Theoretical analysis and experimental research on thermal focal length of a YVO4/Nd:YVO4 composite crystal

This paper investigates the temperature field distribution and thermal focal length within a laser diode array (LDA) end-pumped YVO4/Nd:YVO4 rectangular composite crystal. A general expression of the temperature field distribution within the Nd:YVO4 rectangular crystal was obtained by analysing the characteristics of the Nd:YVO4 crystal and solving the Poisson equation with boundary conditions. The temperature field distributions in the Nd:YVO4 rectangular crystal for the YVO4/Nd:YVO4 composite crystal and the Nd:YVO4 single crystal are researched respec- tively. Calculating the thermal focal length within the Nd:YVO4 rectangular crystal was done by an analysis of the additional optical path differences (OPD) caused by heat, which was very identical with experimental results in this paper. Research results show that the maximum relative temperature on the rear face of the Nd:YVO4 crystal in the composite crystal is 150 K and the thermal focal length is 35.7 mm when the output power of the LDA is 22 W. In the same circumstances, the experimental value of the thermal focal length is 37.4 mm. So the relative error between the theoretical analysis and the experimental result is only 4.5%. With the same conditions, the thermal focal length of the Nd:YVO4 single crystal is 18.5 mm. So the relative rate of the thermal focal length between the YVO4/Nd:YVO4 crystal and the Nd:YVO4 crystal is 93%. So, the thermal stability of the output power and the beam quality of the YVO4/Nd:YVO4 laser is more advantageous than the laser with Nd:YVO4 single crystal.     

Optical properties and laser performance of neodymium doped scheelites CaWO4 and NaGd(WO4)2

Nd-doped CaWO₄ (CWO) and NaGd(WO₄)₂ (NGWO) single crystals with good optical quality have been grown by the Czochralski technique. The neodymium distribution coefficient in these matrices is about 0.4 for CWO and close to unity for NGWO. Polarized absorption and emission spectra have been recorded at room temperature and used to calculate the absorption and stimulated emission cross-sections.1 and 2% Nd : CWO and 1 % Nd:NGWO laser rods have been tested in a cavity longitudinaly pumped by an 1 W AIGaAs laser diode and compared to Nd : YAG and Nd:YVO₄ rods in the same conditions. The 2% Nd: CWO rod exhibits the best performance with slope efficiencies of 64%, higher than in the case of YAG and equal to the YVO₄ samples. The dependence of the laser output power versus the diode temperature has been measured for all these materials. The laser output of Nd: CWO was found to be nearly as stable as for Nd : YVO₄ and much more stable than in the case of Nd : YAG. A CWO microchip has also been tested for the first time to our knowledge.     

Single-longitudinal mode Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript>/KTP green solid state laser

We present the concept and practical realization of a single frequency, tuneable diode pumped Nd:YVO₄/YVO₄/KTP microchip laser operating at 532 nm. Theoretical analysis of the single mode operation of such a laser configuration is presented. The single frequency operation has been obtained in a birefringent filter, where an YVO₄ beam displacer acts as an ideal polarizer. Experimental results are in good agreement with theoretical analysis. We have obtained stable single frequency operation, tuneable over 0.6 nm in the spectral range around 1064 nm. The laser operated with output power up to 110 mW at 53 nm. The total optical efficiency (808 nm to 532 nm) was 14%.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Comparison between c-cut and a-cut Nd:YVO4 lasers passively Q-switched with a Cr4+:YAG saturable absorber

Comparison between c-cut and a-cut Nd:YVO₄ microchip lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO₄ crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO₄ crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (>10 kW) lasers. Received:10December2001/Revisedversion:22January2002 / Published online: 14 March 2002     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

A high-energy, chirped laser system for optical Stark deceleration

We describe a high-energy, frequency chirped laser system designed for optical Stark deceleration of cold molecules. This system produces two, pulse amplified beams of up to 700 mJ with flat-top temporal profiles, whose frequency and intensity can be well controlled for durations from 20 ns–10 μs. The two beams are created by amplifying a single, rapidly tunable Nd:YVO₄ microchip type laser at 1064 nm, which can be frequency chirped by up to 1 GHz over the duration of the pulse. Intensity modulation induced by relaxation oscillations in the microchip laser during the frequency chirp are virtually eliminated by injection locking a free running semiconductor diode laser before pulsed amplification.     

Low-threshold miniature Ce:LiCAF lasers

We present a miniature Ce:LiCAF laser with extremely low threshold used as a tunable wavelength converter for an inexpensive Nd:YVO₄ microchip laser. Untuned, the laser operates with a threshold of 200 nJ and an absolute efficiency of 31%. Using an intra-cavity prism, continuous tuning from 283 to 314 nm is observed. These sources are well suited for applications in biological and chemical detection.     

Intensity noise of injected Nd:YVO 4 microchip lasers

The combined effects of the pump noise suppression and injection locking technique on the intensity noise of a diode pumped Nd:YVO₄ microchip laser are theoretically and experimentally investigated. Complete cancellation of the relaxation oscillation peak is experimentally achieved. Very good agreement between experimental results and theoretical predictions of a fully quantum model describing lasers with injected signal is found. Received 10 December 2001 and Received in final form 6 March 2002     

Single-longitudinal mode, monolithic, green solid-state laser

We present the practical realization of a monolithic single-frequency diode pumped Nd:YVO₄/YVO₄/KTP microchip laser with birefringent filter operating at 532?nm. Theoretical analysis of the single-mode operation of such a laser configuration is presented. Experimental results are in good agreement with theoretical analysis. The laser operated with output power up to 90?mW at 532?nm. The total optical efficiency (808?nm to 532?nm) was 9.5%. Power stability was at the level of ±0.75% and the long-term frequency stability was approximately 3×10^?8. The beam has a Gaussian profile and the M2 parameter was below 1.2.     

An Intracavity-Triggered Passively-Switched Nd:YVO<Subscript>4</Subscript> Laser

We demonstrate an intracavity-triggered passively Q-switched Nd:YVO₄ laser within a diode-end-pumped configuration. We employ a Cr⁴⁺:YAG saturable absorber as the passive Q switch and an Nd:LiYF₄ (YLF) laser as the laser triggering of the Q-switched laser. Since we use the same Cr⁴⁺:YAG crystal and output coupler with the Nd:YVO₄ laser, the Cr⁴⁺:YAG Q switch is triggered inside the Nd:YLF laser cavity. As a result, the timing jitter in standard deviation of Nd:YVO₄ laser can be reduced to 16 ns.     

Influence of the laser-diode temperature on crystal absorption and output power in an end-pumped Nd:YVO<Subscript>4</Subscript> laser

In this work, we studied the influence of heat loaded into the laser crystal in an end-pumped solid-state Nd:YVO₄ high power laser. We have shown experimentally that the optimum value of the laser-diode temperature for the maximum pump power absorption by the Nd:YVO₄ crystal and the maximum Nd:YVO₄ laser output power are approximately similar to that of a system of the low power type, but by increasing the pump power, different values can be obtained.     

Simultaneous dual-wavelength laser operation at 1342 and 946 nm in two laser crystals and their sum-frequency mixing

A sum-frequency yellow-green laser at 554.9 nm is reported by this paper, 946 nm wavelength is obtained from ⁴F_3/2-⁴I_9/2 transition in Nd:YAG and 1342 nm wavelength is obtained from ⁴F_3/2-⁴I_13/2 transition in Nd:YVO₄. Using a doubly folded-cavity type-II critical phase matching KTP crystal intra cavity to make 946 nm laser from Nd:YAG and 1342 nm laser from Nd:YVO₄ frequency summed, with incident pumped power of 30 W in Nd:YAG and 20 W in Nd:YVO₄, TEM₀₀ mode yellow-green laser at 554.9 nm at 1.15 W is obtained and its M² factor is less than 1.22. The experimental results show that the Nd:YAG and Nd:YVO₄ crystals intra-cavity sum-frequency mixing is an effective method for yellow-green laser and it can be applied to other two laser crystals to obtain more all-solid-state lasers with different wavelengths.     

Laser performance of grown-together YVO4/Nd:YVO4 composite crystal at continuous-wave 914 nm

We demonstrated a diode-end-pumped continuous-wave 914 nm laser using a novel grown-together YVO₄/Nd:YVO₄ crystal for the first time. A maximum output power at 914 nm of 7.5 W with an optical-optical efficiency of 16.3% and a slope efficiency of 24.3% was obtained when the incident pump power was 46.2 W. The beam quality factor M ² was 3.2 at the output power of 6.0 W. The quality and specification of the grown-together composite YVO₄/Nd:YVO₄ crystal should be improved. Meanwhile, energy-transfer upconversion spectrum of the composite YVO₄/Nd:YVO₄ crystal laser was also investigated.     

Scaling Q-switched microchip lasers for shortest pulses

We evaluate the design of Q-switched microchip lasers to examine the limit of their scaling to shorter picosecond pulses. A numerical model based on the laser rate equations is developed and used to predict the output characteristics of prospective laser designs. Based on the modeled results, we employ a SESAM as a passive Q-switch and thin crystals of Nd:YVO₄ as a gain medium to experimentally demonstrate the production of pulses as short as 22?ps.     

Phase synchronization in a two-mode solid state laser: Periodic modulations with the second relaxation oscillation frequency of the laser output

Phase synchronization (PS) in a periodically pump-modulated two-mode solid state laser is investigated. Although PS in the laser system has been demonstrated in response to a periodic modulation with the main relaxation oscillation (RO) frequency of the free-running laser, little is known about the case of modulation with minor RO frequencies. In this Letter, the empirical mode decomposition (EMD) method is utilized to decompose the laser time series into a set of orthogonal modes and to examine the intrinsic PS near the frequency of the second RO. The degree of PS is quantified by means of a histogram of phase differences and the analysis of Shannon entropy.     

Diode-pumped Nd:LuVO<Subscript>4</Subscript>-Nd:YVO<Subscript>4</Subscript> laser at 492 nm with intracavity sum-frequency-mixing in LiB<Subscript>3</Subscript>O<Subscript>6</Subscript>

We present for the first time a Nd:YVO₄ laser emitting at 1064 nm intracavity pumped by a 916 nm diode-pumped Nd:LuVO₄ laser. A 809 nm laser diode is used to pump the Nd:LuVO₄ crystal emitting at 916 nm, a Nd:YVO₄ laser crystal was pumped at 916 nm and lased at 1064 nm. Intracavity sum-frequency mixing at 916 and 1064 nm was then realized in a LiB₃O₆ (LBO) crystal to reach the blue range. We obtained a continuous-wave output power of 216 mW at 492 nm under 19.6 W of incident pump power at 809 nm.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

端面泵浦双Nd: YVO4激光器中热效应对腔稳定性的影响

利用多个激光晶体串接方式可以提高固体激光器的输出功率. 发展双Nd: YVO₄晶体激光器, 将晶体的端面镀膜作为谐振腔的端面镜, 构成了平行平面谐振腔. 对平行平面谐振腔的等效腔进行了理论分析, 结果表明激光晶体吸收泵浦光产生的热透镜效应对保持腔的稳定性起到了重要的作用. 在国内首次进行了双端泵浦双Nd: YVO₄激光器的实验研究, 在抽运功率为 20.74 W时获得了11 W的1064 nm TEM00模激光输出, 其光-光转化效率约为53%. 并且对于不同掺杂浓度下的实验结果进行了讨论.