Zn掺杂La2CuO4热电势和磁化率研究

测量了La2CuO4掺Zn样品在不同降温速率下(330K保温05h,然后分别以6Kh,02Ks的速度降到8K)的直流磁化率和热电势.实验结果表明,反铁磁温度TN不随降温速率变化而变化,其直流磁化率也未受很大影响.高温热电势弱的温度依赖关系表明为极化子气体的贡献.热电势在转折温度Tdrop之下的快速降低是由于二维反铁磁涨落的贡献.热电势在更低温度的拐点TS与载流子的局域化有关.降温速率变化时,Tdrop和TS都有明显的变化.Zn掺杂对Tdrop和TS没有明显影响,但导致了更强的载流子局域化.讨论了上述现象产生的物理图像 关键词： La2CuO4 直流磁化率 热电势     

氧掺杂La2CuO4的热导

实验研究了氧掺杂的La2CuO4样品从330K经过慢速冷却和快速冷却后其热导率随温度的变化关系,测量温区为77－300K,在120K以下,两种情况下测得的热导率都随温度的升高而降低。热导率值相同,在120K附近达到极小,120K以上热导率随温度的升高而升高。但经过慢速冷却过程测得的热导值明显低于经过快速冷却过程测得的热导值,分析认为这与两种情况下样品中不同的无序磁散射有关。     

电子型超导体Sm1.85Ce0.15CuO4单晶的赝能隙行为研究

测量了在O2中退火不同时间的Sm1.85Ce0.15CuO4单晶样品的热电势S与电阻率ρ的温度依赖关系.所有的样品电阻率高温下呈现线性温度依赖行为.未退火的样品在148K发生超导转变,而退火后的样品在低温下发生金属半导体相变,其超导电性消失,表明退火引起了载流子浓度下降,体系进入欠掺杂态.随着温度降低,所有的样品ST和ρT曲线在200K附近(T)都发生斜率的改变,可以用赝能隙现象解释.热电势S在低温下出现一个正的曳引峰,意味着载流子符号发生改变,由电子型转变为空穴型 关键词： 电子型超导体 热电势 赝能隙     

准一维有机超导体(TMTSF)2ClO4的高精度温差电动势研究

测量了准一维有机超导体(TMTSF)2ClO4单晶a方向不同降温速率下的高精度温差电动势(6—280K).高温下的温差电动势表现出线性行为，不能被正常的一维电子能带理论所解释.在240K左右观察到温差电动势斜率发生反常突变.在140K左右温差电动势向下逐渐偏离线性行为，这与1D—2D的维度渡越相关.对阴离子有序—无序相变温度Ta（Ta=24K）附近的温差电动势结果与比热和电阻率的数据进行了比较.对于极慢速降温的温差电动势，求导后可以看到相变的痕迹.随着通过Ta降温速率的增大，在Ta之下的温差电动势数值出现了一个逐渐增大的整体抬高.对此进行了讨论. 关键词： 低维体系 输运性质 温差电动势     

Ru掺杂La0.7Ca0.2Ba0.1Mn1-xRuxO3的磁性和输运性质

利用固相反应法制备了Ru掺杂La0.7Ca0.2Ba0.1Mn1-xRuxO3(x=0～0.06)的多晶样品,探讨了Ru掺杂对体系结构,输运性质以及磁电阻的影响.多晶X射线衍射证实所有样品均保持简单立方钙钛矿结构.通过零场冷却(ZFC)和加场冷却(FC)下的磁化曲线的测量发现随温度降低样品发生了顺磁(PM)到铁磁(FM)的相变,且样品的居里温度(Tc)随Ru掺杂发生了显著的变化,从x=0.00时的306.7K,下降到x=0.02时的294.3K,紧接着又上升到x=0.04时的302.4K.测得居里温度明显高于La0.7Ca0.2Ba0.1Mn1-xMoxO3体系,而且其磁性也大为增强.由零场和外加磁场H=1T测量得到样品的ρ～T曲线表明随温度降低样品同时发生了从绝缘体到金属的转变,绝缘体-金属转变温度低于相应的居里温度.适量的Ru掺杂降低了样品的电阻率,增强了低温时的磁电阻.     

(La2/3Ca1/3)O3低温下的电阻极小值行为

对B位替代的Mn氧化物(La2/3Ca1/3)O3样品在温度远低于居里温度时的电阻率随温度的变化行为进行了研究.发现未加磁场时,样品在低温下表现出电阻率极小行为,这一极小现象在外加磁场后被大为抑制.作者对此实验现象作了定量的理论与实验的比较,并给出了有关可能的机理.     

Nd1.67Sr0.33NiO4中的热导反常

报道了两个典型掺杂的镍氧化物Nd＿2-xSr＿xNiO＿4(x =0.33,1.35)的低温热导率、电阻率和低场交流磁化率，测试温区为77—300K. 在Nd＿2-xSr＿xNiO＿4 (x=0.33)样品的热导率-温度曲线上在电荷有序转 变温度（T＿CO）和自旋有序转变温度（T＿SO）附近分别观测到反常， 电荷有序使热导率在T＿CO以下有所增加，反铁磁自旋有序使热导率在T＿SO附近被压制. 在低场交流磁化率-温度曲线上也分别观测到对电荷有序和自旋有 序的响应，而在其电阻率-温度曲线上仅观测到电荷有序. 作为比较，Nd＿1.67Sr0.33NiO＿4样品中没有观测到输运性质和磁性质上的反常. 两个样品中声子热导占 主导地位. Nd＿1.67Sr0.33NiO＿4样品中电荷有序和自旋有序导致的热导 率的反常表明样品中存在强的电荷-声子和自旋-声子相互作用. 关键词： 热导率 电荷有序 自旋有序     

Y替代La2/3Ca1/3MnO3体系的结构与输运行为

系统研究了(La1-xYx)2/3Ca1/3MnO3(0.0≤x≤0.3)体系的结构和输运行为.结果表明，实验样品具有很好的单相结构，随Y掺杂浓度的增加，金属—绝缘体（M—I）转变温度T-MI向低温区移动，对应的峰值电阻率ρp升高，对x=0.3样品，较未替代样品（x=0.0）增幅达8个数量级.在外加磁场下，材料表现出很强的磁电阻效应.同时，从实验结果出发，直接给出了输运特性与晶体结构之间的关联，并从双交换模型和可变程跃迁理论出发，对实验结果进行了初步讨论. 关键词： La2/3Ca1/3MnO3锰氧化物 Y替代 晶体结构 输运行为     

纳米多晶La0.7Sr0.3MnO3－δ的输运性质和磁电阻效应研究

利用溶胶-凝胶法制备了纳米多晶La_0.7Sr_0.3MnO_3-δ(LSM)块体样品.详细研究了在不同烧结温度下的LSM样品电阻率随测量温度的变化关系和磁电阻效应.随着测量温度从室温降低,电阻率ρ都在250K附近存在最大值,低于该温度后,样品表现为金属导电特性,随后在50K左右存在一极小值.即随着温度从50K左右降低到4.2K,ρ反而逐渐升高,表现为绝缘体性的导电特性.研究表明,在低温下(<50K),ρ随温度降低而升高的现象与隧穿效应的理论模型(lnρ∝T^1/2)符合得很好,表明这种现象是由于传导电子在通过邻近LSM晶粒间表面/界面层时的隧道效应所致.而在50—250K的温度范围内,其电阻率与T²成正比,表现为LSM本征的金属导电特性.因此这种低温下电阻率的极小值现象来源于隧穿效应和LSM晶粒本征的金属导电特性的相互竞争.本文还详细研究了相应的隧道磁电阻效应. 关键词： 0.7Sr_0.3MnO_3-δ')" href="#">多晶La_0.7Sr_0.3MnO_3-δ 隧道效应 隧道磁电阻效应     

金属玻璃(Cu1-xNix)33Zr67合金的低温电阻率

本文研究了金属玻璃(Cu_1-xNi_x)₃₃Zr₆₇合金的低温电阻输运特性。在较宽的温区(2—273K)测试了电阻率,测量结果符合Mooij判据。样品电阻率随温度的变化行为与双能级隧道模型符合较好。 关键词：     

Thermal conductivity of an alloy in relation to the observed cooling rate and glass-forming ability

The glass-forming ability (GFA) of an alloy in this case is the largest diameter of a rod which can be cast fully glassy. The present work shows that the thermal conductivity of a liquid alloy has a strong effect on GFA by influencing the cooling rate upon mould casting. The initial cooling rates (for the first 70–100?K of temperature decrease), obtained for Cu-, Zr- and Au-based bulk glass-forming alloys in the liquid state, are found to scale linearly with the thermal conductivities of the liquid base elements. However the low cooling rate found for Ni-based alloy suggests that the heat transfer at the melt–mould interface may also influence the cooling rate. The low thermal conductivity of Ni-based alloys and the correspondingly low cooling rate obtained compared to Cu-based counterparts explains their lower GFA. In the literature, many factors influencing the GFA of alloys have been discussed. To these factors, the present study adds the thermal conductivity of the molten alloy and the melt–mould heat-transfer coefficient. Moreover, the cooling rate depends on temperature and, thus, the critical cooling rate itself is not a suitable parameter for indicating GFA. The cooling can be better described by an appropriate fitting of the cooling curve to an exponential temperature decay function.     

Kinetic coefficients of the semiconducting phase of FeSi2 at low temperatures

The results of studying the kinetic coefficients of β-FeSi₂ in the temperature range 4.2–300 K are considered. The resistivity decreases upon heating in the entire temperature range under investigation. The temperature dependences of the resistivity and thermal conductivity exhibit a break at ～20 K. In the range of 4.2–20 K, the resistivity is a linear function of temperature. The thermo-emf increases rapidly upon cooling and attains values exceeding 15 mV/K. The temperature dependence of the thermo-emf exhibits a break at ～40 K. The observed set of temperature dependences of the kinetic coefficients apparently cannot be explained by a superposition of the known effects only. A new effect probably exists that is associated with a strong electron-phonon interaction in FeSi₂ and which requires a further investigation.     

Effect of mechanical activation on thermal and electrical conductivity of sintered Cu,Cr, and Cu/Cr composite powders

The results of measurement of electric resistivity and thermal conductivity of materials obtained by spark plasma sintering from powders of Cu, Cr, and their mixtures in the range of 300–600 K are presented. It is shown that the grinding of powders in planetary mills results in a reasonably substantial change in the electric and thermal properties of materials: to increasing electric resistivity and decreasing thermal conductivity and temperature coefficients of electric resistivity. The possible causes of these effects are considered.     

Impedance study of BIMGVOX ceramics

The polycrystalline samples of Bi₂V_0.9Mg_0.1O_5.35 were synthesised. The conductivity of the samples with Pt electrodes was determined by non-linear least-squares analysis of the impedance spectra. The total conductivity of the samples exhibits Arrhenius-type dependence on temperature with two straight line sections. In the transition from one linear section to the other a time dependence of conductivity was observed. The conductivity decreases both on heating and cooling during several hours at constant temperature (between 665 and 680K and between 710 and 695K on heating and cooling respectively). During heating at temperatures between 685 and 790K the Arrhenius plot are not linear. It may be expected that a process of slow ordering/disordering of oxygen vacancies is responsible for this phenomenon. The values of conductivity at low temperatures were dependent upon the length of time the sample was allowed to reach equilibrium - the structure of the material seems to be frozen in a metastable state, probably β type. At high temperature region the conductivity do not depend on the thermal history of sample. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

Ni-Co合金快淬过程的分子动力学模拟

采用分子动力学模拟熔体旋淬技术的合金快淬过程,在不同的冷却速度下研究Ni-Co合金在快淬后的结构特征.模拟发现:Ni-Co二元合金的凝固过程对冷却速率的变化较为敏感,体系对形成非晶对冷却速率要求较高,约在80 K/ps以上,可以采用增加添加元素的方法来降低材料对冷却速率的要求;在75 K/ps的冷却速率下合金最终完全晶...     

Single crystal growth,structural and transport properties of bad metal RhSb_2

We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62 × 10¹⁸ cm^-3 at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb_2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.     

Thermal conductivity of indium at high pressures and temperatures under shock compression

The results of investigations of the electrical and thermal conductivity of indium in the pressure range up to 27 GPa and at temperatures up to 1000 K are presented. In this pressure range, the electrical resistance of indium samples is measured under multishock compression. The equation of state constructed for indium is used to calculate the evolution of the thermodynamic parameters of indium in shock wave experiments; then, the dependences of the electrical resistivity and thermal conductivity coefficient on the volume and temperature are determined. It is demonstrated that, in the pressure and temperature ranges under investigation, the thermal conductivity coefficient of indium does not depend on temperature and its threefold increase is caused only by the change in the volume under compression.     

Thermal conductivity of polycrystalline zinc selenide

The thermal conductivity of optically transparent zinc selenide polycrystals fabricated by vapor deposition was experimentally studied in the temperature range 80–400 K in the as-deposited state and after deformation along the crystal growth direction followed by recrystallization. In the low-temperature range, textured ZnSe samples exhibit anisotropy of the thermal conductivity, which also persisted after their deformation and recrystallization. The anisotropy of the thermal conductivity is caused by phonon scattering by dislocations oriented along the crystal growth direction. The thermal conductivity of ZnSe at T>270 K is shown to be limited by the scattering of acoustic phonons by optical phonons.     

Temperature dependence of thermal and electrical conductivity of Bi-based high-Tc (2 2 2 3) superconductor

Superconducting samples with nominal composition Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_δ were prepared by the conventional solid-state reaction technique. The samples have been characterized by X-ray diffraction, dc electrical resistivity, ac magnetic susceptibility and thermal conductivity. The X-ray diffraction studies were done at room temperature and the lattice constants of the material were determined by indexing all the peaks. All the above measurements show that, there exists two phases i.e. high-T_c (2 2 2 3) and low-T_c (2 2 1 2). The information obtained from dc electrical resistivity data agrees with ac magnetic susceptibility measurements. The onset temperature T_c (onset) and zero resistivity temperature T_c (R = 0) of the samples remains within the temperature 120 ± 1 K and 103 ± 1 K. Thermal conductivity has been measured with a transient plane source (TPS) technique in the temperature range 77–300 K. The estimation of the electrical resistivity change due to scattering by phonons and impurities has been discussed. An increase in thermal conductivity is observed above and below T_c (R = 0). The electron–phonon scattering time, phonon-limited mobility and the size of the electron–phonon constant are also calculated. Wiedemann–Franz law is applied to gain prediction about the magnitude of electronic and phonon contribution to the total thermal conductivity of the samples. It is observed that heat is mainly conducted by the phonons in this system.