Thermal and electrical conductivities of silver–indium–tin alloys

The variations of thermal conductivity with temperature for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) were measured using a radial heat flow apparatus. From the graphs of thermal conductivity versus temperature, the thermal conductivities of solid phases at their melting temperature for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) were found to be 46.9±3.3, 53.8±3.8, 61.2±4.3, 65.1±4.6 and 68.1±4.8 W/Km, respectively. The variations of electrical conductivity of solid phases versus temperature for the same alloys were determined from the Wiedemann–Franz equation using the measured values of thermal conductivity. From the graphs of electrical conductivity versus temperature, the electrical conductivities of the solid phases at their melting temperatures for the Ag–[x] wt% Sn–20 wt% In alloys (x=8, 15, 35, 55 and 70) alloys were obtained to be 0.036, 0.043, 0.045, 0.046 and 0.053 (×10⁸/Ωm), respectively. Dependencies of the thermal and electrical conductivities on the composition of Sn in the Ag–Sn–In alloys were also investigated. According to present experimental results, the thermal and electrical conductivities for the Ag–[x] wt% Sn–20 wt% In alloys linearly decrease with increasing the temperature and increase with increasing the composition of Sn.     

Effect of electrotransfer and indium additions on contact melting and phase formation in bismuth–tin systems

Contact melting with and without electrotransfer is studied in Sn–Bi systems with small additions of indium to each component. The effect admixtures have on the rate of contact melting is shown to be unclear. The structures of the obtained alloys are highly inhomogenous with multiple inclusions of dendrites. An X-ray analysis of the transformed interlayers is performed. A number of intermetallides are observed, including ones not found on the phase diagrams of binary systems. An attempt is made to explain these findings.     

Slowdown of atomic diffusion in liquid gallium–indium alloy under different nanoconfinements

NMR studies were carried out on three isotopes, ⁷¹Ga, ⁶⁹Ga, and ¹¹⁵In, in liquid gallium-indium (Ga–In) alloy embedded into porous glasses with 200 and 5 nm pore sizes at two magnetic fields, 9.4 and 17.6 T. Spin-lattice relaxation and the Knight shift were found to depend on pore size. For porous glass with 5 nm pores the relaxation rate was field-dependent which evidenced that the extreme narrowing limit was no longer valid. Magnetization recovery data were used to evaluate the correlation times of atomic mobility and the quadrupole constants under nanoconfinement.     

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in ¹²⁵Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the ¹²⁵Te NMR chemical shifts in PbTe-based alloys, Pb_1−xGe_xTe and Pb_1−xSn_xTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS ¹²⁵Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the ¹²⁵Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.     

63Cu NMR analysis of microstructure evolution in Al–Cu–Mg alloys

⁶³Cu NMR spectroscopy has been used to detect metastable Guinier–Preston–Bagaryatsky (GPB) zones and nanoscale precipitates of equilibrium S-phase (Al₂CuMg) in dilute alloys of aluminium containing copper and magnesium with compositions which lie in the α?+?S phase field. The GPB zones are observed to form rapidly at room temperature with a time development closely related to the Vickers hardness. The final development of S-phase in the alloy has been confirmed by the observation of a line shape in the alloy identical to that observed in a specimen prepared from stoichiometric Al₂CuMg. Analysis of the hyperfine structure of the ⁶³Cu line shape observed for S-phase shows clearly that two Cu sites are present with approximately equal population. This result suggests that possibly two crystallographically distinct Al₂CuMg phases are present. The addition of small amounts of silver to Al–Cu–Mg alloys in the α?+?θ phase field is known to induce the formation of Ω-phase: a slight distortion of tetragonal θ-phase Al₂Cu. A hyperfine-structured ⁶³Cu line shape assigned to Ω-phase, indicating one distinct Cu site, has been observed in two separate Al–1.7?at.%?Cu–0.33?at.%?Mg alloys containing 0.1 and 0.18?at.%?Ag, but not in the same Al–Cu–Mg alloy without Ag.     

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

In this study, the resistive switching performance of amorphous indium–gallium–zinc oxide (a-IGZO) resistive switching random-access memory (ReRAM) was improved by inserting a thin silicon oxide layer between silver (Ag) top electrode and a-IGZO resistive switching layer. Compared with the single a-IGZO layer structure, the SiO₂/a-IGZO bi-layer structure exhibits the higher On/Off resistance ratio larger than 10³, and the lower operation power using a smaller SET compliance current. In addition, good endurance and excellent retention characteristics were achieved. Furthermore, multilevel resistance states are obtained through adjusting SET compliance current and RESET stop voltage, which shows a promise for high-performance nonvolatile multilevel memory application.     

Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer

We reported the effects on the electrical behavior of amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (V_th) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and V_th control of a-IGZO TFTs.     

Aberration-corrected HAADF-STEM investigations of precipitate structures in Al–Mg–Si alloys with low Cu additions

Precipitates in a lean Al–Mg–Si alloy with low Cu addition (~0.10 wt.%) were investigated by aberration-corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Most precipitates were found to be disordered on the generally ordered network of Si atomic columns which is common for the metastable precipitate structures. Fragments of known metastable precipitates in the Al–Mg–Si–(Cu) alloy system are found in the disordered precipitates. It was revealed that the disordered precipitates arise as a consequence of coexistence of the Si-network. Cu atomic columns are observed to either in-between the Si-network or replacing a Si-network column. In both cases, Cu is the center in a three-fold rotational symmetry on the Si-network. Parts of unit cells of Q′ phase were observed in the ends of a string-type precipitates known to extend along dislocation lines. It is suggested that the string-types form by a growth as extension of the B′/Q′ precipitates initially nucleated along dislocation lines. Alternating Mg and Si columns form a well-ordered interface structure in the disordered Q′ precipitate. It is identical to the interface of the Q′ parts in the string-type precipitate.     

Interaction between solid nickel and a tin–indium eutectic melt,and the nature of eutectic alloys

Structural transformations during reactions between nickel and an indium–tin eutectic melt are studied via the diffraction of high-energy synchrotron radiation. It is shown that InNi intermetallic compound is the first to form after melting. No phases belonging to a Ni–Sn system are observed. A hypothesis concerning the nanocluster structure of the eutectic melt is proposed: Structural formations with forbidden five-fold, seven-fold, and higher-order rotational axes of symmetry lie at the heart of nanosized clusters.     

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.     

Kinetics and products of crystallization of Fe84−xVxB16 amorphous alloys

Isothermic crystallization of a series of Fe_84–xV_xB₁₆ (x = 0 to 8 at. % V) amorphous alloys was studied by the electrical resistivity, coercivity and⁵⁷Fe Mössbauer spectroscopy methods. Two stages of the process were observed corresponding to the primary -Fe(-V) formation by the growth-of-nuclei mechanism and the eutectic mixed borides — metal crystallization. Concentration dependences of kinetics parameters (Avrami exponent, activation energy) and the changes of electrical and magnetic properties were found and the influence of vanadium on the crystallization process is discussed.Dedicated to Dr. Svatopluk Krupika on the occasion of his 65th birthday.Thanks are due to Prof. L. Potocký, afárik University, Koice, for his kind providing the amorphous ribbons, and to Dr. J. Krejí from the author's Institute for the EDAX analyses.     

CO2 laser-induced crystallization of sol–gel-derived indium tin oxide films

Indium tin oxide (ITO) thin films prepared by the sol–gel method have been deposited by the dip-coating process on silica substrates. CO₂ laser is used for annealing treatments. The electrical resistivity of sol–gel-derived ITO thin films decreased following crystallization after exposure to CO₂ laser beam. The topological and electrical properties of the irradiated surfaces have been demonstrated to be strongly related to the coating solution and to the laser processing parameters. Optimal results have been obtained for 5 dip-coating layers film from 0.4 mol/l solution irradiated by 0.6 W/m² laser power density. In this case, homogeneous and optically transparent traces were obtained with a measured sheet resistance of 1.46×10² Ω/□.     

Effect of gallium alloying on the structure,the phase composition,and the thermoelastic martensitic transformations in ternary Ni–Mn–Ga alloys

The effect of gallium alloying on the structure, the phase composition, and the properties of quasibinary Ni₅₀Mn_50–zGa_z (0 ? z ? 25 at %) alloys is studied over a wide temperature range. The influence of the alloy composition on the type of crystal structure in high-temperature austenite and martensite and the critical martensitic transformation temperatures is analyzed. A general phase diagram of the magnetic and structural transformations in the alloys is plotted. The temperature–concentration boundaries of the B2 and L2₁ superstructures in the austenite field, the tetragonal L1₀ (2M) martensite, and the 10M and 14M martensite phases with complex multilayer crystal lattices are found. The predominant morphology of martensite is shown to be determined by the hierarchy of the packets of thin coherent lamellae of nano- and submicrocrystalline crystals with planar habit plane boundaries close to {011}_B2. Martensite crystals are twinned along one of the 24 \(24\left\{ {011} \right\}{\left\langle {01\bar 1} \right\rangle _{B2}}\) “soft” twinning shear systems, which provides coherent accommodation of the martensitic transformation–induced elastic stresses.     

Formation and ordering of local magnetic moments in Fe–Al alloys

The density functional theory is used to study the local magnetic moments in Fe–Al alloys depending on concentration (from 29 to 44 at% Al) and the Fe nearest environment. We have found three different solutions for the system: a spin-spiral wave (SSW) which has a minimum energy and two collinear states, a ferromagnetic one and a state with both positive and negative Fe magnetic moments (the Fe atoms with many neighboring Al atoms around them have negative magnetic moments, while the other Fe atoms—positive). Both the SSW and the negative Fe moments agree with the experiments. Magnetization curves taken from the literature are analyzed. The assumption of percolation character of the size distribution of magnetic clusters describes well the experimental superparamagnetic behavior above 150 K.     

Origin of tweed in Au–Cu–Al alloys

The premartensitic tweed in Au–Cu–Al alloys, contrary to previous thought that resort to defects, is confirmed to be associated with the coherent embryos of an intermediate phase (I phase) embedded in parent phase. The parent?→?I phase transformation temperature was measured by differential scanning calorimeter and dynamic mechanical analysers, which shifts from 82.3 to 557.6?°C depending on the alloy composition. X-ray diffraction and transmission electron microscopes (TEM) results show that the parent?→?I phase transformation is a charge density wave transition that cannot be suppressed even by melt-spun method, which shows obvious compositional inhomogeneity between I phase and parent. The results imply that the parent?→?I phase transition is a fast displacive transformation coupled with diffusion. Moreover, accompanying the parent?→?I phase transformation, alloys demonstrate diversified microstructure revealed by TEM observation, from tweed to chessboard nanowires or twins. These findings provide the experimental evidence for that parent?→?I phase transformation in Au–Cu–Al alloys is originated from pseudospinodal decomposition as theoretically predicted.     

Displacement fields around Guinier–Preston 1 zones in Al–Cu alloys: investigations using MD and ADF-STEM image simulations

The displacements of atoms around Guinier–Preston 1 (GP1) zones in Al–Cu alloys at a temperature of 295?K have been investigated using molecular dynamics (MD) simulations. The magnitude of the displacements at the first Al layer adjacent to a GP1 zone reached 24% strain and this value decreased with distance from the zone to zero at about 40th Al layer. Strain fields near a GP1 zone were evaluated by calculating strain tensors around individual atoms. The obtained strain maps suggested that the equilibrium Cu content in a GP1 zone should be 100%. The atomic configurations determined by MD simulations were utilised for multislice image simulations of annular dark-field scanning transmission electron microscopy (ADF-STEM) to investigate the effect of foil thickness and the depth position of a GP1 zone in a foil on ADF-STEM images. The atomic displacements in ADF-STEM images were smaller than the MD result due to foil thickness and electron channelling.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.