Preparation of epitaxial La0.6Ca0.4Mn1−xFexO3 (x = 0, 0.2) thin films: Variation of the oxygen content

Perovskite thin films with a nominal composition of La_0.6Ca_0.4Mn_1−xFe_xO₃ (x = 0, 0.2) were deposited by pulsed reactive crossed beam laser ablation. The film properties, such as electrical conductivity and magnetoresistance are studied as a function of the oxygen content and substrate type. The oxygen content of the thin films was determined by Rutherford Backscattering and controlled by varying the background gas pressure, pressure of the gas pulse and by using alternatively O₂ and N₂O as the gas pulse.

LaAlO₃ and SrTiO₃ were used as substrates at deposition temperature of 650 °C. The grown films were analyzed by X-ray diffraction in order to optimize the growth conditions, i.e. to obtain epitaxial thin films. Thin films doped with 20% Fe were grown under the same experimental conditions as the undoped LCMO films and the effect of the doping on the structural and transport properties of the thin films has been investigated.

The temperature of the metal–insulator transition was measured as a function of the oxygen content and substrate type.     

Synthesis and properties of oxynitrides (La,Sr)Ti(O,N)3 thin films

We report on the synthesis, optical and electrical properties of thin films of La_xSr_(1−x)Ti(O,N)₃, x = 0, 0.25, 0.50, 0.75 and 1. The films were grown by a soft chemistry process from polymeric precursor solutions, which were deposited by spin coating on 100-oriented SrTiO₃ substrates. After drying, the organic matrix was burned at 400 °C. These steps were repeated six times to obtain a reasonable thickness of the films. Afterwards, the samples were heated in a tube furnace at 950 °C in flowing ammonia. The oxynitride films showed different colours from red-orange for LaTiO₂N to greenish-blue for SrTiO₃:N. The films were characterised by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV–vis spectroscopy, secondary ion mass spectrometry and electrical measurements. The results show that the films are polycrystalline and have the perovskite structure. Their thickness is about 440 nm and the average roughness value is 7.5 nm. UV–vis transmittance measurements showed a strong decrease in the band gap values for the oxynitrides compared to the respective oxides. The values change from approximately 3.2 eV for the oxides to an average value of 2.4 eV for the oxynitrides. The electrical measurements indicate a change in the electrical behaviour from insulator for LaTiO₂N to semiconductor for SrTiO₃:N.     

Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering

This paper reports on the first study of structural and optical properties of reactively RF-sputtered lanthanum titanium oxynitride thin films using an original oxynitride LaTiO₂N target and an argon–nitrogen mixture as reactive plasma. The depositions were carried out by varying the process parameters such as RF power, total pressure, argon and nitrogen rates and substrate temperature. Wavelength dispersive spectrometry (WDS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–visible spectroscopy show that titanate lanthanum oxynitride compounds can exist as a domain composition, LaTiO_xN_y. Films prepared in pure argon are oxide films, transparent, amorphous and insulating. Polycrystalline and [001]-textured oxynitride thin films, with different nitrogen contents, can be deposited on SrTiO₃ substrates, depending on the sputtering conditions. As expected, the introduction of nitrogen in the coatings leads to a band gap narrowing. Oxynitrides' thin films are thus coloured and semiconductive.     

Pure and doped lanthanum cobaltites obtained by combustion method

We report the synthesis of La_1−xSr_xCoO₃ nanopowders by solution combustion method using metal nitrates and -alanine (alanine method) or urea (urea method) as fuel. The influence of metal nitrates/organic substance molar ratio and the type of fuel was investigated. The isolated complex precursors were characterized by atomic absorption spectroscopy (AAS), FT-IR spectra and DTA–TG analysis. The La_1−xSr_xCoO₃ (x = 0–0.3) powders were characterized by X-ray diffraction (XRD), scanning electron microscopy–energy-dispersive X-ray analysis (SEM–EDX), as well as by specific surface area measurements. XRD patterns indicate the formation of single-phase LaCoO₃ (rhombohedral) when as-synthesized powders were calcined at 873 K, 3 h in the case of the alanine method and at 1073 K, 3 h for urea-based system. Also, strontium doped lanthanum cobaltites obtained by both methods at 1273 K are single phase with rhombohedral perovskite-like structure as XRD data have proved. SEM investigation of pure and doped lanthanum cobaltites reveal that the samples prepared by both methods have fine particles with tendency of agglomerates formation with different shapes, spongy aspect and high porosity. La_1−xSr_xCoO₃ nanopowders obtained by alanine method have larger specific surface area values than those prepared by urea method.     

脉冲激光沉积制备SrSn1-xCoxO3外延薄膜的微结构表征及能带调控

钙钛矿结构SrSnO₃因其独特的介电和半导体性质而备受关注,通过掺杂可显著调控其电学、磁学性能,拓宽其应用范围。本研究在单晶SrTiO₃(001)衬底上通过脉冲激光方法外延生长了SrSn_1-xCo_xO₃ (x = 0, 0.16, 0.33, 0.5) (SSCO)薄膜,探究了Co含量对薄膜结晶性、微观结构、光学性能以及介电性能的影响。结果表明, SrSn_1-xCo_xO₃薄膜可在SrTiO₃(001)衬底上外延生长, Co掺杂不会导致薄膜结晶质量的劣化。薄膜表面形貌平整、致密,膜厚200 nm,表面粗糙度为0.44 nm。随薄膜中Co掺杂量增加,薄膜透过率从90%降至25%,光学带隙从4.24 eV降至2.44 eV。介电性能测试表明,掺杂薄膜在10⁶Hz时介电常数为70.1,比无掺杂SrSnO₃薄膜提高57%。室温时SSCO薄膜表面电阻率为172 MΩ,在1000℃范围内薄膜结构稳定。     

Vanadium(IV) oxide thin films on glass and silicon from the atmospheric pressure chemical vapour deposition reaction of VOCl3 and water

The dual source atmospheric pressure chemical vapour deposition (APCVD) reaction of VOCl₃ and H₂O was used to prepare thin films of vanadium oxides on glass and silicon substrates. The thin films were characterised by X-ray diffraction, Raman spectroscopy X-ray photoelectron spectroscopy and scanning electron microscopy. At reactor temperatures above 600 °C with a gas-phase excess of water over VOCl₃, vanadium(IV) oxide thin films were produced which show a thermochromic transition temperature of 67 °C. The APCVD process is directly compatible with high throughput float-glass production enabling the use of a thin film of VO₂ as an intelligent window coating. With reactor temperatures below 600 °C or with a gas-phase excess of VOCl₃ over water, V₂O₅ thin films were produced. Vanadium(IV) oxide thin films could also be prepared on silicon substrates from the APCVD reaction of VOCl₃ and H₂O, which opens up further technological applications for the APCVD of VO₂ thin films.     

Bi1-xFexVO4薄膜光阳极的制备及光电化学性能

采用一步滴涂法在掺氟二氧化锡(FTO)导电玻璃上制备了Bi_1-xFe_xVO₄(x=0, 0.05, 0.10, 0.25, 0.40)薄膜, 表征了其结构、 形貌、 光学以及光电化学方面的性质. 结果表明, 掺入Fe后Bi_1-xFe_xVO₄薄膜的光电流密度与 BiVO₄薄膜相比均有所提高, 其中25% Fe-BiVO₄薄膜表现出最优的光电化学性能. 在0.1 mol/L磷酸缓冲溶液(pH=7.0)中, 1.23 V(vs. RHE)电势下25% Fe-BiVO₄薄膜的光电流密度为0.50 mA/cm², 与BiVO₄薄膜的0.15 mA/cm²相比提高了3倍多. 结合X射线衍射(XRD)、 拉曼光谱(Raman)和X射线光电子能谱(XPS)表征结果证实Fe³⁺以FeVO₄的形式存在于Bi_1-xFe_xVO₄薄膜中, 形成了BiVO₄/FeVO₄复合物薄膜. 紫外-可见光谱(UV-Vis)结果显示, 所有Bi_1-xFe_xVO₄薄膜的禁带宽度均为2.4~2.5 eV. 25% Fe-BiVO₄薄膜光电化学性能的提升主要归因于光生载流子转移效率(η_trans)和分离效率(η_sep)的提高. 能级结构图表明, BiVO₄和FeVO₄之间可以形成Type Ⅱ型能级结构排列, 可以促进光生载流子的分离与转移, 是25% Fe-BiVO₄薄膜光电化学性能提升的内在机理.     

PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

Triphosphane formation from the terminal zirconium phosphinidene complex [Cp2Zr=PDmp(PMe3)] (Dmp=2,6-Mes2C6H3) and crystal structure of DmpP(PPh2)2

The new terminal phosphinidene complex [Cp₂Zr=PDmp(PMe₃)] (Dmp=2,6-Mes₂C₆H₃; 1) was prepared in 81% yield by the reaction of [Li(Et₂O)][P(H)Dmp] with [Cp₂Zr(Me)Cl] in the presence of excess PMe₃. Compound 1 reacts with Ph₂PCl to produce selectively the sterically congested triphosphane DmpP(PPh₂)₂ (2) and [Cp₂ZrCl₂] in high yields. The structure of 2 obtained by X-ray diffraction analysis of a single crystal reveals phosphorus–phosphorus bond lengths of 2.251(2) and 2.234(2) Å and a PPP bond angle of 105.46(6)°.     

Hydrothermal synthesis, crystal structure and characterization of [Zn(H2O)4]2 [H2As6V15O42(H2O)]·2H2O

The compound [Zn(H₂O)₄]₂[H₂As₆V₁₅O₄₂(H₂O)]·2H₂O (1) has been synthesized and characterized by elemental analysis, IR, ESR, magnetic measurement, third-order nonlinear property study and single crystal X-ray diffraction analysis. The compound 1 crystallizes in trigonal space group R3, a=b=12.0601(17) Å, c=33.970(7) Å, γ=120°, V=4278.8(12) Å³, Z=3 and R1(wR2)=0.0512 (0.1171). The crystal structure is constructed from [H₂As₆V₁₅O₄₂(H₂O)]⁴⁻ anions and [Zn(H₂O)₄]²⁺ cations linked through hydrogen bonds into a network. The [H₂As₆V₁₅O₄₂(H₂O)]⁶⁻ cluster consists of 15 VO₅ square pyramids linked by three As₂O₅ handle-like units.     

Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSiBuMe2] as precursors for MOCVD of hafnium silicate films

Hafnium β-diketonatochlorides HfCl₂(thd)₂ (1), HfCl(thd)₃ (2) as well as β-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)₂[N(SiMe₃)₂]₂ (3), Hf(thd)₂(OSiMe₃)₂ (4) and Hf(thd)₂(OSi^tBuMe₂)₂ (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, ¹H NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSi_xO_y films by pulsed liquid injection MOCVD on Si(1 0 0) and R plane sapphire. The as-deposited at 600–800 °C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7–0.85) and smooth.     

Synthesis, characterization and thermal investigation of M[M(C2O4)3]·xH2O (x=4 for M=Cr(III); x=2 for M=Sb(III) and x=9 for M=La(III))

The complexes, M[M(C₂O₄)₃]·xH₂ O, where x=4 for M=Cr(III), x=2 for M=Sb(III) and x=9 for M=La(III) have been synthesized and their thermal stability was investigated. The complexes were characterized by elemental analysis, IR and electronic spectral data, conductivity measurement and powder X-ray diffraction (XRD) studies. The chromium(III)tris(oxalato)chromate(III)tetrahydrate (COT), Cr[Cr(C₂ O₄)₃]·4H₂O, released water in a stepwise fashion. Removal of the last trace of water was accompanied by a partial decomposition of the oxalate group. Thermal investigation using TG, DTG and DTA techniques in air produced Cr₂O₃ at 858°C through the intermediate formation of Cr₂O₃ and CrC₂O₄ at around 460°C. While DSC study in nitrogen up to 670°C produced a mixture of Cr₂O₃ and CrC₂O₄. In antimony(III)tris(oxalato)antimonate(III)dihydrate (AOD), Sb[Sb(C₂O₄)₃]·3H₂O the dehydration took place during the decomposition of precursor at 170–290°C and finally at ca. 610°C Sb₂ O₅ along with trace amounts of Sb₂O₄ were produced. Trace amount of Sb₂O₃ and Sb along with Sb₂O is proposed as the end product at 670°C of AOD in nitrogen. The oxide La₂O₃ is formed at 838°C from the study with TG, DTG and DTA in air of lanthanum(III)tris(oxalato)lanthanum(III)nonahydrate (LON), La[La(C₂O₄)₃]·9H₂O. Intermediate dioxycarbonate, La₂O₂CO₃ was generated at 526°C prior to its decomposition to lanthanum oxide in air; whereas in N₂ the formation of La₂(CO₃)₃ at 651°C was proposed. The thermal parameters have been evaluated for each step of the dehydration and decomposition of COT, AOD and LON using five non-mechanistic equations i.e. Flynn and Wall, Freeman and Carroll, Modified Freeman and Carroll, Coats–Redfern and MacCallum–Tanner equations. Kinetic parameters, such as, E^*, k_o, ΔH^*, ΔS^* etc. were also supplemented by DSC studies in nitrogen for all the three complexes. Some of the intermediate species have been identified by analytical and powder XRD studies. Tentative schemes has been proposed for the decomposition of all three compounds in air and nitrogen.     

Properties of chemical vapour deposited nanocrystalline TiO2 thin films and their use in dye-sensitized solar cells

Nanocrystalline titanium dioxide (TiO₂) thin films have been prepared using titanium(IV) isopropoxide as a precursor onto the glass and fluorine doped tin oxide coated glass substrates by chemical vapour deposition technique at 400 °C substrate temperature. X-ray diffraction study confirms the polycrystalline nature of TiO₂ with anatase phase having tetragonal crystal structure. The films are 975 nm thick and transparent having transmittance grater than 80%. Atomic force microscopy (AFM) images reveal the nanocrystalline morphology with grain size of 200 nm. The film shows a sharp absorption edge near 350 nm. Photoelectrochemical study shows that TiO₂ thin film sensitized with Brown Orange dye is found to exhibit relatively maximum I_sc and V_oc among the studied dyes. The values of fill factor (FF) and efficiency (η) for the dye-sensitized solar cell (Brown Orange dye-sensitized TiO₂) are 0.54 and 0.17%, respectively. Such films would serve as better prospects for dye-sensitized solar cells.     

Das Reaktionsverhalten von Cp2NbCl2 gegenüber WF6—Struktur von [Cp2NbCl2]4[WF6]2[WCl6]

The oxidation of Cp₂NbCl₂ with pure WF₆ in SO₂ solution yielded the cationic metallocene species [Cp₂NbCl₂]⁺[WF₆]⁻ essentially in quantitative yield. The same reaction carried out in the presence of either equimolar amounts or a two-fold excess of HCN led to the preparation of the new niobocenium salt [Cp₂NbCl₂]₄⁺[WF₆]²⁻ which was studied by single crystal X-ray diffraction. This compound represents the first example of a structurally characterized metallocene-WF₆⁻ complex, and crystallizes in the tetragonal system: space group, P4₁2₁2(No. 92), a = 11.083(8) Å, c = 48.285 (9) Å; Z = 8; R = 0.0759, R_W = 0.0841. ab]Die Oxidation von Cp₂NbCl₂ mit reinem WF₆ führt in SO₂-Lösung zur Synthese von [Cp₂NbCl₂ ]⁺[WF₆]⁻ in nahezu quantitativer Ausbeute. Die analoge Reaktion führt unter Anwesenheit der äquimolaren Menge oder eines zweifachen Überschusses an HCN zur Ausbildung des Niobocenium-Komplexsalzes [Cp₂NbCl₂]₄⁺ [WF₆]₂⁻[WCl₆]²⁻, von dem eine Röntgenstrukturanalyse angefertigt wurde. Diese Verbindung repräsentiert den ersten structurell charakterisierten Vertreter eines Metallocen-WF₆⁻-Komplexes und kristallisiert im tetragonalen System: Raumgruppe P4₁2₁2 (Nr. 92), a = 11.083(8) Å, c = 48.285(9) Å; Z = 8; R = 0.0759, R_W = 0.0841. kw]Niobium; X-ray diffraction; Oxidation; Metallocenes     

Time-resolved vibrational cemiluminescence: Rate constants for the reaction F + HC1 → HF + Cl and for the relaxtion of HF(v = 3) by HCl, CO2, N2O, CO, N2 and O2

The reaction: F + HCl→ HF (v 3) + Cl (1), has been initiated by photolysing F₂ using the fourth-harmonic output at 266 nm from a repetitively pulsed Nd: YAG laser By analysing the time-dependence of the HF(3,0) vibrational chemiluminescence, rate constants have been determined at (296 ± 5) K for reaction (1), k₁ = (7.0 ± 0.5) × 10⁻¹² cm³ molecule⁻¹ s⁻¹, and for the relaxation of HF(v = 3) by HCl, CO₂, N₂O, CO, N₂ and O₂: k_HCl = (1.18 ±0.14) × 10⁻¹¹ k_CO2 = (1.04 ± 0. 13) × 10⁻¹², k_N2O = (1.41 ± 0.13) × 10⁻¹¹ k_CO = (2.9 ± 0.3) × (10⁻¹², k_N2 = (7.1 ± 0.6) × 10⁻¹⁴ and k_O2 = (1.9 ± 0.6) × 10⁻¹⁴ cm³molecule⁻¹s⁻¹.     

Synthesis, structure and oxygen nonstoichiometry of La0.4Sr0.6Co1−yFeyO3−δ

The samples of La_0.4Sr_0.6Co_1−yFe_yO_3−δ (y = 0.2 and 0.4) were prepared using both conventional ceramic technique and nitrate–citrate precursors technique. The phase identification was made by X-ray diffraction method. The refinement of structural parameters from the XRD and neutron diffraction measurements was performed by full profile Rietveld analysis. Neutron diffraction showed that both samples possess distorted perovskite-type structure. Oxygen nonstoichiometry was measured by chemical analysis and thermogravimetry (TG) analysis in the range 20 ≤ T/°C ≤ 900 and 2E-5 ≤ pO₂/atm ≤ 4E-1. TG-experiments indicate a relatively fast and reversible oxygen exchange at pO₂ > 1E-2 atm. Mass saturation occurs at T < 300 °C upon cooling. The absolute value of oxygen nonstoichiometry was determined by iodometric titration measurements. It was found that both samples have practically stoichiometric composition at 300 °C in air and δ increases with increasing temperature and decreasing oxygen partial pressure.     

Reactions and X-ray crystal structure of (3-cyano-2,4-pentanedionato-N)pentaamminecobalt(III) perchlorate chloride dihydrate

The pentaamminecobalt(III) complex with the 3-cyano-2,4-pentanedionate anion coordinated through the nitrile nitrogen has been characterized by X-ray crystallography. The crystals of [(NH₃)₅CoNCacac](Cl)(ClO₄)·2H₂O are triclinic, space group P , a = 10.245(2) Å, b = 14.071(4) Å, c = 6.971(2) Å, = 90.03(3)°, β = 109.86(2)°, γ = 108.91(2)°, V= 887.1 ų, Z = 2, D_c = 1.64 g cm⁻³, F(000) = 456, Mo-K radiation, λ = 0.71069 Å, μ(Mo-K) = 12.7 cm⁻¹. The structure was determined by the heavy-atom method, and refined by block-diagonal least-squares calculations, R = 0.0537, R_w = 0.0607, for 2499 observed reflections. Principal dimensions are: Co---N(NH₃) trans to NCacac⁻ 1.940(5), other Co---N(NH₃) 1.967(2), Co---N(NCacac⁻) 1.911(5) Å. The pendant acac moiety is best described in terms of a delocalized bond network with, for example, C---C distances in the range 1.44–1.52(1) Å. Several reactions involving this free acac group are also described including the preparation and characterization of the dimeric species pentaamminecobalt(III) - μ - (3 - cyano - 2,4 - pentanedionato) - bis(propylenediamine) cobalt(III) perchlorate.     

Hydrothermal syntheses and crystal structures of bimetallic cluster complexes [{Cd(phen)2}2V4O12]·5H2O and [Ni(phen)3]2[V4O12]·17.5H2O

The hydrothermal reactions of vanadium oxide starting materials with divalent transition metal cations in the presence of nitrogen donor chelating ligands yield the bimetallic cluster complexes with the formulae [{Cd(phen₂)₂V₄O₁₂]·5H₂O (1) and [Ni(phen)₃]₂[V₄O₁₂]·17.5H₂O (2). Crystal data: C₄₈H₅₂Cd₂N₈O₂₂V₄ (1), triclinic. a=10.3366(10), b=11.320(3), c=13.268(3) Å, =103.888(17)°, β=92.256(15)°, γ=107.444(14)°, Z=1; C₇₂H₁₃₁N₁₂Ni₂O_29.5V₄ (2), triclinic. a=12.305(3), b=13.172(6), c=15.133(4), =79.05(3)°, β=76.09(2)°, γ=74.66(3)°, Z=1. Data were collected on a Siemens P4 four-circle diffractometer at 293 K in the range 1.59° <θ<26.02° and 2.01°<θ<25.01° using the ω-scan technique, respectively. The structure of 1 consists of a [V₄O₁₂]⁴⁻ cluster covalently attached to two {Cd(phen)₂}²⁺ fragments, in which the [V₄O₁₂]⁴⁻ cluster adopts a chair-like configuration. In the structure of 2, the [V₄O₁₂]⁴⁻ cluster is isolated. And the complex formed a layer structure via hydrogen bonds between the [V₄O₁₂]⁴⁻ unit and crystallization water molecules.     

引入应力的锐钛矿TiO_2(001)薄膜的外延生长

锐钛矿TiO_2(001)(anataseTiO_2(001),简记为ATO)表面因其优异的催化活性受到了广泛的关注。理论计算结果表明,ATO表面应力导致的晶格畸变可能会增强该表面的催化活性。因此有必要研究应力对ATO表面结构的影响。本文利用BaTiO_3(001)(简记为BTO)与ATO之间存在较大的晶格失配度,将ATO薄膜外延生长在BTO衬底上从而引入应力,研究了存在应力情况下的ATO薄膜的结构特征。实验中,利用脉冲激光沉积方法在Nb掺杂的SrTi O_3(001)(简记为STO)单晶衬底上制备了ATO/BTO/STO外延薄膜。X射线衍射(XRD)和扫描透射电子显微术(STEM)结果表明,作为应力引入层的BTO薄膜厚度约为4–6nm时,能够部分地将应力引入到ATO薄膜中。X射线光电子能谱(XPS)结果显示,ATO薄膜合适的厚度应大于15 nm,从而降低从衬底反向扩散至表面的Sr和Ba原子的浓度;Ti 2p的高分辨XPS谱仅呈现出Ti~(4+)峰,表明ATO表面Ti原子为完全氧化的价态。ATO外延薄膜表面的扫描隧道显微术(STM)图像仍然呈现为(1×4)重构的结构,但在(1×4)重构的脊上存在明暗交替并具有一定周期性的特征。根据完全氧化的"增氧原子模型"(ad-oxygen model,AOM),脊上观察到的明暗交替特征可归因于表面应力导致的"TiO_2"空位缺陷结构。     

Fabrication of solid thin film electrolyte and LiCoO2 by aerosol flame pyrolysis deposition

Aerosol flame pyrolysis deposition method was applied to deposit the oxide glass electrolyte film and LiCoO₂ cathode for thin film type Li-ion secondary battery. The thicknesses of as-deposited porous LiCoO₂ and Li₂O–B₂O₃–P₂O₅ electrolyte film were about 6 μm and 15 μm, respectively. The deposited LiCoO₂ was sintered for 2 min at 700 °C to make partially densified cathode layer, and the deposited Li₂O–P₂O₅–B₂O₃ glass film completely densified by the sintering at 700 °C for 1 h. After solid state sintering process the thicknesses were reduced to approximately 4 μm and 6 μm, respectively. The cathode and electrolyte layers were deposited by continuous deposition process and integrated into a layer by co-sintering. It was demonstrated that Aerosol flame deposition is one of the good candidates for the fabrication of thin film battery.