Ab initio surface reaction energetics of SiH4 and Si2H6 on Si(001)-(2 x 2)

First-principles pseudopotential calculations, within a simple dynamically constrained scheme, have been performed to investigate the reaction of 0.25 ML coverage of SiH4 and Si2H6 with the Si(001)-(2 x 2) surface. The silane molecule (SiH4) is adsorbed on to the surface at a number of different sites (on dimer, interrow, or intrarow) with varying barrier heights. Two distinct structures, which are similar in energy, arise from the initial dissociative reaction SiH4-->SiH3(silyl) + H, where the dissociated species are adsorbed either on the same dimer components or on adjacent dimer components. Several further decays of silyl from SiH4 are presented in two separate regimes of high and low ambient hydrogen coverages. The decomposition of silyl can form two different bridging structures: an on top or an intrarow bridging structure in both of the two hydrogen coverage regimes. The disilane molecule (Si2H6) is also adsorbed upon this surface with varying energy barriers, resulting in a dissociation reaction where two SiH3 species are adsorbed on one dimer or in an adjacent dimer configuration. Plausible energy reaction paths for the above models are presented. The stability of the SiH2 species is also discussed.     

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces

We present a detailed analysis of the interactions between growth precursors, SiH3 radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si2H6) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH2 species) and gas-phase silane (SiH4). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a "fast diffusing state," i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH3 radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH3 radicals is in a "diffusive state." Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.     

Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4)

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.     

Density functional study of XH4 (XSi and Ge) reactivity upon dissociative adsorption onto the Si(100) surface

Total energy calculations based on density functional theory (DFT) with generalized gradient approximation (GGA) and ultrasoft pseudopotential approximation and an analysis tool of atom‐resolved density of states (ADOS) have been used to investigate (1) the energetic profiles for the possible initial dissociative adsorption of XH₄ (X?Si and Ge) onto the Si(100)? (2 × 2) surface to evaluate their reactivity and (2) the effect of surface electronic states of Si(100)? (2 × 2) on gaseous molecular precursors XH₄ (X?Si and Ge) during initial dissociative adsorption to understand the factors governing their reactivity. Our calculated lower‐energy barrier for initial dissociative adsorption of GeH₄ is due to the forming of stronger bond of Si? H between H within GeH₄ and buckled‐down Si atom on the Si(100)? (2 × 2) surface accompanying the larger extent of unbuckling of the buckled Si?Si dimer on the Si(100)? (2 × 2) surface at the transition state. Our evaluated better reactivity for GeH₄ than SiH₄ (a factor of around 14.6) is slightly larger than observed higher reactivity for GeH₄ than SiH₄ (a factor of between 2 and 5 depending on the incident kinetic energy) employed supersonic molecular bean techniques. Finally, our calculated ADOS indicate that the surface electronic states of buckled Si?Si dimer on the Si(100)? (2 × 2) surface energetically favorably participate in the transition state during GeH₄ initial dissociative adsorption to reduce the energy barrier, i.e., enhance its reactivity, in comparison with SiH₄ initial dissociative adsorption onto the Si(100)? (2 × 2) surface under the same reaction conditions. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films

Hydrogen abstraction by growth precursors is the dominant process responsible for reducing the hydrogen content of amorphous silicon thin films grown from SiH(4) discharges at low temperatures. Besides direct (Eley-Rideal) abstraction, gas-phase radicals may first adsorb on the growth surface and abstract hydrogen in a subsequent process, giving rise to thermally activated precursor-mediated (PM) and Langmuir-Hinshelwood (LH) abstraction mechanisms. Using results of first-principles density functional theory (DFT) calculations on the interaction of SiH(3) radicals with the hydrogen-terminated Si(001)-(2x1) surface, we show that precursor-mediated abstraction mechanisms can be described by a chemisorbed SiH(3) radical hopping between overcoordinated surface Si atoms while being weakly bonded to the surface before encountering a favorable site for hydrogen abstraction. The calculated energy barrier of 0.39 eV for the PM abstraction reaction is commensurate with the calculated barrier of 0.43-0.47 eV for diffusion of SiH(3) on the hydrogen-terminated Si(001)-(2x1) surface, which allows the radical to sample the entire surface for hydrogen atoms to abstract. In addition, using the same type of DFT analysis we have found that LH reaction pathways involve bond breaking between the silicon atoms of the chemisorbed SiH(3) radical and the film prior to hydrogen abstraction. The LH reaction pathways exhibit energy barriers of 0.76 eV or higher, confining the abstraction only to nearest-neighbor hydrogens. Furthermore, we have found that LH processes compete with radical desorption from the hydrogen-terminated Si(001)-(2x1) surface and may be suppressed by the dissociation of chemisorbed SiH(3) radicals into lower surface hydrides. Analysis of molecular-dynamics simulations of the growth process of plasma deposited silicon films have revealed that qualitatively similar pathways for thermally activated hydrogen abstraction also occur commonly on the amorphous silicon growth surface.     

Monobridged Si2H4

The rotational spectrum of a new monobridged isomer of Si(2)H(4), denoted here as H(2)Si(H)SiH, has been detected by Fourier transform microwave spectroscopy of a supersonic molecular beam through the discharge products of silane. On the basis of high-level coupled cluster theory, this isomer is calculated to lie only 7 kcalmol above disilene (H(2)SiSiH(2)), the most stable isomeric arrangement of Si(2)H(4), and to be fairly polar, with a calculated dipole moment of mu = 1.14 D. The rotational spectrum of H(2)Si(H)SiH exhibits closely spaced line doubling, characteristic of a molecule undergoing high-frequency inversion. Transition state calculations indicate that inversion probably occurs in two steps: migration of the bridged hydrogen atom to form silylsilylene, H(3)SiSiH, and then internal rotation of the SiH(3) group, followed by the reverse process. The potential energy surface for this type of inversion is quite shallow, with a barrier height of only 2-3 kcalmol. Searches for the rotational lines of silylsilylene, calculated to be of comparable stability to H(2)Si(H)SiH but about five times less polar (mu = 0.23 D), have also been undertaken, so far without success, even though strong lines of H(2)Si(H)SiH have been detected. The favorable energetics and high polarity of monobridged Si(2)H(4) with respect to either disilene or silylsilylene make it a plausible candidate for radioastronomical detection in sources such as IRC + 10216, where comparably large silicon molecules such as SiS, SiC(3), and SiC(4) have already been discovered.     

First-principles theoretical analysis of silyl radical diffusion on silicon surfaces

We report results from a detailed analysis of the fundamental radical precursor diffusion processes on silicon surfaces and discuss their implications for the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of SiH(3) radical migration on the hydrogen-terminated Si(001)-(2 x 1) surface with molecular-dynamics (MD) simulations of SiH(3) radical precursor migration on surfaces of a-Si:H films. Our DFT calculations yield activation energies for SiH(3) migration that range from 0.18 to 0.89 eV depending on the local electronic environment on the Si(001)-(2 x 1):H surface. In particular, when no substantial surface relaxation (Si-Si bond breaking or formation) accompanies the hopping of the SiH(3) radical the activation barriers are highest, whereas hopping between nearest-neighbor overcoordinated surface Si atoms results in the lowest radical diffusion barrier of 0.18 eV; this low barrier is consistent with the activation barrier for SiH(3) migration through overcoordinated sites on the a-Si:H surface. Specifically, the analysis of the MD simulations of SiH(3) radical migration on a-Si:H surfaces yields an effective diffusion barrier of 0.16 eV, allowing for the rapid migration of the SiH(3) radical prior to its incorporation in surface valleys; rapid migration and subsequent incorporation constitute the two-step mechanism responsible for the smoothness of plasma deposited a-Si:H thin films.     

Evidence of dissociative collision induced diatomic and triatomic hydrogen ion formation from hydrocarbon ion interaction with silicon surface

A singly charged hydrocarbon ion CH(x) (+) (x=0,1,2,3,4) was extracted from an electron bombardment type ion source using methane as the reagent gas and irradiated onto the Si(100) surface at glancing angle. Scattered ion spectrometry using an electrostatic energy analyzer revealed that H(+), H(2) (+), and H(3) (+) ions were clearly formed at the scattering angle of 15 degrees , associated with dissociative collisions of hydrocarbon ion species of incidence energy of 1000 eV. The formation of H(3) (+) was tentatively interpreted as resulting from combination of excited atomic hydrogen produced by dissociative collisions of CH(4) (+) ions with Si(100) surface.     

Dissociative chemisorption and energy transfer for methane on Ir(111)

A 3-parameter local hot spot model of gas-surface reactivity is employed to analyze and predict dissociative sticking coefficients for CH(4) incident on Ir(111) under varied nonequilibrium and equilibrium conditions. One Ir surface oscillator and the molecular vibrations, rotations, and translational energy directed along the surface normal are treated as active degrees of freedom in the 14 dimensional microcanonical kinetics. The threshold energy for CH(4) dissociative chemisorption on Ir(111) derived from modeling molecular beam experiments is E(0) = 39 kJ/mol. Over more than 4 orders of magnitude of variation in sticking, the average relative discrepancy between the beam and theoretically derived sticking coefficients is 88%. The experimentally observed enhancement in dissociative sticking as beam translational energies decrease below approximately 10 kJ/mol is consistent with a parallel dynamical trapping/energy transfer channel that likely fails to completely thermalize the molecules to the surface temperature. This trapping-mediated sticking, indicative of specific energy transfer pathways from the surface under nonequilibrium conditions, should be a minor contributor to the overall dissociative sticking at thermal equilibrium. Surprisingly, the CH(4) dissociative sticking coefficient predicted for Ir(111) surfaces at thermal equilibrium, based on the molecular beam experiments, is roughly 4 orders of magnitude higher than recent measurements on supported nanoscale Ir catalysts at 1 bar pressure, which suggests that substantial improvements in catalyst turnover rates may be possible.     

Effects of argon dilution on the translational and rotational temperatures of SiH in silane and disilane plasmas

The effects of argon dilution on the translational and rotational temperatures of SiH in both silane and disilane plasmas have been investigated using the imaging of radicals interacting with surfaces (IRIS) technique. The average rotational temperature of SiH determined from the SiH excitation spectra is approximately 500 K in both SiH(4)/Ar and Si(2)H(6)/Ar plasmas, with no obvious dependence on the fraction of argon dilution. Modeling of kinetic data yields average SiH translational temperatures of approximately 1000 K, with no dependence on the fraction of argon in the SiH(4)/Ar plasmas within the studied range. In the Si(2)H(6)/Ar plasmas, however, the translational temperature decreases from approximately 1000 to approximately 550 K as the Ar fraction in the plasma increases. Thus, at the highest Ar fractions, the translational and rotational temperatures are nearly identical, indicating that the SiH radicals are thermally equilibrated. The underlying chemistry and mechanisms of SiH energy equilibration in Ar-diluted plasmas are discussed.     

Chemical and electrical passivation of single-crystal silicon(100) surfaces through a two-step chlorination/alkylation process

Single-crystal Si(100) surfaces have been functionalized by using a two-step radical chlorination-Grignard (R = MgCl, R = CH3, C2H5, C4H9, C6H5, or CH2C6H5) alkylation method. After alkylation, no chlorine was detectable on the surface by X-ray photoelectron spectroscopy (XPS), and the C 1s region showed a silicon-induced peak shift indicative of a Si-C bond. The relative intensity of this peak decreased, as expected, as the steric bulk of the alkyl increased. Despite the lack of full alkyl termination of the atop sites of the Si(100) surface, functionalization significantly reduced the rate of surface oxidation in air compared to that of the H-terminated Si(100) surface, with alkylated surfaces forming less than half a monolayer of oxide after over one month of exposure to air. Studies of the charge-carrier lifetime with rf photoconductivity decay methods indicated a surface recombination velocity of <30 cm s(-1) for methylated surfaces, and <60 cm s(-1) for Si surfaces functionalized with the other alkyl groups evaluated. Soft X-ray photoelectron spectroscopic data indicated that the H-Si(100) surfaces were terminated by SiH, SiH2, and SiH3 species, whereas Cl-Si(100) surfaces were predominantly terminated by monochloro (SiCl and SiHCl) and dichloro (SiCl2 and SiHCl2) Si species. Methylation produced signals consistent with termination by Si-alkyl bonding arising from SiH(CH3)-, SiH2(CH3)-, and Si(CH3)2-type species.     

Structures, energetics, and aromaticities of the tetrasilacyclobutadiene dianion and related compounds: (Si4H4)(2-), (Si4H4)(2-)·2Li+, [Si4(SiH3)4](2-)·2Li+, [Si4(SiH3)4](2-)·2Na+, and [Si4(SiH3)4](2-)·2K+

In light of the important recent synthesis of a stable tetrasilacyclobutadiene dianion compound by Sekiguchi and co-workers and the absence of theoretical studies, ab initio methods have been used to investigate this dianion and a number of related species. These theoretical methods predict multiple minima for each compound, and most minima contain folded and bicyclic silicon rings. For (Si(4)H(4))(2-), (Si(4)H(4))(2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Li(+), [Si(4)(SiH(3))(4)](2-)·2Na(+), and [Si(4)(SiH(3))(4)](2-)·2K(+), respectively, the energetically lowest-lying structures are designated A-3 (C(2v) symmetry), B-8 (C(1) symmetry), C-1 (C(2) symmetry), D-1 (C(2) symmetry), and E-1 (C(2h) symmetry). None of these structures satisfies both the ring planarity and the cyclic bond equalization criteria of aromaticity. However, all of the representative NICS values of these lowest-lying structures are negative, indicating some aromatic character. Especially, structures C-1 and D-1 of C(2) symmetry effectively satisfy the criteria of aromaticity due to the slightly trapezoidal silicon rings, which are nearly planar with nearly equal bond lengths. SiH(3) substitution for hydrogen in (Si(4)H(4))(2-)·2Li(+) significantly reduces the degree of aromaticity, as reflected in the substantially smaller NICS absolute values for [Si(4)(SiH(3))(4)](2-)·2Li(+) than those of (Si(4)H(4))(2-) and (Si(4)H(4))(2-)·2Li(+). The aromaticity is further weakened in [Si(4)(SiH(3))(4)](2-)·2Na(+) and [Si(4)(SiH(3))(4)](2-)·2K(+) by replacing lithium with the sodium and potassium cations.     

第一过渡系金属硅烯配合物的理论研究

以HF/6-311+G^*基组研究了硅烯SiH₂同第一过渡系金属的配合物MSiH₂的分子轨道特征及键解离能.MSiH₂为共平面构型.其中基态的3TiSiH₂和4CoSiH₂带有明显的双键特征.M-Si键具有共价性质.M-Si的键解离能,从Sc到Cu呈现周期性变化,这种变化趋势同M的金属离子激发能之间存在近似的线性关系.     

Emission cross sections from fragments produced by electron impact on silane

Optical emission spectroscopy in the visible and near UV of a silane plasma was performed in a low pressure hot cathode glow discharge bounded into a magnetized multipolar wall. Emissions from Si, Si⁺, SiH, SiH⁺ and H are shown to originate from the dissociative excitation of silane molecules by electron impact. The absolute cross sections for the various photoemissive processes were measured in the 17–68 eV range. The relevance of optical emission spectroscopy to silane plasma diagnostics is discussed.     

Effects of Si substitution on the Ei reaction of alkyl sulfoxides

A computational study has been carried out on the effects of SiH3 substitution on the Ei reaction of alkyl sulfoxides. SiH3 substitution in the beta-position (relative to the sulfur atom) is found to lower the barrier to elimination about 5 kcal mol(-1), in line with qualitative experimental observations. However, SiH3 substitution at the alpha-position has a similar, if smaller, effect. It is argued that the barrier-lowering in the latter case is mainly correlated with changes in the overall deltaH of the elimination reaction. In contrast, electronic effects in the transition state overcome an unfavorable delta(deltaH) when SiH3 is in the beta-position. On the basis of estimated magnitudes of the various energy changes and the fractional change in bond orders in the transition state, it is argued that both hyperconjugative stabilization and inductive effects of Si substitution contribute. Finally, it is shown that the elimination reaction by SiH3 transfer from Cbeta to O has a surprisingly high enthalpic barrier, given its modest endothermicity, and it is suggested that this is due to a forced unfavorable geometry at the Si center in the transition state.     

Structural changes, P-P bond energies, and homolytic dissociation enthalpies of substituted diphosphines from quantum mechanical calculations

The molecular structures of the diphosphines P(2)[CH(SiH(3))(2)](4), P(2)[C(SiH(3))(3)](4), P(2)[SiH(CH(3))(2)](4), and P(2)[Si(CH(3))(3)](4) and the corresponding radicals P[CH(SiH(3))(2)](2), P[C(SiH(3))(3)](2), P[SiH(CH(3))(2)](2), and P[Si(CH(3))(3)](2) were predicted by theoretical quantum chemical calculations at the HF/3-21G*, B3LYP/3-21G*, and MP2/6-31+G* levels. The conformational analyses of all structures found the gauche conformers of the diphosphines with C(2) symmetry to be the most stable. The most stable conformers of the phosphido radicals were also found to possess C(2) symmetry. The structural changes upon dissociation allow the release of some of the energy stored in the substituents and therefore contribute to the decrease of the P-P bond dissociation energy. The P-P bond dissociation enthalpies at 298 K in the compounds studied were calculated to vary from -11.4 kJ mol(-1) (P(2)[C(SiH(3))(3)](4)) to 179.0 kJ mol(-1) (P(2)[SiH(CH(3))(2)](4)) at the B3LYP/3-21G* level. The MP2/6-31+G* calculations predict them to be in the range of 52.8-207.9 kJ mol(-1). All the values are corrected for basis set superposition error. The P-P bond energy defined by applying a mechanical analogy of the flexible substituents connected by a spring shows less variation, between 191.3 and 222.6 kJ mol(-1) at the B3LYP/3-21G level and between 225.6 and 290.4 kJ mol(-1) at the MP2/6-31+G* level. Its average value can be used to estimate bond dissociation energies from the energetics of structural relaxation.     

A calculation of the rovibronic energies and spectrum of the B1A1 electronic state of SiH2

The B1A1 electronic state of silylene (SiH2) is the second excited singlet state of the molecule and, like the analogous c state of methylene (CH2), it is quasilinear with symmetry 1sigmag+ at linearity. This state dissociates to Si(1D) + H2(1sigmag+). At equilibrium, the B state of SiH2 has an energy that we calculate to be 0.71 eV above that of the dissociation products. However, there is a barrier to dissociation that allows quasibound rovibrational levels to occur, and some have been observed recently [Y. Muramoto et al., J. Chem. Phys. 122, 154302 (2005)]. Starting with our analytical ab initio potential-energy surface, we adjusted it in a fitting to the experimental term values in order to determine the optimum potential-energy function in the bound region. This potential has a C2v equilibrium structure with a SiH bond length of 1.459 angstroms and a bond angle of 165.4 degrees; the barrier to linearity is only 129 cm(-1). Using the optimized potential-energy surface we calculate B-state term values, and using our calculated y and z dipole moment surfaces, we simulate the rotation-vibration spectrum of the state in order to assist in the detection of the matrix isolation spectrum.     

Silylation of an OH-terminated self-assembled monolayer surface through low-energy collisions of ions: a novel route to synthesis and patterning of surfaces

Using a multi-sector ion-surface scattering mass spectrometer, reagent ions of the general form SiR(3) (+) were mass and energy selected and then made to collide with a hydroxy-terminated self-assembled monolayer (HO-SAM) surface at energies of approximately 15 eV. These ion-surface interactions result in covalent transformation of the terminal hydroxy groups at the surface into the corresponding silyl ethers due to Si--O bond formation. The modified surface was characterized in situ by chemical sputtering, a low-energy ion-surface scattering experiment. These data indicate that the ion-surface reactions have high yields (i.e. surface reactants converted to products). Surface reactions with Si(OCH(3))(3) (+), followed by chemical sputtering using CF(3) (+), yielded the reagent ion, Si(OCH(3))(3) (+), and several of its fragments. Other sputtered ions, namely SiH(OCH(3))(2)OH(2) (+) and SiH(2)(OCH(3))OH(2) (+), contain the newly formed Si--O bond and provide direct evidence for the covalent modification reaction. Chemical sputtering of modified surfaces, performed using CF(3) (+), was evaluated over a range of collision energies. The results showed that the energy transferred to the sputtered ions, as measured by their extent of fragmentation in the scattered ion mass spectra, was essentially independent of the collision energy of the projectile, thus pointing to the occurrence of reactive sputtering.A set of silyl cations, including SiBr(3) (+), Si(C(2)H(3))(3) (+) and Si(CH(3))(2)F(+), were similarly used to modify the HO-SAM surface at low collision energies. A reaction mechanism consisting of direct electrophilic attack by the cationic projectiles is supported by evidence of increased reactivity for these reagent ions with increases in the calculated positive charge at the electron-deficient silicon atom of each of these cations. In a sequential set of reactions, 12 eV deuterated trimethylsilyl cations, Si(CD(3))(3) (+), were used first as the reagent ions to modify covalently a HO-SAM surface. Subsequently, 70 eV SiCl(3) (+) ions were used to modify the surface further. In addition to yielding sputtered ions of the modified surface, SiCl(3) (+) reacted with both modified and unmodified groups on the surface, giving rise not only to such scattered product ions as SiCl(2)OH(+) and SiCl(2)H(+), but also to SiCl(2)CD(3) (+) and SiCl(2)D(+). This result demonstrates that selective, multi-step reactions can be performed at a surface through low-energy ionic collisions. Such processes are potentially useful for the construction of novel surfaces from a monolayer substrate and for chemical patterning of surfaces with functional groups.     

(SiH)48X12 Heterofullerenes with the Group III and V Dopants: A DFT Prediction of Geometry,Stability, and Electronic Structure

We have applied DFT calculations to devise some (SiH)₄₈X₁₂ heterofullerenes with replacing of 12 Si–H units with a series of the group III and V dopants, P, N, As, B, Al and Ga, with the configuration of one dopant per pentagonal ring. Our results indicate that binding energies of heterofullerenes with group III dopants are smaller than those of heterfullerenes with group V dopants. Density of state obtained for the systems indicate a distinct change near the valence level compared to that of Si₆₀H₆₀, and a local energy level appears after the doping. (SiH)₄₈X₁₂ heterofullerenes with the group III and V dopants are composed of positively and negatively charged dopant atoms, each of which is surrounded by opposite charged Si atoms. The electrophilicity values of (SiH)₄₈X₁₂ heterofullerenes, except for (SiH)₄₈N₁₂, are greater than that of their parent. Because of the higher electronegativity of group V elements and electron transfer from the cages to the group V dopants, electrophilicity values for the (SiH)₄₈X₁₂ heterofullerenes with the group V dopants are always smaller than those of heterofullerenes with the group III dopants.