Manifestation of MnCl2 fillers incorporated into the polymer matrices in their dielectric properties

Polyethyl methacrylate (PEMA) films filled with different mass fractions of MnCl₂ were prepared using a casting method. The structural and electrical properties were studied. The filling content dependence of certain IR absorption bands was correlated with the obtained physical parameter characterizing the other properties. DC electrical resistivity (ρ) was measured in the temperature range 340-420 K for PEMA films filled with MnCl₂ fillers. An intrachain one-dimensional interpolaron hopping mechanism was assumed to interpret the electrical conduction. AC conductivity behavior of all the prepared samples was investigated over the frequency range (42-5M) Hz and under different isothermal stablilization in the temperature range 300-423 K. It suggested that the hopping mechanism might be playing an important role in the conduction process, in low temperature regime. The values of σ₀, A, and S satisfying the suitable fit of the conductivity data, as well as the corresponding (σ_DC).     

Mechanisms of charge transfer and magnetoresistance in CuInSe<Subscript>2</Subscript>

The electrical conductivity and magnetoresistance effect of n and p types of CuInSe₂ single crystals were studied within the temperature range of 4.2–300 K and within magnetic fields of up to 6 T. It was found that the hopping mechanism of conductivity dominates in the temperature range of 4.2–100 K. A peculiarity of electrical conductivity behavior, accompanied by a change in the magnetoresistance sign in the vicinity of T ≈ 60 K, was revealed.     

Dielectric behavior of sodium borate glasses

The dielectric constant and the electrical conductivity of the transparent glasses in the composition 3Na₂O-7B₂O₃ (NBO) were investigated in the 100 Hz–10 MHz frequency range at various temperatures. The activation energy associated with the electrical relaxation determined from the electric modulus spectra was found to be 0.76 ± 0.02 eV, close to that (0.74 ± 0.02 eV) obtained from DC conductivity studies. The frequency-dependent electrical conductivity was analyzed using Jonscher’s power law. Temperature-dependent behavior of the frequency exponent (n) suggested that the correlated-barrier hopping model was the most appropriate to rationalize the electrical transport phenomenon in NBO glasses.     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Electrical conductivity of pulverulent iron-cobalt molybdates Co1−xFexMoO4: evidence for hopping conduction

Different mixed iron-cobalt molybdates Co_1−xFe_xMoO₄ (0 < x ≤ 1) were prepared by means of a ceramic process. The influence of the isostructural substitution of Co²⁺ by Fe²⁺ and Fe³⁺ on the electrical conductivity of CoMoO₄ was studied in the temperature range (50–600°C). The results show that the iron substitution increases the electrical conductivity and changes the conduction mechanism of CoMoO₄. From a band conduction mechanism with an activation energy higher than 0.8 eV the conduction mode transforms into a hopping mechanism between the Fe²⁺ and Fe³⁺ ions in the octahedrally coordinated divalent cation sublattice. The activation energy is lower (0.4 eV) and does not alter around the polymorphic transition temperature. Owing to careful oxidations of the samples into cation deficient phases it was shown that the conductivity is proportional to the [Fe²⁺]/[Fe³⁺] ratio. These mild oxidations confirm the hopping mechanism. The presence of Co²⁺/Co³⁺ pairs has a minor contribution to the overall conductivity process. Paper presented at the 2nd Euroconference, Funchal, Madeira, Portugal, 10 – 16 Sept. 1995     

Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

Electrical properties of a-antimony selenide

This paper reports conduction mechanism in a-Sb₂Se₃ over a wide range of temperature (238 to 338 K) and frequency (5 Hz to 100 kHz). The d.c. conductivity measured as a function of temperature shows semiconducting behaviour with activation energy ΔE=0.42 eV. Thermally induced changes in the electrical and dielectric properties of a-Sb₂Se₃ have been examined. The a.c. conductivity in the material has been explained using modified CBH model. The band conduction and single polaron hopping is dominant above room temperature. However, in the lower temperature range the bipolaron hopping dominates.     

Ac electrical parameters of Al-ZnPc-Al organic semiconducting films

The ac electrical parameters of thermally evaporated zinc phthalocyanine, ZnPc, semiconducting thin films was measured in the temperature range of 180–390 K and frequency between 0.1 and 20 kHz. Aluminum electrode contacts were utilized to sandwich the organic ZnPc semiconducting films. Capacitance and loss tangent decreased rapidly with frequency at high temperatures, but at lower temperatures a weak variation is observed. An equivalent circuit model assuming ohmic contacts could qualitatively and successfully explains capacitance and loss tangent behavior. The ac conductivity showed strong dependence on both temperature and frequency depending on the relevant temperature and frequency range under consideration. Ac conductivity σ (ω) is found to vary with ω, as ω ^s with the index s ≤ 1.35 suggesting a dominant hopping conduction process at low temperatures (< 250 K) and high frequency. The conductivity of some samples did not increase monotonically with temperature. This behavior was attributed to oxygen exhaustion of the sample as its temperature is increased. The ac conductivity behavior at low temperatures of ZnPc films could be described well by Elliott model assuming hopping of charge carriers between localized sites.     

Low-temperature electrical conductivity of congruent lithium niobate crystals

The electrical conductivity of lithium niobate crystals was investigated at temperatures between 80 and 450 K as a function of the oxidation-reduction annealing conditions. The results are interpreted in terms of polaron electrical conductivity at room temperature and above. A reduction in the measurement temperature leads to “freezing out” of small-radius polarons, and hopping of Heitler-London bipolarons via unfilled Nb_Li sites becomes the main mechanism responsible for the electrical conductivity. Fiz. Tverd. Tela (St. Petersburg) 40, 1307–1309 (July 1998)     

The effect of Fe substitution on the electrical and thermal conductivity and thermopower of Ca3(FexCo1−x)4O9 synthesised by a sol–gel process

The effect of Fe substitution for Co on direct current (DC) electrical and thermal conductivity and thermopower of Ca₃(Co_1−xFe_x)₄O₉ (x = 0, 0.05, 0.08), prepared by a sol–gel process, was investigated in the temperature range from 380 down to 5K. The results indicate that the substitution of Fe for Co results in an increase in thermopower and DC electrical resistivity and substantial (14.9–20.4% at 300K) decrease in lattice thermal conductivity. Experiments also indicated that the temperature dependence of electrical resistivity ρ for heavily substituted compounds Ca₃(Co_1−xFe_x)₄O₉ (x = 0.08) obeyed the relation lnρ ∝ T^−1/3 at low temperatures, T < ~55K, in agreement with Mott’s two-dimensional (2D) variable range hopping model. The enhancement of thermopower and electrical resistivity was mainly ascribed to a decrease in hole carrier concentration caused by Fe substitution, while the decrease of thermal conductivity can be explained as phonon scattering caused by the impurity. The thermoelectric performance of Ca₃Co₄O₉ was not improved in the temperature range investigated by Fe substitution largely due to great increase in electrical resistivity after Fe substitution.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Structure and electrical properties of SrO-borovanadate (V2O5)0.5(SrO)0.5−y(B2O3)y glassses

SrO-borovanadate glasses with nominal composition (V₂O₅)_0.5(SrO)_0.5−y(B₂O₃)_y, 0.0≤y≤0.4 were prepared by a normal quench technique and investigated by direct current (DC) electrical conductivity, inductively coupled plasma (ICP) spectroscopy, infrared (IR) spectroscopy and X-ray powder diffraction (XRD) studies in an attempt to understand the nature of mechanism governing the DC electrical conductivity and the effect of addition of B₂O₃ on the structure and electrical properties of these glasses. XRD patterns confirm the amorphous nature of the present glasses and actual compositions of the glasses were determined by ICP spectroscopy. The temperature dependence of DC electrical conductivity of these glasses has been studied in terms of different hopping models. The IR results agree with previous investigations on similar glasses and it has been concluded that similar to SrO-vanadate glasses, metavandate chain-like structures of SrV₂O₆ and individual VO₄ units also occur in SrO-borovanadate glasses. The SrV₂O₆ and VO_n polyhedra predominate in the low B₂O₃-containing SrO-borovanadate glasses as B substitutes into the V sites of the various VO_n polyhedra and only when the concentration of B₂O₃ exceeds the SrO content do BO_n structures appear. This qualitative picture of three distinct structural groupings for Sr-vanadate and Sr-borovanadate glasses is consistent with the proposed glass structure on previous IR and extended X-ray absorption fine structure (EXAFS) studies on these types of glasses. The conductivity results were analyzed with reference to theoretical models existing in the literature and the analysis shows that the conductivity data are consistent with Mott's nearest neighbor hopping model. Analysis of the conductivity data shows that they are consistent with Mott's nearest neighbor hopping model. However, both Mott VRH and Greaves models are suitable to explain the data. Schnakenberg's generalized polaron hopping model is also consistent with temperature dependence of activation energy. However, various model parameters such as density of states, hopping energy, etc. obtained from the best fits were not found to be in accordance with the prediction of the Mott model.     

Electrical properties and conductivity mechanism of LiCuFe2(VO4)3

This paper reports conduction mechanism in LiCuFe₂(VO₄)₃ over a wide range of temperatures (300 to 712 K) and frequencies (209 Hz to 5 MHz). The DC conductivity of the material is thermally activated with activation energy about 0.66 eV. In LiCuFe₂(VO₄)₃, the electrical conductivity is probably due to the hopping of alkali lithium ion along the channel [001]. Temperature dependence of AC conductivity is studied at different frequencies. Frequency exponent s is found to decrease with increase in temperature. The results have been explained on the basis of correlated barrier hopping (CBH) model. Numerical calculations agree well with experimental results. The results show that the frequency and temperature-dependent behavior of AC conductivity of the studied materials are predominantly due to single polaron hopping.     

Dc and Ac conductivity of La2CuO4+δ

The complex conductivity of La₂CuO_4+δ has been investigated for frequencies 20 Hz≤ν≤4 GHz and temperatures 1.5K≤T≤450 K. Two single crystals with δ≈0 and δ≈0.02 were investigated, using dc (four-probe), reflectometric and contact-free techniques. At high temperatures the dc conductivity is thermally activated with low values of the activation energy. For low temperatures Mott's variable range hopping dominates. The real and imaginary parts of the ac conductivity follow a power-law dependence σ∼v ^s, typical for charge transport by hopping processes. A careful analysis of the temperature dependence of the ac conductivity and of the frequency exponents has been performed. It is not possible to explain all aspects of the ac conductivity in La₂CuO_4+δ by standart hopping models. However, the observed minimum in the temperature dependence of the frequency exponents strongly suggests tunneling of large polarons as dominant transport process.     

Electrical conduction of SnBi4Se7

Polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compounds in the quasi-binary system SnSe-Bi₂Se₃ were characterized by measurements of temperature and field dependence of electrical conductivity. The current density–electric field characteristics were found to be non-linear, especially when the applied electric field exceeds a certain value which is dependent on the temperature T. Furthermore, the electrical conductivity can be enhanced by the applied electric field. The characteristic length a(T) seemed to be enhanced with increasing temperature. Electrical conductivity measurements elucidated the semiconducting behaviour of both compounds, especially when the temperature of measurement exceeds a certain value for SnBi₄Se₇, and hopping and band type conduction are dominant at low and high ranges of temperature, respectively. Below 200 K, the electrical conductivity of SnBi₄Se₇ decreases with increasing temperature. Meanwhile, additional scattering and hopping seemed to characterize the behaviour of SnBi₄Se₇ due to the Sn doping of Bi₂Se₃ resulting in additional states at the Fermi level. PACS 72.20.-i; 72.15.-v     

Electrical properties and dielectric relaxation of thermally evaporated zinc phthalocyanine thin films

The electrical transport properties and dielectric relaxation of Au/zinc phthalocyanine, ZnPC/Au devices have been investigated. The DC thermal activation energy at temperature region 400-500 K is 0.78 eV. The dominant conduction mechanisms in the device are ohmic conduction below 1 V and space charge limited conduction dominated by exponential trap distribution in potentials >1 V. Some parameters, such as concentration of thermally generated holes in valence band, the trap concentration per unit energy range at the valence band edge, the total concentration of traps and the temperature parameter characterizing the exponential trap distribution and their relation with temperatures have been determined. The AC electrical conductivity, σ_ac, as a function of temperature and frequency has been investigated. It showed a frequency and temperature dependence of AC conductivity for films in the temperature range 300-400 K. The films conductivity in the temperature range 400-435 K increased with increasing temperature and it shows no response for frequency change. The dominant conduction mechanism is the correlated barrier hopping. The temperature and frequency dependence of real and imaginary dielectric constants and loss tangent were investigated.     

Dielectric relaxation and ionic conductivity studies of LiCaPO<Subscript>4</Subscript>

The AC conductivity of the LiCaPO₄ compound has been measured in the temperature range 634–755 K and the frequency range 300 Hz–5 MHz. The impedance data were fitted to an equivalent circuit consisting of series combination of grains, grains boundary, and electrode elements. Dielectric data were analyzed using complex electrical modulus M* at various temperatures. The modulus plots are characterized by the presence of two relaxation peaks thermally activated. The activation energies obtained from the analysis of M″ (0.90 eV) and conductivity data (0.94 eV) are very close, revealing an ionic hopping mechanism.     

Mixed alkali effect in boroarsenate glasses

We report, for the first time the study of mixed alkali effect (MAE) in boroarsenate glasses. Density, DSC, DC electrical conductivity and IR studies have been carried out for xK₂O-(40−x)Na₂O-50B₂O₃-10As₂O₃ glasses. The DC electrical conductivity was measured in the temperature range 100 °C to below the glass transition temperature. The strength of the MAE in T_g, DC electrical conductivity and activation energy has been determined. It is observed that the strength of MAE in DC electrical conductivity is less pronounced with increase in temperature. The results are explained by the structural model recently proposed by Swenson and coworkers, supporting molecular dynamic results. The IR studies show that the glass system contains BO₃ and BO₄ units in the disordered manner.     

Structural and dielectric studies of lead-free ceramics: Na1/2Y1/2TiO3

The polycrystalline samples of Na_1/2Y_1/2TiO₃ were prepared by the mixed-oxide method. A preliminary X-ray structural analysis was shown to exhibit the formation of a single-phase compound with an orthorhombic structure. Microstructural analysis by scanning electron microscopy (SEM) exhibits well defined grains distributed uniformly through out the sample suggesting the compactness and homogeneity of the sample. Detailed studies of dielectric properties of Na_1/2Y_1/2TiO₃ in a wide frequency range (102–106 Hz) at different temperatures (31–500°C) show a dielectric anomaly at 105°C, which may be related to a ferroelectricparaelectric phase transition as suggested by hysteresis loop at room temperature. An ac conductivity (σ _ac) of the material is mainly governed by the polaron hopping mechanism, which is also influenced by both frequency and temperature. The activation energy was obtained from the plot of temperature with a.c. conductivity.      

Electrical conductivity improvement of strontium titanate doped lead vanadate glasses by nanocrystallization

The structural and electrical conductivity (σ) of annealed SrTiO₃–PbO₂–V₂O₅ glasses were studied. The annealing of initially glass samples leads to formation of nanocrystalline grains embedded in the glassy matrix. XRD patterns of the glass–ceramic samples show that nanocrystals were embedded in the glassy matrix with an average grain size of 32 nm. The glass–ceramic nanocrystals obtained by annealing at temperatures close to the crystallization temperature T_c exhibit enhancement of electrical conductivity up to four orders of magnitude than initially glasses. The enhancement of the electrical conductivity due to annealing was attributed to two interdependent factors: (i) an increase of concentration of V⁴⁺–V⁵⁺ pairs; and (ii) formation of defective, well-conducting regions along the glass–crystallites interfaces. From the conductivity temperature relation, it was found that small polaron hopping model was applicable at temperature above θ_D/2 (θ_D, the Debye temperature). The electrical conduction at T >θ_D/2 was due to non-adiabatic small polaron hopping (SPH) of electrons between vanadium ions. The parameters obtained from the fits of the experimental data to this model appear reasonable and are consistent with glass composition.