Optical design and optimization of light emitting diode automotive head light with digital micromirror device light emitting diode

This research proposes a new method for light emitting diode automotive headlight design with digital micromirror device (DMD). The optical design is advanced because of the following features. First, this optical design controls the angle of light pattern without light masking so as to achieve much higher light efficiency compared with traditional optical design for headlight systems. Second, in view of the tendency that the advanced light emitting diode automobile headlight is designed to be a low beam light module and a high beam light still needs an auxiliary lighting system, the optical system designed in this research, mainly adopting DMD module as high/low beam light switch, can switch on and off both the high and low beam lights. Because DMDs function of accepting a bidimensional image, high/low beam light patterns can be determined by DMD. Third, a light pattern will be created and compensated simultaneously by DMD, which might replace mechanical adaptive front-lighting system in the future because DMD takes advantage of fast response and simultaneous compensation. Fourth, a design using a multiple reflection curved mirror is employed in this research to adjust light energy distribution; therefore, the articulation of the light pattern can be enhanced. For this method, experimental results of light efficiency are up to 85%, which is superior to current products in the market.     

Design of optical components for a light emitting diode zoom illumination system

In this article, we report an optical design for a light emitting diode that can achieve high illumination quality using two hyperbolic reflectors. The relative movements of the reflectors and the light source produce a zoom function that can change the illumination beam from convergence to divergence. This study uses optical software ZEMAX for system simulation, and optimization was performed to select reflector parameters with the objectives of both improving floodlight uniformity and spotlight efficiency. Finally, experiments were conducted to verify the validity of the design, and the results corresponded well to the zoom illumination simulations.     

A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated.     

新型全方位反射铝镓铟磷薄膜发光二极管

提出了一种新型全方位反射铝镓铟磷(AlGaInP)薄膜发光二极管(LED)的结构和制作工艺，在这个结构里应用了低折射率的介质和高反射率的金属联合作为反光镜.用金锡合金(80Au20Sn，重量比)作为焊料把带有反光镜的AlGaInP LED外延片倒装键合到GaAs基板上(RS-LED)，去掉外延片GaAs衬底，把被GaAS衬底吸收的光反射出去.通过与常规AlGaInP 吸收衬底LEDs(AS-LED)和带有DBR的AlGaInP 吸收衬底LEDs(AS-LED(DBR))电、光特性的比较，证明新型全方位反射AlGaInP薄膜LED结构能极大提高亮度和效率.正向电流20mA时，RS-LED的光输出功率和流明效率分别是AS-LED的3.2倍和2.2倍，是AS-LED(DBR)的2倍和1.5倍.RS-LED(20mA下峰值波长627nm)的轴向光强达到194.3mcd，是AS-LED(20mA下峰值波长624nm)轴向光强的2.8倍，是AS-LED(DBR)(20mA下峰值波长623nm)轴向光强的1.6倍. 关键词： 铝镓铟磷 薄膜发光管 全方位反射镜 发光强度     

基于量子点和MEH-PPV的白光发光二极管的研究

利用无机纳米材料与有机聚合物材料相结合的方法制备白光发光二极管器件, 研究了蓝光量子点QDs(B)掺杂聚[2-甲氧基-5-(2-乙基己氧基-1, 4-苯撑乙烯撑](MEH-PPV) 复合体系的发光特性及量子点QDs(B) 掺杂浓度(质量分数)不同对器件发光特性的影响. 制备了ITO/PEDOT:PSS/MEH-PPV:QDs(B)/LiF/Al 结构的电致发光器件, 测试了器件的电致发光光谱和电学、光学特性. 当QDs掺杂浓度为40%, 驱动电压为8 V时器件能得到较为理想的白光发射. 同时, 对比研究了非掺杂体系的发光特性, 制备了结构为ITO/PEDOT:PSS/MEH-PPV/QDs(B)/LiF/Al的器件, 掺杂体系相较于非掺杂体系, 器件的最大亮度增大, 启亮电压降低, 并分析了掺杂体系器件性能改善的原因.     

Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

Abstract

Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.     

p型GaN低温粗化提高发光二极管特性

利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%.     

Enhanced luminance efficiency of polymer light emitting diode by blending with ionic solid electrolytes

In this letter, we demonstrate that luminance efficiency of polymer light emitting diode can be significantly enhanced by adding a small amount of ionic solid electrolytes. Heterojunction polymer device, consist of MEH-PPV, C₆₀, methanofullerene([6,6}-phenyl C61-butyric acid methyl ester) PCBM and/or PEO as the active materials. It has been found that blending of ionic solid electrolytes, such as polyethylene oxide into active layer, enhances the luminance efficiency of polymer device. It is believed that the optimized polymer morphology improves carrier mobility of MEH-PPV. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

GaN基高压直流发光二极管制备及其性能分析

GaN基高压直流发光二极管工艺制备, 采用蓝宝石图形衬底(PSS) 外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件, 该结构器件发光效率最高, 封装白光后, 在色温4500 K, 驱动电流20 mA时, 光效116.06 lm/W, 对应电压50 V. 测试其I-V曲线表明, 开启电压为36 V, 对应驱动电流为1.5 mA; 在电流15 mA至50 mA时, 光功率随驱动电流增加近似于线性增加, 在此区域光效随电流增加而降低的幅度比较缓慢, 表明GaN基高压直流LED适宜于采用大电流密度驱动, 而不会出现驱动电流密度增加导致量子效率明显下降(efficiency droop), 为从芯片层面研究解决量子效率下降难题提供了一种新思路.     

基于缺陷光子晶体结构的GaN基发光二极管光提取效率的有关研究

现有的研究表明,利用光子晶体可以有效提高发光二极管的光提取效率.由于在制造时光子晶体中可能会存在缺陷和错位,本文基于时域有限差分法对光子晶体中的缺陷和错位对发光二极管发光效率的影响进行了研究.数值仿真结果表明,光子晶体中少量缺陷或者微小错位并不会降低发光二极管的光提取效率,其中某些缺陷反而能增强光子晶体发光二极管的光提取效率.本文对其物理机理给出了详细的理论分析,并设计了一种具有缺陷的光于晶体,在未刻蚀到有源层(离有源层20 nm)的情况下,其光提取效率达到了完美光子晶体的1.6倍.通过对这种缺陷光子晶体的空间频谱分析可知,可以通过设计具有特殊空间频谱分布的光子晶体来提高发光二极管的发光效率,这对设计高光提取效率的光子晶体结构和制造高效率的发光二极管有指导意义.     

基于电容和电导特性分析GaN蓝光发光二极管老化机理

采用正向交流小信号方法测试和分析老化前后GaN发光二极管（LED）的电容-电压特性,结合串联电阻、理想因子、隧穿电流参数讨论负电容以及电导变化情况.基于L-V曲线定性分析老化前后负电容的阈值电压,老化之后样管的受主浓度降低,辐射复合概率下降,大量缺陷以及非辐射复合中心出现,对载流子俘获作用增强,造成负电容降低.反向偏压以及小正向偏压下,隧穿效应导致老化之后样管的电导增大;正向偏压大于2.2 V区域,考虑串联电阻效应,老化后样管电导减小.在分析LED电容-电压、光输出、电学特性曲线与老化机理基础上,通过实验论证以及理论解释表明,负电容以及电导特性可作为分析LED老化特性的参考依据. 关键词： GaN发光二极管 负电容 电导 老化机理     

磁场对基于Co铁磁薄膜的有机发光器件效率和电流的影响

制备结构为ITO/Co/NPB/Alq₃/LiF/Al的有机发光器件,测量了室温下磁场对器件发光效率和电流的影响.发现磁场强度小于80 mT时,器件发光效率随磁场强度的增加而增大,最大为18.8%,随磁场强度的继续增加发光效率的增强趋于饱和.效率的增加是Co的自旋极化的注入和磁场效应共同作用的结果,其中自旋极化注入起主要作用.在磁场强度小于60 mT时电流随磁场增强而增加,最大为6.9%,随磁场强度的进一步增加电流的增加有所减弱.产生这种现象的原因可归结为磁场相关的单线态极化子对的解 关键词： 有机电致发光 自旋极化 磁场效应     

Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC_x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC_x as well as inserting wide-gap intrinsic a-SiC_x at the p-type SiC_x/Alq interface are effective for improving device performance.     

The luminescence properties of Er-doped and Er-Tm-co-doped phosphate glasses for white light emitting diode

Phosphate glasses and glass ceramics doped with Er³⁺ and co-doped with Er³⁺-Tm³⁺ are presented in this work. The luminescence properties have been characterized by absorption, excitation and emission spectra. All samples excited by blue light could emit a combination of blue/green/orange/red wavelength giving white light. For Er³⁺-doped glasses, a self-quenching effect has been obtained and an adjustable tune comes out after crystallization. For co-doped glasses, the red emission at 651 nm has been enhanced due to the existence of Tm³⁺, which could be relative to both the overlapped emissions and the energy transfer from Tm³⁺ to Er³⁺.     

An optical and electrical relaxation oscillator using a Si homojunction structured light emitting diode

We propose an optical and electrical relaxation oscillator making use of an S-shaped negative resistance characteristic of a recently developed light-emitting diode using a bulk silicon crystal homojunction. From simulations, we found that the voltage and optical power oscillated synchronously, and their oscillation frequency increased with increasing injection current. The synchronous oscillation was also confirmed by experimental measurements. The amplitude of the voltage was 50?V_p-p, the amplitude of the optical power was 3?mW_p-p, and the maximum oscillation frequency was 34?kHz. The measured value of the spontaneous emission lifetime of a Si wafer was 900?ps, which was as short as that of direct transition-type semiconductors.     

Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM

We present a light emitting diode with a two-dimensional photonic crystal structure prepared by interference lithography at the light emitting diode surface. The emission maximum is at 850 nm. The two-dimensional photonic crystal structure enhanced the light extraction efficiency by a factor of 1.39. The photonic crystal light emitting diode surface morphology was analyzed by atomic force microscopy. The enhanced extraction efficiency of the photonic crystal diode was documented from L(I) dependencies and was confirmed by near-field studies.     

Multi-objective design and extended optimization for developing a miniature light emitting diode pocket-sized projection display

This research proposes a new extended optimization method for a miniature light emitting diode (LED) pocket-sized projection display, introducing integration of the Taguchi method and principal component analysis in order to optimize the multiple quality characteristics of an LED pocket-sized projection display. With the aid of interactive optimization, control factors with three different levels are carefully selected in the complicated preliminary experiments. A set of optimal design parameters is well selected for best results on the combined effects of the total luminous flux, illumination uniformity, and the packing size of the system. The selected control factors are inclusive of major lens and system specifications, such as lens overall length, X-CUB semi-aperture, length of light integrator, width of integrator, total internal reflection (TIR) prism entering semi-diameter for the TIR prism, air-gap of the TIR prism, and digital micromirror device (DMD) position; an L18 orthogonal array is applied and implemented in the experiments. According to experimental results, the optimal design parameters for the projection display can be determined as A1 (lens specifications: type I), B3 (lens length: overall length), C1 (X-CUB semi-aperture: 8 mm), D3 (integrator length: 36.6 mm), E2 (integrator width: 3.5 mm), F2 (TIR prism entering semi-diameter: 11 mm), G1 (TIR prism air-gap: 1.0024 mm), and H1 (DMD location: −0:5 mm). In addition, analysis of variance (ANOVA) is also employed to identify the factor A (lens specifications), factor D (integrator length), factor F (TIR prism entering semi-diameter), and factor G (TIR prism air-gap) as key parameters, which account for 71.82% of the total variance. The other factors when compared are found to have relatively weaker impacts on the process design. Furthermore, a confirmation experiment of the optimal design parameters shows that the aforesaid multiple performance characteristics are optimized to achieve the best levels. It is concluded that Taguchi method and principal component analysis (PCA) combine to optimize and then minimize the LED pocket-sized projection display system, which not only yields a sufficient understanding of the effects of control factors, but also produces an optimized design to ensure that the LED pocket-sized projection display system exhibits the best multiple performance characteristics.     

发光二极管用红色荧光粉SrMoO4:Eu3+的制备和发射性质

采用化学共沉淀法制备了适合于紫外、近紫外、蓝光发光二极管(LED)激发的红色荧光粉SrMoO4:Eu3+.研究了样品的晶体结构和发光性质.结果表明:化学共沉淀法合成的SrMoO4:Eu3+荧光粉为四方纯相,其激发光谱包括一个宽带峰和一系列尖峰,峰值位于280nm(宽带峰中心),395nm,465nm,可以被紫外LED和蓝光LED有效激发.在395nm的激发下,测得发射光谱的强发射峰位于613nm,对应Eu3+离子的5D0→7F2跃迁.Eu3+离子掺杂浓度的改变对基质的晶格常数、Eu3+离子在晶体中对称性及发光性能有较大影响.通过对比不同掺杂浓度Eu3+离子的发射谱,发现在SrMoO4基质中Eu3+离子掺杂存在浓度猝灭现象,其最佳掺杂浓度为15%.     

Research on photoelectronics properties of array emitting diode and its light energy distribution in detection screen

According to the principle of multi-screen intersection target measure flying projectile parameters, the photoelectronics properties of array emitting diode that form detection screen in multi-screen intersection target and its light energy distributing were studied. The form of detection screen using array emitting diode and the measure principle of four screens intersection were analyzed. The properties of emitting diode were analyzed based on its compound emitting mechanism and P–N ties internal current carrier. The light energy superposition principle was applied to set up light energy distributing model and give out its arithmetic. Through calculation and analysis, the light energy distributing is asymmetric when being close to diode position and the output variation range of light energy is large relatively. When test position is far from diode, the light energy distributing is uniformity, but the energy is relatively feebleness in edge of screen. Detection screen light energy distribution is trapezoidal in whole screen. The variety of emitting diode luminous flux is very distinct when projectile close to pointing light source, the output signal in received detective circuit is very high which is propitious to improve acquirement rate.     

Design details and characterization of all digital closed-loop interferometric fiber optic gyroscope with superluminescent light emitting diode

This paper describes the design details and the characterization of an all digital closed-loop (ADCL) interferometric fiber optic gyroscope (IFOG) Prototype with sine wave biasing modulation and SLED emiting at 1288.9 nm, constructed in TUBITAK UME. Electronic feedback section of ADCL-IFOG is composed of 16 bit AD7714YN ADC, 14 bit-LTC1667CG DAC, fully controlled and synchronized by 89C51 microcontroller. The averaged sensitivity of the ADCL-IFOG prototype in unit of error voltage applied to the phase modulator was calculated as 132.65 μV/(°/h) which equals to a scale factor of 7.53888 (°/h)/mV with a standard deviation of 0.85% for a range of 1–15270 (°/h) rotation rate, corresponding to a range of Sagnac phase shifts varying from 0.00115 to 17.57448 (°). The maximum peak to peak noise and the bias stability of the prototype were determined as 4.97 and 1.48 (°/h) at 23.0°C, respectively. The variation of the noise and bias stability on a temperature range of 23.0–42.0°C was observed.