GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

电子束泵浦氧化锌基量子阱的斯塔克效应

在不同功率密度的电子束泵浦条件下,对ZnO/Zn0.85Mg0.15O非对称双量子阱的荧光光谱进行了研究,并采用蒙特卡罗仿真模拟对测试结果进行了分析。模拟的结果和实验结果高度吻合。观测到了不随穿透深度变化的阱区发光峰红移,证明表面电荷积累引起了量子限域斯塔克效应。     

氦原子基态的斯塔克效应

用微扰与变分相结合的方法计算了氦原子基态的斯塔克效应，通过计算发现这种方法简便直观，尤其适用于低激发态且电子数不太多的原子．     

PbS半导体超微粒子的量子尺寸效应和光学性质

本文研究了PbS半导体超微粒子的量子尺寸效应和光学性质以及它们周围介电环境对其光学性质的影响,发现表面修饰有效地减少粒子表面缺陷,增加它们的发光强度。利用紧束缚模型,讨论了实验结果。     

将21世纪诺奖实验引入大学物理实验教学——LED中的量子斯塔克效应

目前大学物理实验中所涉及的诺贝尔物理学奖实验多为20世纪的经典实验.百年经典诺奖的实用价值和教育意义已被实践验证.为了深入探索最新诺奖成果的教育价值,使大学生的实验教学与时俱进,与前沿研究接轨,本文将2014年的发光二极管(LED)诺奖实验引入大学物理实验.首先,使学生掌握可见光LED中的多量子阱结构及其发光机理.重点追踪中村修二获奖后对LED的更深入研究,通过对LED发光光谱随注入电流变化的研究,向学生直观展示LED中的量子限制斯塔克效应,并计算出量子阱中压电电场的强度.     

原子与单模场相互作用中克尔效应与斯塔克效应的统一处理

处理了包含克尔效应和斯塔克效应的原子与场相互作用模型。由于在其有效哈密顿中作了旋转波近似，两种效应的影响可以归结为对原子与场失谐的改变，这种失谐变化依赖于一个系统的守恒量。研究表明，克尔效应和斯塔克效应在一定条件下是等价的。研究了当场的初态为宏观可区分量子迭加态时，光子的反聚束效应。探讨了在广义的克尔介质中原子与场相互作用模型的求解。     

氢原子的二次斯塔克效应

在一次效应的基础上，本文以ｎ＝２能级为例，计算了氢原子的二次斯塔克效应．计算结果表明，考虑了二次效应以后，能量只相对于一次效应有一移动而并不继续发生分裂，从而很好地解释了氢原子赖曼线系第一条谱线在电场作用下分裂为三条的现象．     

氢原子斯塔克效应中微扰矩阵元的GUI求解

利用Matlab软件对氢原子斯塔克效应中的微扰矩阵元进行编程计算.直接输入n、l、m量子数,就可以立即得到计算结果.     

一维氢原子的斯塔克效应

用定态微扰理论计算了一维氢原子在均匀外电场中的斯塔克效应,并给出了一级、二级能级修正的普遍公式。     

GaN半导体中InN量子点的结构性质

采用第一性原理模拟计算纤锌矿结构GaN半导体中InN量子点的结构性质。建立64和128个原子的超原胞量子点模型,进行结构优化以获得稳定的吻合实际的系统,并模拟分析电子结构。从态密度空间分布图看到不同轴向的量子势阱形状各异、深度不一,说明量子点的限域效应存在着各向异性的特点。c轴极化方向引起量子点结构带边的弯曲形状与传统的量子阱结构不同,使得电子空穴没有发生空间分离,有利于电子空穴的跃迁几率的提高。     

Stark effect in a wedge-shaped quantum box

The effect of an external applied electric field on the electronic ground-state energy of a quantum box with a geometry defined by a wedge is studied by carrying out a variational calculation. This geometry could be used as an approximation for a tip of a cantilever of an atomic force microscope. We study theoretically the Stark effect as function of the parameters of the wedge: its diameter, angular aperture and thickness; as well as function of the intensity of the external electric field applied along the axis of the wedge in both directions; pushing the carrier towards the wider or the narrower parts. A confining electronic effect, which is sharper as the wedge dimensions are smaller, is clearly observed for the first case. Besides, the sign of the Stark shift changes when the angular aperture is changed from small angles to angles θ>π. For the opposite field, the electronic confinement for large diameters is very small and it is also observed that the Stark shift is almost independent with respect to the angular aperture.     

The optical Stark effect in semiconductor quantum wires

A new approach for controlling the optical emission wavelength of semiconductor quantum wires is proposed. The wavelength control resides upon the effect of an intense, long-wavelength laser field radiation applied to the semiconductor structure. Under such condition a strong optical Stark effect leads to optical tunability. Calculation of the optical Stark effect was carried out in the frame of the nonperturbative theory and finite difference method. Different geometries concerning the size of GaAs–AlGaAs quantum wires as well as the polarization direction and the strength of the applied laser field with respect to the quantum structure were considered.     

Influence of strain on the Stark effect in InP/GaInP quantum discs

In InP/GaInP quantum discs it is shown that strain induces a type I to type II transition with increasing thickness of the disc. When an external electric field is applied along the cylindrical axis of the disc, the exciton energy exhibits a Stark effect, which for the light hole exciton becomes linear even for a small field value, while for the heavy hole it is more quadratic.     

Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots

We have experimentally and theoretically investigated quantum confined Stark effect in hexagonal self-assembled GaN/AlN quantum dots. We have observed a blueshift of up to 100 meV for vertical electric field applied against the built-in electric field while we have observed a redshift for the electric field along the built-in field. The experimental result is compared with a charge self-consistent effective mass calculation, taking into account strain, piezoelectric charge, and pyroelectric charge. The tunability of the emission energy and the exciton binding energy is discussed.     

Stark effect on an exciton or impurity in a finite width quantum wire with an electric field confined in a finite region

We study the electronic properties of a quantum system formed by two charged particles moving in a quantum wire (QW) with finite width σ and interacting through a Coulomb potential under an uniform electric field E applied over a spatially confined region of thickness 2a (-a<z<a). The number of electronic states of this finite width system is twice the number of the less realistic system with σ=0.     

Theoretical study of quantum confined Stark shift in InAs／GaAs quantum dots

The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or “truncated pyramid” are calculated and analysed. We use a method based on the Green function technique for calculating thestrain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.     

Bound polaron in a spherical quantum dot under an electric field

A variational approach is used to study the ground state of a bound polaron in a spherical quantum dot under an external electric field. The binding energy of the hydrogenic impurity state is calculated by taking the interaction of an electron with both the confined longitudinal optical phonons and the surface optical phonons into account. The interaction between impurity and longitudinal optical phonons has also been considered to obtain the binding energy of a bound polaron. It shows that the polaron effects give significant corrections to the binding energy and its Stark energy shift. The external electric field increases the phonon contributions to the binding energy.     

Correlation energies of many-body complexes in biased InAs/GaAs quantum dots

The aim of this work is to analyze theoretically the correlation energies for neutral, positively, negatively charged exciton and bi-exciton. So, we propose a model consistent with experimental observations that is small InAs truncated pyramids with circular base lying on wetting layer, both buried into GaAs matrix.In a first step and in contrast to other works, we are able to evaluate coulombic interactions between electron and hole, two electrons and two holes by perturbative method at the second order. In a second step, the correlation energies of many-body complexes X, X^-, X⁺ and XX are investigated as a function of quantum dots basis radius r_c and the applied electric field.Our main goal is to provide realistic estimation for the correlation energies of excitons, charged excitons and bi-excitons while retaining at the same time a transparent formalism, which could easily be transposed to structures of actual interest.The present work provides evidence of the stability of excitons, charged excitons and bi-excitons in InAs/GaAs quantum dots. Calculated correlation energies of many-body complexes are consistent with those reported by recent photoluminescence measurements.     

Stark effect of negatively and positively charged excitons in semiconductor quantum wells

We study the effect of an electric field applied normal to the layers on the binding energy of charged excitons (or trions) in GaAs quantum wells. We find that, in contrast to the neutral exciton, their binding energy is sharply reduced by modest electric fields. The effect is stronger for the positively charged exciton than the negatively charged one. The ionisation of the excess carrier is explained by the field-induced polarisation of the electron and hole subband wave functions.