n.     

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.     

Photodissociation of metal-silicon clusters: encapsulated versus surface-bound metal

Metal-silicon cluster cations of the form MSi(n)+ (M = Cu, Ag, Cr) are produced in a molecular beam with pulsed laser vaporization. These species are mass-selected in a reflectron time-of-flight spectrometer and studied with laser photodissociation at 532 and 355 nm. For the noble metals copper and silver, photodissociation of the n = 7 and 10 clusters proceeds primarily by the loss of metal atoms, indicating that the metal is not located within the interior of silicon cages, and that metal-silicon bonding is weaker than silicon-silicon bonding. Chromium-silicon clusters for n = 7 also lose primarily the metal atom, but at n = 15 and 16 these dissociate via the loss of silicon, producing smaller metal-silicon species. This behavior is consistent with stronger metal-silicon bonding and encapsulated metal structures, as suggested previously by theory. MSi6(+) cations are produced efficiently in all of these photodissociation processes, indicating that these species have enhanced stability compared to other small clusters. Improved values are obtained for the ionization potentials of Si7 and Si10.     

Structures and stability of lithium monosilicide clusters SiLin (n = 4–16): What is the maximum number,magic number,and core number for lithium coordination to silicon?

In the coordination, hypervalent and cluster chemistry, three important characteristic properties are the maximum coordination number, magic number, and core coordination number. Yet, few studies have considered these three numbers at the same time for an ML(n) cluster with n larger than 8. In this article, we systematically studied the three properties of SiLi(n) (n = 4-16) clusters at the B3LYP/6-31G(d), B3LYP/6-311++G(2d), and CCSD(T)/6-311++G(3df)//B3LYP/6-311++G(2d) (for energy only) levels. Various isomeric forms with different symmetries were calculated. For each SiLi(n) (n = 4-9), silicon cohesive energy (cE) from SiLi(n) --> Si + Li(n) reaction, vertical ionization potential (vIP), and vertical electron affinity (vEA) were obtained for the lowest-energy isomer. We found that the maximum Li-coordination number of Si is 9, which is the largest number among the known MLi(n) clusters. All cE, vIP, and vEA values predicted that 6 is the magic Li-coordination number of Si. For small SiLi(n) (n < or = 6) clusters, Li atoms favor direct coordination to Si, whereas for larger SiLi(n) (n > or = 7) clusters, there is a core cluster that is surrounded by excessive Li atoms. The core Li-coordination number is 6 for SiLi(n) (n = 7,8), 7 for SiLi(n) (n = 9,10), 8 for SiLi(n) (n = 11-15) and 9 for SiLi(n) (n > or = 16). Through the calculations, we verified the relationship between the structure and stability of SiLi(n) with the maximum coordination number, magic number, and core coordination number.     

Disparate effects of Cu and V on structures of exohedral transition metal-doped silicon clusters: a combined far-infrared spectroscopic and computational study

The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bare silicon clusters, Cu favors adsorption to the neutral or cationic bare clusters in a lower coordination site. The different behavior of the two transition metals becomes evident in the structures of Si(n)M(+) (n = 4-11 for M = V, and n = 6-11 for M = Cu), which are investigated by density functional theory and, for several sizes, confirmed by comparison with their experimental vibrational spectra. The spectra are measured on the corresponding Si(n)M(+)·Ar complexes, which can be formed for the exohedrally doped silicon clusters. The comparison between experimental and calculated spectra indicates that the BP86 functional is suitable to predict far-infrared spectra of these clusters. In most cases, the calculated infrared spectrum of the lowest-lying isomer fits well with the experiment, even when various isomers and different electronic states are close in energy. However, in a few cases, namely Si(9)Cu(+), Si(11)Cu(+), and Si(10)V(+), the experimentally verified isomers are not the lowest in energy according to the density functional theory calculations, but their structures still follow the described growth mechanism. The different growth patterns of the two series of doped Si clusters reflect the role of the transition metal's 3d orbitals in the binding of the dopant atoms.