A finite fractal cluster theory of 1/f noise in percolation systems near metal-insulator transition

The problem of 1/f noise in thin metal films and metal-insulator composites in the scaling fractal regime near percolation threshold is considered. The correspondence between a percolation transition and a second order phase transition is extended from the point of view of electronic polarization and electrical fluctuations. The charge fluctuations on finite fractal clusters are argued to be analogous to spontaneous order parameter fluctuations in phase transitions, being correlated upto percolation correlation length. The charge relaxation times are shown to be related to the cluster sizes having distribution function of the formg()^–b , whereb is connected to Euclidean and fractal dimensionalities and critical exponents. This produces the 1/f noise spectrum. Below percolation threshold, the nodes-links-blobs picture is invoked such that the blobs represent metallic conductances of the finite clusters and the links are tunnelling conductances between them through narrowest barrier regions. Above threshold, the finite cluster network is visualized as connected to the infinite cluster through narrowest tunnelling regions. The correlated spontaneous charge fluctuation on finite fractal clusters is held responsible for conductance fluctuation on either side of the metal-insulator transition via tunnelling processes. Finally, the scaling behaviour of noise magnitude near percolation threshold is explained.     

1/f noise in varistors

An experimental investigation was made of low-frequency fluctuations of the open-circuit voltage of mass-produced Varistors made of silicon carbide. It was concluded that the main charge transport mechanism in varistors may be the Frenkel ionization of impurities.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 11–15, November, 1980.     

A theory of 1/f noise

Letu() be an absolutely integrable function and define the random process where thet _i are Poisson arrivals and thes _i, are identically distributed nonnegative random variables. Under routine independence assumptions, one may then calculate a formula for the spectrum ofn(t), S _n(), in terms of the probability density ofs, p_s(). If any probability density p_s() having the property p_s() I for small is substituted into this formula, the calculated S_n() is such that S_n() 1 for small . However, this is not a spectrum of a well-defined random process; here, it is termed alimit spectrum. If a probability density having the property p_s() for small , where > 0, is substituted into the formula instead, a spectrum is calculated which is indeed the spectrum of a well-defined random process. Also, if the latter p_s is suitably close to the former p_s, then the spectrum in the second case approximates, to an arbitrary, degree of accuracy, the limit spectrum. It is shown how one may thereby have 1/f noise with low-frequency turnover, and also strict 1/f ^1– noise (the latter spectrum being integrable for > 0). Suitable examples are given. Actually, u() may be itself a random process, and the theory is developed on this basis.     

The so-called 1/Δ f noise

A sinusoidal ac current of frequeencyf _c generates an excess noise in many solidstate conductors. The power spectrum of this noise is calculated starting from the autocorrelation function of the stochastic process. Besides a 1/Δf term the spectrum includes another contribution varying with 1/(f _c+f). In the low frequency range there is white noise.     

Quantum chaos and 1/f noise

It is shown that the energy spectrum fluctuations of quantum systems can be formally considered as a discrete time series. The power spectrum behavior of such a signal for different systems suggests the following conjecture: The energy spectra of chaotic quantum systems are characterized by 1/f noise.     

金属薄膜电迁移1/f噪声与1/f2噪声统一模型

应用晶粒边界自由体积的概念建立了能够统一描述金属薄膜1f噪声与1f2噪声的模型.该模型表明,结构完整的多晶金属薄膜产生的电噪声为1f噪声,当金属薄膜受到电迁移损伤而形成空洞时就会引入1f2噪声的成分.在电迁移应力实验中,观察到金属薄膜1fγ噪声在空洞成核前γ约为10,一旦发生空洞成核,即突增至16以上,这一规律与本模型的预测相符合 关键词： 金属薄膜 1fγ噪声 电迁移 自由体积     

1/f noise at a critical nonequilibrium phase transition

The generation of 1/f noise is demonstrated experimentally in a system consisting of a superconducting film carrying a transport current in contact with a boiling liquid coolant. It is found that wide-band 1/f noise with a large amplitude of the fluctuations is observed over a wide range of parameters. This noise is attributed to the fact that the sub-systems in contact have the same character of the relaxational dependences δT(t)∼ t ^−1/2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 9, 739–742 (10 May 1996)     

Decoherence and 1/f noise in Josephson qubits

We propose and study a model of dephasing due to an environment of bistable fluctuators. We apply our analysis to the decoherence of Josephson qubits, induced by background charges present in the substrate, which are also responsible for the 1/f noise. The discrete nature of the environment leads to a number of new features which are mostly pronounced for slowly moving charges. Far away from the degeneracy this model for the dephasing is solved exactly.     

The 1/f noise in multiwalled carbon nanotubes

The $1/f$ noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples.     

1/f Flux noise in Josephson phase qubits

We present a new method to measure 1/f noise in Josephson quantum bits (qubits) that yields low-frequency spectra below 1 Hz. A comparison of the noise taken at positive and negative bias of a phase qubit shows the dominant noise source to be flux noise and not junction critical-current noise, with a magnitude similar to that measured previously in other systems. Theoretical calculations show that the level of flux noise is not compatible with the standard model of noise from two-level state defects in the surface oxides of the films.     

Relaxation and 1/f noise in phonon systems

This paper examines the relationships that exist between low-frequency fluctuations of the rate of dissipation in nonequilibrium thermodynamic systems and higher-order multitime statistical moments of equilibrium noise. In particular, it studies the relationships between internal friction fluctuations in the phonon system being excited and low-frequency fluctuations of Raman scattering of light in an equilibrium phonon system. We show that both processes are related to strong fluctuations in the phase diffusion rate and the relaxation of phonon modes generated, in turn, by the exponential instability of the dynamical paths of the system. Zh. éksp. Teor. Fiz. 111, 2086–2098 (June 1997)     

1/f noise and slow relaxations in glasses

Recently we have shown that slow relaxations in the electron glass system can be understood in terms of the spectrum of a matrix describing the relaxation of the system close to a metastable state. The model focused on the electron glass system, but its generality was demonstrated on various other examples. Here, we study the noise spectrum in the same framework. We obtain a remarkable relation between the spectrum of relaxation rates λ described by the distribution function P (λ) ～ 1/λ and the 1/f noise in the fluctuating occupancies of the localized electronic sites. This noise can be observed using local capacitance measurements. We confirm our analytic results using numerics, and also show how the Onsager symmetry is fulfilled in the system.