Exploring the electronic band structure of individual carbon nanotubes under 60 T

Nano-sciences, and in particular nano-physics, constitute a fascinating world of investigations where the experimental challenges are to synthesize, to address (for instance optically or electrically) to explore and promote the remarkable physical properties of new nano-materials. Somehow, one of the most promising realization of nano-sciences lies in carbon-based nano-materials with sp² covalent bonds. In particular, carbon nanotubes, graphene and more recently ultra-narrow graphene nano-ribbons are envisioned as elementary bricks of the future of nano-electronics. However, prior to such an achievement, the first steps consist in understanding their fundamental electronic properties when they constitute the drain–source channel of a gated device or inter-connexion elements. In this article, we present the richness of challenging experiments combining single-object measurements with an extreme magnetic environment. We demonstrate that an applied magnetic field (B), along with a control of the electrostatic doping, drastically modifies the electronic band structure of a carbon nanotube based transistor. Several examples will be addressed in this presentation. When B is applied parallel to the tube axis, a quantum flux threading the tube induces a giant Aharonov–Bohm conductance modulation mediated by Schottky barriers whose profile is magnetic field dependent. In the perpendicular configuration, the applied magnetic field breaks the revolution symmetry along the circumference and non-conventional Landau states develop in the high field regime. By playing with a carbon nanotube based electronic Fabry–Perot resonator, the field dependence of the resonant states of the cavity reveals the onset of the first Landau state at zero energy. These experiments enlighten the outstanding efficiency of magneto-conductance experiments to probe the electronic properties of carbon based nano-materials. To cite this article: S. Nanot et al., C. R. Physique 10 (2009).     

Organisation of carbon nanotubes and semiconductor nanowires using lateral alumina templates

Carbon nanotubes and semiconductor nanowires have been thoroughly studied for the future replacement of silicon-based complementary metal oxide semiconductor (CMOS) devices and circuits. However, the organisation of these nanomaterials in dense transistor arrays, where each device is capable of delivering drive currents comparable with those of their silicon counterparts is still a big challenge. Here, we present a novel approach to the organisation of carbon nanotubes and semiconductor nanowires, based on the use of porous lateral alumina templates obtained by the controlled anodic oxidation of aluminium thin films. We discuss the growth of nanomaterials inside the pores of such templates and show the feasibility of our approach. Our first results point to further work on controlling the synthesis of catalyst nanoparticles at the bottom of the pores, these particles being necessary to nucleate and sustain the growth of carbon nanotubes or semiconductor nanowires. To cite this article: D. Pribat et al., C. R. Physique 10 (2009).     

Multiscale simulation of carbon nanotube devices

In recent years, the understanding and accurate simulation of carbon nanotube-based devices has become very challenging. Conventional simulation tools of microelectronics are necessary to envision the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, as well as nanotube doping or functionalization, demand for more accurate quantum approaches. In this article, we review our recent progress on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semi-classical Monte Carlo and quantum transport approaches. To cite this article: C. Adessi et al., C. R. Physique 10 (2009).     

Carbon nanotube chemistry and assembly for electronic devices

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).     

Charge transport in carbon nanotubes based materials: a Kubo–Greenwood computational approach

In this contribution, we present a numerical study of quantum transport in carbon nanotubes based materials. After a brief presentation of the computational approach used to investigate the transport coefficient (Kubo method), the scaling properties of quantum conductance in ballistic regime as well as in the diffusive regimes are illustrated. The impact of elastic (impurities) and dynamical disorders (phonon vibrations) are analyzed separately, with the extraction of main transport length scales (mean free path and localization length), as well as the temperature dependence of the nanotube resistance. The results are found in very good agreement with both analytical results and experimental data, demonstrating the predictability efficiency of our computational strategy. To cite this article: H. Ishii et al., C. R. Physique 10 (2009).