X-ray diffraction characterization of MBE grown Pr1−xSrxMnO3 thin films on NGO(1 1 0)

Oxygen plasma-assisted molecular beam epitaxial (MBE) growth of Pr_1−xSr_xMnO₃ (PSMO) thin films has been carried out on NdGaO₃(1 1 0) (NGO) substrates. The growth parameters have been optimized to realize 2D layer-by-layer growth. XRD results of the epilayers show that the PSMO/NGO(1 1 0) thin films are of high crystal quality, as clear diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PSMO(1 1 0)//NGO(1 1 0), i.e., the c-axis being parallel to the surface. Both single scans (ω scan, 2θ/ω scan) and 2-axis reciprocal space mapping (RSM) were performed in an effort to assess the crystal structure, crystalline quality, surface and interface properties of the epitaxial layers. High temperature annealing effects on lattice structure and crystal quality have been studied and discussed. Transport property measurement of the PSMO thin film samples has been carried out and main features discussed.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Structure and composition of secondary phase particles in cobalt-doped TiO2 films

The microstructural properties of secondary phase particles formed in epitaxial Co_xTi_1−xO₂ anatase thin films grown on (0 0 1)LaAlO₃ by a reactive RF magnetron co-sputter deposition are examined. These films exhibit ferromagnetic behavior in magnetization measurements, showing a M–H loop at room temperature with a saturation magnetization on the order of 0.7 μ_B /Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co²⁺ valence state. Cross-section electron microscopy reveals that a significant fraction of the cobalt segregates into Co–Ti–O secondary phase particles. Selected area electron diffraction shows that the secondary phase particles are cobalt-rich anatase. While the cobalt is concentrated in the segregated particles, local energy dispersive spectrometry indicates some Co throughout the film.     

Growth and characterization of MOMBE grown HfO2

HfO₂ dielectric layers were grown directly on the p-type Si (1 0 0) by metalorganic molecular beam epitaxy (MOMBE). Hafnium tetra-butoxide was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The properties of the layers with different thicknesses were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. XRD and HRTEM results showed that the HfO₂ films thinner than 12 nm were amorphous while the films thicker than 12 nm began to crystallize in the tetragonal and the monoclinic phases. The XPS spectra of O 1s show that the O---Si binding energies shifted to the lower binding energy with increasing the HfO₂ layer thickness. Moreover, the snap back phenomenon is observed in accumulation capacitance. These changes are believed to be linked with the decomposition of SiO and the crystallization of HfO₂ layer during the film growth.     

Preparation and structural study of LaMnO3 magnetic material

We report the crystallographic parameters of LaMnO₃ obtained from X-ray diffraction data and electronic properties predictions using the density functional theory (DFT). LaMnO₃ was prepared by the citrate precursor method (CPM). The initial solution was 0.1 M of each cation and the citrate nitrate relation was one. The solution was dried at 373 K; the yielded foam was annealed at 873 K and then was characterized by X-ray diffraction. Diffraction peaks show that the space group is R-3c (#167) with a=b =5.523 Å and c=13.324 Å (rhombohedrally distorted perovskite). Structural results of the Rietveld method have a matching of 97% with that obtained from the Structure Prediction Diagnostic Software. DFT calculation reveals a half-metallic character and its magnetic moment is about 2.0 μ_B.     

High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

InAlAs/InGaAs/InAlAs nanoheterostructures with different structures of metamorphic buffer layer and quantum well, which were grown by means of molecular-beam epitaxy on GaAs and InP substrates, are investigated. The laboratory technology of the growth of the given nanoheterostructures with predicted properties is perfected. The potential of an approach based on the comprehensive analysis of experimental data obtained via different techniques, namely, X-ray diffractometry, electron diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and atomic-force microscopy is studied. The metamorphic buffer layer design is improved on the basis of the results of the performed investigations. A method whereby balanced-mismatched superlattices are introduced directly inside the metamorphic buffer layer is proposed. It is established that the technological parameters of the growth of nanoheterostructures affect their structural perfection and electrophysical properties.     

Structural properties of diamond fine particles and clusters prepared by detonation and decomposition of TNT

The thermal parameter B for three different particle sizes of diamond samples (bulk powder 1–4 μm, fine particle 144–195 Å and cluster 55–61 Å) was determined by the grazing incidence X-ray diffraction method. The values of B were found to be in the range 0.50–0.70 Å² for particles in the size range 195–55 Å and 0.27 Å² for 1–4 μm. All of them are larger than that of diamond bulk. A clear size dependence of B, increasing with decreasing particle size, was found. By analysing X-ray diffraction data at several temperatures the magnitude of B was found to be due to B_S (static part) instead of B_T (dynamic part). The average B_S values obtained were 0.04 Å², 0.19 Å² and 0.27 Å² for bulk powder, fine particle and cluster samples respectively. Ultrahigh resolution transmission electron microscope (TEM) observation confirmed the presence of strain, distortion, roughness and dislocation lines in many particles. TEM images of particles indicate that the clusters were not spherical in shape; they were mostly cubiform and some were truncated prism-like polyhedral. The present study reveals that the B_S component is responsible for the large B value in diamond fine particles and clusters. No clear surface local atomic distortion was found in the particles.     

Magnetic properties of UFe5Sn single crystals

Millimetre-size UFe₅Sn single crystals were grown by the top seed solution growth method and characterized by magnetization, ⁵⁷Fe Mössbauer spectroscopy and specific heat measurements in order to study the magnetic transitions detected in powder samples at 248 and 178 K. The magnetization measurements show different behaviour along the three crystallographic directions but with similar values of spontaneous magnetization along a and c. The transition at 248 K is associated with ferromagnetic ordering of iron moments along the c-axis, while the transition at lower temperature is associated with a reorientation towards b. Mössbauer data show that this reorientation is concomitant to the ordering of the Fe2 sites, which in a large proportion remain paramagnetic between the two transition temperatures. Specific heat measurements are consistent with the establishment of magnetic ordering at 248 K, followed by a spin reorientation at 178 K, yielding γ(0 K)140 mJ/(mol K²) and θ290 K for UFe₅Sn.     

Investigation of phosphorus surface segregation by X-ray scattering measurements

The surface segregation of phosphorus in silicon at low temperatures is studied by using δ doping structures grown by molecular beam epitaxy. The samples are characterized by X-ray crystal truncation rod (CTR) scattering using synchrotron radiation as the light source. The 1/e decay length of P segregation and segregation barrier energy are obtained by fitting the CTR curves within kinematical approximation of X-ray diffraction theory. The surface segregation of P is strong at a growth temperature of 450 °C, with a 1/e decay length of 14 nm, while for growth temperatures below 350 °C, P segregation is negligible with a 1/e decay length not larger than 4 nm. The segregation barrier energy is determined to be 0.43 eV.     

Tantalum irradiation by high power pulsed laser at 1315 and 438 nm wavelengths

The high power pulsed laser Prague asterix laser system (PALS), operating at the fundamental (1ω) and third (3ω) harmonics (1315 and 438 nm wavelengths, respectively), is employed in a single-shot mode to irradiate tantalum targets in vacuum. The laser pulse width is 400 ps and the laser pulse energy ranges between 43 and 736 J at 1ω and between 12 and 230 J at 3ω. High ablation yields (0.1–0.6 mg per pulse) are measured as a function of the laser pulse energy at both wavelengths; at 438 nm higher etching rates are observed. The produced craters are analysed by the scanning electron microscope (SEM) and by the high sensitivity surface profiler system. They are investigated in dimension, shape and angle aperture as a function of the incident laser energy. Different possible mechanisms responsible for the different crater shapes are presented and discussed.     

Growth of β-MnO2 films on TiO2(110) by oxygen plasma assisted molecular beam epitaxy

We have used oxygen plasma assisted MBE to grow epitaxial films of pyrolusite (β-MnO₂) on TiO₂(110) for thicknesses of one to six bilayers (BL). We define a bilayer to be a layer of Mn and lattice O and an adjacent layer of bridging O within the rutile structure. The resulting surfaces have been characterized in situ by reflection high-energy electron diffraction, low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and atomic force microscopy. Well-ordered, pseudomorphic overlayers form for substrate temperatures between 400 and 500°C. Mn–Ti intermixing occurs over the time scale of film growth (1 BL/min) for substrate temperatures in excess of 500°C. Films grown at 400–500°C exhibit island growth, whereas intermixed films grown at temperatures of 500–600°C are more laminar. 1 BL films grown at 450°C are more laminar than multilayer films grown at the same temperature, and form a well-ordered surface cation layer of Mn on the rutile structure with at most 10% indiffusion to the second cation layer.     

Kinetic interface roughening and magneto resistance of sputter-deposited Fe/Ni75B25 multilayers

The roughening of interfaces as a function of layer thickness and magneto transport properties have been investigated on sputter-deposited Fe/Ni₇₅B₂₅ multilayer films. X-ray reflectivity data were recorded for Ni₇₅B₂₅(72 nm) film and for [Fe(2 nm)/Ni₇₅B₂₅(2 nm)]₁₆ and [Fe(4 nm)/Ni₇₅B₂₅(4 nm)]₈ multilayer films. A power law dependence of the interfacial width of growing Fe/Ni₇₅B₂₅ interfaces was observed. The resulting growth exponents β were found to be in the range of 0.55–0.58 in the initial growth stage of the multilayer with lower Fe/Ni₇₅B₂₅ repetition thickness and at approximately 0.34 for multilayer with higher repetition thickness. The growth exponents were compared with theoretical calculations. High resolution electron microscopy revealed the columnar growth of the Fe/Ni₇₅B₂₅ multilayer. Additionally, an increase of magnetoresistance was observed by the multilayering of Ni₇₅B₂₅ films with Fe interlayers.     

Dielectric and magnetic properties of xNiFe2O4+(1−x)Ba0.9Sr0.1TiO3 composites

Magnetoelectric composites, namely, xNiFe₂O₄+(1−x)Ba_0.9Sr_0.1TiO₃ were prepared by standard double sintering ceramic method. The X-ray diffraction analysis was carried out to check the phases formed during sintering and to calculate the lattice parameters. Scanning electron microscope (SEM) micrographs were taken to understand the microstructure of the samples. The dielectric constant (ε′) and loss tangent (tan δ) were measured as a function of frequency in the frequency range 100 Hz–1 MHz. Variation of dielectric constant and loss tangent with temperature and composition has been reported. The hysteresis measurements were done to determine saturation magnetization (M_S) and coersivity (H_c). The variation of saturation magnetization and magnetic moment is interpreted in terms of composition.     

Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics

The polycrystalline sample of LiFe_1/2Ni_1/2VO₄ was prepared by a standard solid-state reaction technique and confirmed by X-ray diffractometry. LiFe_1/2Ni_1/2VO₄ has orthorhombic crystal structure whose dielectric and electric modulus properties were studied over a wide frequency range (100 Hz–1 MHz) at different temperatures (296–623 K) using a complex impedance spectroscopy (CIS) technique. The frequency and temperature dependence of dielectric constant (ε_r) and tangent loss (tan δ) of LiFe_1/2Ni_1/2VO₄ are studied. The variation of ε_r as a function frequency at different temperatures exhibits a dispersive behavior at low frequencies. The variation of the ε_r as a function of temperature at different frequencies shows the dielectric anomaly in ε_r at 498 K with maximum value of dielectric constant 274.49 and 96.86 at 100 kHz and 1 MHz, respectively. Modulus analysis was carried out to understand the mechanism of the electrical transport process, which indicates the non-exponential type of conductivity relaxation in the material. The activation energy calculated from electric modulus spectra is 0.38 eV.     

Epitaxial growth of fully relaxed Si0.75Ge0.25 on SOI substrate

A fully relaxed Si_0.75Ge_0.25 film with low dislocation densities is fabricated by epitaxial growth on SOI substrate without depositing graded buffers. The relaxation mechanism of the SiGe layer directly grown on SOI substrate is also analyzed. For SiGe grown on SOI with low Ge content, the strain is redistributed between SiGe and the top Si of SOI substrate, and the strain residing in SiGe layer can be fully relaxed by the formation and expansion of dislocation half-loops near the SiGe/Si interface. The surface morphology and crystal quality of all samples are analyzed by optical microscopy and transmission electron microscopy (TEM), respectively. Compared to the Si_0.75Ge_0.25 layer epitaxially grown on graded buffer, the Si_0.75Ge_0.25 directly grown on SOI substrate appears good surface morphology and perfect crystal quality.     

The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure

Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO₃ substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO₃ substrates, were investigated. The phase velocity (V_P) was significantly increased by the increase of h/λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/λ. Experimental results on the temperature characteristics of SAW devices are also presented.     

Determination of the crystallographic texture of sintered PrFeB magnets based on X-ray diffraction patterns

An alternative method for determining the degree of crystallographic alignment (cos Θ) of the magnetic Pr₂Fe₁₄B phase (Φ) is proposed. The method is based on the relative X-ray diffracted intensities of the Φ planes of sintered magnets with and without texture. The degree of crystallographic alignment is also determined by X-ray pole figures using the (0 0 4) reflection and considered as a standard reference for comparison. The method is applied to Pr₁₆Fe₇₆B₈ magnets with 0.51cos Θ0.97. The difference between the crystallographic alignments determined by these two methods is 3% within the experimental error. The advantages and limitations of using X-ray diffraction patterns to quantitatively evaluate the texture of sintered magnets are also discussed.     

缓冲层对InSb/GaAs薄膜质量的影响

InSb是制作3~5μm红外探测器的重要材料。在GaAs衬底上外延生长InSb,存在的主要问题在于两种材料间14.6%的晶格失配度,会引入较大的表面粗糙度以及位错密度,使外延材料的结构和电学性能均会受到不同程度的影响。通过系列实验,研究了在生长过程中缓冲层对薄膜质量的影响。利用高能电子衍射仪(RHHEED)得到了合适的生长速率和Ⅴ/Ⅲ比,研究了异质外延InSb薄膜生长中低温InSb缓冲层对材料生长质量以及不同外延厚度对材料电学性质的影响。采用原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线双晶衍射(DCXRD)等方法研究了InSb/GaAs薄膜的表面形貌、界面特性以及结晶质量。通过生长合适厚度的缓冲层,获得了室温下DCXRD半高峰宽为172″,77 K下迁移率为64300 cm²·V^-1·s^-1的InSb外延层。     

Crosstalk between two-photon and two-color (two-photon) excitation in optical beam induced current generation with two confocal excitation beams

We analyze the influence of residual two-photon excitation (2PE) in two-color (two-photon) optical beam induced current (2CE-OBIC) generation in wide band gap semiconductor samples. 2CE-OBIC generation is accomplished with two confocal excitation beams of separation angle θ and wavelengths λ₁ and λ₂ where , λ_e = hc/E_b, h is the Planck’s constant, c is speed of light in vacuum, and E_b is the energy band gap. Because the conduction band of the sample is a continuum, at least one excitation beam would also contribute an undesirable 2PE-OBIC signal that degrades the signal-to-noise ratio of the measured 2CE-OBIC response and broadens the effective OBIC distribution in the sample particularly when θ ≠ 0 or π. We show that the deleterious effects of crosstalk are reduced by a careful selection of λ₁ and λ₂ and the relative excitation beam intensities. λ₁ and λ₂ should be chosen to minimize the ratio of the two-photon absorption coefficients (β₁, β₂) to the 2CE absorption coefficient β₁₂ or at least satisfy the constraint: β₁ + β₂  β₁₂. Keeping the two excitation intensities equal is beneficial only when β₁ = β₂. Otherwise, it is advantageous to bias the intensity ratio towards the wavelength with a lower 2PE absorption coefficient.     

The use of polarization modulation and amplitude-sensitive optical heterodyne interferometry for linear birefringence parameters measurement

A novel common-path polarization modulation and amplitude-sensitive optical heterodyne polarimeter is setup in order to characterize a phase retardation plate (PRP) in real time. The phase retardation ΔΦ and fast-axis angle β of the linear birefringence parameters (LBP) of a PRP are measured simultaneously. Meanwhile, the dynamic ranges of 0° < ΔΦ < 180° and 0° < β < 180° are demonstrated experimentally. In order to measure LBP in real time, a polarization modulation is introduced by continuously rotating the tested PRP such that ΔΦ and β are able to be obtained in terms of the ratio of the amplitudes of S polarization and the ratio of P polarization of the heterodyne signals, respectively. Consequently, this novel method, which combines optical heterodyne interferometry with a polarization modulation technique, not only improves the detection sensitivity, but also provides a real time capability to measure LBP. In addition, the error in the LBP measurement is derived and analyzed.