Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.     

Ultrathin film deposition by liquid CO2 free meniscus coating-uniformity and morphology

Ultrathin organic films of sucrose octaacetate (SOA) were deposited on 12.5 cm diameter silicon wafer substrates using high-pressure free meniscus coating (hFMC) with liquid CO2 (l-CO2) as a coating solvent. The dry film thickness across the wafer and the morphology of deposited films were characterized as a function of coating conditions-withdrawal velocity, solution concentration, and evaporation driving force (deltaP). When no evaporation driving force was applied (deltaP = 0), highly uniform films were deposited with thickness in the range of 8-105 angstroms over the entire concentration range (3-11 wt%). Uniform films were also obtained at low concentrations (3-5 wt%) with a low evaporation driving force (deltaP = 0.0138 MPa). However, films deposited at medium to high concentrations (7-11 wt%) were thicker (110-570 angstroms) and less uniform, with larger nonuniformities at higher applied evaporation driving forces. Optical microscopy and atomic force microscopy (AFM) were used to characterize film morphology including drying defects and film roughness. Films deposited without evaporation had no apparent drying defects and very low root-mean-square (RMS) roughness (1.4-3.8 angstroms). Spinodal-like dewetting morphologies including holes with diameters in the range of 100-300 nm, and surface undulations were observed in films deposited at medium concentration (7 wt%) and low deltaP (0.0138-0.0276 MPa). At higher concentrations and higher evaporative driving forces, spinodal-like dewetting morphologies disappeared but concentric ring defect structures were observed with diameters in the range 20-125 microm. The film thickness and morphology of SOA films deposited from 1-CO2 hFMC were compared to those deposited from toluene and acetone under normal dip coating. Films deposited from l-CO2 hFMC were much thinner, more uniform, and exhibited much fewer drying defects and lower RMS roughness.     

Effect of adhesive and cohesive strength on the tribological behaviour of non‐reactively sputtered TiC thin films

Titanium carbide (TiC) thin films were deposited on D9 steel substrates at room temperature (RT), 200 °C and 400 °C. A compound TiC target was sputtered to deposit films in a non‐reactive argon atmosphere. As‐deposited films were characterised for structural, chemical and mechanical properties. Nanoindentation and scratch tests were performed to evaluate the cohesive and adhesive strength of the films, respectively. Tribological properties of the films were investigated using a tribometer. An increase in nano‐hardness from 7.2 to 10.5 GPa was observed as deposition temperature was increased. The films deposited at RT and 200 °C showed poor adhesion leading to the inferior tribological performance. In contrast, films deposited at 400 °C showed better adhesion which improved the wear resistance. Tribological behaviour of TiC thin films was correlated with contact deformation modes of coatings. These modes revealed significant role of adhesive and cohesive strength associated with the coatings. Copyright © 2009 John Wiley & Sons, Ltd.     

Effects of negative bias on the structural,topological and tribological properties of amorphous carbon films prepared by magnetron sputtering

Amorphous carbon films were prepared in a magnetron sputtering system at different d.c. negative substrate biases (?50, ? 100, ? 150, ? 200 and ? 250 V). The surface roughness, hardness and tribological properties of as‐deposited films were investigated based on the films' structural evolution. Compared with the films deposited at the negative bias of ? 50 and ? 250 V, the microstructure and bond configuration of the films deposited at negative bias of ? 150 V favored a more graphite‐like structure, which had the maximum of graphiticclusters and ordering structures; meanwhile, the films deposited at bias of ? 150 V showed the minimum coefficient of friction (COF) in air, while the wear rate showed a decrease of two orders of magnitude. The tribotesting results were attributed to the increase of graphitic domains of amorphous carbon films which decreased the interfacial shear force and lowered the COF. The uniform and ordering structure induced steady and smooth friction curves. Copyright © 2010 John Wiley & Sons, Ltd.     

Cobalt oxide thin films for high capacity and stable Li-ion battery anode

Journal of Solid State Electrochemistry - Here, we report reactive DC-sputter deposited Co3O4 thin films as a promising and stable Li-ion battery anode. Thin films were deposited on stainless steel...     

Effects of bias voltage on structure and properties of TiAl‐doped a‐C:H films prepared by magnetron sputtering

Hydrogenated TiAl‐doped a‐C:H films were deposited on Si substrates by middle frequency magnetron sputtering TiAl target in argon and methane gas mixture atmosphere. Effects of substrate bias voltage on structure and properties of the films, such as the surface morphology, hardness, chemical nature and bond types, were investigated by means of atomic force microscopy (AFM), XPS, Raman spectroscopy and nanoindentation. The friction and wear behaviors of the deposited films were characterized on an UMT‐2MT tribometer. SEM was utilized to analyze the wear scar on steel balls and debris after sliding on the deposited films under dry friction conditions. The results demonstrated that the film deposited at ? 100 V exhibited low friction coefficient which is attributed to the easier formation of graphitized transfer layer. Copyright © 2010 John Wiley & Sons, Ltd.     

Peculiarities of Electrochemical Bismuth Film Formation in the Presence of Bromide and Heavy Metal Ions

Bi films were deposited on glassy carbon electrode from solutions with and without KBr. The morphology of both types of the films was characterized by scanning electron microscopy (SEM), and their electrochemical behavior was studied by square wave (SWV) and cyclic voltammetry (CV). Bi films were also co‐deposited with common analyte‐heavy‐metals in the presence of KBr and these films also were characterized by SEM, SWV and CV in order to understand the formation of the mixed metal films. All films studied had a different morphology. Bromide addition made the Bi films more compact and uniform, whereas Pb catalyzed Bi film deposition.     

Deposition of small organic molecules by the displacement of two immiscible supercritical phases

A new coating process is described (deposition from two immiscible supercritical phases, or DISP) in which a solution of supercritical carbon dioxide (scCO2) with a desired solute is displaced by supercritical helium (scHe). After depressurization, the solute is deposited on substrates initially submerged in the coating solvent. Micron-sized particles and thin films of sucrose octaacetate (SOA) were formed on silicon wafer substrate coupons from DISP at relatively low temperatures and pressures (< or = 6500 psi and < or = 60 degrees C). The particle size, film thickness, and morphology of SOA were characterized as a function of coating conditions-solution concentrations, withdrawal velocities, and pressures. Particles in the range of 1-14 microm in diameter were deposited at low solute concentrations (< or = 0.2 wt % at 4500 psi), whereas films in the range of 0.1-0.5 microm in thickness were deposited at higher solute concentrations (> or = 1.5 wt % at 4500 psi). Particle sizes decreased with increasing displacement velocity and increasing pressure. Estimates of characteristic times for diffusion and nucleation indicate that DISP is a diffusion-limited process. Optical microscopy and atomic force microscopy (AFM) were used to characterize film morphology, including defect formations and film roughness. Highly uniform films with low root-mean-square (RMS) roughness (approximately 10 angstroms) were obtained at a low displacement velocity of 0.0035 cm/s, while ring-like defect structures were observed in films deposited at a higher displacement velocity of 0.035 cm/s. The film thickness and morphology of the films deposited from DISP were compared with films from normal dip coating with typical organic solvents (acetone and toluene). Films deposited from scCO2 by DISP were much thicker, more uniform, and exhibited much fewer drying defects and lower RMS roughness compared with films from the organic solvents.     

射频等离子沉积聚硅氧烷薄膜的XPS研究

用CVD方法在一台射频放电等离子体聚合实验装置内成功地制备了沉积聚酯薄膜基底有机聚硅氧烷薄膜.该薄膜在有原子氧模拟实验装置内具有抗原子氧剥蚀的良好性能,对航天器等材料表面起到防护作用.有机聚硅氧烷薄膜与等离子体沉积时氧的泄露量有关,且沉积密度经AFM检测有较大的差异.并用XPS较详细考察了不同工艺制备的聚硅氧烷官能团构成和表面状态,以期得到优良的防剥蚀膜.     

Surface-enhanced Raman scattering from bilayers of polystyrene,diglycidyl ether of bisphenol-A,poly(4-vinyl pyridine), and poly(4-styrene sulfonate)

Surface-enhanced Raman scattering (SERS) has been observed from thin films of polystyrene (PS), diglycidyl ether of bisphenol-A (DGEBA), and poly(4-vinyl pyridine) (PVP) deposited on silver island films Degradation of the polymers occurred rapidly during laser irradiation and was accompanied by the appearance of strong bands near 1375 and 1575 cm-1. These bands were attributed to the formation of graphite-like species by the silver-catalyzed thermal oxidation of the polymers induced by localized laser heating of the substrate. When the thin films of PS, DGEBA, or PVP were overcoated with much thicker films of a second polymer such as polystyrene sulfonate (PSS), the degradation was greatly reduced, and excellent SERS spectra of the PS, DGEBA, and PVP films were obtained. Overlayers reduced degradation within the first films deposited on silver island films by restricting the availability of oxygen at the interface to its solubility in the overlayer polymer or by altering the adsorption of oxygen onto the substrate. SERS was observed for the PS, DGEBA, and PVP films and the PSS overlayers when the films were deposited from relatively dilute solutions. When the PS, DGEBA, and PVP films were deposited from more concentrated solutions, SERS was not observed from the PSS overlayers. It was suggested that most of the SERS was due to a short-range, charge-transfer mechanism associated with sites of atomic scale roughness and that SERS was observed from the overlayer when the first film failed to occupy all of the sites.     

50 keV H+ ion beam irradiation of Al doped ZnO thin films: Studies of radiation stability for device applications

Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C using DC magnetron sputtering. These films were bombarded with 50 keV H⁺ beam at several fluences. The pristine and ion beam irradiated films were analysed by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV‐Vis spectroscopy. The X‐ray diffraction analysis, Hall measurements, Raman and UV‐Vis spectroscopy confirm that the structural and transport properties of Al:ZnO films do not change substantially with beam irradiation at chosen fluences. However, in comparison to film deposited at room temperature, the Al:ZnO thin film deposited at 300°C shows increased transmittance (from 70% to approximately 90%) with ion beam irradiation at highest fluence. The studies of surface morphology by scanning electron microscopy reveal that the ion irradiation yields smoothening of the films, which also increases with ion fluences. The films deposited at elevated temperature are smoother than those deposited at room temperature. In the paper, we discuss the interaction of 50 keV H⁺ ions with Al:ZnO films in terms of radiation stability in devices.     

Optimization of the electrodeposition process of high-performance bismuth antimony telluride compounds for thermoelectric applications

High-quality films of bismuth antimony telluride were synthesized by electrodeposition from nitric acid electroplating baths. The influence of a surfactant, sodium ligninsulfonate, on the structure, morphology, stoichiometry, and homogeneity of the deposited films has been investigated. It was found that addition of this particular surfactant significantly improved the microstructural properties as well as homogeneity of the films with a significant improvement in the thermoelectric properties over those deposited in the absence of surfactant. A detailed microprobe analysis of the deposited films yielded a stoichiometric composition of Bi(0.35)Sb(1.33)Te(3) for the films electrodeposited in the absence of surfactant and a stoichiometry of Bi(0.32)Sb(1.33)Te(3) for films deposited in the presence of surfactant.     

一种在室温合成具有宽带隙CdS的简单方法

采用简单的磁控溅射方法, 在室温合成了CdS多晶薄膜. 在溅射CdS多晶薄膜过程中, 分别在Ar 气中通入0%、0.88%、1.78%、2.58%和3.40% (体积分数, φ)的O₂, 得到不同O含量的CdS多晶薄膜. 通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的CdS多晶薄膜进行表征.分析结果表明: O的掺入能得到结合更加致密, 晶粒尺寸更小的CdS多晶薄膜; 与溅射气体中没有O₂时制备的CdS多晶薄膜的光学带隙(2.48 eV)相比, 当溅射气体中O₂的含量为0.88%和1.78% (φ)时, 制备得到的CdS多晶薄膜具有更大的光学带隙, 分别为2.60和2.65 eV; 而当溅射气体中O₂的含量为2.58%和3.40% (φ)时, 得到的CdS光学带隙分别为2.50 和2.49 eV, 与没有掺杂O的CdS的光学带隙(2.48 eV)相当; 当溅射气体中O₂的含量为0.88% (φ)时, 制备的CdS多晶薄膜具有最好的结晶质量. 通过磁控溅射方法, 在溅射气体中O₂含量为0.88% (φ)条件下制备的CdS多晶薄膜表面沉积了CdTe 多晶薄膜并在CdCl₂气氛中进行了高温退火处理, 对退火前后的CdTe多晶薄膜进行了表征. 表征结果显示: CdS中掺入O能得到结合更紧密、退火后晶粒尺寸更大的CdTe多晶薄膜. 通过磁控溅射方法, 在CdS制备过程中于Ar 中掺入O₂, 在室温就能得到具有更大光学带隙的CdS多晶薄膜, 该方法是一种简单和有效的方法, 非常适用于大规模工业化生产.     

Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting

Transition‐metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co‐P films were deposited by using PH₃ plasma as the phosphorus source and an extra H₂ plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self‐limited layer‐by‐layer growth, and the deposited Co‐P films were highly pure and smooth. The Co‐P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co‐P films prepared by the traditional post‐phosphorization method. Moreover, the deposition of ultrathin Co‐P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three‐dimensional (3D) architectures.     

衬底温度对ZnO薄膜晶体结构和电学性质的影响研究

ZnO films were deposited on glass substrates by gas discharge reaction evaporation. The influences of substrate temperature on the surface morphology, crystal structure and electric properties of ZnO films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and complex impedance spectroscopy. The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature. When the substrate temperature is higher than 50 ℃, the films with certain c-axis orientation can be deposited. With the increase of the substrate temperature, the preferential orientation of ZnO films along c-axis is augmented, the tensile stress along c-axis orientation decreases and the grain boundary resistance increases in a marked degree. When the substrate temperature is higher than 100 ℃, the increasing trend of the preferential orientation of ZnO films along c-axis slows down. ZnO films possess high preferential c-axis orientation and best crystalline quality at 180-200 ℃. These possess a smooth surface, symmetrical grain dimension (i.e. 30-40 nm), inerratic crystal shape, less tensile stress and 0.965 epitaxial degree along the c-axis direction. Here the grain boundary effect increases and the grain boundary resistance is evidently more than that of the films deposited at room temperature. The mechanism by which substrate temperature affects crystal structure and grain boundary properties were also discussed.     

Conductive thin film formation onto radiation grafted polymeric surfaces using electroless plating technique

Surface modification of polypropylene films (PP) was carried out via radiation induced graft copolymerization of 4‐vinyl pyridine (4VP) and acrylamide (AAm) to enhance the adhesion ability of the PP surface for electroless deposition of copper. Factors affecting the grafting process such as suitable solvent, comonomer composition and concentration and irradiation dose were optimized. The grafted films produced were characterized by studying their Fourier‐transform infrared (FTIR) spectra and thermal stability. The grafted films were copper‐plated by electroless deposition using Pd as the catalyst to initiate the redox reaction. The influence of catalytic activation method parameters on the plating rate were studied. Scanning electron microscopy revealed a dense and void‐free copper deposited film. The adhesion of the deposited copper film to the modified PP films was determined by measuring the tensile strength of the copper plated films. The electrical characteristics of the copper plated films in comparison with grafted films were studied. The results showed the high adhesion of the deposited copper film to the grafted PP film as well as the high electrical conductivity. Copyright © 2008 John Wiley & Sons, Ltd.     

Nitridation of niobium films by rapid thermal processing: different behaviour of films on oxydized silicon and monocrystalline sapphire substrates

By electron beam evaporation and RF magnetron sputtering 500 nm thick niobium films were deposited on thermally oxidized Si-(100)-wafers and by RF magnetron sputtering on monocrystalline sapphire-(1-102)-wafers. Investigations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed differences of the film morphology depending on the substrate used: films deposited on SiO₂ exhibited an even surface with small crystallites, films on sapphire showed parallel surface structures with relatively large and well-shaped crystallites pointing at regular crystal growth influenced by the substrate. These differences in film morphology were also reflected in different reflection intensities of the films in XRD patterns, indicating that the films deposited on sapphire were strongly textured. In a first set of experiments nitridation in molecular nitrogen and ammonia was investigated. In a second set of experiments, it was tried to form oxynitrides of niobium by annealing the nitrided films in molecular oxygen. Particularly by X-ray-diffraction the formation of different nitride and oxide phases in dependence of the reaction temperature was examined. Further, elemental depth profiles were recorded by secondary ion mass spectrometry (SIMS) to track the position of the phases formed in the film. The different substrates led to disparate film reactivities, resulting in different nitridation grades of the films at similar reaction temperatures. In general, larger crystallite sizes resulted in less chemical reactivity of the films: even after nitridation at 1000 °C metallic niobium was still present in films deposited on sapphire. However, no evidence was obtained for the formation of oxynitrides by the process sequence observed.     

Titanium arsenide films from the atmospheric pressure chemical vapour deposition of tetrakisdimethylamidotitanium and tert-butylarsine

Thin films of titanium arsenide have been deposited from the atmospheric pressure chemical vapour deposition (APCVD) of [Ti(NMe(2))(4)] and (t)BuAsH(2) at substrate temperatures between 350-550 °C. Highly reflective, silver coloured films were obtained which showed borderline metallic-semiconductor resistivities. The titanium arsenide films were analyzed by scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX), powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The films showed variable titanium to arsenic ratios but at substrate temperatures of 500 and 550 °C films with a 1 : 1 ratio of Ti : As, consistent with the composition TiAs, were deposited. Powder XRD showed that all of the films were crystalline and consistent with the formation of TiAs. Both nitrogen and carbon contamination of the films were negligible.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Inclined Substrate Deposition of Nanostructured TiO2 Thin Films for DSSC Application

Nanostructured TiO₂ films were deposited onto Indium Tin Oxide (ITO) and glass substrates by dc reactive magnetron sputtering at different substrate inclination angles. The structural and optical properties of the deposited films were studied by X-ray diffraction, scanning electron microscopy and UV–Vis spectrophotometer, respectively. Dye-sensitized solar cells (DSSC) were assembled using these TiO₂ films as photoelectrodes and the effect of the substrate inclination angle in the preparing process of TiO₂ films on the DSSC conversion efficiency was studied.