Tunneling of Dirac fermions in graphene through a velocity barrier with modulated by magnetic fields

We study magnetic field modulated transport properties of Dirac fermions in graphene, where Dirac fermions penetrate through a velocity barrier. We find strong wave vector filtering and resonant effect. The angular-dependent region of resonant tunneling is suppressed by tuning velocity barriers. We can also found that the confined states in this velocity barrier can be changed by the magnetic field. Various novel devices, such as wavevector filter and magnetic switches, may be constructed based on our observed phenomena.     

Eigen spectra and wave functions of the massless Dirac fermions under the nonuniform magnetic fields in graphene

In this research, firstly, by using the new form of Dirac-Weyl equation and the series method with submitting more suitable details, the energy spectrum and wave functions of the massless Dirac fermions are calculated under the inhomogeneous and q-deformed spatially magnetic fields. Although, we discussed about the results of the energy levels, further, we obtained the wave function as the Hessenberg determinant with calculating the elements of it as exact. On the other hand, by using the Mellin-Barnes integral representation and Hurwitz zeta function, we have achieved the thermodynamic physical quantities of the Dirac-Weyl fermions in the absence of a magnetic field for inside of the graphene quantum dot. Finally, our numerical results for the wave functions and probability densities are presented too.     

Tunneling of Dirac fermions through magnetic barriers in graphene

We have studied the tunneling of Dirac fermions through magnetic barriers in graphene. Magnetic barriers are produced via delta function-like inhomogeneous magnetic fields in which Dirac fermions in graphene experience the tunneling barrier in the real sense in contrast to Klein paradox caused by electrostatic barriers. The transmission through the magnetic barriers as functions of incident energy and angle of incoming fermions shows characteristic oscillations associated with tunneling resonances. We have also found the confined states in the magnetic barrier region which turn out to correspond to the total internal reflection in the usual optics.     

Transport properties of Dirac electrons in graphene based double velocity-barrier structures in electric and magnetic fields

Using transfer matrix method, transport properties in graphene based double velocity-barrier structures under magnetic and electric fields are numerically studied. It is found that velocity barriers for the velocity ratio (the Fermi velocity inside the barrier to that outside the barrier) less than one (or for the velocity ratio greater than one) have properties similar to electrostatic wells (or barriers). The velocity barriers for the velocity ratio greater than one significantly enlarge the resonant tunneling region of electrostatic barriers. In the presence of magnetic field, the plateau width of the Fano factor with a Poissonian value shortens (or broadens) for the case of the velocity ratio less than one (or greater than one). When the Fermi energy is equal to the electrostatic barrier height, for different values of the velocity ratio, both the conductivities and the Fano factors remain fixed.     

Qualitative analysis of trapped Dirac fermions in graphene

We study the confinement of Dirac fermions in graphene and in carbon nanotubes by an external magnetic field, mechanical deformations or inhomogeneities in the substrate. By applying variational principles to the square of the Dirac operator, we obtain sufficient and necessary conditions for confinement of the quasi-particles. The rigorous theoretical results are illustrated on the realistic examples of the three classes of traps.     

Fano resonance in graphene anti-dot and periodic graphene anti-dot arrays

We study the electron transport properties of graphene anti-dot and periodic graphene anti-dot arrays using the nonequilibrium Green?s function method and Landauer–Büttiker formula. Fano resonant peaks are observed in the vicinity of Fermi energy, because discrete states coexist with continuum energy states. These peaks move closer to Fermi energy with increasing the width of anti-dots, but move away from the Fermi energy with increasing the length of anti-dots. When N periodic anti-dots exist in the longitude direction, a rapid fluctuation appears in the conductance with varying resonance peaks, which is mainly from the local resonances created by quasibound state. When P periodic anti-dots exist in the transverse direction, P-fold resonant splitting peaks are observed around the Fermi energy, owing to the symmetric and antisymmetric superposition of quasibound states.     

Wave packets in graphene under external fields: Vortices formation

In this work we analyzed the time propagation of wave packets on a sheet of graphene under the action of external magnetic and electric fields in the Hall configuration. The treatment given in this work to the problem of particle propagation in graphene is based on the tight-binding model, not requiring to consider the linear approximation of the band structure around point K in the Brillouin zone. So, our calculation is able to describe the behavior of the particle in more general cases, not only the case of low lying excited states, the so-called massless Dirac electrons. Evaluating the time evolution of the wave function we assume as an initial state a Gaussian with a given velocity. We have considered the symmetric gauge for the vector potential. For specific cases one is able to show a very interesting effect such as the apparition of vortices, i.e., the initial wave is split into components each one of these forming vortices that remain stationaries as time goes. Moreover, for a packet with a wave vector near point K in the Brillouin zone, one is able to show the presence of the effect of zitterbewegung, that is, a trembling motion of the centroid of the wave packet. The inclusion of a dc electric field in the plane of the graphene lattice displaces the vortices in a direction perpendicular to the field.     

Electronic transport on graphene armchair-edge nanoribbons with Fermi velocity and potential barriers

The transport properties of Dirac fermions through armchair-edge graphene nanoribbons (AGNRs) with a single and double rectangular Fermi velocity $v_F$ and electrostatic potential U barriers is investigated. We employ a transfer matrix method (TMM) to compute the transmission coefficient of the full set of propagating mode which is used to obtain the conductance and Fano factor spectra for both metallic and semiconducting nanoribbons. We show that a reduced Fermi velocity within the barrier region can partially suppress the backscattering resulting from the electrostatic potential. In a double barrier structure, the emergence of high-order transmitting modes is shown to substantially reduce the Fano factor in the spectral region around U. These results indicate that the simultaneous tuning of $v_F$ and U in barrier regions can be explored to control the electronic transport in graphene-based nanoelectronics structures.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

Thermoelectric properties of gated graphene ribbons in the ballistic regime

We investigate the thermoelectric properties of gated graphene ribbons in the ballistic transport limit using linear response theory and the Landauer formalism. The dependence of the electronic conductance, thermopower as well as electronic thermal conductance on both Fermi level and temperature are clarified and the validity of Wiedemann-Franz law is examined. The electronic part of thermoelectric figure of merit _ZTel${\mathit{ZT}}_{\mathit{el}}$ which gives an upper bound for the thermoelectric efficiency of the gated ribbons, is also calculated. It is shown that _ZTel${\mathit{ZT}}_{\mathit{el}}$ of wide and short gated ribbons is directly related to geometric aspect ratio of the graphene ribbon and for very short ribbons can exceed unity at room temperature. Our results could be useful in the design of efficient graphene-based thermoelectric devices.     

Voltage-driven electronic transport and shot noise in armchair graphene nanoribbons

We study theoretically shot noise and minimal conductivity of electrons by evanescent states penetrating through clean graphene nanoribbons (GNRs). With increasing of the barrier voltage, we find that the minimum conductivity will increase to 4e²/πh and the maximum Fano factor will increase to 1/3. More interestingly, quantum oscillations can be tuned by the gate voltage and separated by tuning the barrier voltage     

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

A pathway to open the band gap of graphene by p-n codoping is presented according to the first principles study. Two models are used: Lithium adsorbed on Boron-doped graphene (BG) and Boron-Nitrogen (B/N) codoping into graphene. The stability of Lithium adsorbed on BG is firstly analyzed, showing that the hollow site is the most stable configuration, and there is no energy barrier from some metastable configurations to a stable one. After the p-n codoping, the electronic structures of graphene are modulated to open a band gap with width from 0.0 eV to 0.49 eV, depending on the codoping configurations. The intrinsic physical mechanism responsible for the gap opening is the combination of the Boron atom acting as hole doping and Nitrogen (Lithium) as electron doping.     

Transport properties in a line defect superlattice of graphene

It was recently reported that a kind of graphene line defect can be fabricated in a controllable experimental way. In the present work we theoretically investigate the band structure and the electronic transport properties of a graphene superlattice formed by embedding periodically line defects in the graphene lattice. Based on the calculated results, we suggest that such a superlattice can be used as a quantum wire array which can carry much larger current than a single graphene nanoribbon. A remarkable advantage of this superlattice over other quantum wires is that the electronic transport in it is insensitive to scattering effects except that the scattering potential range is smaller than the graphene lattice constant. Moreover, we find that the anisotropy of the Dirac cone presented in this superlattice has a nontrivial influence on the universal minimal conductivity and the sub-Poissonian shot noise of graphene.     

Landau levels in deformed bilayer graphene at low magnetic fields

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ν=±4 being the most stable in the quantum Hall effect measurement, instead of ν=±8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ν=±4 is, down to very low fields, weakly dependent on the strength of the magnetic field.     

Coulomb impurity problem of graphene in magnetic fields

Analytical solutions to the Coulomb impurity problem of graphene in the absence of a magnetic field show that when the dimensionless strength of the Coulomb potential g$g$ reaches a critical value the solutions become supercritical with imaginary eigenenergies. Application of a magnetic field is a singular perturbation, and no analytical solutions are known except at a denumerably infinite set of magnetic fields. We find solutions to this problem by numerical diagonalization of the large Hamiltonian matrices. Solutions are qualitatively different from those of zero magnetic field. All energies are discrete and no complex energies are allowed. We have computed the finite-size scaling function of the probability density containing an s$s$-wave component of the Dirac wavefunctions. This function depends on the coupling constant, regularization parameter, and the gap. In the limit of vanishing regularization parameter our findings are consistent with the expected values of the exponent ν$\nu$ which determines the asymptotic behavior of the wavefunction near r=0$r=0$.     

Rippling and the external electric field on conductance in corrugated graphene nanoribbons molecular device

Molecular devices constructed using corrugated graphene nanoribbons (GNRs) are proposed in the paper. Recursive Green's function calculations show that the intrinsic ripples in graphene and the external electric field energy play important roles on the electron transport properties. Negative differential resistance is observed in zigzag corrugated GNRs. With the wavelength of the ripples decreasing, both the zigzag and armchair corrugated GNRs exhibit ON/OFF characteristics. On applying external electric field, current decreases dramatically in zigzag corrugated GNRs. These findings show that corrugated GNRs can be used to design functional nanoscale devices.     

Nonlinearity of the zigzag graphene nanoribbons with antidots via the f-deformed Dirac oscillator in (2+1)-dimensions

We study the nonlinearity for the zigzag graphene nanoribbons (ZGNRs) with zigzag triangular holes (ZTHs). We show that in the presence of an external uniform magnetic field, a two-dimensional f-deformed Dirac oscillator can be used to describe the dynamics of the electrons in the ZGNRs with ZTHs. It is shown for the first time that the magnetic field direction has effect on the chirality of charge carriers in the ZGNRs punched with triangular holes. We also obtain the Landau-level spectrum in the weak and strong magnetic field regimes. Additionally, we compare Landau-level spectrum of this graphene-based device in the f-deformed scenario and original one. Our results provide a general viewpoint for the development of the zigzag graphene nanoribbons.