A new measurement of the weak magnetism term in the betaspectra of B and N

The betaspectra of ¹²B and ¹²N have been measured with a NaI crystal as spectrometer. Assuming a shape correction factor 1 + aW + bW² and b₋ = 1.106 × 10⁻⁴ MeV⁻², b₊ = −1.397 × 10⁻⁴ MeV⁻², the spectra yield a₋ = (+0.91 ± 0.11) × 10⁻² MeV⁻¹ and a₊ = (−0.07 ± 0.09) × 10⁻² MeV⁻. the a₋ − a₊ = (+0.98 ± 0.09) × 10⁻² MeV⁻¹ is in agreement with the weak magnetism prediction.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

Evidence for the radioactive decay of Ra by C emission

Using a magnetic spectrometer and an intense ²²⁶Ra source, first evidence for the radioactive decay of ²²⁶Ra by ¹⁴C emission was obtained leading to a measured branching ratio relative to -particles of (3.2±1.6)×10⁻¹¹. In addition, the decay of ²²²Ra by ¹⁴C emission, previously reported, was clearly observed and an upper limit was set for the emission of ³⁴Si from ²⁴¹Am.     

Escape of charged particles at stopping annihilation of antiprotons in the heavy nuclei of nuclear photoemulsion

“Rare” annihilation channels for antiprotons stopping on heavy (Ag, Br) nuclei of photoemulsion, have been sought; 4872 stops of antiprotons on photoemulsion nuclei are analysed. Events of formation and decay of the hyperfragment _Λ⁴H, escape of ⁸He and ⁸Li nuclei, one-prong stars with the mean range 79.5±5.1 μm of secondary slow “b” particles are found among the annihilation stars at capture on nuclei (Ag, Br). The lower limits for the production probability of _Λ⁴H and ⁸He, ⁸Li nuclei per antiproton stopping in the nuclei (Ag, Br) are

W_Λ⁴H2×10⁻⁴ and W_⁸He,⁸Li=(1.3±0.6)×10⁻³.

The branching ratio for the production of one-prong stars with the secondary “b” particles is at least (1.3±0.6)×10⁻³. Possible mechanisms for a production of these events in annihilation processes are considered.     

Search for a light neutral particle in the decay of the 3.68 MeV state in C

A search is made for a short lived neutral particle, ø, in the decay of the 3.68 MeV (3/2^-) state in ¹³C. No evidence for such a particle with a rest mass in the region of 1.7–2.0 MeV/c² is found with a limit on the branching ratio Γ _ø/Γ_γ7×10 ⁻⁵. An upper limit of 10⁻⁶ is placed for the coupling of such a particle to proton/neutron.     

βγ(CP) correlation measurements and anti-analogue structure in the decay of Ca

β-γ(CP) correlation measurements have been carried out on the sequence in the decay of the ground state of ⁴⁹Ca to the (presumed) anti-analogue state at 3.105 MeV excitation in ⁴⁹Sc. An asymmetry parameter of A = −0.132 ± 0.017 was obtained, making any spin-parity assignment other than very unlikely for the 3.105 MeV state. The deduced Fermi matrix element for the decay is |M_{v| = |1.4 ± 9.7| × 10⁻³}, which leads to an isospin impurity ( ) corresponding to the mixing of the analogue state (at 11.6 MeV) and the 3.105 MeV state of ||² 1.6 × 10⁻⁵. This leads in turn to an effective Coulomb matrix element of |H_c| = |3.9 ± 27.4| keV, a low value compared to the value of 100 keV obtained from a theoretical estimate based on simple shell-model wave functions for the single-particle states involved.     

Cross section of the charged current reaction C(ve, e)Ng.s.

The charged current nuclear transition ¹²C(v_e, e⁻)¹²N_g.s. has been observed in the KARMEN experiment. The flux average cross section for v_e from μ⁺ decay at rest is determined to be σ = [8.1±0.9(stat.)±0.75 (syst.)]×10⁻⁴²cm². For the first time also the energy dependence of the cross section has been measured for neutrino energies up to 50 MeV.     

The ratio of K-capture to positon emission in the decay of P

The ratio of K-capture to positon emission in the 2.5 min decay of ³⁰P has been measured by a proportional counter-flow technique. The experimental value of the K/β⁺ was found to be (1.24 ± 0.04) × 10⁻³ in agreement with the conventional theoretical ratio i.e. apparently supporting the view that exchange and overlap effects are small.     

Observation of two-photon emission in nuclear pion capture

The emission of two photons above 25 MeV energy was observed in the capture of stopped pions by beryllium and carbon with a rate of (1.0 ± 0.1) × 10⁻⁵, respectively (1.4 ± 0.2) × 10⁻⁵ per capture. These rates are about two to four times greater than various free-nucleon estimates based on the π⁻+π⁺→γγ annihilation mechanism alone.     

Hadronic production by ee collisions at the energy 990 MeV with the Orsay storage ring

Data were taken at the energy 2E = 990 MeV to search for multibody events, with the same large solid angle detector which has been used for the measurement of the , ω andφ production by e⁺e⁻ annilations. Assuming a π⁺π⁻π⁰π⁰ production by the quasi two-body process e⁺e⁻ → → ωπ⁰ we give the correspondi ng cross section σ(e⁺e⁻ → π⁺π⁻π⁰π⁰) = (1.1 ± 0.5) 10⁻³² cm². Since no events with 3 and 4 charged pions have been observed σ(e⁺e⁻ → π⁺π⁻π⁰π⁻) 1.5 × 10⁻³³ cm².     

A new upper limit for the decay μ→eee

A search for the decay μ⁺→e⁺e⁺e⁻, in which no candidate was found, yields a new upper limit for the branching ratio R_μ→3e<1.6×10⁻¹⁰ (90% confidence). A total of 16 decays were observed, in agreement both in number and momentum distribution with V - A theory.     

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

The influence of the oxygen partial pressure on the properties of indium tin oxide films deposited by rf reactive magnetron sputtering has been studied. The oxygen partial pressure was varied from 3.2 × 10⁻⁴ to 1.0 × 10⁻³ mbar. It has been found that the 4 × 10⁻⁴ mbar of oxygen partial pressure is a critical point. When the oxygen partial pressure is lower than 4 × 10⁻⁴ mbar, the deposition rate of the films is high; the films have low transmittance and electrical resistivity; the X-ray diffraction shows that the films have a random orientation and the images of the scanning electron microscopy show that the films surface are smooth without structure. When the pressure is higher than 4 × 10⁻⁴ mbar, the deposition rate is low and does not change as the oxygen partial pressure is further increased; the transmittance and the electrical resistivity are both high; the films show the preferred orientation along the (440) direction; the films surface show a clear structure and as the pressure is increased further, the films become porous. Considering both the factor of transmittance and resistivity, the optimum oxygen partial pressure will be 3.6 × 10⁻⁴ mbar. The films prepared at this pressure have 80% transmittance and 9 × 10⁻⁴ Ω cm resistivity.     

Optical pumping of the 2p3sP0 State of Ne (I = 3/2): g factor and metastability exchange cross section

A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p⁵ 3s³P₀ (F = 3/2) state of ²¹Ne. A magnetic resonance experiment leads to the measurement of the g factor g (³P₀) = 3.027 (8) × 10⁻⁴ to be compared with the theoretical prediction (3.025(6) × 10⁻⁴). One obtains also the metastability exchange cross section σ(³P₀) = 18.4 ± 4 Ų for collisions between metastable (³P₀) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.     

Enhanced performances of ZnO-TFT by improving surface properties of channel layer

Top-contact thin film transistors with ZnO as the channel layer and thermally grown SiO₂ as the gate dielectric were fabricated by using rf sputtering. The performances of ZnO-TFTs with different thicknesses of the active layer were investigated and the optimized condition was obtained. With the active layer thickness from 25 to 70 nm, the leakage current of devices increased from 10⁻¹⁰ to 10⁻⁸ A, and the on/off ratio decreased from 1.2×10⁷ to 2×10⁴. Atomic force microscope research indicated that with the thickness increased, the surface morphology of the active layer improved noticeably at first and then deteriorated. The 25-nm-thick ZnO TFT had the best surface morphology, and showed the best performance with a field effect mobility of 5.1 cm²/V S, on/off ratio of 1.2×10⁷ and threshold voltage of 20 V. This indicates that the surface properties of the channel layer have crucial affects on the performances of ZnO-TFTs.     

ENDOR of monovalent Cr in KMgF3 and the hyperfine constant of Cr as a function of covalency

Using ENDOR, the hyperfine constant of ⁵³Cr⁺ in KMgF₃ is found to be ⁵³A = (20.754 ± 0.003) × 10⁻⁴cm⁻¹. Taken with recent data for Cr⁺ in other environments, the result confirms that the dependence of ⁵³A on covalency is remarkably linear.     

The study of hydronium NASICON conductivity with deuterium

The ionic conductivity of the bulk phase of bonded hydronium NASICON (Hyceram^TM) was measured at equilibrium with an H₂O/N₂ and then a D₂O/N₂ atmosphere, each at 100% relative humidity and 75% relative humidity over the temperature range 25°C to 50°C. At 100% relative humidity and 25°C, the protonic system had a bulk conductivity of 5.0×10⁻⁴ S/cm and an activation energy of 17.3kJ/mole; the same sample, when deuterated, had a bulk conductivity of 2.2×10⁻⁴ S/cm and an activation energy of 19.3kJ/mole. At 75% relative humidity and 25°C, the conductivity of the protonated system decreased to 1.4×10⁻⁴S/cm with an activation energy of 24.1 kJ/mole. The deuterated sample at 75% relative humidity had a bulk conductivity of 5.4×10⁻⁵ S/cm with an activation energy of 26.0 kJ/mole. The isotope effect suggested a proton hopping (Grotthus) mechanism as the means by which the protons pass through the lattice.     

Analysis of probabilities for nuclear excitation by near-resonant electronic transitions

Theoretical results are presented for nuclear excitation of low-lying isometric states of ¹⁹⁷Au, ¹⁸⁹Os and ²³⁷Np by a near-resonant electronic deexcitation process known as NEET. A detailed comparison is made between current and previous theoretical results in order to clarify a number of anomalies. For ¹⁹⁷Au, the only case in which the current experimental precision appears to be sufficient to provide a stringent test of theory, the theoretical result for the NEET probability is P_NEET=3.6×10⁻⁸. This is a factor of three lower than previous theoretical results and reduces the difference between theory and the recent experimental result, P_NEET=(5.0±0.6)×10⁻⁸, to a level of approximately 2σ.     

Electron-stimulated nitridation of Si(100) in pure ammonia

We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10⁻⁶–10⁻⁹ Torr and 5 × 10⁻³–5 × 10⁻² A/cm², respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10⁻⁹–10⁻⁷ Torr. Beyond 10⁻⁷ Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.     

Davydov splitting and two-photon excitation of cadmium tungstate (CdWO4) single crystal phosphorescence

Phosphorescence characteristics of CdWO₄ excited by one-photon (λ = 308 nm) and two-photon (λ = 570–590 nm) processes were measured. A Davydov splitting of 120 ± 20 cm⁻¹ was obtained in the phosphorescence spectra, suggesting a diffusion coefficient of about 1.2 × 10⁻² cm² s⁻¹, and a diffusion length of about 3.1 × 10⁻⁴ cm for the room temperature measured lifetime of 8μs. The phosphorescence quantum efficiency was less than 2% at low temperatures (only 0.25% at room temperature), indicating that the dominant decay mechanism was radiationless. The radiative lifetime was thus estimated as 1–2 ms. The two-photon phosphorescence excitation is characterized by an absorption cross-section of the order of 10⁻⁴⁹cm⁴s.     

Absolute desorption yields of metastable atoms from the surface of solid rare gases induced by exciton creation

Absolute yields of the metastable excited atoms desorbed from the surfaces of solid Ne and Ar by the creation of surface and bulk excitons have been measured using monochromated synchrotron radiation as a selective excitation source. We have obtained the absolute yields of (2.3 ± 0.7) × 10⁻³, (1.4 ± 0.4) × 10⁻³, and (7.8 ± 2.3) × 10⁻⁴ atoms/photon at the excitation of S1, B1 and S′ exciton for Ne, respectively, and 1 × 10⁻⁵ atoms/photon at S1 excitation for Ar. The probability for metastable atom desorption is found to be about 2 to 10% at the excitation of S1 exciton on the surface of solid Ne.