Calculation of Mutual Coupling between Two RLTs in Millimeter Wave VCO Waveguide Cavities with Mode Matching Methods

In the design of millimeter wave voltage control oscillators (VCOs), mutual coupling effect is of great importance for it influences the tuning and power characteristics of VCOs significantly. In this paper, mutual coupling between two in-line radial line transformers (RLTs) in rectangular waveguide cavities of millimeter wave VCOs has been evaluated with mode matching methods. Mutual coupling characteristics varying with various parameters of resonate cavity such as the distance between two diodes, the position of sliding short, the radii of bias pins, the radii of RLTs, and the height of diodes are presented. Some useful conclusions concerning two RLTs configuration have been derived, which is helpful to design millimeter wave VCO of this structure.     

A Gunn-Diode Active Leaky-Wave Frequency Scanning Antenna

A frequency tunable active leaky-wave scanning antenna using Gunn-diode voltage control oscillator (VCO) as source is developed. The frequency tuning controlled by changing either the varactor diode dc bias or the Gunn diode dc bias is demonstrated. The measured scanning angle of active antenna is close to 15 degree as the Gunn VCO frequency tuned from 12.58GHz to 12.98GHz. To excite the first higher order mode of the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the middle line of the microstrip leaky wave antenna. This is a prototype of frequency scanning antenna using two terminal device, which can be easily scaled up to millimeter wave frequency region.     

Simulation Investigation of Millimeter Wave Varactor-tuned Transmission Cavity-stabilized Oscillator

A new circuit configuration for millimeter wave varactor-tuned transmission cavity-stabilized oscillator has been proposed in this paper. Compared to conventional varactor-tuned reflection cavity-stabilized oscillator, in this configuration, a high quality factor transmission cavity directly coupled to varactor diode is employed to improve the performances of the oscillator. The operation frequency of this oscillator can be tuned by varying the resonant frequency of the transmission cavity through changing bias voltage of the varactor diode. An equivalent circuit model for the oscillator has been presented in order to theoretically investigate the performance characteristics of the oscillator. On the basis of this model, electrical tuning characteristics have been studied. Mode jumping phenomena during electrical tuning process have been analyzed for obtaining stable operations of the oscillator. The analytical formulae of quality factor and efficiency have been derived in terms of relevant circuit parameters. Particular emphasis has been paid on several circuit parameters which have a substantial impact on circuit performance. Some design considerations have been pointed out according to the simulation results, which are useful to the design and fabrication of this type of oscillators.     

Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays

High Electron Mobility (HEM) varactor structures have been studied for millimeter-wave monolithic diode-grid frequency tripler array applications. The improved HEM varactor diode structures provide a highly nonlinear C-V characteristic (i.e., a steep slope of the C-V curve and a large capacitance ratio) which produces high harmonic generation efficiency and reduce the power requirement for efficiently pumping each device. The effects of the light illumination on the C-V characteristics of the Barrier-Intrinsic-N⁺ (BIN) varactor diode have also been studied and the results will be discussed in this paper. In the development of a monolithic diode-grid frequency multiplier array, the low-loss quasioptical configuration is used for the construction of the multiplier circuit. The study of the effects of the light illumination on the C-V characteristics of varactor diode is important in understanding the potential applications of the quasi-optical varactor diode-grid frequency multiplier array circuit.     

Design consideration of monolithic millimeter-wave barrier varactor diode frequency multiplier arrays

A new device structure for highly efficient frequency tripling in the millimeter and submillimeter wavelength regions is presented. The Barrier-Intrinsic-N⁺ (BIN) diode structure [1,2] is modified for highly efficient millimeter- and submillimeter-wave frequency tripling device to be employed into the monolithic back-to-back diode frequency tripler array. The modified BIN diode structures have series resistances of a few ohms and cut-off frequencies in the terahertz range. The modified BIN diode structures have weaker C-V nonlinearities than the BIN diode structure does, however, the modified BIN structures have much higher intrinsic cut-off frequencies than does the BIN counterpart. The C-V nonlinearity, capacitance ratio, breakdown voltage, series resistance and cut-off frequency of this new device structure will be discussed in this paper. In addition, the calculated high-frequency performance of this device using a large-signal nonlinear circuit model will be presented in this paper. The operation and performance of the monolithic diode-grid frequency tripler arrays employing large numbers of the modified BIN diodes will also be discussed in this paper.     

Understanding Soliton Wave Propagation in Nonlinear Transmission Lines for Millimeter Wave Multiplication

In this paper, soliton propagation in nonlinear transmission lines (NLTLs) periodically loaded with symmetric voltage dependent capacitances is studied. From the lumped element equivalent circuit of the line we have analyzed the influence of nonlinear shunt reactances on soliton propagation characteristics. It is shown that by increasing the non linearity of the C–V characteristic, a faster separation of input signal into solitons is achieved. The fact that frequency multiplication in NLTLs is governed by soliton formation makes the results of this work relevant to understand the influence of nonlinear loading devices on multiplier performance. Since a heterostructure barrier varactor (HBV)-like voltage dependent capacitance has been considered for the nonlinear devices, this study can be of interest for the design of millimeter wave frequency multipliers loaded with HBVs.     

Scattering Characteristics of Dielectric Periodic Structure Composed of Left-handed Materials with Arbitrary Oblique Incidence

Scattering characteristics of monolayer and multilayer dielectric periodic structure composed of left-handed materials (LH-DPS) with plane wave arbitrary oblique incidence are carefully analyzed using a method which combines multimode network theory with the rigorous mode matching method. Our analysis results reveal that the arbitrary oblique incident angles and relative position between different LH-DPS have great effects to the scattering characteristics of LH-DPS which different from the situation of dielectric periodic structure composed of right-handed materials (RH-DPS). The reasons why the reflection characteristics of the LH-DPS are totally different from those of the RH-DPS with arbitrary oblique incidence are also given. The present quantitive investigation provides guidelines for the design of the monolayer and multilayer dielectric frequency selective surfaces for millimeter wave applications.     

欠匹配型磁绝缘感应电压叠加器次级阻抗优化方法

磁绝缘感应电压叠加器(MIVA)次级阻抗对脉冲功率驱动源和负载之间的功率耦合具有重要影响.基于稳态磁绝缘Creedon层流理论和鞘层电子流再俘获(re-trapping)理论,建立了负载欠匹配型MIVA电路分析方法,数值分析获得了MIVA输出参数(输出电压、阴/阳极电流和电功率)随负载欠匹配程度的变化规律.考虑阴极传导电流作为闪光X射线照相二极管的有效电流,建立了以MIVA末端X射线剂量率最大为目标的次级阻抗优化方法.获得了欠匹配型MIVA次级优化阻抗Z_(op)~*的变化规律:随着X射线剂量率对电压依赖程度提高,欠匹配型MIVA次级优化阻抗Z_(op)~*呈指数降低;负载阻抗越大,Z_(op)~*越大.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part I: Doubler

The efficiency of millimeter wave doublers with a wide tunable bandwidth was studied. The efficiency depends on the varactor parameters and the embedding impedances seen by the diode at fundamental and harmonic frequencies. Millimeter wave doublers were simulated with a nonlinear analysis program to find optimum embedding impedances for a given diode. Also the sensitivity of the efficiency to various diode and circuit parameters was evaluated. A scaled model was constructed in order to experimentally optimize the impedances. For experimental verification a doubler from 40–58 GHz to 80–116 GHz was constructed. The highest efficiency measured was 45% at 94 GHz with 5 mW input power. The highest efficiency obtained with 20 mW input power was 38%.     

Characterization of two coupled radial line transformers in dual-diode millimeter wave oscillators

Two mutually coupled radial line transformers mounted in a common rectangular waveguide of dual—diode millimeter wave oscillator are characterized by a hybrid technique based on Galerkin's method combined with collocation technique. The external circuit impedances looking outside from each of two active devices are calculated. A large number of numerical results of the external circuit impedances as a function of the structural parameters have been obtained. Some original conclusions have been made, which are helpful to the design and the adjustment of the dual—diode oscillators.     

Investigations on optically controlled millimeter wave Gunn oscillators

There is a growing interest in optically controlled millimeter wave oscillators. In this paper, we have investigated the external-circuit impedances of an optically controlled millimeter wave subharmonic Gunn diode oscillator, which is illuminated by GaAs/GaAlAs laser beam. The variation of the external-circuit impedances looking outward from the Gunn diode with respect to the optical injection plasma density are calculated based on a field analysis method. The results give some useful conclusions for optically controlled millimeter wave Gunn diode oscillator design. Experimentally an optical tuning frequency shift of 7MHz is achieved at W-band.     

Three-port electrical and optical model for LiTaO3 electro-optic probe with CPW test structure

A three-port electrical and optical model of LiTaO₃ probes with a high-bandwidth coplanar waveguide (CPW) test structure is developed in this paper. The three-port model is constructed by combining the full wave field simulation and the neural network techniques. The three-port model has the same accuracy as the full wave modeling, but its characteristics are directly obtained from the neural network weighting parameters rather than the complicated full wave simulation. With this model, both invasiveness and waveform distortion in the external E-O sampling can be de-embedded.     

Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

In this paper, a planar Schottky varistor diode is studied and modeled by equivalent circuit method and three dimensional full wave electromagnetic (3D-EM) method, respectively. The diode's equivalent circuit is extracted from millimeter-wave small-signal S-parameter measurements. Since the package of the diode influences the electromagnetic field distribution at millimeter and sub-millimeter wavelengths, a 3D-EM model and an improved equivalent circuit model is applied to describe the field precisely. The simulated results of equivalent circuit, improved equivalent circuit and 3D-EM model are compared with the measured results. In addition, the effects caused by silver paste conductive adhesive are considered in 3D-EM model and improved equivalent circuit model. The results show that both the 3D-EM model and improved equivalent circuit model have good S-parameter consistency with measured results.     

Tunable I-shaped metamaterial by loading varactor diode for reconfigurable antenna

A tunable metamaterial by employing I-shaped metamaterial with loaded varactor diode is presented in this paper and the phase of emitting wave modulated by the varactor diode is demonstrated. We have proved that the energy loss is relatively low when the working frequency is chosen to be away from the resonance frequency of the I-shaped metamaterial. By using the metamaterial, a pattern reconfigurable antenna is designed based on arrayed antennas theory. Simulations results show that the radiation pattern can be tuned to different angles by properly arranging the linear phase difference of adjacent regions.     

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

The left-handed nonlinear transmission line(LH-NLTL) based on monolithic microwave integrated circuit(MMIC) technology possesses significant advantages such as wide frequency band,high operating frequency,high conversion efficiency,and applications in millimeter and submillimeter wave frequency multiplier.The planar Schottky varactor diode(PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component.The design and the fabrication of the diode for such an application are presented.An accurate large-signal model of the diode is proposed.A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time.The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz,and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm.The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.     

Full wave analysis of non-radiative dielectric waveguide modulator for the determination of electrical equivalent circuit

This paper reports the determination of electrical equivalent circuit of ON/OFF modulator in non-radiative dielectric (NRD) guide configurations at Ka-band. Schottky barrier mixer diode is used to realize this modulator and its characteristics are determined experimentally using vector network analyzer. Full wave FEM simulator HFSS is used to determine an equivalent circuit for the mounted diode and modulator in ON and OFF states. This equivalent circuit is used to qualitatively explain the experimental characteristics of modulator.      

Design of a varactor-tunable metamaterial absorber

In this paper, we design a varactor-tunable metamaterial absorber （MA）. The tunable MA is based on a mushroom-type high impedance surface （HIS）, in which varactors are loaded between adjacent metal patches to adjust the capacitance and tune the resonance frequency, the primary ground plane is etched as the bias network to bias all of the varactors in parallel, and another ultra-thin grounded film is attached to the bottom. Its absorption characteristics are realized for electrically dielectric loss. The simulated values of a sample indicate that a tunable frequency range from 2.85 GHz to 2.22 GHz is achieved by adjusting the varactor capacitance from 0.1 pF to 2.0 pF, and better than 0.97 absorbance is realized; in addition, the tunable frequency range is expanded from 4.12 GHz to 1.70 GHz after optimization.     

DIELECTRIC EFFECT ON THE RADIO-FREQUENCY CHARACTERISTICS OF A RECTANGULAR WAVEGUIDE GRATING TRAVELING WAVE TUBE

A new type of partial-dielectric-loaded rectangular waveguide grating slow-wave structure (SWS) for millimeter wave traveling wave tube (TWT) is presented in this paper. The radio-frequency characteristics including the dispersion properties, the longitudinal electric field distribution and the beam-wave coupling impedance of this structure are analyzed. The results show that the dispersion of the rectangular waveguide grating circuit is weakened, the phase velocity is reduced and the position of the maximum E _z is basically invariant after partially filling the dielectric materials in the rectangular waveguide grating SWS. Although the coupling impedance decreases a little, it still keeps above 40 Ω.     

驱动X光二极管的级联Blumlein型脉冲网络过电压脉冲分析

为了提高装置容许的运行电压以提高辐射剂量产额,开展了放电过程中影响脉冲形成网络过电压幅值因素的研究。在引入开关导通不同步性和导通电阻条件下,建立了适用于任意电阻性负载的级联Blumlein型脉冲形成网络电压波过程理论模型,基于波过程模型进一步分析了影响脉冲形成网络过电压幅值的因素。研究表明开关不同步是产生过电压的主要因素,过电压峰值出现在开关闭合后的3倍形成网络电长度时刻。随着网络级联级数的增加,二极管阻抗与源阻抗匹配情况下最大过电压可达到-2倍充电电压,而二极管阻抗下降使得过电压幅值得以加强,阻抗过早崩溃可使过电压幅值接近充电电压的-3倍。     

GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光管材料制备及表征

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。同时利用X射线双晶衍射,变温(10～300K)光致发光(PL)等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰,谱峰范围跨跃800～880nm,双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时,器件输出光谱的半峰全宽可以达到26nm,室温下连续输出功率达到6mW。