双层荧光粉涂覆对COB封装LED出光的影响

为了提高LED出光量,基于传统的荧光粉涂覆设计了一种双层荧光粉涂覆结构。通过对上下涂覆层浓度及上层涂覆量的研究,探究双层涂覆结构对COB封装LED出光的影响。结果表明在通电电流为440 mA时,可在实验中实现15 W的COB封装结构的白光LED:涂覆单一黄色荧光粉,上下层胶粉比为14.2～28且上层涂覆体积为下层的0.8倍时,COB封装LED的光通量为2 179 lm,光效可达145.3 lm/W,显指为63,出光量最大提升为7.82%;荧光粉调整为黄绿粉和红粉的配合使用后,最终实现色温、光效及显指分别为4 854 K、129.7 lm/W和81.2。因此,双层荧光粉涂覆结构可以提高COB封装LED的光学性能,对实际生产有一定的应用价值。     

Protective sol-gel coating on silicate phosphor used in light emitting diodes

In this study, an orange-red silicate phosphor that is used in light emitting diodes (LEDs) was coated with a SiO₂ blocking layer via a sol-gel reaction of tetra-ethyl ortho-silicate (TEOS) to investigate its reliability as an encapsulant. A sol-gel coating protects the phosphor surface from moisture and reactive materials and improves the reliability of the phosphor. The efficacy of the phosphor coating following an 85 °C and 85 relative humidity (Rh)% test decreased by 7%, whereas an uncoated phosphor coating decreased by 35%. A SiO₂ sol-gel coating decreases the luminous efficiency by a small amount with each coating.     

TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响

利用热压法将TiO₂微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO₂的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO₂浓度为0.966 g/cm³ 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO₂的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温.     

COB光源的窄光束均匀照明设计

为了解决高功率白光LED光源输出高均匀度窄光束的问题,设计了一种由复合抛物面反射器、菲涅尔透镜和非球面透镜组成的照明系统。设计中以板上芯片型（COB）集成光源的配光曲线为依据构建光源仿真模型,由复合抛物面反射器实现大角度光线初次会聚之后,再由菲涅尔透镜控制溢散光,最后利用非球面透镜进行准直配光。采用TracePro进行蒙特卡洛光线追迹,根据仿真得到的系统性能指标,并研制出实物装置进行实验测试。最终测试结果表明:窄光束均匀照明系统可以输出±7.9°的光束,并且在距离系统出光面0.7 m左右的区域形成均匀度超过96%的圆形光斑,整体光效达到60%。     

Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor

Nanometer sized Ni-dot/Ag/Pt metal coating films with different Ni-dot sizes were incorporated in InGaN based blue light emitting diodes as p-type reflection metal to enhance the extraction efficiency of blue light. For the reflectivity change from 84% to 93.7%, the optical output power of blue light before phosphor coating and the luminous flux of white light after phosphor deposition have improved by 49.3% and 58.2% at 350 mA, respectively. For the presented white light devices, the blue and yellow luminescence respectively has been improved relatively up to 1.52 and 1.67 times. The improved extraction efficiency of yellow light from the phosphor integrated blue light emitting diode is thought to be attributed to the reduction of round trip loss of blue and yellow light inside the device due to the enhanced reflectivity of nanometer sized Ni/Ag/Pt p-type reflection metal.     

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.     

一次透镜封装的单片集成LED光源北大核心CSCD

在使用LED作为照明光源的过程中,光场作为LED应用中的关键因素,一般使用二次光学系统进行调控。但是二次光学系统一般设计复杂、体积大、重量重,随着LED光学封装系统朝着小型化方向发展,二次光学系统的应用将会变得困难。结合软件仿真和实验验证探索了用于单片集成发光二极管(MI-LED)的一次光学透镜的光场调控功能。研究结果表明,仿真和实验LED光源的光场几乎重合一致,所设计的一次透镜将LED光源的光束角从120°调控到48°~72°范围内。与未加一次透镜的LED光源相比,加一次透镜的LED光源具有更高的光提取效率和更均匀的空间光色分布。     

电子束管中的涂屏技术

在用PVA-发光粉泥浆技术涂制电视显象管的发光屏中PVA(AD)树脂的光反应是将发光粉粘结在底板上的关键环节。包有树脂的这些颗粒组成有最佳颗粒层数的发光屏(例如,1.4层)。在发光颗粒表面散射的紫外光只有当PVA-发光粉泥浆的pH值被调到7附近时才可能到达发光颗粒层的底面。在底板上被散射紫外光的强度决定于颗粒的光学不均匀性,而这个不规则性对球形颗粒是最大。紫外光的强度及其光程断面和高质量的发光粉是制备优良发光屏的保证。     

阵列式微型透镜封装多芯片COB LED的光学仿真设计及应用

为了提高COB LED的取光率,以1919 COB LED为研究对象,建立阵列式圆锥透镜、半椭球透镜、四棱锥透镜和半圆球透镜封装LED模型,并利用光学仿真软件进行研究。仿真实验结果表明:在优化条件下,高0.5 mm、直径0.9 mm的阵列圆锥透镜封装LED的光通量由平面封装的67 lm提高至84.3 lm,即取光率提高25.8%。制作了RGB芯片的多芯片LED样品,并用直径1 mm的阵列半圆球透镜进行封装,其取光率提高18.8%。     

GaInN light-emitting diodes with omnidirectional reflector using nanoporons SnO2 film

Enhancement of light extraction in a GaInN light-emitting diode(LED)employing an omni-directional reflector(ODR)consisting of GaN,SnO2 nanorod and an Ag layer was presented.The ODR comprises a transparent,quaxterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type were prepared by dip-coating technique.The average size of the spherical SnO2 particles obtained is 200 nm.The refractive index of the nanorod SnO2 film layer is 2.01.The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage.This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer.Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector(DBR).     

半导体激光激发荧光粉转换白光照明系统设计

单管蓝光半导体激光器功率相对较低,为了获得高功率激光,利用多单管光纤耦合技术实现10 W蓝光激光输出,输出的激光激发荧光粉片合成的白光光源作为汽车远光灯光源。根据汽车照明法规要求设计了汽车远光灯照明系统并详述了抛物面反光罩、双凹透镜和荧光粉片的光学结构及对反光罩曲线参数、双凹透镜和荧光粉片的放置位置对光源色温均匀性及照度的影响。模拟设计了顶端19 mm×31.6 mm椭圆形开孔、底部直径5 mm圆形开孔、高60 mm的椭圆抛物面反光罩,荧光粉片置于距反光罩底部15 mm处时,在距光源25 m处的接收面上得到了5 m×12 m的椭圆光斑,白光光源的光通量为1 025 lm,中心色温为5 880 K,中心色坐标为(x=0.322 6,y=0.369 2),该汽车远光灯照明系统满足汽车照明法规要求。     

Enhanced light extraction with silicon nanoantenna arrays for white light LED applications

High conversion efficiency and quantum efficiency is essential for the phosphor in an efficient phosphor-based white light LEDs. Here, based on the coherent harmonic and the random independent emitter model, we demonstrate theoretically that the silicon nanoantenna array can dramatically enhance the output power of emitters in a phosphor layer by investigating the far-field radiation enhancement of an electric dipole assisted by silicon nanopillars in a waveguide structure. Compared with the plasmonic silver nanoantenna array, the silicon nanoantenna array can increase the enhancement factor of light extraction efficiency (LEE) over 50% for the dipole source at the wavelength of 620 nm, thus showing potential applications in white light LEDs. The enhanced LEE is ascribed to the low-loss directional light scattering of silicon nanoantennas and the strong guided mode resonances caused by their array. The calculation results also indicate that the far-field radiation can be tailored significantly by changing the aspect ratio of silicon nanopillars while presenting a good directivity. Our research is expected to give more insights into the design and optimization of the solid-state lighting, gaining and lasing systems by integrating silicon-based nanoantennas.     

单分散球形CaWO_4∶Re~(3+)(Sm~(3+),Eu~(3+))红色荧光粉的制备及其发光性能

目前使用的白光LEDs荧光粉,主要是适于蓝光GaN芯片激发的黄、绿、红色稀土荧光粉。黄、绿光荧光粉技术已经相对完善,而发光良好、性能稳定的红色荧光粉比较少。因此,需要开发新型的蓝光激发型红色荧光粉。相对于传统的高温固相法制备荧光粉体,本文利用水热法在较低温度160℃成功制备出了发光性能良好的单分散球形钨酸钙红色发光材料CaWO4∶Sm~(3+)和CaWO_4∶Eu~(3+)。通过X射线粉末衍射仪(XRD)、场发射扫描电镜(FE-SEM)、荧光光谱仪(PL)等表征手段,研究了所制备材料的晶体结构、表面形貌以及光学特性。讨论掺杂稀土离子浓度、反应时间等条件的改变对样品形貌以及发光性能的影响。结果显示,掺杂浓度不仅影响材料的形貌,还影响其发光强度。当Sm~(3+)和Eu~(3+)掺杂量分别为6%和4%时,CaWO_4∶Sm~(3+)和CaWO_4∶Eu~(3+)材料的发光性能最优。研究结果表明,Sm~(3+)和Eu~(3+)掺杂的CaWO_4材料可以作为荧光灯和蓝光芯片LED用荧光粉的备选材料。     

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO_2 on Al-doped ZnO transparent conductive layer

We report an effective enhancement in light extraction of Ga N-based light-emitting diodes(LEDs) with an Al-doped Zn O(AZO) transparent conductive layer by incorporating a top regular textured SiO_2 layer. The 2 inch transparent throughpore anodic aluminum oxide(AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO_2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.     

Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement

In this study, we demonstrated a simple method that can be used to simultaneously modulate the far field pattern and enhance the light extraction of GaN-based light-emitting diodes (LEDs). In this method, microstructures were imprinted on a reliable spin-on-glass surface on top of a transparent conductive layer. The far-field pattern was modulated using microoptical structures, and at the same time, the light extraction was enhanced owing to the small refractive index difference and surface roughness. There was no decrease in the electrical performance of these devices. The peak intensity shifted from 0 to 22° in one-dimensional (1D) asymmetrically blazed periodic structures, and a flattened distribution with a uniform intensity within a span of 110° was observed in two-dimensional (2D) symmetrically periodic structures. This method achieved 13 and 40% light enhancements for 1D and 2D structures, respectively.     

Ce3+:YAG doped glass-ceramics for white light-emitting diode

New types of phosphor (YAG:Ce³⁺: yttrium-aluminum garnet doped with Ce³⁺ ions) containing glass-ceramics material was developed for light-emitting diodes (LEDs). The optical properties of the experimental samples were investigated and are reported on. Use of new phosphor material in white LEDs fabricated with the “chip-on-board” technology is demonstrated.     

New composite material based on polycarbonate and long-persistent phosphor

Spectral-energy and inertial properties of very long-persistent (> 10 h) phosphor SrAl₂O₄:Eu²⁺, Dy³⁺ were studied using semiconductor light-emitting diodes and other optical radiation sources in the blue and near-ultraviolet regions. The light store accumulated in this phosphor (up to 1 · 10¹⁶ photon/cm²) was estimated and its luminescence kinetics was discussed. The prospects of its application, including phosphor grain introduction into films, were considered.     

白光LED荧光粉涂敷工艺及光学性质

在20mA电流下,对自行设计的白光LED进行测试,发现荧光粉远离芯片封装方法与传统封装方法相比,流明效率提高了20.3%。效率的提高主要是因为减小了LED芯片对荧光粉散射的吸收。同时测得随着正向电流的增加,色坐标x,y的值逐渐减小,色温升高,而光通量呈非线性增加,流明效率逐渐下降。     

Surface channeling of swift light ions

A fast computer code is developed to provide information about the trajectories of swift light particles incident on crystalline targets under surface channeling conditions. The approximations used in the model are tested by comparison of trajectory calculations with the MARLOWE simulation program. The simulation of experimental energy distributions allows discussing various inelastic energy loss models for the interaction of 150 keV protons with a nickel surface. The results suggest that plasmon excitations are not sufficient to account for the measured energy losses. It is found that the Oen-Robinson formula, including inelastic energy losses by single electron excitations in dense materials reasonably well applies to the reflection of light ions from metallic surfaces in channeling conditions. The measured light intensity emitted from 200 keV He⁺ reflected ions in various directions close to compact atomic surface rows is compared with the calculated reflection coefficient. The results suggest that most of the particles reflected in ionic state do not penetrate the target surface. Detailed comparison between light emission measurements and calculated reflection intensities, however, requires accurate modelling of the surface topography as well as of the deexcitation mechanisms involved in the surface reflection of light ions.     

Effect of phosphor settling on the optical performance of phosphor-converted white light-emitting diode

Phosphor settling phenomena exists during the phosphor coating process in the light emitting diode (LED) packaging industry. It is perceived that phosphor settling will affect the concentration of the phosphor, and consequently the concentration will influence the optical performance of phosphor-converted white LED light source. In this paper, an experiment based on the real packaging process was conducted to investigate the phosphor settling phenomena. It was found that the concentration variation of the phosphor embedded in the silicone matrix was very small (less than 1%). Based on the observation of the experiments, the effect of the phosphor settling in the silicone matrix on light extraction efficiency (LEE), correlated color temperature (CCT), angular color uniformity (ACU) and light intensity distribution curve (LIDC) was investigated and discussed by the three dimensional Monte Carlo ray-tracing simulations. It was discovered that the effect of the phosphor settling on the optical performance could be neglected when using the present packaging process.