Relaxation and electronic states of Au(100), (110) and (111) surfaces

Using a first-principles method based on density functional theory, we investigate the surface relaxation and electronic states of Au(100), (110) and (111) surfaces. The calculated results show that the relaxations of the (100) and (110) surfaces of the metal are inward relaxations. However, the Au(111) surface shows an ‘anomalous’ outward relaxation, although several previous theoretical studies have predicted inward relaxations that are contrary to the experimental measurements. Electronic densities of states and the respective charge density distribution along the Z-axis of the relaxed surfaces are analyzed, and the origin of inward and outward relaxation is discussed in detail.     

Cluster model approach for electronic structure of Si and Ge(111) and GaAs(110) surfaces

For the purpose of exploring how realistic a cluster model can be for semiconductor surfaces, extended Huckel theory calculations are performed on clusters modeling Si and Ge(111) and GaAs(110) surfaces as prototypes. Boundary conditions of the clusters are devised to be reduced. The ideal, relaxed, and reconstructed Si and Ge(111) surfaces are dealt with. Hydrogen chemisorbed (111) clusters of Si and Ge are also investigated as prototypes of chemisorption systems. Some comparison of the results with finite slab calculations and experiments is presented. The cluster-size dependence of the calculated energy levels, local densities of states, and charge distributions is examined for Si and Ge(111) clusters. It is found that a 45-atom cluster which has seven layers along the [111] direction is large enough to identify basic surface states and study the hydrogen chemisorption on Si and Ge(111) surfaces. Also, it is presented that surface states on the clean Si and Ge(111) clusters exist independent of relaxation. Further, the calculation for the relaxed GaAs(110) cluster gives the empty and filled dangling-orbital surface states comparable to experimental data and results of finite slab calculations. The cluster approach is concluded to be a highly useful and economical one for semiconductor surface problems.     

Oxygen adsorption on the LaB6(100), (110) and (111) surfaces

Oxygen adsorption on the LaB₆(100), (110) and (111) clean surfaces has been studied by means of UPS, XPS and LEED. The results on oxygen adsorption will be discussed on the basis of the structurs and the electronic states on the LaB₆(100), (110) and (111) clean surfaces. The surface states on LaB₆(110) disappear at the oxygen exposure of 0.4 L where a c(2 × 2) LEED pattern disappears and a (1 × 1) LEED pattern appears. The work function on LaB₆(110) is increased to ～3.8 eV by an oxygen exposure of ～2 L. The surface states on LaB₆(111) disappear at an oxygen exposure of ～2 L where the work function has a maximum value of ～4.4 eV. Oxygen is adsorbed on the surface boron atoms of LaB₆(111) until an exposure of ～2 L. Above this exposure, oxygen is adsorbed on another site to lower the work function from ～4.4 to ～3.8 eV until an oxygen exposure of ～100L. The initial sticking coefficient on LaB₆(110) has the highest value of ～1 among the (100), (110) and (111) surfaces. The (100) surface is most stable to oxygen among these surfaces. It is suggested that the dangling bonds of boron atoms play an important role in oxygen adsorption on the LaB₆ surfaces.     

Surface states at the clean surfaces of cleaved Si(111) and GaAs(110)

A combination of ellipsometric data on the electronic transitions from occupied to unoccupied surface states and published photoemission data on the energy distribution of the occupied surface states has been used to construct models of the surface states densities at the cleaved Si (111) and GaAs (110) surfaces.     

Local density of states of GaAs and InAs surfaces: Ideal (111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface

The ideal (111), (001) and (110) surfaces of GaAs and InAs are investigated by means of the LCAO Green function recursion method to obtain local density of states. Main emphasis is laid on the analysis of the nature and character of the inherent surface states. For this purpose, several imperfections on the (111) and the (001) surface (i.e. vacancies and steps with varying topology) are treated to demonstrate the local character of Shockley surface states and to confirm their chemical nature. The applicability of the results obtained to other A³B⁵ compounds is discussed. Comparison with experiment and other theoretical investigations is also made.     

Surface densities of states for normal photoemission from Mo(110) and W(111)

Tight-binding calculations of one-dimensional densities of states on Mo(110) and W(111) are presented. As reported earlier for W(001), hybridization gaps contain localized surface states or resonances, and band-edge singularities are modified near the surface. Prominent structures in directional photoemission spectra are discussed in the light of our results, and further experiments using polarized light are suggested to test our assignments.     

Structural,electronic and magnetic properties of the (001), (110) and (111) surfaces of rocksalt sodium sulfide: A first-principles study

First principles study of the structural, electronic and magnetic properties of the (111), (110) and (001) surfaces of rocksalt sodium sulfide (rs-NaS) are reported. The results show that the bulk half-metallicity of this compound is well preserved on the surfaces considered here except for Na-terminated (111) surface. The spin-flip gap at the S-terminated (111), (001) and (110) surfaces are close to the bulk value. Using ab-initio atomistic thermodynamics, we calculate the surface energies as a function of chemical potential to find the most stable surface. We find that the Na-terminated (111) surface is the most stable one over the whole allowed range of chemical potential, while the surface energies of the (001) and (110) surfaces approach the most stable surface energy at the sulfur rich environment. We have also calculated the interlayer exchange interaction in bulk and Na-terminated (111) surface by classical Heisenberg model and we found that the surface effects do not change these kinds of interactions significantly.     

Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces

External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.     

Sensitivity of bulks orbital bands of Cu(111) to oxidation

Angle resolved photoelectron spectra from the Cu(111) surface obtained with polarized light show that features originating from the s orbital bands of the bulk are much more sensitive to oxidation than features originating from d-like bands. We conclude that sensitivity of a peak to oxidation alone cannot be taken as valid evidence for the existence of surface states.     

Role of the 2D surface state continuum and projected band gap in charge transfer in front of a Cu(111) surface

Electron capture by Li+ and H projectiles in grazing scattering from Cu(111) and Cu(110) surfaces is studied experimentally and theoretically. Whereas data for Cu(110) can be described by established theoretical methods treating resonant charge transfer with a free-electron metal, data for Cu(111) show pronounced deviations from this approach. We interpret our observations by the effect of the projected L-band gap of the Cu(111) surface. In particular, the quantum states of reduced dimension (2D surface state continuum) play a dominant role in electron transfer.     

Spin-resolved photoemission of surface states of W(110)-(1 x 1)H

The surface electronic states of W(110)-(1 x 1)H have been measured using spin- and angle-resolved photoemission. We directly demonstrate that the surface bands are both split and spin-polarized by the spin-orbit interaction in association with the loss of inversion symmetry near a surface. We observe 100% spin polarization of the surface states, with the spins aligned in the plane of the surface and oriented in a circular fashion relative to the Smacr; symmetry point. In contrast, no measurable polarization of nearby bulk states is observed.     

Electronic properties of TiC(100) and polar TiC(111) surfaces

The energy bands of films of TiC have been calculated using the linear-combination-of-atomic-orbitals method with parameters obtained by a fit to the bulk band structure. The Madelung potentials and charge redistribution have been determined self-consistently. For the neutral TiC(100) surface, the density of states (DOS) is similar to that of the bulk. For the non-neutral Ti-covered TiC(111) surface, Ti 3d-derived surface states appear around the Fermi energy E_F. The long-range electric field produced by the polar surfaces is screened by the charge redistribution, and the polar surfaces are stabilized. Characteristic features of TiC(111) compared to other surfaces of TiC are attributed to the high surface DOS at E_F.     

Vibrational EELS studies of CO chemisorption on clean and carbided (111), (100) and (110) nickel surfaces

Room temperature adsorption of CO on bare and carbided (111), (100) and (110) nickel surfaces has been studied by vibrational electron energy loss spectroscopy (EELS) and thermal desorption. On the clean (100) and (110) surfaces two configurations of CO adsorbed species, namely “terminal” and bridge bonded CO, are observed simultaneously. On Ni(111), only two-fold sites are involved. The presence of superficial carbon lowers markedly the bond strength of CO on Ni(111)C and Ni(110)C surfaces, while no adsorption has been detected on the Ni(100)C surface. Moreover, on the carbided Ni(110)C surface, the adsorption mode for adsorbed CO is changed with respect to the clean surface; only “terminal” CO is then observed.     

A vibrational study of ammonia chemisorbed on Ni(110) and Ni(111): whither goest the metal-nitrogen stretching mode on FCC (111) surfaces?

The adsorption of ammonia on the Ni(110) and Ni(111) surfaces has been studied with high resolution (≤ 65 cm_?1) electron energy loss spectroscopy (EELS) combined with thermal desorption spectroscopy. The EELS spectra of the initial chemisorbed layer or α state on each surface are very different. Ammonia chemisorbed on the Ni(110) surface exhibits a strong Ni-N stretching mode at 570 cm^?1 which is absent on the Ni(111) surface. The Ammonia adsorption site appears to be different on the Ni(110) and Ni(111) surfaces. We suggest that the absence of the M-N stretching mode on the Ni(111) surface is a general characteristic of the ammonia adsorption site on the (111) surfaces of fcc Group VIII metals.     

Tight-binding calculations of (111) surface densities of states of Ge and GaAs

We have used the tight-binding method to calculate the local densities of states of unreconstructed Ge (111) and GaAs (111), ($\text{111}$) surfaces. In the unrelaxed surface configuration we find two types of states for each surface. The effects of relaxation on Ge surface states are also discussed.     

C_2H_x(x=4～6)在Ni(111)表面吸附的DFT研究

采用密度泛函理论与周期平板模型相结合的方法,对物种C_2H_x(x=4～6)在Ni(111)表面的top,fcc,hcp和bridge位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析.结果表明:C_2H_6和C_2H_4在Ni(111)表面的最稳定吸附位都是top位,吸附能分别是-36.41和-48.62 kJ·mol~(-1),物种与金属表面吸附较弱;而C_2H_5在Ni(111)表面的最稳定吸附位hcp的吸附能是-100.21 kJ·mol~(-1),物种与金属表面较强;三物种与金属表面之间都有电荷转移,属于化学吸附.     

Model band structure of reconstructed (111) 2 × 1 surface of silicon

We have computed the electronic band structure for a model of the 2 × 1-reconstructed (111) surface of Si, based on 2 two-dimensional net of dangling bonds. A pairing of surface atoms is assumed, involving a displacement and a tilting of the dangling bonds towards each other. The energy gap that separates the two bands of surface states obtained increases with the degree of reconstruction, which is taken as a parameter. Experimental data, particularly surface optical absorption, find a satisfactory explanation in terms of this calculation, which indicates in Si (111) 2 × 1 a shift of the surface atoms by about 8% of their ideal distance.     

CHx(x=2~4)在Fe(110)表面吸附的DFT研究

采用密度泛函理论与周期平板模型相结合的方法,对物种CHx(x=2~4)在Fe(110)表面的top,hcp,SB和LB位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析。结果表明：CH4在Fe(110)表面的最稳定吸附位都是SB位,吸附能别是-38.14 kJ•mol-1,CH3在Fe(110)表面的最稳定吸附位都是top位,吸附能别是-171.78 kJ•mol-1,而CH2在Fe(110)表面的最稳定吸附位hcp的吸附能是-342.43 kJ•mol-1;CH3 和CH2两物种与金属表面成键,属于化学吸附。     

CO stretching vibrations on Pt(111) and Pt(110) studied by sumfrequency generation

Optical sum-frequency generation (SFG) is used to characterize CO stretching vibrations on Pt(111) and Pt(110) surfaces. Different adsorption sites (terminal, bridge and step sites) are identified in the SFG spectra of CO on Pt(111), in good quantitative agreement with previous infrared reflection-absorption experiments on this system. For CO on Pt(110) we only observe CO molecules on terminal sites. The measured CO stretching vibration frequencies on Pt(110), both for low and high coverages, are at variance with the results of previous infrared studies. Our SFG results for CO on Pt(110) are confirmed by independent EELS measurements which, in addition, also reveal the frustrated rotational mode and the metal-CO vibration. The measured frequency of 2065 cm⁻¹ for low CO coverage on Pt(110)-(1 × 2) is consistent with a previously proposed empirical relation between the frequency of an isolated adsorbed CO molecule and the coordination number of the binding Pt surface atom.     

CHx(x=2~4)在Fe(110)表面吸附的DFT研究

采用密度泛函理论与周期平板模型相结合的方法,对物种CHx(x=2~4)在Fe(110)表面的top,hcp,SB和LB位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析。结果表明：CH4在Fe(110)表面的最稳定吸附位都是SB位,吸附能别是-38.14 kJ•mol-1,CH3在Fe(110)表面的最稳定吸附位都是top位,吸附能别是-171.78 kJ•mol-1,而CH2在Fe(110)表面的最稳定吸附位hcp的吸附能是-342.43 kJ•mol-1;CH3 和CH2两物种与金属表面成键,属于化学吸附。